• Bulletin of the Korean Chemical Society
• /
• v.28 no.8
• /
• pp.1341-1345
• /
• 2007

The surface chemistry of D2O dosed Zircaloy-4 (Zry-4) surface followed by Ar-ion bombardment and annealing was studied by means of X-ray photoelectron spectroscopy (XPS) and Ultraviolet photoelectron spectroscopy (UPS). In the XPS study, Ar-ion bombardment caused decrease of the oxygen on the surface region of Zry-4 and therefore led to change the oxidation states of the zirconium from oxide to metallic form. In addition, oxidation states of zirconium were changed to lower oxidation states of zirconium due to depopulation of oxygen on the surface region by annealing. Up to about 787 K, the bulk oxygen diffused out to the subsurface region and after this temperature, the oxygen on the surface of Zry-4 was depopulated. UPS study showed that the valence band spectrum of the D2O exposed Zry-4 exhibited a dominant peak at around 13 eV and no clear Fermi edge was detected. After stepwise Ar+ sputtering processes, the decrease of the oxygen on the surface of Zry-4 led to suppress the dominant peak around 13 eV, the peak around 9 eV and develop a new peak of the metallic Zr 4d state (20.5-21.0 eV) at the Fermi level.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.31A no.5
• /
• pp.126-133
• /
• 1994

Doping effects and semiconductor behaviors of the dispersed p- and n-Si, p- and n- GaAs particles in the aqueous electrolyte have been studied using microelectrophoretic, voltammetric and chronoamperometric techniques. The cations (K$^{+}$) are adsorbed on both the p- and n- Si particle surfaces regardless of the sign of space charges in the depletion layers, i.e. doping profiles. The surface states are negatively charged acceptor states. On the other hand, the anions (CI$^{-}$) are adsorbed on both the p- and n- GaAs particle surfaces regardless of the sign of space charges in the depletion layers, i.e. doping profiles. The surface states are positively charged donor states. Under the same conditions, electrophoretic mobilities, electrochemical processes, doping effects and related semiconductor behaviors of the Si and the GaAs particles are similar regardless of the doping profiles, i. e. dopants and doping concentrations. The doping effects and related semiconductor behaviors of the dispersed p- and n- type semiconductor particles are gradually lost with decreasing dimensions.

• Journal of the Korean Society for Precision Engineering
• /
• v.16 no.7
• /
• pp.188-195
• /
• 1999

Cutting edge plays an important role in generating machined surface. In order to consider the geometric effects of the cutting edge on mechanical states, the concept of ploughing force and stagnation point was introduced which explains the generating mechanism of machined surface during cutting. The effects of edge radius and nose radius of cutting tool on the distribution of residual stresses of the machined surface having several hardness were studied. Good machined surface having high compressive residual surface stresses can be achieved if cutting tools having large edge radius and small nose radius are used for cutting work materials having high hardness with high depth of cut. The magnitude of edge radius and the hardness of work material also affected the shape of the chip in orthogonal cutting.

• Journal of the Korean Geographical Society
• /
• v.43 no.5
• /
• pp.701-714
• /
• 2008

This study examines the prevailing synoptic-scale mechanisms favorable for long-lived summer Persistent Positive Temperature Anomalies (PPTAs) as well as winter PPTAs in the United States. Such long-lived PPTAs usually occur in the south-central region of the United States in summer, but in the southwestern part of the United States in winter. Composite analyses of surface and pressure level data demonstrate that the formation of both winter and summer PPTAs is closely related to the movement of subtropical high pressure systems in the Pacific Ocean and Atlantic Ocean, respectively. The occurrence of long-lived summer PPTAs usually coincides with an extremely stable atmospheric condition caused by persistent blocking by mid- to upper-tropospheric anticyclones. Significant surface forcing is also easily identified through relatively high Bowen ratios at the surface. Warm air advection is, however, weak and appears to be an insignificant element in the formation of long-lived summer PPTAs. On the other hand, synergistic warming effects associated with adiabatic heating under an anticyclonic blocking system as well as significant warm air advection characterize the favorable synoptic environments for long-lived winter PPTAs. However, the impact of surface forcing mechanisms on winter PPTAs is insignificant.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2002.10a
• /
• pp.477-481
• /
• 2002

