• Korean Journal of Materials Research
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• v.4 no.2
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• pp.166-176
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• 1994

Ni base superalloys are composed of solid sohltion hardening elements(Co, Cr. Mo. W and so on) and $\gamma '$ precipitation hardening elements(A1, Ti, Nb, Ta and so on). To Improve the mechanical properties and oxidation resistanre of superalloys, rare earth elements(%r, Hf, Y and so on) are added to the inner substrate, or are used as coating materials. Their pffects on the growth rate and adhes~on of oxide are changed according to the kinds of oxides such as $AI_2O_3$ and $Cr_2O_3$. The effect of yttrium on the oxidation rate, grain size of oxide, internal structure, and crack resistance was investigated for two kinds of Ni-base superalloys. One in AF'115 superalloy containing Hf and the other is MA6000 superalloy containing $Y_2O_3$. They werr owid~zed at high temperature after yttrium surface modification using ion coater. Yttrium coating on the AF115 and MA6000 superalloys results in a marked change in the growth of the inner oxide. For AF115 superalloy, the degree of gram boundary segregation of $Cr_2O_3$, and prefer en^ tial oxidation of Hf are decreased, and the shape of inner oxidation layer was changed from triangle to plate type. For MA6000 superalloy, $Cr_2O_3$ oxide scale was transformed as outer oxidation layer of CrZOI and inner oxidation layer of $Cr_2O_3$.

• Korean Journal of Materials Research
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• v.16 no.4
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• pp.225-230
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• 2006

Nanoimprint lithography (NIL) is a novel method of fabricating nanometer scale patterns. It is a simple process with low cost, high throughput and resolution. NIL creates patterns by mechanical deformation of an imprint resist and physical contact process. The imprint resist is typically a monomer or polymer formulation that is cured by heat or UV light during the imprinting process. Stiction between the resist and the stamp is resulted from this physical contact process. Stiction issue is more important in the stamps including narrow pattern size and wide area. Therefore, the antistiction layer coating is very effective to prevent this problem and ensure successful NIL. In this paper, an antistiction layer was deposited and characterized by PECVD (plasma enhanced chemical vapor deposition) method for metal stamps. Deposition rates of an antistiction layer on Si and Ni substrates were in proportion to deposited time and 3.4 nm/min and 2.5 nm/min, respectively. A 50 nm thick antistiction layer showed 90% relative transmittance at 365 nm wavelength. Contact angle result showed good hydrophobicity over 105 degree. $CF_2$ and $CF_3$ peaks were founded in ATR-FTIR analysis. The thicknesses and the contact angle of a 50 nm thick antistiction film were slightly changed during chemical resistance test using acetone and sulfuric acid. To evaluate the deposited antistiction layer, a 50 nm thick film was coated on a stainless steel stamp made by wet etching process. A PMMA substrate was successfully imprinting without pattern degradations by the stainless steel stamp with an antistiction layer. The test result shows that antistiction layer coating is very effective for NIL.

• Korean Journal of Materials Research
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• v.10 no.6
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• pp.437-444
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• 2000

We investigated the effect of substrate temperature, chemical composition and post-deposition heat-treatment on the crystal structure and electrical transport of $La_{1-x}Sr_xMnO_{3-{\delta}}$(0.19${\leq}x{\leq}$0.31) thin films. As-prepared $La_{1-x}Sr_xMnO_{3-{\delta}}$ films grown at $500^{\circ}C$ by sputter techniques were found to have the pseudo-tetragonal system(a/c=0.97) and a highly preferential <001> orientation. The films were changed to be of the cubic system by post-deposition annealing at around $900^{\circ}C$. A main target of $La_{0.67}Sr_{0.33}MnO_3$ as well as auxliary targets of $La_{0.3}Sr_{0.7}MnO_3$ ceramics were co-sputtered to control the chemical composition of the film. The Sr content(x) of the film ranged from 0.19 to 0.31, depending on the number of the auxiliary target. When x increased from 0.19 to 0.31, the electrical resistivity of the film decreased and the transition temperature between metal and semiconductor shifted to higher temperature. With a magnetic field of 0.18 T, the magneto-resistance ratio (MR(%) = (${\rho}_o-{\rho}_H/{\rho}_H$) of the $La_{0.69}Sr_{0.31}MnO_3$ thin film was about 390%.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.115-115
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• 2018

