• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.25-29
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• 2010

We have investigated the effect of surface roughness of TCO substrate on the characteristics of OLED (organic light emitting diodes) devices. In order to control the surface roughness of AZO thin films, we have processed photo-lithography and reactive ion etching. The micro-size patterned mask was used, and the etching depth was controlled by changing etching time. The surface morphology of the AZO thin film was observed by FESEM and atomic force microscopy (AFM). And then, organic materials and cathode electrode were sequentially deposited on the AZO thin films. Device structure was AZO/${\alpha}$-NPD/DPVB/$Alq_3$/LiF/Al. The DPVB was used as a blue emitting material. The electrical characteristics such as current density vs. voltage and luminescence vs. voltage of OLED devices were measured by using spectrometer. The current vs. voltage and luminance vs. voltage characteristics were systematically degraded with increasing surface roughness. Furthermore, the retention test clearly presented that the reliability of OLED devices was directly influenced with the surface roughness, which could be interpreted in terms of the concentration of the electric field on the weak and thin organic layers caused by the poor step coverage.

• Restorative Dentistry and Endodontics
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• v.21 no.1
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• pp.136-149
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• 1996

The effects of various All-Etching Agents (10% phosphoric acid, 10% maleic acid and 10 % citric acid) and 32 % phosphoric acid and varied etching time were evaluated by observing the morphology of the etched enamel surfaces using Scanning electron microscopy and by measuring the shear bond strength of a composite resin to human enamel. A total of 156 extracted premolar and molar teeth free of irregularities were employed in this study. Specimens for the observation of enamel morphology were divided into 12 groups of 3 teeth each, based on the type of etchant used and application time. After exposure to the etching agent specimens were washed air-dried and then glued to aluminum stubs and coated with a layer of gold for examination in the scanning electron microscope. Specimens for the evaluation of bond strength were divided into 12 groups of 10 teeth each also based on the type of etchant used and application time. After exposure to the etching agent the specimens were washed, air-dried and a thin layer of bonding agent was applied using a brush. Z 100 composite resin was light cured to the surface and stored at $37^{\circ}C$, 100% humidity for 7 days. An Instron Universal Testing Machine was used to apply a shearing force at $90^{\circ}$ angle from the enamel surface. It is concluded from this study that commercial All-etching agents can be used with a 15-second etching without adversely affecting retention of dental resin materials. At the same time, the acid concentration is probably a suitable compromise regarding the acid's function as a dentin demineralizing all-etch conditioning agent. The following results were obtained. 1. Specimens etched with 10 % citric acid showed a random superficial etching pattern which could not be related to prism morphology. 2. Specimens etched with 10 % and 32 % phosphoric acid and 10 % maleic acid showed a type I pattern in which core material was preferentially removed leaving the prism peripheries relatively intact or a type II pattern in which prism peripheries were preferentially removed. This delineation became more distinguished as etching time was increased. 3. All-Etching Agents and 32 % phosphoric acid showed a statistically significant higher shear bond strength at 15 seconds etching time.(p<0.05) 4. 10 % maleic acid and 32 % phosphoric acid exhibited a statistically significant higher shear bond strength than 10 % phosphoric and citric acid at 15 seconds etching time.(p<0.05).

• Journal of the korean academy of Pediatric Dentistry
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• v.25 no.1
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• pp.103-115
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• 1998

