• 제목/요약/키워드: substrate resistance

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차세대 웨어러블 디바이스를 위한 높은 기계적/전기적 특성을 갖는 CNT-Ni-Fabric 유연기판 (CNT-Ni-Fabric Flexible Substrate with High Mechanical and Electrical Properties for Next-generation Wearable Devices)

  • 김형구;노호균;차안나;이민정;하준석
    • 마이크로전자및패키징학회지
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    • 제27권2호
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    • pp.39-44
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    • 2020
  • 최근 웨어러블 장치에 적용하기 위한 유연성 기판에 대한 연구가 활발히 진행되고 있다. 특히, 유연성 기판 중 의복에 웨어러블 장치를 적용하기 위한 전도성 섬유기판에 대한 연구가 진행되고 있다. 본 연구에서는, 면섬유 기판 표면에 CNT와 Pd복합 용액을 스프레이 법을 이용하여 형성하였고, 무전해 도금법을 이용하여 금속층을 도금하였다. 도금된 섬유기판의 형상을 분석하기 위하여 SEM 장비를 이용하였고, CNT를 증착한 섬유기판의 표면에 Ni 레이어가 형성된 것을 확인하였다. EDS 분석을 통하여 섬유기판의 표면에 형성된 물질이 Ni임을 알 수 있었다. 전기적 특성을 확인하기 위하여 4-point probe로 무전해 도금을 진행한 섬유기판의 표면저항 및 저항 분포를 확인하기 위한 맵핑을 진행하였다. 무전해 도금의 진행 시간이 길어질수록 전도성이 향상되었음을 확인할 수 있었고, 표면 위치 별 저항의 분포가 균일함을 알 수 있었다. 인장력, 굽힘, 뒤틀림 시험을 통하여 기계적 스트레스로 인한 저항변화를 측정하였다. 그 결과 도금 시간이 길어질수록 유연성 기판의 저항변화가 점점 사라지는 것을 확인하였다. UTM(Universal testing machine)을 이용하여 도금시간 변화에 대한 무전해 도금 기판의 기계적 특성 향상 여부에 대하여 분석하였다. 인장강도는 무전해 도금을 2 시간 동안 진행한 전도성 섬유기판의 경우, 면섬유 기판보다 약 16 MPa 증가하였다. 이러한 결과들을 토대로 Ni-CNT-Fabric 유연기판은 의류 일체형 전도성 기판으로 이용되기에 충분함을 확인하였고, 이러한 연구 결과는 유연기판, 웨어러블 디바이스뿐만 아니라 유연성이 필요한 배터리, 촉매, 태양전지 등에 적용되어 발전에 기여할 수 있을 것으로 기대한다.

화학적 기상 반응법에 의한 탄화규소 피복 흑연의 제조 (I) (Fabrication of SiC Converted Graphite by Chemical Vapor Reaction Method)

  • 윤영훈;최성철
    • 한국세라믹학회지
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    • 제34권12호
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    • pp.1199-1204
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    • 1997
  • SiC conversion layer was fabricated by the chemical vapor reaction between graphite substrate and silica powder. The CVR process was carried out in nitrogen atmosphere at 175$0^{\circ}C$ and 185$0^{\circ}C$. From the reduction of silica powder with graphite substrate, the SiO vapor was created, infiltrated into the graphite substrate, then, the SiC conversion layer was formed from the vapor-solid reaction of SiO and graphite. In the XRD pattern of conversion layer, it was confirmed that 3C $\beta$-SiC phase was created at 175$0^{\circ}C$ and 185$0^{\circ}C$. Also, in the back scattered image of cross-sectional conversion layer, it was found that the conversion layer was easily formed at 185$0^{\circ}C$, the interface of graphite substrate and SiC layer was observed. It was though that the coke particle size and density of graphite substrate mainly affect the XRD pattern and microstructure of SiC conversion layer. In the oxidation test of 100$0^{\circ}C$, the SiC converted graphites exhibited good oxidation resistance compared with the unconverted graphites.

