• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 추계학술대회 논문집 학회본부 C
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• pp.568-569
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• 2000

By manufacturing 8" class $146{\times}96mm$ "flat fluorescent lamp" of new form that uses xenon gas, an electric optical characteristic has been analyzed. Lamp shows that the lamp surface brightness is 4900 cd/m2 and the birghtness uniformity degree is 90% under sine wave of 15khz and applied voltage of 1,000 Vrms.

• Journal of Electrochemical Science and Technology
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• 제10권4호
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• pp.408-415
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• 2019

Electroplating is a widely used surface treatment method in the manufacturing process of electronic parts and uniformity of the electrodeposition thickness is very crucial for these applications. Since many variables including fluid flow influence the uniformity of the film, it is difficult to conduct efficient research only by experiments. So many studies using simulation have been carried out. However, the most popular simulation technique, which calculates secondary current distribution, has a limitation on the considering the effects of fluid flow on the deposition behavior. And modified method, which is calculating a tertiary current distribution, is limited to a two-dimensional study of simple shapes because of the massive computational load. In the present study, we propose a new electroplating simulation method that can be applied to complex shapes considering the effect of flow. This new model calculates the electroplating process with three steps. First, the thickness of boundary layers on the surface of the cathode plane and velocity magnitudes at the positions are calculated from the simulation of fluid flow. Next, polarization curves of different velocities are obtained by calculations or experiments. Finally, both results are incorporated into the electroplating simulation program as boundary conditions at the cathode plane. The results of the model showed good agreements with the experimental results, and the effects of fluid flow of electrolytes on the uniformity of deposition thickness was quantitatively predicted.

• 한국정밀공학회지
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• 제19권8호
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• pp.92-99
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• 2002

This work investigated the optimal condition for an uniform deposition growth rate in the vertical cylindric CVD chamber. Heat transfer, surface chemical reaction and mass diffusion in the flow field of CVD chamber h,id been computed using Fluent v5.3 code. A SIMPLE based finite Volume Method (FVM) was adopted to solve the fully elliptic equations for momentum, temperature and concentration of a chemical species. The numerical analysis results show good agreements with the measurements obtained by N. Yoshikawa. The results obtained by the numerical analysis showed that the film growth rate in the center of a susceptor is increasing, as the inner flow approaches to the forced convection. To the contrast, as it approaches to the natural convection, that in the outside of a susceptor is increasing. As the Reynolds number increases, the uniformity may not hold due to the larger temperature gradient at a susceptor surface. Therefore, when the temperature gradient on the surface of a susceptor is zero, the film growth rate becomes uniform on most surface.

• 대한기계학회논문집B
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• 제30권7호
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• pp.663-670
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• 2006

The presented study aims to investigate the colloidal droplet deposition caused by evaporation of the liquid. In the numerical analysis, the evaporation is carried out by using different evaporation function intended to obtain different shape of solute deposition. In the experiment, the colloidal droplets of different solvents are placed on a glass plate and the surface profiles are measured after drying the solvents of the droplets to investigate the effect of the solvent evaporation on the final deposition profile. Comparing the surface profiles obtained under different conditions, the optimum drying conditions of colloidal droplets are, determined to obtain uniform surface profiles. The numerical results showed that ring-shaped deposition of solute was formed at the edge of the droplet due to the coffee stain effect and the height of the ring was reduced at the lower evaporation rate. The experiments showed that the boiling point of a solvent was critical to the surface uniformity of the deposition profile and the mixture of solvents with different boiling points influenced the uniformity as well.

• 반도체디스플레이기술학회지
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• 제12권4호
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• pp.39-44
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• 2013

In the semiconductor heat-treatment process, the temperature uniformity determines the film quality of a wafer. This film quality effects on the overall yield rate. The heat transfer of the wafer surface in the heat-treatment process equipment is occurred by convection and radiation complexly. Because of this, there is the nonlinearity between the wafer temperature and reactor. Therefore, the accurate prediction of temperature on the wafer surface is difficult without the direct measurement. The thermal camera and the T/C wafer are general ways to confirm the temperature uniformity on the heat-treatment process. As above ways have limit to measure the temperature in the precise domain under the micro-scale. In this study, we developed the thin film type temperature sensor using the MEMS technology to establish the system which can measure the temperature under the micro-scale. We combined the experiment and numerical analysis to verify and calibrate the system. Finally, we measured the temperature on the wafer surface on the semiconductor process using the developed system, and confirmed the temperature variation by comparison with the commercial T/C wafer.