Adhesion of composite resin to tooth structure has been of tremendous signgicance in clinical dentistry. Due to the lack of adhesion between composite restorative resins and enamel and dentin, microleakage occurs at the tooth/restoration interface. This may lead to discoloration, secondary caries, marginal breakdown, postoperative sensitivity, and even pulpal pathology. According to extensive use of composite resin, every effort on improving bonding strength and reducing microleakage between a tooth and composite resin has been continued. This study was conducted to determine the difference in microleakage in enamel and dentin treated with air-abrasion, acid etching and combination when restored with composite resin. Class V cavities were prepared on 30 premolars. The specimens were divided into following groups. group 1:air-abrasion+Scotchbond Multi-purpose group 4 :air-abrasion+All-Bond 2 group 2:acid etching+Scotchbond Multi-purpose group 5 :acid etching+All-Bond 2 group 3:combination+Scotchbond Multi-purpose group 6 :combination+All-Bond 2 #combination:air-abrasion + acid etching The specimens were filled with Z-100 after application of Scotchbond Multi-purpose and All-Bond 2. Thermocycling was conducted by alternately dipping the specimens in $5^{\circ}C$ and $55^{\circ}C$ water for 30 seconds 500 times. 1% methylene blue was applied and the specimens were left for 24 hours at $37^{\circ}C$. After washing out the dye, the tooth was sectioned buccolingually along the axis. The sectioned surface was observed with stereoscope for dye penetration. The author has measured the microleakage in teeth prepared with air-abrasion, acid ethching and combination to study the difference in microleakage following different methods of tooth surface treatment and has come to following results. 1. In comparing microleakage between groups, group 1 and 4 showed statistically significant difference from group 2, 3, 5 and 6(p<0.05). There was no significant difference among group 2, 3, 5, 6(p>0.05) nor between group 1 and 4(p>0.05). 2. In comparing microleakage among tooth surface treatment methods, Air-abrasion group showed significantly more microleakage than acid etching group and combination(airabrasion + acid etching) group(p<0.05). Combination(acid etching+air-abrasion)group tended to show lesser microleakage than acid etching group, but this was not statistically significant(p>0.05). 3. In comparing microleakage between bonding agents, there was no statistically significant difference between Scotch bond Multi-purpose and All-Bond 2(p>0.05).

• Journal of the korean academy of Pediatric Dentistry
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• v.30 no.1
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• pp.41-46
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• 2003

In order to evaluate the sufficient etching time for successful bonding and also minimizing unnecessary mineral loss, the enamel surface roughness analysis was performed using confocal laser scanning microscopy. Sixty extracted sound human molar teeth were imbedded in the center of acrylic cylinder using self-curing clear resin exposing buccal surface, and then polished with series of SiC paper(220, 500, 800, 1000, 2000, 4000 grit). Each specimen was randomly assigned to six groups(N=10). 37% phosphoric acid was applied to the polished tooth surface for 10, 20, 30, 40, 50, 60 seconds respectively and washed with copious water. After the surface roughness analysis, five roughness parameters(Sa, Sq, Sz, Sdr, Ra) were statistically analysed by ANOVA and Duncan post hoc test. We found that the all five parameters had higher roughness value in 30 seconds etching time, especially parameter Sz showed the lowest value in 10 seconds etching time and the highest value in 30 seconds etching time compared with the other etching times(p<0.05).

• Korean Chemical Engineering Research
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• v.58 no.3
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• pp.474-479
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• 2020

The etching solution for slimming of glass substrates was manufactured and HF was used as the main ingredient of wet etching solutions. Various types of strong acids such as HCl, HNO₃, H₂SO₄, amino acids and carboxylic acids such as citric acid, and etched solutions, respectively, were used to measure the etching rates and changes in surface shape of the glass. Regardless of the type of strong acids, the etching rate of the glass increased linearly as the added amount increased, and the sludge removal effect of the glass surface was also shown. The etching solution containing HCl showed more efficient results than other strong acids in the etching rate and the effect of removing sludge. The addition of carboxylic acid did not significantly affect the variation of etching rate, but had the effect of removing sludge. However, if amino acids were added, changes in etching rate and sludge removal were not significant.

• Nuclear Engineering and Technology
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• v.35 no.6
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• pp.507-514
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• 2003

