• Composites Research
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• v.21 no.1
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• pp.40-45
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• 2008

Rubber hose assembly for automotive hydraulic brake during operation is subject to combined stresses of cyclic pressure, cyclic bending and torsion as well as thermal load. The rubber hose is composed of ethylene-propylene diene monomer(EPDM) rubber layers reinforced by polyvinyl acetate(PVA) braided fabrics. A durability tester with loading rigs for inducing the above cyclic stresses was used to investigate failure mechanisms in the rubber hose assembly. Failure examination was performed at every 100 thousands cycles of bending and torsion. Hose samples were sectioned with a diamond-wheel cutter and then polished. The polished surface was observed by optical microscope and scanning electron microscope (SEM). Some interfacial delamination with a length of about 1mm along the interface between EPDM rubber and PVA fabrics was shown at the test cycles of 400,000. The delamination induced some cracking into the outer rubber skin layer to leading the final rupture of the hose.

• Restorative Dentistry and Endodontics
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• v.24 no.1
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• pp.55-66
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• 1999

The purpose of this study was to evaluate the microleakage of 5 current dentin bonding systems which are composed of 2 multi-bottle systems(Scotchbond Multi-Purpose, All Bond2) and 3 one-bottle systems(Single bond, One-Step, Prime & Bond). In this in vitro study, class V cavities were prepared on buccal and lingual surfaces of sixty extracted human premolars and molars on cementum margin. The experimental teeth were randomly divided into six groups of 10 samples (20 surfaces) each, Group 1 : Scotchbond Multi-Purpose ; Group 2 : All Bond 2 ; Group 3 : Single Bond ; Group 4 : One-Step ; Group 5 : Prime & Bond ; Group 6 : no bonding agent(control). The bonding agent and composite resin were applied for each group following the manufacturer's instructions. After 500 thermocycling between $5^{\circ}C$ and $55^{\circ}C$, the 60 teeth were placed in 2% Methylene blue dye for 24 hours, then rinsed with tab water. The specimen were embedded in clear resin, then sectioned buccolingually through the center of restoration with a low speed diamond saw. The dye penetration on each of the specimen were then observed with a stereomicroscope at ${\times}20$. The results of study were statistically analyzed using the Student-Newmann-Keul's Methods and the Mann-Whitney Rank Sum Test. The resin/dentin interfaces were examined under Scanning Electron Microscopy. The results of this study were as follows. 1. None of the dentin bonding systems used in this study showed significant difference in leakage values at both the enamel and the dentin margins (P>0.05). 2. In all groups except the control, leakage value seen at the enamel margin was significantly lower than that seen at the dentin margin (P<0.05). 3. Compared to the control group, all the groups treated with dentin bonding systems showed significantly lower leakage value at both enamel and dentin margins (P<0.05). 4. In the SEM view, gaps were observed in the composite resin / dentin interface in group 6 where no dentin bonding agent was used, and in all the other groups (group 1, 2, 3, 4, 5) composite resin, hybrid layer, and dentin were seen to be closely adhering to each other where there were no leakages. Well-developed resin tags 3~100${\mu}m$ in length infiltrated dentinal tubules past the hybrid layer and a hybrid layer 1~5${\mu}m$ thick had developed between the dentinal surface and the composite resin surface.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1577-1587
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• 1994