철강재는 대량 생산이 가능하며 경제성이 뛰어나고 기계적 성질도 우수하므로 다양한 산업 분야에서 널리 사용되고 있다. 그러나 철강재는 부식 환경에 취약하기 때문에 그 용도에 따라 다양한 내식성을 부여하는 표면처리를 적용하고 있다. 일반적으로 이러한 철강 재료에 대한 내식성 표면처리로는 습식공정을 이용한 아연(Zn)도금 표면처리가 널리 적용되고 있다. 그러나 최근에는 이러한 습식공정으로 인해 발생하는 자원소모 및 환경적인 문제와 더불어 고내식성 표면처리 소재에 대한 수요가 증가함에 따라 이러한 단점을 극복할 수 있는 새로운 소재 및 기술 개발에 대한 관심이 증대되고 있다. 이러한 관점에서 기존의 습식표면처리 공정을 건식으로 대체 또는 병행하고, 현행 아연소재를 대체할 수 있는 코팅소재로써 알루미늄(Al) 이나 마그네슘(Mg)으로 대체하는 방법이 시도되고 있다. 본 연구에서는 강판의 내식성을 향상시키기 위한 방법으로 기존의 습식 표면처리 공정에서 용이하지 않은 마그네슘을 이용하여 건식 PVD 프로세스에 의해 코팅막의 제작을 시도하였다. 그리고 코팅막 제작 조건 중에서 공정압력이 코팅막의 결정배향성에 미치는 영향과 내식성과의 상관관계를 규명하고자 하였다. 즉, 여기서는 강판 및 용융알루미늄 도금강판 상에 스퍼터링법에 의해 Ar 가스에 의한 공정압력을 2, 10 및 50 mTorr로 조절하면서 마그네슘 코팅막을 $2{\mu}m$ 두께로 각각 제작하였다. 이때 제작한 막의 표면 모폴로지 관찰(SEM) 및 결정구조 분석(XRD) 결과에 의하면, 강판 및 용융알루미늄도금강판 상에 제작한 코팅막들은 공통적으로 공정압력이 증가할수록 그모폴로지의 결정립의 크기가 작고 치밀한 구조로 변하였다. 또한 그때 형성된 코팅막의 결정구조는 표면에너지가 상대적으로 높은 Mg(002)면 피크의 점유율이 감소하고 표면에너지가 낮은 Mg(101)면 피크의 점유율이 증가하는 경향을 나타내었다. 그리고 공정압력이 증가할수록 Mg 격자 간 면 간격(d-value)이 증가하는 경향을 나타내었다. 이상에서 제작한 마그네슘 코팅막의 결정성장 과정은 본 진공 플라즈마 PVD 공정중 증착가 더불어 흡착역할을 하는 Ar의 움직임에 따라 설명 가능하였다[1,2]. 코팅막의 양극분극(Polarization)측정 결과에 의하면, 공정압력이 높은 조건에서 제작한 막일수록 부동태 특성이 우수하여 내식성이 향상되는 경향을 나타내었다. 특히, 공정압력이 상대적으로 높은 50 mTorr 조건에서 제작된 코팅막이 표면 마그네슘 결정의 크기가 조밀하고 결정구조는 Mg(002)면과 Mg(101)면의 상대강도 비가 유사하여 내식성 가장 우수하였다.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.115-123
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• 1999

A micro-gas sensor with heater and sensing electrode on the same plane was fabricated on phosphosilicate glass(PSG, 800nm)/$Si_3N_4$ (150nm) dielectric membrane. PSG film was provided by atmospheric pressure chemical vapor deposition(APCVD), and $Si_3N_4$ film by low pressure chemical vapor deposition (LPCVD). Total area of the fabricated device was $3.78{\times}3.78mm^2$. The area of diaphragm was $1.5{\times}1.5mm^2$, and that of the sensing layer was $0.24{\times}0.24mm^2$. Finite-element simulation was employed to estimate temperature distribution for a square-shaped diaphragm. The power consumption of Pt heater was about 85mW at $350^{\circ}C$. Tin thin films were deposited on the silicon substrate by thermal evaporation at room temperature and $232^{\circ}C$, and tin oxide films($SnO_2$) were prepared by thermal oxidation of the metallic tin films at $650^{\circ}C$ for 3 hours in oxygen ambient. The film analyses were carried out by SEM and XRD techniques. Effects of humidity and ambient temperature on the resistance of the sensing layer were found to be negligible. The fabricated micro-gas sensor exhibited high sensitivity to butane gas.

