• Korean Journal of Materials Research
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• v.34 no.6
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• pp.303-308
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• 2024

The semiconductor and display industries require the development of plasma resistant materials for use in high density plasma etching process equipment. Yttria (Y₂O₃) is a ceramic material mainly used to ensure good plasma resistance properties, which requires a dense microstructure. In commercial production, a sintering process is applied to reduce the sintering temperature of Y₂O₃. In this study, the effect of the addition of glass frit to the sintered specimen was examined when manufacturing yttria sintered specimens for semiconductor process equipment parts. The Y₂O₃ specimen was shaped into a Ø50 mm size and then sintered at 1,600 ℃ for 1~8 h. The characteristics, X-ray diffraction pattern, densities, contraction rate of the specimen, and swelling of the surface of the Y₂O₃ specimens were investigated as a function of the sintering time and glass frit addition. The Y₂O₃ specimen exhibited a density of over 4.9 g/cm³ as the sintering time increased, and the swelling phenomenon characteristics were improved by glass frit, by controlling particle size.

• The Journal of Korean Academy of Prosthodontics
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• v.46 no.5
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• pp.520-527
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• 2008

Purpose: This study was conducted to evaluate the shear bond strength of composite resin to dentin when etched with laser instead of phosphoric acid. Material and methods: Recently extracted forty molars, completely free of dental caries, were embedded into acrylic resin. After exposing dentin with diamond saw, teeth surface were polished with a series of SiC paper. The teeth were divided into four groups composed of 10 specimens each; 1) no surface treated group as a control 2) acid-etched with 35%-phosphoric acid 3) Er:YAG laser treated 4) Er,Cr:YSGG laser treated. A dentin bonding agent (Adapter Single Bond2, 3M/ESPE) was applied to the specimens and then transparent plastic tubes (3 mm of height and diameter) were placed on each dentin. The composite resin was inserted into the tubes and cured. All the specimens were stored in distilled water at $37^{\circ}C$ for 24 hours and the shear bond strength was measured using a universal testing machine (Z020, Zwick, Germany). The data of tensile bond strength were statistically analyzed by one-way ANOVA and Duncan's test at ${\alpha}$= 0.05. Results: The bond strengths of Er:YAG laser-treated group was $3.98{\pm}0.88$ MPa and Er,Cr:YSGG laser-treated group showed $3.70{\pm}1.55$ MPa. There were no significant differences between two laser groups. The control group showed the lowest bond strength, $1.52{\pm}0.42$ MPa and the highest shear bond strength was presented in acid-etched group, $7.10{\pm}1.86$ MPa (P < .05). Conclusion: Laser-etched group exhibited significantly higer bond strength than that of control group, while still weaker than that of the phosphoric acid-etched group.

• Restorative Dentistry and Endodontics
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• v.24 no.2
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• pp.310-321
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• 1999

In this in vitro study, confocal laser scanning microscopic morphology of dentin-resin interface and its relationship to shear bond strength were investigated after the exposed dentin surfaces were treated with 3 different kinds of dentin adhesive systems[three-step; Scotchbond Multi-Purpose Plus(SMPP), self-priming bonding resin; Single Bond(SB), self-etching primer; Clearfil Liner Bond 2(LB2)]. 52 extracted human molar teeth without caries and/or restorations. The experimental teeth were randomly divided into three groups of seventeen teeth each. In five teeth of each group, class V cavities(depth: 1.5mm) with 900 cavosurface angles were prepared at the cementoenamel junction on buccal and lingual surfaces. Bonding resins of each dentin adhesive system were mixed with rhodamine B. Primer of SMPP was mixed with fluorescein. In group 1. the exposed dentin was conditioned with etchant, applied with above primer and bonding resin of SMPP. In group 2, with etchant and self-priming bonding agent of SB. In group 3, with self-etching primer and bonding agent of LB2. After treatment with dentin adhesive systems, composite resin were applied and photocured. The experimental teeth were cut longitudinally through the center line of restoration and grounded so that about $90{\mu}m$-thick wafers of buccolingually orientated dentin were obtained. And, $70{\sim}80{\mu}m$-thick wafers sectioned horizontally, thus presenting a dentinal tubules at 900 to the cut surface of a remaining tooth, were obtained. Primer of SMPP mixed with rhodamine B was applied to these wafers. Confocal laser scanning microscopic investigations of these wafers were done within of 24 hours after treatment. To measure shear bond strength, the remaining twelve teeth of each group were grounded horizontally below the dentinoenamel junction, so that no enamel remained. After applying dentin adhesive systems on the dentin surface, composite was applied in the shape of cylinder. The cylinder was 5mm in diameter, and 2mm in thickness. Shear bond strength was measured using Instron with a cross-head speed of 0.5mm/min. It was concluded as follows ; 1. Hybrid layer of SMPP(mean: $4.56{\mu}m$) was thicker than that of any other groups. This value was not statistically significant thicker than that of SB(mean: $3.41{\mu}m$, p>0.05), and significant thicker than that of LB2(mean: $1.56{\mu}m$, p<0.05). There was a statistical difference between SB and LB2(p<0.05). 2. Although there were variations in the length of resin tag even in a sample, and in a group, most samples in SMPP and SB showed resin tags extending above $20{\mu}m$. But samples in LB2 showed resin tags of $10{\mu}m$ at best. 3. Besides primer's infiltration into demineralized peritubular dentin and dentinal tubules, fluorophore of primer was detected in the lateral branches of dentinal tubules. 4. All groups demonstrated statistically significant differences from one another(p<0.05), with shear bond strengths given in descending order as follows: SMPP(18.3MPa), SB(16.0MPa) and LB2(12.4MPa). 5. LB2 having thinnest hybrid layer($1.56{\mu}m$) showed the lowest shear bond strength(12.4MPa).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.4
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• pp.109-116
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• 2024