TiO2 thin films with the substitution of oxygen with nitrogen were deposited on silicon substrate by metalorganic chemical vapor deposition (MOCVD) using Ti(OCH(CH3)2)4 (titanium tetraisopropoxide, TTIP) and N2O as source materials. X-ray diffraction (XRD) results indicated that the crystal structure of the deposited thin films was anatase TiO2 with only (101) plane observed at the deposition temperatures of 36$0^{\circ}C$ and 38$0^{\circ}C$, and with (101) and (200) plane at above 40$0^{\circ}C$. Raman spectroscopic results indicated that the crystal structure was anatase TiO2 in accordance with the XRD results without any rutile, fcc TiN, or hcp TiN structure. No fundamental difference was observed with temperature increase, but the peak intensity at 194.5 cm-1 increased with strong intensity at 143.0 cm-1 for all samples. The crystalline size of the films varied from 49.2 nm to 63.9 nm with increasing temperature as determined by slow-scan XRD experiments. The refractive index of the films increased from 2.40 to 2.55 as temperature increased. X-ray photoelectron spectroscopy (XPS) study showed only Ti 2s, Ti 2p, C 1s, O 1s and O 2s peaks at the surface of the film. The composition of the surface was estimated to be TiO1.98 from the quatitative analysis. In the bulk of the film Ti 2s, Ti 2p, O 1s, O 2s, N 1s and N 2s were detected, and Ti-N bonding was observed due to the substitution of oxygen with nitrogen. A satellite structure was observed in the Ti 2p due to the Ti-N bonding, and the composition of titanium nitride was determined to be about TiN1.0 from the position of the binding energy of Ti-N 2p3/2 and the quatitative analysis. The spectrum of Ti 2p energy level could be the sum of a 4, 5, or 6 Gaussian curve reconstruction, and the case of the sum of the 6 Gaussian curve reconstruction was physically most meaningful. From the results of Auger electron spectroscopy (AES), it was known that the composition was not varied significantly throughout the whole thickness of the film, and silicon oxide was not observed at the interface between the film and the substrate. The composition of the film was possible (TiO2)1-x.(TiN)x or TiO2-2xNx and in this experimental condition x was found to be about 0.21-0.16.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.169-169
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• 2010

As display industry requires various applications for future display technology, which can guarantees high level of flexibility and transparency on display panel, oxide semiconductor materials are regarded as one of the best candidates. $InGaZnO_4$(IGZO) has gathered much attention as a post-transition metal oxide used in active layer in thin-film transistor. Due to its high mobility fabricated at low temperature fabrication process, which is proper for application to display backplanes and use in flexible and/or transparent electronics. Electrical performance of amorphous oxide semiconductors depends on the resistance of the interface between source/drain metal contact and active layer. It is also affected by sheet resistance on IGZO thin film. Controlling contact/sheet resistance has been a hot issue for improving electrical properties of AOS(Amorphous oxide semiconductor). To overcome this problem, post-annealing has been introduced. In other words, through post-annealing process, saturation mobility, on/off ratio, drain current of the device all increase. In this research, we studied on the relation between device's resistance and post-annealing temperature. So far as many post-annealing effects have been reported, this research especially analyzed the change of electrical properties by increasing post-annealing temperature. We fabricated 6 main samples. After a-IGZO deposition, Samples were post-annealed in 5 different temperatures; as-deposited, $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$. Metal deposition was done on these samples by using Mo through E-beam evaporation. For analysis, three analysis methods were used; IV-characteristics by probe station, surface roughness by AFM, metal oxidation by FE-SEM. Experimental results say that contact resistance increased because of the metal oxidation on metal contact and rough surface of a-IGZO layer. we can suggest some of the possible solutions to overcome resistance effect for the improvement of TFT electrical performances.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.417-417
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• 2016