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해양환경 중에서 Cu-Ni 용사피복재의 침식-부식에 관한 연구 (A Study on the Erosion-Corrosion of Sprayed Cu-Ni Alloy Coating in the Marine Environment)

  • 이상열;임우조;윤병두
    • 수산해양교육연구
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    • 제10권1호
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    • pp.69-78
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    • 1998
  • Thermal sprayed Cu-Ni alloy coating on the carbon steel was carried out impingement erosion-corrosion test and electrochemical corrosion test in the marine environment. The impingement erosion-corrosion behavior and electrochemical corrosion characteristics of substrate(SS400) and thermal sprayed Cu-Ni coating was investigated, and the corrosion control efficiency of Cu-Ni coating to substrate was estimated quantitatively. Main results obtained are as follows : 1) The weight loss rate of Cu-Ni coating layer by the impingement erosion-corrosion compared with substrate was smaller in high specific resistance solution than in low specific resistance solution. 2) The corrosion potential of Cu-Ni coating layer spray coating in the marine environment became more noble than that of substrate. 3) With the lapse of time, corrosion current density of Cu-Ni coating layer became stable, but that of substrate was increased. 4) As the corrosion control efficiency of Cu-Ni coating layer in the marine environment was over 90%, its anti-corrosion characteristics was excellent.

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Macroscopic Wear Behavior of C/C and C/C-SiC Composites Coated with Hafnium Carbide

  • Lee, Kee Sung;Sihn, Ihn Cheol;Lim, Byung-Joo;Lim, Kwang Hyun
    • 한국세라믹학회지
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    • 제52권6호
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    • pp.429-434
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    • 2015
  • This study investigates the macroscopic wear behaviors of C/C and C/C-SiC composites coated with hafnium carbide (HfC). To improve the wear resistance of C/C composites, low-pressure chemical vapor deposition (LPCVD) was used to obtain HfC coating. The CVD coatings were deposited at various deposition temperatures of 1300, 1400, and $1500^{\circ}C$. The effect of the substrate material (the C/C substrate, the C/C-CVR substrate, or the C/C-SiC substrate deposited by LSI) was also studied to improve the wear resistance. The experiment used the ball-on-disk method, with a tungsten carbide (WC) ball utilized as an indenter to evaluate the wear behavior. The HfC coatings were found to effectively improve the wear resistance of C/C and C/C-SiC composites, compared with the case of a non-coated C/C composite. The former showed lower friction coefficients and almost no wear loss during the wear test because of the presence of hard coatings. The wear scar width was relatively narrower for the C/C and C/C-SiC composites with hafnium coatings. Wear behavior was found to critically depend on the deposition temperature and the material. Thus, the HfC-coated C/C-SiC composites fabricated at deposition temperatures of $1500^{\circ}C$ showed the best wear resistance, a lower friction coefficient, and almost no loss during the wear test.

$SnO_2$ 수용전극특성에 미치는 Sb첨가의 영향 (Effects of Sb doping on the Characteristis of $SnO_2$ Transparent Electrodes)

  • 이정한
    • 대한전자공학회논문지
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    • 제13권3호
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    • pp.16-21
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    • 1976
  • 염화제이석을 출발물질로 하여 예열을 병용한 광무부착방식으로 유리 박판 위에 SnOf수명전극을 형성시켜 그의 Sheet 무항과 광투과률에 미치는 Sb연가량와 영향을 실행적으로 검토하였다. Sheet 저항을 전극작성시의 기판유리의 표면 온도가 높을수록 낮아지며 백색광에 대한 투과률을 Sheet 저항저하와 더불어 증가되는데 최대 약 93{%)였다. 기판표면온도는 700(℃) 부근이 적당하며 같은 표이온도의 경우 출발물질에서의 Sb/Sn의 비율이 약 0.6(%)일 경우 최저의 저항치를 얻을 수 있었다. Transparent eloctroaes of polycrystalline till-oxide films doped with antimony are prepared on the substrate of microscopic cover g1ass by modified spray method and from SnCl4 Solution. Their electrical and optical properties are investigated in relation to the surface temperature of the substrate glass and to antimony concentration in the starting materials. The sheet·resiststrace of the film electrodes and transmittance for incandescent light depen on tile antimony concentration and surface temperature of substrates at the time of making films. The transmittance increases with decrease of sheet resistance of the film. The optimum sheet·resistance was obtianed in the case of the antimony concentration 0.6(%) approximately , and the max. transmittance was 93(%).