Recently dry decontamination/surface-cleaning technology using plasma etching has been focused in the nuclear industry. In this study, the applicability of this new dry processing technique are experimentally investigated by examining the etching reaction of $UO_2$, Co, and Mo in r.f. plasma with the etchant gas of $CF_4/O_2$ mixture. $UO_2$ is chosen as a representing material for uranium and TRU (TRans-Uranic) compounds while metallic Co and Mo are selected because they are the principal contaminants in the used metallic nuclear components such as valves and pipes made of stainless steel or inconel. Results show that in all cases maximum etching rate is achieved when the mole fraction of $UO_2\;in\;CF_4/O_2$ mixture gas is $20\%$, regardless of temperature and r.f. power. In case of $UO_2$, the highest etching reaction rate is greater than 1000 monolayers/min. at $370^{\circ}C$ under 150 W r.f. power which is equivalent to $0.4{\mu}m/min$. As for Co, etching reaction begins to take place significantly when the temperature exceeds $350^{\circ}C$. Maximum etching rate achieved at $380^{\circ}C\;is\;0.06{\mu}m/min$. Mo etching reaction takes place vigorously even at relatively low temperature and the reaction rate increases drastically with increasing temperature. Highest etching rate at $380^{\circ}C\;is\;1.9{\mu}m/min$. According to OES (Optical Emission Spectroscopy) and AES (Auger Electron Spectroscopy) analysis, primary reaction seems to be a fluorination reaction, but carbonyl compound formation reaction may assist the dominant reaction, especially in case of Co and Mo. Through this basic study, the feasibility and the applicability of plasma decontamination technique are demonstrated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.259-259
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• 2008

The LTCC (Low Temperature Co-fired Ceramic) technology meets the requirements for high quality microelectronic devices and microsystems application due to a very good electrical and mechanical properties, high reliability and stability as well as possibility of making integrated three dimensional microstructures. The wet process, which has been applied to the etching of the metallic thin film on the ceramic substrate, has multi process steps such as lithography and development and uses very toxic chemicals arising the environmental problems. The other side, Plasma technology like ion beam sputtering is clean process including surface cleaning and treatment, sputtering and etching of semiconductor devices, and environmental cleanup. In this study, metallic multilayer pattern was fabricated by the ion beam etching of Ti/Pd/Cu without the lithography. In the experiment, Alumina and LTCC were used as the substrate and Ti/Pd/Cu metallic multilayer was deposited by the DC-magnetron sputtering system. After the formation of Cu/Ni/Au multilayer pattern made by the photolithography and electroplating process, the Ti/Pd/Cu multilayer was dry-etched by using the low energy-high current ion-beam etching process. Because the electroplated Au layer was the masking barrier of the etching of Ti/Pd/Cu multilayer, the additional lithography was not necessary for the etching process. Xenon ion beam which having the high sputtering yield was irradiated and was used with various ion energy and current. The metallic pattern after the etching was optically examined and analyzed. The rate and phenomenon of the etching on each metallic layer were investigated with the diverse process condition such as ion-beam acceleration energy, current density, and etching time.

• Journal of the Korean institute of surface engineering
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• v.57 no.3
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• pp.165-178
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• 2024

In semiconductor memory device manufacturing, the capability for high aspect ratio contact (HARC) etching determines the density of memory device. Given that there is no standardized definition of "high" in high aspect ratio, it is crucial to continuously monitor recent technology trends to address technological gaps. Not only semiconductor memory manufacturing companies such as Samsung Electronics, SK Hynix, and Micron but also semiconductor manufacturing equipment companies such as Lam Research, Applied Materials, Tokyo Electron, and SEMES release annual reports on HARC etching technology. Although there is a gap in technological focus between semiconductor mass production environments and various research institutes, the results from these institutes significantly contribute by demonstrating fundamental mechanisms with empirical evidence, often in collaboration with industry researchers. This paper reviews recent studies on HARC etching and the study of dielectric etching in various technologies.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.857-859
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• 2007

Durability of LCD glass, OA-10 and OA-21, to $SiCl_4$ and $SF_6$ gases was investigated. Reaction products are generated on the glass surface. The reaction products are reduced by changing the etching conditions. the durability of OA-10 and OA-21 to the dry etching gases is comparable.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2003.05a
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• pp.448-451
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• 2003

This study describes a new maskless nano-fabrication technique of Si (100) using the combination of nanometer-scale mechanical forming by nano-indenter XP and KOH wet etching. First the surface of a Si (100) specimen was machined by using the nano-machining system, which utilizes the mechanism of the nano-indenter XP. Next, the specimen was etched by KOH solution. After the etching process, the convex structure or deeper hole is made because of masking or promotion effect of the affected layer generated by nano-machining. On the basis of this interesting fact, some sample structures were fabricated.