• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.292-295
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• 2001

The NdBaCuO superconducting samples were prepared by the Zone melting under low oxygen partial pressure. After the zone-melting the oxygenation process of the NdBaCuO samples in a oxygen flow furnace was studied. In order to compare the oxygenation condition the sintering NdBaCuO samples were studied also. In the study it is found that the optimum temperature for the oxygenation is $350{\circ}C$, and the oxygen flow speed, the sample volume and the surface area of the sample would if1uence the oxygenation and the oxygen content.

• Archives of Plastic Surgery
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• v.49 no.2
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• pp.141-149
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• 2022

Breast implant-associated anaplastic large cell lymphoma (BIA-ALCL) is a recently spotlighted T-cell origin non-Hodgkin's lymphoma with an increasing incidence of over 800 cases and 33 deaths reported worldwide. Development of BIA-ALCL is likely a complex process involving many factors, such as the textured implant surface, bacterial biofilm growth, immune response, and patient genetics. As the incidence of BIA-ALCL is expected to increase, it is important for all surgeons and physicians to be aware of this disease entity and acquire thorough knowledge of current evidence-based guidelines and recommendations. Early detection, accurate diagnosis, and appropriate treatment are the foundations of current care.

• Transactions on Electrical and Electronic Materials
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• v.14 no.4
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• pp.208-210
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• 2013

ZnO films were deposited on glass substrates by radio frequency (RF) magnetron sputtering and exposed to intense electron beam irradiation to investigate the effects of electron irradiation on the properties of the films. Although all of the films had ZnO (002) textured structure regardless of electron irradiation, the grain sizes of the films decreased with electron irradiation. Surface roughness also depended on electron irradiation. The surface roughness varied between 2.3 and 1.6 nm, depending on the irradiation energy. Based on photoluminescence (PL) characterization, the most intense UV emission was observed from ZnO films irradiated at 900 eV. Since the intensity of UV emission is dependent upon the stoichiometric of ZnO films, we conclude that 900 eV was the optimum electron irradiation energy to achieve the best stoichiometric of ZnO films in this study.

• Current Photovoltaic Research
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• v.5 no.2
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• pp.59-62
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• 2017

Surface texturing is affected the uniformity and size of pyramid with saw mark defect density. To analysis the influence of the saw mark defect density, we textured various si wafer. When the texturing process proceeds without the saw mark removal, silicon wafer of low-saw mark defect density showed small pyramid size of $3.5{\mu}m$ with the lowest average value of the reflectance of 10.6%. When texturing carried out after removal of the saw mark using the TMAH solution, we obtained a reflectance of about 11% and the large pyramid size of $5{\mu}m$. As a result, saw mark wafers showed a better pyramid structure than saw mark-free wafer. This result showed that saw mark can take place more smooth etching by the KOH solution and saw mark-free wafer is determined to be a factor that have a higher reflectance and a large pyramid.

• Applied Chemistry for Engineering
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• v.18 no.2
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• pp.183-187
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• 2007

$SiO_2/TiO_2$ core-shell particles with controlled shell thickness were prepared using large silica particles. The thickness of titania coating layer was varied from 8 nm to 38 nm depending on the number of coating steps from 1 to 3 times. After titania coating, the core-shell particles showed textured surface due to the titania coating layer, resulting in 3~25 times increase of specific surface areas. The properties of titania coated silica particles were characterized by FE-SEM, Zeta potential meter, BET, and XRD.

• Journal of the Korean institute of surface engineering
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• v.42 no.3
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• pp.122-127
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• 2009

Ga/Al doped ZnO (GAZO) thin films were prepared on non-alkali glass substrate by co-sputtering system using two DC cathodes equipped with AZO ($Al_2O_3$:2.0 wt%) target and GZO ($Ga_2O_3$:6.65 wt%) target. This study examined the influence of Al/Ga concentration and substrate temperature on the electrical, structural and optical properties of GAZO films. The lowest resistivity $1.95{\times}10^{-3}{\Omega}cm$ was obtained at room temperature. With increasing substrate temperature, resistivity of GAZO film decreased to a minimum value of $7.47{\times}10^{-4}{\Omega}cm$ at below $300^{\circ}C$. Furthermore, when 0.05% $H_2$ gas was introduced, resistivity of GAZO film decreased to $6.69{\times}10^{-4}{\Omega}cm$. All the films had a preferred orientation along the (002) direction, indicating that the deposited films have hexagonal wurtzite structure formed by the textured growth along the c-axis. The average transmittance of the films was more than 85% in the visible light range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.417-418
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• 2008