Global environmental deterioration has become more serious year by year and thus scientific interests in the renewable energy as environmental technology and replacement of fossil fuels have grown exponentially. Photoelectrochemical (PEC) cell consisting of semiconductor photoelectrodes that can harvest light and use this energy directly to split water, also known as photoelectrolysis or solar water splitting, is a promising renewable energy technology to produce hydrogen for uses in the future hydrogen economy. A major advantage of PEC systems is that they involve relatively simple processes steps as compared to many other H2 production systems. Until now, a number of materials including TiO2, WO3, Fe2O3, and BiVO4 were exploited as the photoelectrode. However, the PEC performance of these single absorber materials is limited due to their large charge recombinations in bulk, interface and surface, leading low charge separation/transport efficiencies. Recently, coupling of two materials, e.g., BiVO4/WO3, Fe2O3/WO3 and CuWO4/WO3, to form a type II heterojunction has been demonstrated to be a viable means to improve the PEC performance by enhancing the charge separation and transport efficiencies. In this study, we have prepared a triple-layer heterojunction BiVO4/WO3/SnO2 photoelectrode that shows a comparable PEC performance with previously reported best-performing nanostructured BiVO4/WO3 heterojunction photoelectrode via a facile solution method. Interestingly, we found that the incorporation of SnO2 nanoparticles layer in between WO3 and FTO largely promotes electron transport and thus minimizes interfacial recombination. The impact of the SnO2 interfacial layer was investigated in detail by TEM, hall measurement and electrochemical impedance spectroscopy (EIS) techniques. In addition, our planar-structured triple-layer photoelectrode shows a relatively high transmittance due to its low thickness (~300 nm), which benefits to couple with a solar cell to form a tandem PEC device. The overall PEC performance, especially the photocurrent onset potential (Vonset), were further improved by a reactive-ion etching (RIE) surface etching and electrocatalyst (CoOx) deposition.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.10a
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• pp.15-15
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• 1999

In chip plating, several parameters must be taken into consideration. Current density, solution concentration, pH, solution temperature, components volume, chip and media ratio, barrel geometrical shape were most likely found to have an effect to the process yields. The 3 types of barrels utilized in chip plating industry are the conventional rotating barrel. vibrational barrel (vibarrel), and the centrifugal type. Conventional rotating barrel is a close type and is commonly used. The components inside the barrel are circulated by the barrel's rotation at a horizontal axis. Process yield has known to have higher thickness deviation. The vibrational barrel is an open type which offers a wide exposure to electrolyte resulting to a stable thickness deviation. It rotates in a vertical axis coupled with multi-vibration action to facilitate mixed up and easy transportation of components, The centrifugal barrel has its plated work centrifugally compacted against the cathode ring for superior electrical contact with simultaneous rotary motion. This experiment has determined the effect of barrel vibration intensity to the plating thickness distribution. The procedures carried out in the experiment involved the overall plating process., cleaning, rinse, Nickel plating, Tin-Lead plating. Plating time was adjusted to meet the required specification. All other parameters were maintained constant. Two trials were performed to confirm the consistency of the result. The thickness data of the experiment conducted showed that the average mean value obtained from higher vibrational intensity is nearer to the standard mean. The distribution curve shown has a narrower specification limits and it has a reduced variation around the target value, Generally, intensity control in vi-barrel facilitates mixed up and easy transportation of components, However, it is desirable to maintain an optimum vibration intensity to prevent solution intrusion into the chips' internal electrode. A cathodic reaction can occur in the interface of the external and internal electrode. $2HD{\;}+{\;}e{\;}{\rightarrow}20H{\;}+{\;}H_2$ Hydrogen can penetrate into the body and create pressure which can cause cracks. At high intensity, the chip's motion becomes stronger, its contact between each other is delayed and so plating action is being controlled. However, the strong impact created by its collision can damage the external electrode's structure thereby resulting to bad plating condition. 1 lot of chip was divided into two equal partion. Each portion was loaded to the same barrel one after the other. Nickel plating and tin-lead plating was performed in the same station. Portion A maintained the normal barrel vibration intensity and portion B vibration intensity was increased two steps higher. All other parameters, current, solution condition were maintained constant. Generally, plating method find procedures were carried out in a best way to maintained the best plating condition. After plating, samples were taken out from each portion. molded and polished. Plating thickness was investigated for both. To check consistency of results. 2nd trial was done now using different lot of another characteristics.