Grinding which is the final finishing step in the machining processes plays an important role fur precision manufacturing because it directly affect the product quality. Since the ground surface is affected by the states of grains and voids on the grinding wheel surface, the wheel should be dressed before the machined surface deteriorates over a quality limit. This paper describes a systematic approach to decide a proper dressing chance. A fabricated eddy current sensor and CCD camera are used to measure the loading on the working wheel surface and to visualize the wheel surface states respectively. The dressing chance can be properly decided through the relation between the variation of the thresholding image of the wheel and the machined surface roughness as the variation of the eddy current sensor output is greater than the detected value previously.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.10 no.2
• /
• pp.100-106
• /
• 2010

The impact of surface quantization on device parameters of a Si metal oxide semiconductor (MOS) capacitor has been analyzed in the present work. Variation of conduction band bending, position of discrete energy states, variation of surface potential, and the variation of inversion carrier concentration at charge centroid have been analyzed for different gate voltages, substrate doping concentrations and oxide thicknesses. Oxide thickness calculated from the experimental C-V data of a MOS capacitor is different from the actual oxide thickness, since such data include the effect of surface quantization. A correction factor has been developed considering the effect of charge centroid in presence of surface quantization at strong inversion and it has been observed that the correction due to surface quantization is crucial for highly doped substrate with thinner gate oxide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.236-239
• /
• 2002

Surface states of silicone polymer treated by plasma were investigated by the analysis by x-ray photoelectron spectroscopy (XPS) and surface voltage decay. Plasma treatment causes the silica-like oxidative layer, which is confirmed with XPS, and lowers surface resistivity with increasing the plasma treatment time. Using the decay time constant of surface voltage, the calculated surface resistivity was compared with the value directly measured by a voltage-current method. A good agreement between two methods was obtained. In addition, we estimated the thermal activation energy for surface conduction, Based on our results, we could understand the relationship between surface chemical states and surface electrical properties.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.271-271
• /
• 2013

The defect states of a Ar-sputtered SiO2 surface on Si (001) were investigated using Auger electron spectroscopy (AES) and reflection electron energy loss spectroscopy (REELS). The REELS spectra at the primary electron energy of 500 eV showedthat three peaks at 2.5, 5.1, and 7.2 eV were found within the band gap after sputtering. These peaks do not appear at the primary electron energies of 1,000 and 1,500 eV, which means that the defect states are located at the extreme surface of a SiO2/Si thin film. According to the calculations, two peaks at 7.2 and 5.1 eV are related to neutral oxygen vacancies. However, the third peak at 2.5 eV has never been previously reported and the theories proposed that this defect state may be due to Si-Si bonding. Our Auger data showed that a peak for Si-Si bonding at 89 eV appears after Ar ion sputtering on the surface of the sample, which is consistent with the theoretical models.

• Journal of Magnetics
• /
• v.1 no.1
• /
• pp.9-13
• /
• 1996

The effects of surface relaxation on surface and interface magnetism in Fe/Cr (001) are investigated using the highly precise all-electron total-energy full-potential linearized augmented plane wave method. The Fe-Cr interlayer spacing is deter-mined by total-energy calculation and it is found to be relaxed downward by 18%. For the relaxed system, the magnetic moment of surface Fe is highly suppressed to be $1.72\mu_B$compared to the unrelaxed case ($2.39\mu_B$). This reduction of magnetic moment is considered as a result of the enhanced hybridization between Fe-d and Cr-d states, which can be seen from the calculated density of states. This work suggests the importance of effect of relaxation to the surface and interface magnetism in Fe/Cr system.

• Proceedings of the Korea Institute of Convergence Signal Processing
• /
• 2000.12a
• /
• pp.221-224
• /
• 2000

We consider one of robust controller, fuzzy-sliding mode controller dealing with model uncertainty, simplified representation of nonlinear system, changed parameters of plant. We propose fuzzy-sliding mode algorithm which provides control input that has system states approaching the choosed sliding surface. This fuzzy controller has a rule base to get initial states converged on sliding surface. This algorithm Is applied to a transfer function of DC motor to be modeled simply and do position control of DC motor due to system parameters. We compare fuzzy-sliding mode controller to both sliding mode controller and fuzzy controller to identify roust control.