• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.131-136
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• 2008

Two Ka-band 3-stage power amplifiers were designed and fabricated using $0.18-{\mu}m$ CMOS technology. For low loss matching networks for the amplifiers, two substrate-shielded transmission line structures, having good modeling accuracy up to 40 GHz were used. The measured insertion loss of substrate-shielded microstrip-line (MSL) was 0.5 dB/mm at 27 GHz. A 3-stage CMOS amplifier using substrate-shielded MSL achieved a 14.7-dB small-signal gain and a 14.5-dBm output power at 27 GHz in a compact chip area of 0.83$mm^2$. The measured insertion loss of substrate-shielded coplanar waveguide (CPW) was 1.0 dB/mm at 27 GHz. A 3-stage amplifier using substrate-shielded CPW achieved a 12-dB small-signal gai and a 12.5-dBm output power at 26.5 GHz. This results shows a potential of CMOS technology for low cost short-range wireless communication components and system.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.2
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• pp.53-59
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• 1994

The characteristics of the shielded suspended substrate strip transmission line(SSSL) are analyzed by the point matching method and the variational method in Quasi-TEM mode. The accuracy of this solution is confirmed by analyzing and comparing this solution with the empirical solution obtained from the same dimension. The characteristic impedance and the effective dielectric constant are also studied by increasing the air-layer height of SSSL.