• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.2
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• pp.70-77
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• 2007

The application of focused ion beam(FIB) technology has been broadened in the fabrication of nanoscale regime. The extended application of FIB is dependent on complicated reciprocal relation of operating parameters. It is necessary for successful and efficient modifications on the surface of silicon substrate. The primary effect by Gaussian beam intensity is significantly shown from various aperture size, accelerating voltage, and beam current. Also, the secondary effect of other process factors - dwell time, pixel interval, scan mode, and pattern size has affected to etching results. For the process analysis, influence of the secondary factors on FIB micromilling process is examined with respect to sputtering depth during the milling process in silicon material. The results are analyzed by the ratio of signal to noise obtained using design of experiment in each parameter.

• 한국정보통신설비학회:학술대회논문집
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• 2007.08a
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• pp.436-439
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• 2007

This paper describes the optimization of PGS(Patterned Ground Shield) of 5.5 turns rectangular spiral inductor using Taguchi's method. PGS is decrease method of parasite component by silicon substrate among dielectric loss reduction method. By using the taguchi's method, each parameter is fixed upon that PGS high poison(A), slot spacing(B), strip width(C) and overlap turn number(D) of PGS design parameter. Then we verified that percentage contribution and design sensitivity analysis of each parameter and level by signal to noise ratio of larger-the-better type. We consider percentage contribution and design sensitivity of each parameter and level, and then verify that model of optimization for PGS is lower inductance decreasing ratio and higher Q-factor increasing ratio by EM simulation.

• Journal of Power System Engineering
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• v.16 no.2
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• pp.54-59
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• 2012

In the present study, process optimization for thermal-sprayed Ni-based alloy coating has been performed using Taguchi method and analysis of variance(ANOVA). Ni-based alloy coatings were fabricated by flame spray process on steel substrate, and the hardness test and wear test were performed. Experiments were designed as per Taguchi's L9 orthogonal array and tests were conducted with different Oxygen gas flow, Acetylene gas flow, Powder feed rate and Spray distance. Multi response signal to noise ratio (MRSN) was calculated for the response variables and the optimum combination level of factors was obtained simultaneously using Taguchi's parametric design.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.697-700
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• 1999

This Paper presents the design, fabrication, analysis of the measured date of a voltage controlled oscillator(VCO) for the application of Personal Communication Systems. Main VCO circuit consists of self biased emitter resonating circuit with microstrip line resonator on FR4 epoxy substrate. A varactor diode is used for 90MHz frequency tuning with center frequency of 1635MHz Phase noise of -114.67㏈C/Hz at 100KHz off set has been achieved with 3.3 V supply. The size of the fabricated VCO circuit is 1.25 cm$\times$ 1.25 cm.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.3 s.333
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• pp.25-34
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• 2005

In this paper, we analyzed and measured the electrical crosstalk characteristics of a triplex transceiver module for ethernet Passive optical networks(EPONS). And we improved the electrical crosstalk levels using Dummy ground lines with signal lines. The triplex transceiver module consists of a laser diode as a transmitter, a digital photodetector as a digital data receiver, and a analog photodetector as a community antenna television signal receiver. And there are integrated on silicon substrate. The digital receiver and analog receiver sensitivity have to meet -24 dBm at $BER=10^{-l2}$ and -7.7 dBm at 44 dB SNR. And the electrical crosstalk levels have to maintain less than -86 dB from DC to 3 GHz. From analysis and measurement results, the proposed silicon substrate structure that contains the Dummy ground line with $100\;{\mu}m$ space from signal lines and separates 4 mm among devices respectively, is satisfied the electrical crosstalk level compared to simple structure. This proposed structure can be easily implemented with design convenience and greatly reduced the silicon substrate size about $50\%$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.3
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• pp.169-181
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• 2011

In this present paper, a comprehensive drain current model incorporating the effects of channel length modulation has been presented for multi-layered gate material engineered trapezoidal recessed channel (MLGME-TRC) MOSFET and the expression for linearity performance metrics, i.e. higher order transconductance coefficients: $g_{m1}$, $g_{m2}$, $g_{m3}$, and figure-of-merit (FOM) metrics; $V_{IP2}$, $V_{IP3}$, IIP3 and 1-dB compression point, has been obtained. It is shown that, the incorporation of multi-layered architecture on gate material engineered trapezoidal recessed channel (GME-TRC) MOSFET leads to improved linearity performance in comparison to its conventional counterparts trapezoidal recessed channel (TRC) and rectangular recessed channel (RRC) MOSFETs, proving its efficiency for low-noise applications and future ULSI production. The impact of various structural parameters such as variation of work function, substrate doping and source/drain junction depth ($X_j$) or negative junction depth (NJD) have been examined for GME-TRC MOSFET and compared its effectiveness with MLGME-TRC MOSFET. The results obtained from proposed model are verified with simulated and experimental results. A good agreement between the results is obtained, thus validating the model.