β-Ga₂O₃ is a representative ultra-wide bandgap (UWBG) semiconductor that has attracted much attention for power device applications due to its wide-bandgap of 4.9 eV and high-breakdown voltage of 8 MV/cm. In addition, because solution growth is possible, it has advantages such as fast growth rate and lower production cost compared to SiC and GaN [1-2]. In this study, we have successfully grown Si-doped 10 mm thick Si-doped β-Ga₂O₃ single crystals by the EFG (Edge-defined Film-fed Growth) method. The growth direction and growth principal plane were set to [010] / (010), respectively, and the growth speed was 7~20 mm/h. The as-grown β-Ga₂O₃ single crystal was cut into various crystal planes (001, 100, ${\bar{2}}01$) and off-angles (1^o, 3^o, 4^o), and then surface processed. After processed, the homoepitaxial layer was grown on the epi-ready substrate using the HVPE (Halide vapor phase epitaxy) method. The processed samples and the epi-layer grown samples were analyzed by XRD, AFM, OM, and Etching to compare the surface properties according to the crystal plane and off-angle.

• Korean Chemical Engineering Research
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• v.44 no.6
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• pp.588-596
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• 2006

The surface of polystyrene membrane treated by Ar, $O_2$ plasma, and the effects were observed before and after the treatment and permeability of $CO_2$, $N_2$ and selectivity of $CO_2$ relative to $N_2$ was measured using continuous flow gas permeation analyzer (GPA). The mole ratio of O over C in the surface was increased from 0 to 0.179 with Ar plasma treatment and route mean square of surface was increased from $15.86{\AA}$ to $71.64{\AA}$. Therefore the contact angle was decreased from $89.16^{\circ}$ to $18.1^{\circ}$. Thus Plasma treatments made surface of membrane tend to be highly hydrophilic. The optimum condition for the $CO_2$ permeability and ideal selectivity of the plasma treated membrane was as follows: the measurement of Ar (60 W, 2 min, $70^{\circ}C$) plasma treatment was $1.14{\times}10^{-12}[m^3(STP){\cdot}m/m^2{\cdot}sec{\cdot}atm]$ and 4.22. In the case of $O_2$ plasma treatment, the contact angle was decreased at $13.56^{\circ}$ with increase of O/C ratio ($0.189{\AA}$) and route mean square of surface ($57.10{\AA}$). The optimum condition for the $CO_2$ permeability and ideal selectivity of the plasma treated membrane was as follows: the measurement of $O_2$ (90 W, 2 min, $70^{\circ}C$) plasma treatment was $7.1{\times}10^{-12}[m^3(STP){\cdot}m/m^2{\cdot}sec{\cdot}atm]$ and 11.5. After plasma treatment, the changes of membrane surface were all subtly linked with both cross-linking and etching effects. Finally, it was confirmed that the gas permeation capacity and selectivity of the modified membrane with plasma could be improved by an appropriate control of the plasma conditions such as treatment time, the power input and sort of plasma gas.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.12
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• pp.8-13
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• 2001

Cerium oxide ($CeO_2$) thin film has been proposed as a buffer layer between the ferroelectric thin film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS) structures for ferroelectric random access memory (FRAM) applications. In this study, $CeO_2$ thin films were etched with $Cl_2$/Ar gas mixture in an inductively coupled plasma (ICP). Etch properties were measured for different gas mixing ratio of $Cl_2$($Cl_2$+Ar) while the other process conditions were fixed at RF power (600 W), dc bias voltage (-200 V), and chamber pressure (15 mTorr). The highest etch rate of $CeO_2$ thin film was 230 ${\AA}$/min and the selectivity of $CeO_2$ to $YMnO_3$ was 1.83 at $Cl_2$($Cl_2$+Ar gas mixing ratio of 0.2. The surface reaction of the etched $CeO_2$ thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is a Ce-Cl bonding by chemical reaction between Ce and Cl. The results of secondary ion mass spectrometer (SIMS) analysis were compared with the results of XPS analysis and the Ce-Cl bonding was monitored at 176.15 (a.m.u). These results confirm that Ce atoms of $CeO_2$ thin films react with chlorine and a compound such as CeCl remains on the surface of etched $CeO_2$ thin films. These products can be removed by Ar ion bombardment.