• 한국재료학회지
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• 제18권5호
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• pp.277-282
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• 2008

The effects of the field emission property in relation to the surface morphology and adhesion force were investigated. The single-wall-nanotube-based cathode was obtained by use of an in-situ arc discharge synthesis method, a screen-printing method and a spray method. The morphologies of the formed emitter layers were very different. The emission stability and uniformity were dramatically improved by employing an in-situ arc discharge synthesis method. In this study, it was confirmed that the current stability and uniformity of the field emission of the cathode depend on the surface morphology and adhesion force of the emitters. The current stability of the field emission device was also studied through an electrical aging process by varying the current and electric field.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.1296-1301
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• 2003

The chemical mechanical polishing(CMP) is necessarily applied to manufacturing the dielectric layer and metal line in the semiconductor device. The conditioning of polishing pad in CMP process additionally operates for maintaining the removal rate, within wafer non-uniformity, and wafer to wafer non-uniformity. But the fixed abrasive pad(FAP) using the hydrophilic polymer with abrasive that has the swelling characteristic by water owns the self-conditioning advantage as compared with the general CMP. FAP also takes advantage of planarity, resulting from decreasing pattern selectivity and defects such as dishing due to the reduction of abrasive concentration. This paper introduces the manufacturing technique of FAP. And the tungsten CMP using FAP achieved the good conclusion in point of the removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary with the pad life-time.

• 공학논문집
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• 제6권2호
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• pp.33-38
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• 2004

To investigate the reliability of the MTJs on the roughness of insulating tunnel barrier, we prepared two MTJs with the different uniformity of barrier thickness. Namely, the one has uniform insulating barrier thickness; the other has non-uniform insulating barrier thickness as compared to different thing. As to depositing amorphous layer CoZrNb under the pinning layer IrMn, we achieved MTJ with uniform barrier thickness. Toinvestigate the reliability of the MTJs dependent on the bottom electrode, time-dependent dielectric breakdown (TDDB) measurements were carried out under constant voltage stress. The Weibull fit of out data shows clearly that $t_{BD}$ scales with the thickness uniformity of MTJs tunnel barrier. Assuming a linear dependence of log($t_{BD}$) on stress voltages, we obtained the lifetime of $10^4$years at a operating voltage of 0.4 V at MTJs comprising CoNbZr layers. This study shows that the reliabilityof new MTJs structure was improved due to the ultra smooth barrier, because the surface roughness of the bottom electrode influenced the uniformity of tunnel barrier.

• 전기화학회지
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• 제12권4호
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• pp.317-323
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• 2009

돌출부를 지니고 있는 전극의 전기도금 공정에 대한 이론적 이차 전류분포에 대하여 고찰하였다. 전극이 모두 전도체인 경우(Case 1)와 돌출부위만 전도체인 경우(Case 2) 두 가지 경우에 대하여 인가전위, 이온교환 전류밀도와 용액의 비전도도의 비인 $\xi$값, aspect ratio의 영향 등에 대하여 살펴보았다. 그 결과 인가 전위와 $\xi$값이 증가할수록 전류분포는 불균등화가 심화됨을 알 수 있었다. Aspect ratio가 작아질수록 전류분포가 보다 균등화되며 Case 2의 경우가 Case 1의 경우 보다 균등도가 좋아짐을 알 수 있었다. 돌출부위가 다양한 모양으로 이루진 전극에 대해서도 이 모델을 적용한 결과 전극 표면에 따른 국부 전류분포를 동시에 계산할 수 있음을 알 수 있었고 이 경우에도 이전과 마찬가지로 $\xi$값이 감소할수록 전류분포의 균등도가 좋아짐을 알 수 있었다.

• 한국광학회지
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• 제30권6호
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• pp.219-225
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• 2019

냉각형 검출기를 사용하는 열상장비에서 렌즈의 표면 반사율에 의해 발생하는 나르시서스는 검출기의 불균일 보정(non-uniformity correction, NUC)에 의해 제거할 수 있다. 그래서 일반적으로 열상장비에서는 나르시서스를 무시할 수 있다고 가정한다. 그러나 불균일 보정은 시스템의 민감도를 감소시켜 열상장비의 성능인 최소분해능온도차에 영향을 줄 수 있다. 또한 시스템 내부의 온도가 변하면 불균일 보정 후에도 나르시서스에 의해 음영이 발생할 수 있다. 그래서 설계 단계에서 나르시서스를 고려한 설계가 필요하다. 본 논문에서는 중적외선 광학계를 설계하고 렌즈 표면 반사율을 1%로 설정하여 나르시서스 양을 분석하였다. 또한 설계를 초기설계, 개선설계, 최소화설계 단계로 구분하여 나르시서스 양을 초기 설계 대비 약 56% 수준으로 개선하였다.