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Characterization of EFG Si Solar Cells

  • 박세훈
    • 센서학회지
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    • 제5권5호
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    • pp.1-10
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    • 1996
  • EFG Si 태양전지를 전류-전압, 표면광전압, 전자빔유도_전류, 전자미세프로브, 전자역산란의 여러 가지 기술을 이용하여 분석하였다. 전류-전압 그래프를 여러 온도에서 측정한 결과 EFG-Si 태양전지는 전압에 따라 변하는 shunt 저항을 가진 것이 밝혀졌다. 이러한 shunt 저항은 precipitate와 grain boundary에 의해 생긴 것으로 공간전하영역 내의 불순물 에너지 준위로 tunneling에 의해 이동한 캐리어의 재결합으로 일어난 결과이다. 전류-전압 과 표면광전압 기술을 결합하면 태양전지의 pn접합과 기판 (substrate)을 동시에 분석할 수 있다. Diode ideality factor와 표면 광전압은 Pn접합의 특성을, 소수캐리어 확산거리는 substrate특성을 표시한다. EFG 태양 전지를 분석한 결과, 전압에 따라 변하는 shunt 저항은 효율에 따라 정도 차이는 있지만 모든 시편에서 발견되며, 태양전지의 성능을 저하시키는 중요한 원인 중의 하나가 된다.

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Pd 삽입 니켈모노실리사이드의 물성과 미세구조 변화 (Property and Microstructure Evaluation of Pd-inserted Nickel Monosilicides)

  • 윤기정;송오성
    • 대한금속재료학회지
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    • 제46권2호
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    • pp.69-79
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    • 2008
  • A composition consisting of 10 nm-Ni/1 nm-Pd/(30 nm or 70 nm-poly)Si was thermally annealed using rapid thermal for 40 seconds at $300{\sim}1100^{\circ}C$ to improve the thermal stability of conventional nickel monosilicide. The annealed bilayer structure developed into $Ni(Pd)Si_x$, and the resulting changes in sheet resistance, microstructure, phase, chemical composition, and surface roughness were investigated. The silicide, which formed on single crystal silicon, could defer the transformation of $NiSi_2$, and was stable at temperatures up to $1100^{\circ}C$. It remained unchanged on polysilicon substrate compared with the sheet resistance of conventional nickel silicide. The silicides annealed at $700^{\circ}C$, formed on single crystal silicon and 30 nm polysilicon substrates exhibited 30 nm-thick uniform silicide layers. However, silicide annealed at $1,000^{\circ}C$ showed preferred and agglomerated phase. The high resistance was due to the agglomerated and mixed microstructures. Through X-ray diffraction analysis, the silicide formed on single crystal silicon and 30 nm polysilicon substrate, showed NiSi phase on the entire temperature range and mixed phases of NiSi and $NiSi_2$ on 70 nm polysilicon substrate. Through scanning probe microscope (SPM) analysis, we confirmed that the surface roughness increased abruptly until 36 nm on 30 nm polysilicon substrate while not changed on single crystal and 70 nm polysilicon substrates. The Pd-inserted nickel monosilicide could maintain low resistance in a wide temperature range and is considered suitable for nano-thick silicide processing.

폴리이미드 기판에 극저온 Catalytic-CVD로 제조된 니켈실리사이드와 실리콘 나노박막 (Nano-thick Nickel Silicide and Polycrystalline Silicon on Polyimide Substrate with Extremely Low Temperature Catalytic CVD)

  • 송오성;최용윤;한정조;김건일
    • 대한금속재료학회지
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    • 제49권4호
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    • pp.321-328
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    • 2011
  • The 30 nm-thick Ni layers was deposited on a flexible polyimide substrate with an e-beam evaporation. Subsequently, we deposited a Si layer using a catalytic CVD (Cat-CVD) in a hydride amorphous silicon (${\alpha}$-Si:H) process of $T_{s}=180^{\circ}C$ with varying thicknesses of 55, 75, 145, and 220 nm. The sheet resistance, phase, degree of the crystallization, microstructure, composition, and surface roughness were measured by a four-point probe, HRXRD, micro-Raman spectroscopy, FE-SEM, TEM, AES, and SPM. We confirmed that our newly proposed Cat-CVD process simultaneously formed both NiSi and crystallized Si without additional annealing. The NiSi showed low sheet resistance of < $13{\Omega}$□, while carbon (C) diffused from the substrate led the resistance fluctuation with silicon deposition thickness. HRXRD and micro-Raman analysis also supported the existence of NiSi and crystallized (>66%) Si layers. TEM analysis showed uniform NiSi and silicon layers, and the thickness of the NiSi increased as Si deposition time increased. Based on the AES depth profiling, we confirmed that the carbon from the polyimide substrate diffused into the NiSi and Si layers during the Cat-CVD, which caused a pile-up of C at the interface. This carbon diffusion might lessen NiSi formation and increase the resistance of the NiSi.