• Korean Journal of Remote Sensing
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• v.39 no.3
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• pp.257-268
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• 2023

Sea ice plays an important role in Earth's climate by regulating the amount of solar energy absorbed and controlling the exchange of heat and material across the air-sea interface. Its growth, drift, and melting are monitored on a regular basis by satellite observations. However, low-resolution products with passive microwave radiometer have reduced accuracy during summer to autumn when the ice surface changes rapidly. Synthetic aperture radar (SAR) observations are emerging as a powerful complementary, but previous researches have mainly focused on winter ice. In this study, sea ice drift tracking was evaluated and analyzed using SAR images and tracker with global positioning system (GPS) during late summer-early autumn period when ice surface condition changes a lot. The results showed that observational uncertainty increases compared to winter period, however, the correlation coefficient with GPS measurements was excellent at 0.98, and the performance of the ice tracking algorithm was proportional to the sea ice concentration with a correlation coefficient of 0.59 for ice concentrations above 50%.

• Korean Journal of Ecology and Environment
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• v.39 no.1 s.115
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• pp.1-12
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• 2006

Distributions of water temperature and DO profiles were investigated in Andong Reservoir from 1992 to 2004. Thermal stratification began to form from May of every year. Increasing water temperature of epilimnion, temperature difference between epilimnion and hypolimnion increased until August. Lower oxygen layer was formed at metalimnion from June or July of every year and there were 2 layers depending on each year. The two lower oxygen layers were affected by rainfall and inflow between July and September when thermal stratification was formed. The metalimnetic oxygen minima strongly formed at 2 layers, upper and lower part, when the average rainfall and inflow were ${\geqq}$ 170 mm, ${\geqq}$ 50 $m^3\;sec^{-1}$, respectively. It formed weakly when they were > 400 mm and > 200 $m^3\;sec^{-1}$ for one month. The upper part of low oxygen layers formed on the interface of epilimnion and metalimnion showed larger decreasing rate of DO than temperature and it disappeared around November. The lower part of those farmed on interface of metalimnion and hypolimnion existed until December and disappeared in January, this layer showed larger decreasing rate of temperature than DO. DO increased between the upper and lower part of the low oxygen layers. DO on hypolimnion increased under metalimnion and dramatically decreased near the bottom of the reservoir. Temperature of the inflow during rainy season was similar to that of the reservoir's metalimnion, DO was similar or higher and BOD, COD and SS increased. Density layer caused by turbidity was formed in metalimnion, and turbidity increased under the upper part (oxygen increasing layer) of metalimnetic DO minima layers reaching the maximum at the direct upper part of the lower DO minima layer. The upper part of DO minima layers formed on the interface of epilimnion and metalimnion is related to organic activity on the surface, and the lower part of those was considered to be the result of turbid water inflow to metalimnion during rainy season.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• Journal of the Korea Concrete Institute
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• v.25 no.1
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• pp.3-9
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• 2013

In ultra high strength concrete, when electric arc furnace oxidizing slag is substituted for sea sand as fine aggregate, compressive strength was improved about 15 MPa. To figure out the cause of the improvement in compressive strength, this study considered the dissolution characteristics of Ca component in fine aggregate and examined the microstructure, porosity, microhardness, and Ca/Si mole ratio on the interface of fine aggregate and paste. And to examine the mechanism of strength improvement resulted from the shape of fine aggregate, this study measured the surface roughness of fine aggregate with AFM. According to the result of this experiment, the mechanisms of strength improvement in ultra high strength concrete resulted from the use of electric arc furnace oxidizing slag as fine aggregate can be divided into chemical and physical mechanisms. In the chemical mechanism, the soluble Ca component contained in electric arc furnace oxidizing slag is dissolved and forms a hydrate between fine aggregate and paste to improve the interlocking strength of fine aggregate-paste. Also, it makes the microstructure around the fine aggregate. And in the physical mechanism, electric arc furnace oxidizing slag has a twice greater surface roughness than sea sand, so the interlocking strength between fine aggregate and paste increases, which contributes to the development of compressive strength.