• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.107-110
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• 2003

We have proposed a model to describe the current-voltage characteristics of fabricated devices using the Biot-Savart's law in order to develop superconducting flux flow transistors, The measured and calculated values, including induced voltage, transresistance and current gain were investigated in relation to the parallel flow of the vortices in a single microbridge. The predictions agreed very well with measured results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.10
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• pp.931-937
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• 2003

The principle of the superconducting vortex flow transistor (SVFT) is based on control of the Abrikosov vortex flowing along a channel. The induced voltage is controlled by a bias current and a control current, instead of external magnetic field. The device is composed of parallel weak links with a nearby current control line. We explained the process to get an I-V characteristic equation and described the method to induce the external and internal magnetic field by the Biot-Savarts law in this paper. The equation can be used to predict the I-V curves for fabricated device. From the equation we demonstrated that the current-voltage characteristics were changed with input parameters. I-V characteristics were simulated to analyze a SVFT with multi-channel by a computer program.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.161-163
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• 2001

We present the basic properties of a superconducting current limiting fuse (SCLF) based on YBCO/Au films. The SCLFs consists of YBCO stripes covered with Au layers for current shunt. Under the source voltage of 100 $V_{rms}$, the longer the duration time of fault current was, the shorter its discharge time was. The duration time of fault current and its discharge time were reduced by increased voltages in the range of 200 - 300 $V_{rms}$. We thought that this was because the quench propagation was limited by local melting generated with higher voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.268-271
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• 2002

The goal of the research is to study and describe a new stressed state of High Temperature Superconducting (High-Tc) YBCO Films, to create of SQUIDs (Superconducting Quantum Interference Device) on the bases of these Films with maximal sensitivity. The experimental investigation of the stressed films grown by laser ablation method and its properties, the fabrication of the dc-SQUIDs with maximal sensitivity on the bases of the stressed YBCO films were carried out. The stressed film having the value of the critical current density $J_{c}=3{\cdot}10^{5}A/cm^{2}$ was the more stable than others.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04a
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• pp.50-54
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• 2002

Influences of bending strain on the critical current ($I_c$) in Ag-sheathed Bi-2223 superconducting tapes at 77K were investigated. The effect of bending mode on the bending strain characteristics was discussed in viewpoints of sample geometry, n-value and damage morphology. Especially, in this paper, we reported the $I_c$ behavior in Ag alloy sheathed Bi-2223 multifilamentary superconducting tapes under hard bending. As a result, $I_c$ degradation behavior of the hard bending appeared remarkably than the case of easy bending, but it did not influence greatly on the n-value.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.94-97
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• 2005

Bismuth high Tc superconducting thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra low growth rate, and sticking processing of the respective elements are evaluated. The sticking processing of bismuth element in bismuth high Tc superconducting thin film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the bismuth phase formation in the co-deposition process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.806-809
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• 2000

A key technology for achieving commercial Nb$_3$Sn superconducting wires may be driven from fabrication Process of big-scale billets. Sub-element billet with diameter of 200 mm was designed and fabricated. This billet was hot-extruded and drawn. Cu stabilizer tube, Nb barrier tube and 19 sub-elements inserted Sn core were composed for strand. There was no breakage in the strand that was constituted with annealed sub-element. It was need that billet had to treat HIP because of remove of voids and goad contact between Cu and Nb filaments. Ta wound sheet was better than Ta tube thor barrier in the strand. Ic of the Nb$_3$Sn wire at 127, 4.2K was over than 120 A.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.198-203
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• 2000

This paper investigated the effects of doping elements on the Bi-Sr-Ca-Cu-O ceramics. The doping elements can be classified into four groups depending on their superconducting characteristics in the Bi-Sr-Ca-Cu-O structure. The first group of doping elements(Co, Fe, Ni and Zn) substitute into the copper site and can reduce the critical temperatures of the 2223 and 2212 phases. The second group of doping elements(Y and La) substitute into the Ca site and cause the disappearance of the 2223 phase and increase the critical temperatures in the 2212 phase. The third group of doping elements(P and K) have a tendency to decompose the superconducting phase and reduce the optimal sintering temperature. The fourth group of doping elements(B, Si, Sn and Ba) almost unaffected the superconductivity of the 2223 and 2212 phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.226-229
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• 2000

We fabricated thin film superconducting fault current limiters based on YBa$_2$Cu$_3$O$_{7}$ thin films and investigated the distribution of quench progress in the limiters. The limiters were tested with simulated fault currents. Quench progress depended significantly on the position in the limiter with respect to electrodes as well as the fault current magnitude. The heat transfer from limiter meander lines to electrodes explains these results.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.250-254
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• 2000

High temperature superconducting films deposited on metal Ag wire were prepared with YBCO powders by electrophoretic deposition method. $I_2$was used as additives for surface charge of YBCO particles. When 2~3 wt.% $BaF_2$ was added in the YBCO suspension, the pores and cracks of film surface were decreased and film density could be increased. In case of YBCO films, the critical current density ($J_{c}$) was calculated at the value of $1458{\;}A/\textrm{cm}^2$ (77K, 0K) by 4 point prove method.