• Journal of the Korean Institute of Telematics and Electronics
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• v.8 no.5
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• pp.10-19
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• 1971

Problems and technologies involved in integrating an audio preamplifier in terms of thick film technology has been discussed in detail. In particular, an attempt has been made to find methods for functional trimming of the amplifer by employing computer analysis. Among seven resistors integrated on a alumina substrate, only one resistor was found to be very sensitive to over all performance of the preamplifier. By trimming this resistor to its freguency charcteristic reguirements, it was possible to cut down trimming labor by one seventh. Besides, problems concerning resistor conductor contacts, crossover parasitic capacitance and the relations between noise per(ormance and trimming method are discussed in detail.

• Journal of the Korean Society for Precision Engineering
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• v.18 no.1
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• pp.89-97
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• 2001

A microgyroscope, which vibrates in two orthogonal axes on the substrate plane, is designed and fabricated. The shuttle mass of the vibrating gyroscope consists of two parts. The one is outer shuttle mass which vibrates in driving mode guided by four folded springs attached to anchors. And the other is inner shuttle mass which vibrates in driving mode as the outer frame does and also can vibrate in sensing mode guided by four folded springs attached to the outer shuttle mass. Due to the directions of vibrating mode, it is possible to fabricate the gyroscope with simplified process by using polysilicon on insulator structure. Fabrication processes of the microgyroscope are composed of anisotropic silicon etching by RIE, gas-phase etching (GPE) of the buried sacrificial oxide layer, metal electrode formation. An eletromechanical model of the vibrating microgyroscope was modeled and bandwidth characteristics of the gyroscope operates at DC 4V and AC 0.1V in a vacuum chamber of 100mtorr. The detection circuit consists of a discrete sense amplifier and a noise canceling circuit. Using the evaluated electromechanical model, an operating condition for high performance of the gyroscope is obtained.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.807-813
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• 1986

Measurements of interface states in a MOS capacitor by DLTS system using wideband monophase lock-in amplifier are discussed. A new signal analysis method that takes into account the bias pulse width and the gate off width is presented to remove the errors in the measured parameters of interface states resulting from the traditional method which neglects the effect of those widths. Theoretical calculations are made for the parameters related to the rate window, signal to noise ratio, and the energy resolution. On the grounds of this discussion, interface states of the MOS capacitor on p-type substrate of (110) orentation are measured with the optimal gate-off width with respect to the S/N ratio and the energy resolution. The results are interface state density of the order of 10**10 (cm-\ulcornereV**-1) to 10**11 (cm-\ulcornereV**-1) in the energy range of Ev+0.15(dV) to Ev+0.5(eV), and constant capture cross section of the order of 10**-16 (cm\ulcorner.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.859-864
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• 2000

Recently IR detecting devices using MEMS have been actively studied. Microbolometer, one of these devices, detects the change of resistivity as the change of temperature of the device by absorbing IR, IR absorbing materials for microbolometer should have high TCR value and low noise characteristics which depends on resistivity. We fabricated multi-layer VOx thin films to improve the IR detectivity of uncooled IR devices and analyzed IR absorbing characteristics. We fabricated multi-layer VOx thin films by RF reactive sputtering method on SiNx substrate and changed characteristics using the different thickness of V and V$_2$O$\_$5/ thin films. Then we annealed them under 300$\^{C}$. The TCR (Temperature Coefficient of Resistance) measurement was carried out to estimate the IR detectivity of multi-layer VOx thin films. XRD (X-Ray Diffraction) analysis was carried out to estimate the IR detectivity of multi-layer VOx thin films. ZXRD (X-Ray Diffraction) analysis was used to find out phases and structures of V and V$_2$O$\_$5/ thin films. AES (Auger Electron Spectroscopy) analysis was used to find out composition of multi-layer VOx thin films before and after annealing. We obtained the optimum thickness range of V and V$_2$O$\_$5/ thin films from the result of AES analysis. We changed the thickness of V$_2$O$\_$5/ about 20 to 150 $\AA$ and thickness of V about 10 to 20 $\AA$. As the result of this, TCR value of multi-layer VOx thin films was about -2%/k and the resistivity was ∼1Ωcm.