• Journal of the Korean Ceramic Society
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• v.36 no.8
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• pp.863-870
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• 1999

SOI(silicon on insulafor) was fabricated through the direct bonding using (100) Si wafer and 4$^{\circ}$off (100) Si wafer to investigate the stacking faults in silicon at the Si/SiO2 oxidized and bonded interface. The treatment time of wafer surface using MSC-1 solution was varied in order to observe the effect of cleaning on bonding characteristics. As the MSC-1 treating time increased surface hydrophilicity was saturated and surface microroughness increased. A comparison of surface hydrophilicity and microroughness with MSC-1 treating time indicates that optimum surface modified condition for time was immersed in MSC-1 for 2 min. The SOI structure directly bonded using (100) Si wafer and 4$^{\circ}$off (100) Si wafer at the room temperature were annealed at 110$0^{\circ}C$ for 30 min. Then the stacking faults at the bonding and oxidation interface were examined after the debonding. The results show that there were anomalies in the gettering of the stacking faults at the bonded region.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2005.11a
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• pp.75-78
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• 2005

Using a low-energy Ar+ ion-beam with and without reactive gases, polymers such as chemically stable poly(ether ether ketone) (PTFE) and poly(ether ether ketone) (PEEK) films were modified to have special surface features. The adhesion strength between the polymers and the copper was significantly improved because of both changes in the surface topography and chemical interactions due to polymer surface functionalization (oxidation and amination). The surface modification altered the failure mode from adhesive failure for the unmodified polymer/Cu interface to cohesive failure for the surface-modified polymer/Cu layer interface..

• International Journal of Ocean System Engineering
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• v.1 no.3
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• pp.136-143
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• 2011

In this paper, three-dimensional free-surface flows are simulated by using two different numerical methods, the constrained interpolation profile (CIP)-based and finite volume (FV)-based methods. In the CIP-based method, the governing equations are solved on stationary staggered Cartesian grids by a finite difference method, and an immersed boundary technique is applied to deal with wave-body interactions. In the FV-based method, the governing equations are solved by applying collocated finite volume discretization, and body-fitted meshes are used. A free-surface boundary is considered as the interface of the multi-phase flow with air and water, and a volumeof-fluid (VOF) approach is applied to trace the free surface. Among many variations of the VOF-type method, the tangent of hyperbola for interface capturing (THINC) and the compressive interface capturing scheme for arbitrary meshes (CICSAM) techniques are used in the CIP-based method and FV-based method, respectively. Numerical simulations have been carried out for dam-breaking and wave-body interaction problems. The computational results of the two methods are compared with experimental data and their differences are observed.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.13-17
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• 2014

The direct-patternable $SnO_2$ thin film was successfully fabricated by photochemical metal-organic deposition. The composition and chemical bonding state of $SnO_2$ thin film were analyzed by using X-ray photoelectron spectroscopy (XPS) from the surface to the interface with Si substrate. XPS depth profiling analysis allowed the determination of the atomic composition in $SnO_2$ film as a function of depth through the evolution of four elements of C 1s, Si 2p, Sn 3d, and O 1s core level peaks. At the top surface, nearly stoichiometric $SnO_2$ composition (O/Sn ratio is 1.92.) was observed due to surface oxidation but deficiency of oxygen was increased to the interface of patterned $SnO_2/Si$ substrate where the O/Sn ratio was about 1.73~1.75 at the films. This O deficient state of the film may act as an n-type semiconductor and allow $SnO_2$ to be applied as a transparent electrode in optoelectronic applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.128-128
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• 2010

In this study, we investigated the evolution and reduction of the surface roughness during the high-speed chemical dry thinning process of Si wafers. The direct injection of NO gas into the reactor during the supply of F radicals from NF3 remote plasmas was very effective in increasing the Si thinning rate, due to the NO-induced enhancement of the surface reaction, but resulted in the significant roughening of the thinned Si surface. However, the direct addition of Ar and N2 gas, together with NO gas, decreased the root mean square (RMS) surface roughness of the thinned Si wafer significantly. The process regime for the increasing of the thinning rate and concomitant reduction of the surface roughness was extended at higher Ar gas flow rates. In this way, Si wafer thinning rate as high as $20\;{\mu}m/min$ and very smooth surface roughness was obtained and the mechanical damage of silicon wafer was effectively removed. We also measured die fracture strength of thinned Si wafer in order to understand the effect of chemical dry thinning on removal of mechanical damage generated during mechanical grinding. The die fracture strength of the thinned Si wafers was measured using 3-point bending test and compared. The results indicated that chemical dry thinning with reduced surface roughness and removal of mechanical damage increased the die fracture strength of the thinned Si wafer.

• Interaction and multiscale mechanics
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• v.4 no.2
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• pp.165-171
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• 2011

In this study, we proposed a three-dimensional dynamic model under the diffuse interface description for the single crawling cell. From the developed model, we described the clear evolution processes for crawling neutrophil and assessed the reliable quantitative chemotactic property, which confirmed the high possibility of adequate predictions. To establish the system considering of multiple mechanisms such as, diffusion, chemotaxis, and interaction with surface, a diffuse interface model is employed.

• Journal of Magnetics
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• v.16 no.4
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• pp.323-327
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• 2011

By means of Monte Carlo simulation, we investigate the effects of interface roughness and temperature on the exchange bias and coercivity in ferromagnetic (FM)/antiferromagnetic (AFM) bilayers. Both exchange bias and coercivity are strongly dependent on interface roughness. For a perfect uncompensated interface a domain wall is formed in the AFM system during FM reversal, which results in a very small exchange bias. However, a finite interface roughness leads to a finite value of the exchange bias due to the existence of pinned spins at the AFM surface adjacent to the mixed interface. It is observed that the exchange bias decreases with increasing temperature, consistent with the experimental results. It is also observed that a bump in coercivity occurs around the blocking temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.934-937
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. So we need the effect of the substituent group attached to the phthalocyanine on the surface potential was investigated by Kelvin probe method with varying temperature of the substrate. We were obtained the positive shift of the surface potential for CuPc thin film. We observed the electron displacement at the interface between Au electrode and CuPc layer and we were confirmed by the surface potential measurement.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.11a
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• pp.260-266
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• 2001

The surface temperature at the interface of bodies in a sliding contact is one of the most important factors influencing the behavior of machine components. So the calculation of the surface temperature at a sliding contact interface has long been an interesting and important subject for tribologist. Several methods for calculating surface temperature have been devised. Several numerical methods have been used to predict the temperature rise of sliding surface. but those need much time to calculate. In this study to reduce the calculation time the hybrid method using both semi-infinite solid analysis and FVM was used. It is founded that the computing time of hybrid method was shorter than that of FVM.

• Journal of Magnetics
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• v.1 no.1
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• pp.9-13
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• 1996

The effects of surface relaxation on surface and interface magnetism in Fe/Cr (001) are investigated using the highly precise all-electron total-energy full-potential linearized augmented plane wave method. The Fe-Cr interlayer spacing is deter-mined by total-energy calculation and it is found to be relaxed downward by 18%. For the relaxed system, the magnetic moment of surface Fe is highly suppressed to be $1.72\mu_B$compared to the unrelaxed case ($2.39\mu_B$). This reduction of magnetic moment is considered as a result of the enhanced hybridization between Fe-d and Cr-d states, which can be seen from the calculated density of states. This work suggests the importance of effect of relaxation to the surface and interface magnetism in Fe/Cr system.