• Applied Chemistry for Engineering
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• v.9 no.4
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• pp.491-496
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• 1998

The composition of isocyanates and polyols influence prepolymeric properties of adhesive and calking sealant based on polyurethanes (PU). One component moisture curing prepolymers, which reacted with surface humidity of substrate, were synthesized in several kinds of composition. Reactivity, structural change and properties of the prepolymers were studied as a preliminary step to manufacture PU based adhesive and sealant. To study the effects of mole ratio ([NCO]/[OH]), we used toluene diisocyanate (TDI), 4, 4'-diphenylmethane diisocyanate (MDI), and ether-polyols such as PTMG and PPG which have good resistance to hydrolysis and excellent low-temperature properties. The each prepolymers could be prepared in different molecular weight without any significant structural change. The mole ratio 1.78 of [NCO] to [OH] showed the fastest reactivity. It was confirmed that effect of polyols was larger than that of isocyanates on the prepolymer in reactivity. Several kinds of compounds were manufactured with each prepolymer, and tensile and properties were tested. And the optimum quantity of curing accelerator for the PU was 0.05~0.1%. In the tensile test, TDI based PU was superior to MDI based PU, and also PTMG based PU was superior PPG based PU.

• Membrane Journal
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• v.6 no.3
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• pp.173-181
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• 1996

Common volatile organic compounds(VOCs) such as toluene and methanol were removed successfully from N$_{2}$ using a novel silicone-coated hollow fiber membrane module. This novel membrane is a thin film composite(TFC) and was highly efficient in removing VOCs selectively from a N$_{2}$ stream. This membrane had some innate advantages over other silicone-based membrane in that the selective barrier was ultrathin(~1 $\mu$m) and the porosity of the polypropylene substrate was high which leads to a low permeation resistance. The substram was very strongly bonded to the coating layer by plasma polymerization and can withstand a very high pressure. A small hollow fiber module having a length of 25cm and 50 fibers could remove 96~99% of toluene as well as methanol vapors when the feed flow rate was up to 60cc/min. The percent removal of VOCs were even higher when the feed inlet concentration was higher. This process is especially suitable for treating streams having a low flow rate and high VOCs concentration. The permeances of VOCs through this membrane was in the range of $4~30 \times 10^{-9}gmol/sec \cdot cm^{2}\cdot cmHg$ for both toluene and methanol, and nitrogen permeance was between $3~9 \times 10^{-10}gmol/sec \cdot cm^{2} \cdot cmHg$. High separation factor between 10~55 for toluene/N$_{2}$ and 15~125 for methanol/N$_{2}$ were obtained depending on the feed flow rate ranges and feed VOCs concentration levels.

• Korean Journal of Materials Research
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• v.18 no.6
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• pp.339-346
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• 2008

Single-crystal $ZnIn_2S_4$ layers were grown on a thoroughly etched semi-insulating GaAs (100) substrate at $450^{\circ}C$ with a hot wall epitaxy (HWE) system by evaporating a $ZnIn_2S_4$ source at $610^{\circ}C$. The crystalline structures of the single-crystal thin films were investigated via the photoluminescence (PL) and Double-crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by Varshni's relationship, $E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T2/(T＋489K)$. After the as-grown $ZnIn_2S_4$ single-crystal thin films was annealed in Zn-, S-, and In-atmospheres, the origin-of-point defects of the $ZnIn_2S_4$ single-crystal thin films were investigated via the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_S$, $Zn_{int}$, and $S_{int}$ obtained from the PL measurements were classified as donor or acceptor types. Additionally, it was concluded that a heat treatment in an S-atmosphere converted $ZnIn_2S_4$ single crystal thin films into optical p-type films. Moreover, it was confirmed that In in $ZnIn_2S_4$/GaAs did not form a native defects, as In in $ZnIn_2S_4$ single-crystal thin films existed in the form of stable bonds.

• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1182-1189
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• 1998

High quality $TiN/TiSi_2$-bilayers were formed on the Si(100) substrate at room temperature and at $600^{\circ}C$ first by coevaporation of stoichiometric Si and Ti(Si:Ti = 2:1) fellowed by Ti reactive deposition in N, gas ambient, and in situ annealing in ultrahigh vacuum. Stoichiometric $Ti_{0.}N_{0.5}$, films with (111) texture and $C54-TiSi_2$ films were grown by annealing at temperatures above $700^{\circ}C$. $TiN/C54-TiSi_2$/Si(100) interface was clear and flat without agglomoration, and $CS4-TiSi_2$ film was epitxailly grown. The sheet resistance of the $TiN/TiSi_2$- bilayer decreased as the annealing temperature increased and about $2.5\omega/\textrm{cm}^2$ was obtained from the sample annealed over $700^{\circ}C$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.110-110
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• 2016

금속재료 중 철강은 기계적 성질이 우수하고 대량생산에 의한 뛰어난 경제성을 가지기 때문에 다양한 산업 분야에서 널리 사용되고 있다. 그러나 스테인리스강 등과 같은 일부 특수한 용도의 강을 제외하고는 부식 환경에 취약하기 때문에 그 용도에 따라 표면처리를 함으로서 내식특성을 부여하고 있다. 일반적으로 이러한 철강재료에 대한 부식문제를 해결하기 위한 방법으로는 습식프로세스 중 아연(Zn)도금이 사용되는데, 아연은 그 자체가 보유하고 있는 차폐(barrier)효과는 물론 상대적으로 이온화 경향이 크기 때문에 철에 대하여 전자를 공급하는 희생양극적(Sacrificial anode)역할을 하여 철을 방식하는 원리를 가지고 있다. 하지만 최근에 이르러 기존의 도금 프로세스 처리된 제품의 사용 및 적용분야가 확대되고 가혹해 짐에 따라서 내식성 향상을 위한 새로운 재료 및 신기술 개발이 요구되고 있는 실정이다. 본 연구에서는 친환경 프로세스 방법인 PVD법 중 하나인 스퍼터링(Sputtering)을 이용하여 0.8mm 두께의 냉연강판 (cold rolled steel) 상에 Al에 대한 Mg 함량을 10~30wt.%로 하여 약 $5{\mu}m$ 두께의 막을 제작하였다. 이때 20wt.% 막의 경우 공정압력조건을 증가시켜 증착 막의 결정배향성을 변화시켰다. 뿐만 아니라 제작된 막들에 대해서 $400^{\circ}C$온도에서 10분간 열처리함으로서 코팅막의 성분변화에 따른 영향을 살펴보기 위해 시편을 추가 제작하였다. 이와 같이 제작된 막들에 대한 형성메커니즘과 내식성의 상관관계 해명을 위해 막의 조성분포, 표면 및 단면의 모폴로지 관찰 및 결정구조 등 재료특성분석과 더불어 염수분무(Salt spray test), 침지시험 그리고 양극분극 시험 등을 통해 내식성 평가를 진행하였다. 이상의 종합적인 결과를 살펴보면 제작된 Al-Mg 막은 마그네슘 함량비 및 열처리 조건에 따라 조성분포와 막의 모폴로지 및 결정배향성이 변화한다는 것을 알 수 있었는데, 마그네슘 함량이 증가하고 열처리한 막의 내식성이 가장 양호한 것으로 나타났다. 이것은 Al-Mg 성분이 표면을 중심으로 균일 분산-분포하며, Al에 대한 Mg의 고용으로 인해 안정적으로 형성된 부식생성물과 금속화합물의 단계적 반응 효과에 의해 차폐효과와 희생양극적 특성이 동시에 향상되었기 때문으로 생각된다. 한편 공정 압력을 증가시켜 형성한 막은 결정학적 구조에서 보다 높은 표면 에너지와 증가한 격자 정수에 의해 Mg이 부식환경에서 빠르게 반응하여 안정적 피막을 형성하기 때문에 내식성이 향상된 것으로 보여 진다. 이상의 연구를 통해서 고내식성을 Al-Mg막의 유효성 확인하였으며, 설계에 대한 기초적인 응용지침을 제시할 수 있을 것으로 사료된다.