MBR에서 F/M비가 EPS 생성 및 fouling에 미치는 영향 (Effects of F/M ratio on the EPS production and fouling at MBR)

  • 김윤지;최윤정;황선진
    • 상하수도학회지
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    • 제35권3호
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    • pp.197-204
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    • 2021
  • In MBR, extracellular polymeric substance (EPS) is known as an important factor of fouling; soluble EPS (sEPS) affects internal contamination of membrane, and bound EPS (bEPS) affects the formation of the cake layer. The production of EPS changes according to the composition of influent, which affects fouling characteristics. Therefore, in this study, the effects of the F/M ratio on the sEPS concentration, bEPS content, and fouling were evaluated. The effects of F/M ratio on the amount and composition of EPS were confirmed by setting conditions that were very low or higher than the general F/M ratio of MBR, and the fouling occurrence characteristics were evaluated by filtration resistance distribution. As a result, it was found that the sEPS increased significantly with the increase of the F/M ratio. When the substrate was depleted, bEPS content decreased because bEPS was hydrolyzed into BAP and seemed to be used as a substrate. In contrast, when the substrate is sufficient, UAP (utilization-associated products) was rapidly generated in proportion with the consumption of the substrate. UAP has a relatively higher Protein/Carbohydrate ratio (P/C ratio) than BAP, and this means, it has a higher adhesive force to the membrane surface. As a result, UAP seems like causing fouling rather than BAP (biomass-associated products). Therefore, Rf (Resistance of internal contamination) increased rapidly with the increase of UAP, and Rc (Resistance of cake layer) increased with the accumulation of bEPS in proportion, and as a result, the fouling interval was shortened. According to this study, a high F/M ratio leads to an increment in UAP generation and accumulation of bEPS, and by these UAP and bEPS, membrane fouling is promoted.

이미드 곁가지로 가교되는 폴리설폰의 합성 및 필름 특성 (Synthesis and Film Properties of Cross-linked Polysulfone with Imide Side Chain)

  • 이은상;홍성권;김용석;이재흥;김인선;원종찬
    • 폴리머
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    • 제30권2호
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    • pp.140-145
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    • 2006
  • 디스플레이용 기판으로 사용하고 있는 유리기판은 무겁고 깨지기 쉬우므로 이를 폴리설폰, 폴리에테르설폰, 폴리카보네이트, 폴리에틸렌테레프탈레이트 환상형 올레핀 고분자 등의 플라스틱으로 대체하는 연구가 많이 이루어지고 있다. 플라스틱 기판은 가볍고, 내충격성이 뛰어나며, 유연하고 연속가공이 가능한 장점을 가지고 있다. 그러나 여러 유기용매에 녹는 특성을 가지고 있다. 디스플레이 제조 공정에서는 여러 유기용매에 노출되므로 이에 대한 내화학성이 필요하다. 그러므로 본 연구에서는 폴리설폰에 곁가지로 이미드 가교기를 도입하여 내화학성을 향상시키는 연구를 하였다. 곁사슬기에 의해 가교된 폴리설폰 필름은 용해도 조사 결과 내화학성이 향상되었음을 확인할 수 있었다. 내화학성 측정 결과 MeOH, THF, DMSO, NMP 등의 유기용매에 불용성을 보였다. 또한 15% 이상 낮은 열팽창계수를 보여 열에 대한 치수안정성이 개선되었으며 유리 전이 온도도 이미드기의 도입에 따라 $180^{\circ}C$ 에서 $252^{\circ}C$ 로 증가하였다. 이와 같이 제조한 이미드 곁가지로 가교된 폴리설폰은 광학적 특성이 우수하면서도 내화학성이 뛰어나 유연성 플라스틱 기판으로 사용이 가능하다.