• Progress in Superconductivity
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• v.6 no.1
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• pp.79-83
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• 2004

We fabricated Bi-2223/Ag superconductor tape with 55 filaments and estimated the magnetic field dependence of critical current (I$_{c}$) and index n (n) up to 30 T at 4.2 K. The I$_{c}$ and n were characterized as a function of external magnetic field parallel to the tape surface on increasing and decreasing field, using a 35 T hybrid magnet. The $I_{c}$ was estimated to be 325 A, and n was 32, 22, and 26 in the electric field range of $0.1 ∼1\mu$V/cm, 1∼10 $\mu$V/cm, and 0.1∼10 $\mu$V/cm, respectively, under self-field at 4.2 K. It was observed that $I_{c}$ was dependent on magnitude of magnetic field and it decreased exponentially as the field increased; in a parallel and increasing field, It was 128 A at 30 T which is approximately 40% of critical current in self-field. In addition, the $I_{c}$ was higher on decreasing field than that on increasing one. On the other hand, n did not significantly depend on field strength up to 30 T, nor varied on whether increasing or decreasing field; n value in 0.1∼1 $\mu$V/cm was 23.0$\pm$5.2 and 27.8$\pm$8.0 on increasing and decreasing field, respectively. The n value on decreasing magnetic field was slightly higher than that on increasing field. This hysteretic behavior of n was similar to that of$ I_{c}$, which is related to the trapped flux at the grain boundary.ary.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.260-260
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• 1999

We compared c-axis tunneling characteristics of small stacked intrinsic Josephson junctions prepared on the surface of pristine, I-, and HgI$_2$-intercalated Bi$_2Sr_2CaCu_2O_{8+x}$ (Bi2212) single crystals. The R(T) curves are almost metallic in I-Bi2212 specimens, but semiconducting in HgI$_2$-Bi2212 ones.· The transition temperatures were 82.0 K, 73.0 K, and 76.8 K for pristine Bi2212, I-Bi2212, and HgI2-Bi2212 specimens, respectively, consistent with p-T$_c$ phase diagram. Current-voltage (IV) characteristics of both kinds of specimens show multiple quasiparticle branches with well developed gap features, indicating Josephson coupling is established between neighboring CuO$_2$ planes. The critical current I$_c$ of I-Bi2212 is almost the same as of that of pristine crystals, but I$_c$ is much reduced in Hgl$_2$-Bi2212. In spite of expanded interlayer distances, the interlayer coupling is not significantly affected in I-Bi2212due to holes generated by iodine atoms. The coupling in HgI$_2$-Bi2212 is, however, weakened due to inertness of HgI$_2$ molecules and the expansion of interlayer distance. Relation between the superconducting transition temperature T$_c$ and the critical current I$_c$ seems to contradict Anderson's interlayer-pair-tunneling theory but agree with a modified version of it.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.75-82
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• 1999

TE$_{01\;{\delta}}$ mode Cavity Resonators with a low loss dielectric rod and YBa$_2Cu_3O_{7-{\delta}}$ (YBCO) endplates were prepared and their microwave properties were studied at temperatures above 30 K. Both sapphire and rutile were used as the dielectrics. The TE$_{01\;{\delta}}$ mode Q$_0$ of the resonator, designed to work as a tunable resonator with variations in the gap distance (s) between the dielectric rod and the top YBCO, was more than 1000000 at s = 0 mm and at 30 K and .the resonant frequency of 19.56GHz when a sapphire rod was used for the dielectric. The TE$_2Cu_3O_{7-{\delta}}$ mode resonant frequency (f$_0$) appeared to decrease as the temperature is raised. Meanwhile, the temperature dependence of the TE$_2Cu_3O_{7-{\delta}}$ mode f$_0$ of the rutile-loaded resonator appeared different with f$_0$ increasing according to the temperature and Q$_0$ more than 300000 at 30 K and f$_0$ = 8.56 CHz. Comparisons were made between the microwave properties of the sapphire-loaded and the rutile-loaded resonators. Also, applications of the TE$_2Cu_3O_{7-{\delta}}$ mode cavity resonator for a tunable resonator with a very high Q$_0$ as · well as a characterization tool for surface resistance measurements of HTS films are described.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.66-69
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• 2000

We have observed the morphology of YBCO thin films grown on the SrTiO$_3$(100) substrates by the Pulsed Laser Deposition method. AFM and SEM images show that the YBCO grains grow spirally from their own seeds whereas outgrowths are considered to remain unchained as the film thickness increases. The images of various stages of film growth suggest that the outgrowths of 1000${\sim}$2000 ${AA}$ size are mainly formed at the very early stage of film growth. The results of XRD measurement clearly show that even a film of about 10 ${AA}$ thickness already forms orthorhombic YBCO structure although common superconducting resistivity behavior is known to be observed for the films with thickness above 100 ${AA}$.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.152-159
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• 1999

YBa$_2Cu_3O_{7-{\delta}}$ (YBCO) films grown on CeO$_2$-buffered r-cut sapphire substrates (CbS's) were prepared and their structural and electrical properties were measured. Post-annealed CeO$_2$ films were used as buffer layers for the experiments. It turned out that the YBCO films grown on post-annealed CbS's had the rms roughness of less than 20 ${\AA}$ and peak-to-peak roughness of about 30 ${\AA}$ when the YBCO film thickness was 3000 ${\AA}$. Meanwhile, YBCO films on in-situ grown CeO$_2$ buffer layers on r-cut sapphire substrates appeared to have the peak-to-peak roughness of more than 450 ${\AA}$. X-ray diffraction data revealed that the YBCO flms were epitaxially grown along the c-axis with the typical FWHM of(005) ${\theta}$ -2 ${\theta}$ peak about 0. 16 $^{\circ}$ and ${\Delta}$ ${\omega}$ of the (005) peak about 0.5 $^{\circ}$. T$_c$ > 87 K, ${\Delta}$T < 1 K and R(look)/R(100K) ${\ge}$3 were observed from the YBCO films. Applicability of the YBCO films for high-frequency applications was described.