Transparent conductive oxide (TCO) are necessary as front electrode or anti-reflecting coating for increasing efficiency of LED and Photodiode. In this paper, aluminum-doped Zinc oxide films(AZO) were prepared by DC magnetron sputtering on glass(corning 1737) and Si substrate at temperature of $100^{\circ}C$ and then annealed at temperature of $400^{\circ}C$ for 1hr in Ar and vaccum. The AZO films were etched in diluted HCL (0.5 %) to examine the surface morphology properties. After annealing, Structural and electrical property were investigated. The c-axis orientation along (002) plane was enhanced and the electrical resistivity of the AZO film decreased from $1.1\times10^{-1}$ to $1.6\times10^{-2}{\Omega}cm$. We observed textured structure of AZO thin film etched for 2s.

• Journal of computational fluids engineering
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• v.14 no.4
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• pp.56-61
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• 2009

This study deals with the numerical investigation on two-dimensional lubrication characteristics of micro-dimple shapes fabricated on solid surfaces by using the commercial CFD code (Fluent V.6.3) to examine the influence of micro dimple depth and width on the reduction in friction under the sliding plate condition. In addition, single and multiple dimple arrays are simulated, all for a fixed area fraction of dimple on the surface. As a result, it is found that the existence of micro-dimpled surface makes it possible to substantially reduce the friction forces exerted on the surfaces, and such an optimum dimple depth would be present because the dimple depth larger than the optimum value did no longer affect the reduction in shear stresses, indicating that the reduction of friction is likely to be associated with inner flows of lubricant inside dimples. Moreover, it is observed that at the fixed area fraction, the friction reduction increases with the increase of dimple diameter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.146-149
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• 2004

Porous silicon(PS) as an excellent light diffuser can be used as an antireflection layer without other antireflection coating(ARC) materials. PS layers were obtained by electrochemical etching(ECE) anodization of silicon wafers in hydrofluoric acid/ethanol/de-ionized(DI) water solution($HF/EtOH/H_2O$). This technique is based on the selective removal of Si atoms from the sample surface forming a layer of PS with adjustable optical, electrical, and mechanical properties. A PS layer with optimal ARC characteristics was obtained in charge density (Q) of 5.2 $C/cm^2$. The weighted reflectance is reduced from 33 % to 4 % in the wavelength between 400 and 1000 nm. The weighted reflectance with optimized PS layers is much less than that obtained with a commercial SiNx ARC on a potassium hydroxide(KOH) pre-textured multi-crystalline silicon(mc-Si) surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.454-454
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• 2010

In order to achieve a high efficient a-Si solar cell, the TCO (transparent conductive oxide) substrates are required to be a low sheet resistivity, a high transparency, and a textured surface with light trapping effect. Recently, a zinc oxide (ZnO) thin film attracts our attention as new coating material having a good transparent and conductive for TCO of solar cells. In this paper the optical properties of $H_2$ post-treated BZO (boron doped ZnO, ZnO:B) thin film are investigated with $O_2$-plasma treatment. The BZO thin films by MOCVD (Metal Organic Chemical Vapor Deposition) are investigated and the samples of $H_2$ post-treated BZO thin film are tested with $O_2$-plasma treatment by plasma treatment system with 13.56 MHz as RIE (Reactive Ion Etching) type. We measured the optical properties and surface morphology of BZO thin film with and without $O_2$-plasma treatment. The optical properties such as transmittance, reflectance and haze are measured with integrating sphere and ellipsometer. This result of the BZO thin film with and without $O_2$-plasma treatment is application to the TCO for solar cells.