• The korean journal of orthodontics
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• v.28 no.5 s.70
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• pp.689-698
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• 1998

The purpose of this study was to evaluate the shear bond strength of light cured glass ionomer cement to enamel surface which treated with $37\%$ phosphoric acid, $10\%$ polyacrylic acid, $1.23\%$ acidulated phosphate fluoride gel and no etching agent. To compare the shear bond strength of glass ionomer cement, light-cured composite resin and chemically-cured composite resin were empoloyed as controls. Eight experiments groups were composed. 10 specimens of each group were bonded by metal bracket by tested in universal testing machine for shear bond strength, in stereoscope for adhesive remnants index. The data were evaluated statistically by SPSS/PC+. The results were as follows. 1. Among the groups of $37\%$ phosphoric acid treated and dry and bonded with light cured glass ionomer, light cured composite resin, and chemically cured composite resin, the shear bond strength of glass ionomer group showed no significant difference to the others, but the shear bond strength of chemically cured resin showed statistically lower than that of light cured resin (p<0.05). 2. The shear bond strengths of glass ionomer cement to enamel treated group with $1.23\%$ acidulated phosphate fluoride gel and $10\%$ polyacrylic acid and $37\%$ phosphoric acid showed statistically higher than that of no etched enamel group(p<0.U). 3. In the groups of glass ionomer cement, the presence of moisture was not significantly effect to the shear bond strength (p<0.05). 4. After debonding, no etched enamel group showed less residual materials on the enamel surface than the group of enamel etched with $37\%$ Phosphoric acid.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.7-13
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• 2011

[ $L1_0$ ]phase FePd nano-dot structures were successfully fabricated on self-organized Fe/Au bilayers. With atomic force microscopy, it is determined that surface morphologies of initially flat Fe/Au bilayer films were agglomerated and transformed their shape into nano-dots structures with increasing annealing temperature. With this bilayer as a template, FePd multilayers were deposited at various temperatures, i.e. $300^{\circ}C$, $350^{\circ}C$, $400^{\circ}C$, and $450^{\circ}C$. Surface morphologies of FePd superlattice had a near resemblance to self-organized bilayer. According to X-ray diffraction results, it is confirmed that $L1_0$ superlattice structures of FePd were obtained from samples which were annealed above $350^{\circ}C$. Results of X-ray photoelectron spectroscopy depth-profile analysis showed that chemical composition is identical to deposition sequence. As a result, without additional etching processes, fabrication of chemically ordered FePd superlattice nano-dots was achieved.

• Journal of the korean academy of Pediatric Dentistry
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• v.44 no.3
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• pp.341-349
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• 2017

Blood decontamination is an important factor in success of the orthodontic bracket. The purpose of this study is to evaluate the shear bond strength affected by blood decontamination. The shear bond strength was measured on blood decontamination before and after primer photopolymerization. And the adhesive remnants type and surface patterns was evaluated under scanning electron microscopy. A total of 50 human premolars were prepared. Group I was attached using conventional resin-acid etching method as control group. Group II and III were blood contaminated before curing primer and groups IV and V were blood contaminated after curing primer. Group II and IV were treated only with cotton pellet and Groups III and V were treated with cotton pellet after water washing. The mean shear bond strengths were in the order of groups I, V, III, II, and IV. In scanning electron micrographs group III and V showed more uniform surface than group II and IV. The ARI was significantly different between the control group and the experimental groups (p <0.05).

• Journal of the Korean Electrochemical Society
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• v.5 no.3
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• pp.111-116
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• 2002

Electrochemical scanning tunneling microscopy was employed to study the evolution of surface morphology during electrochemical preparation of Si(111)-H from Si(111) oxide. Anodic dark current of cyclic voltammogram in 0.2M $NH_4F$ solution (pH 4.7) decreased as the number of cycles increased and remained nearly constant after the second cycle. Then, the Si(111) oxide was entirely stripped, which was followed by H termination on the Si(111) surface. Hydrides at kink and step sites were etched more rapidly than on the terrace, which remained triangle pits with [112] oriented steps where existed stable monohydride. Then, triangle pits deepened. During chronomamperometry at 0.4V anodic dark current shoulder appeared and decreased slowly, indicated the stripping of Si(111) oxide and the formation of stable (112) oriented steps with monohydride. Additionally, the etching mechanism of Si(111)-H in 0.2M $NH_4F(pH 4.7)$ solution at +0.4V was discussed.