• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.895-898
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• 1999

Recently, small signal modeling of CMOS device becomes more difficult because the design rule goes into deep submicron. De-embedding of substrate parameters is important in order to use CMOS devices at RF frequencies. In this paper, we suggest a new de-embedding model with refined physical meaning and accuracy. In GaAs IC’s, the substrate is almost an insulator but Si substrate has the semiconducting characteristics. It offers some troubles if it is treated like GaAs substrate. The conducting substrate is modeled with five resistances, which leads to very accurate modeling so long as the pad layout is symmetrical. Frequency range is up to 39㎓ and fitting accuracy is as small as 0.00037 on least square errors.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.487-490
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• 2004

In order to simulate OLED evaporation process, modeling of directional distribution of the vaporized organic materials, film thickness distribution profile and pattern-mask shadow effect are required In accordance with many literatures; all of them except shadow effect modeling are studied and developed. In this paper, modeling algorithm of evaporation shadow is presented for process simulation of full-color OLED evaporating system. In OLED evaporating process the offset position of the point cell-source against the substrate rotation axis and the usage of the patterned mask are the principal causes for evaporation shadow. For geometric simulation of shadow using z-map, the film thickness profile, which is condensed on a glass substrate, is converted to the z-map data. In practical evaporation process, the glass substrate is rotated. This physical fact is solved and modeled mathematically for z-map simulation. After simulating the evaporation process, the z-map data can present the shadow-effected film thickness profile. Z-map is an efficient method in that the cross-sectional presentations of the film thickness profile and thickness distribution evaluation are easily and rapidly achieved.

• Proceedings of the Korea Society of Information Technology Applications Conference
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• 2002.11a
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• pp.363-370
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• 2002

A substrate network model characterizing substrate effect of submicron MOS transistors for RF operation and its parameter extraction with physically meaningful values are presented. The proposed substrate network model includes a single resistance and inductance originated from ring-type substrate contacts around active devices. Model parameters are extracted from S-parameter data measured from common-bulk configured MOS transistors with floating gate and use where needed with out any optimization. The proposed modeling technique has been applied to various-sized MOS transistors. Excellent agreement the measurement data and the simulation results using extracted substrate network model up to 30GHz.

• Proceedings of the Korea Society for Industrial Systems Conference
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• 2002.11a
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• pp.363-370
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• 2002

A substrate network model characterizing substrate effect of submicron MOS transistors for RF operation and its parameter extraction with physically meaningful values are presented. The proposed substrate network model includes a single resistance and inductance originated from ring-type substrate contacts around active devices. Model parameters are extracted from S-parameter data measured from common-bulk configured MOS transistors with floating gate and use where needed with out any optimization. The proposed modeling technique has been applied to various-sized MOS transistors. Excellent agreement the measurement data and the simulation results using extracted substrate network model up to 30㎓

• Journal of Korea Society of Industrial Information Systems
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• v.7 no.5
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• pp.147-153
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• 2002

In this paper, a substrate network model to be used with BSIM3 MOSFET model for submicron MOSFETs in giga hertz frequencies and its direct parameter extraction with physically meaningful values are proposed. The proposed substrate network model includes a conventional resistance and single inductance originated from ring-type substrate contacts around active devices. Model parameters are extracted from S-parameter data measured from common-bulk configured MOS transistors with floating gate and use where needed without any optimization process. The proposed modeling technique has been applied to various-sized MOS transistors. The substrate model has been validated for frequency up to 300Hz.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.393-396
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• 1999

A circuit model of silicon substrate coupling for CMOS RF-IC design is developed. Its characteristics are analyzed by using a simple RC mesh model in order to investigate substrate coupling. The coupling effects due to the substrate were characterized with substrate resistivity, oxide thickness, substrate thickness. and physical distance. Thereby the silicon substrate effects are analytically investigated and verified with simulation. The analysis and simulation of the model have excellent agreements with MEDICI(2D device simulator) simulation results.

• Journal of Microbiology and Biotechnology
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• v.25 no.9
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• pp.1417-1424
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• 2015

In this study, we tried to characterize Streptomyces peucetius CYP157C4 with homology modeling using three cytochrome P450 (CYP) structures (CYP157C1, CYP164A2, and CYP107L1), having discovered that CYP157C4 lacks the ExxR motif that was considered invariant in all CYPs. We used Discovery Studio 3.5 to build our model after first assessing the stereochemical quality and side-chain environment, and a 7-ethoxycoumarin substrate was docked into the final model. The model-substrate complex allowed us to identify functionally important residues and validate the active-site architecture. We found a distance of 4.56 Å between the 7-ethoxycoumarin and the active site of the heme, and cloning and an in vitro assay of the CYP157C4 showed the dealkylation of the substrate. Since the details regarding this group of CYP structures are still unknown, the findings of this study may provide elucidation to assist with future efforts to find a legitimate substrate.

• Proceedings of the Korean Biophysical Society Conference
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• 2003.06a
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• pp.70-70
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• 2003

Active sites and substrate bindings of 1-aminoxyclopropane-1-carboxylate oxidase (MD-ACO1) catalyzing the oxidative conversion of ACC to ethylene have been determined based on site-directed mutagenesis and comparative modeling methods. Molecular modeling based on the crystal structure of Isopenicillin N synthase (IPNS) provided MD-ACO1 structure. MD-ACO1 protein folds into a compact jelly roll shape, consisting of 9 ${\alpha}$-helices, 10 ${\beta}$-strands and several long loops. The MD-ACO1/ACC/Fe(II)/Ascorbate complex conformation was determined from automated docking program, AUTODOCK. The MD-ACO1/Fell complex model was consistent with well known binding motif information (HIS177-ASP179-HIS234). The cosubstrate, ascorbate is placed between iron binding pocket and Arg244 of MD-ACO1 enzyme, supporting the critical role of Arg244 for generating reaction product. These findings are strongly supported by previous biochemical data as well as site-directed mutagenesis data. The structure of enzyme/substrate suggests the structural mechanism for the biochemical role as well as substrate specificity of MD-ACO1 enzyme.

• Applied Science and Convergence Technology
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• v.23 no.4
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• pp.179-186
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• 2014

Fluid model based numerical simulation was carried out for an inductively coupled plasma assisted sputter deposition system. Power absorption, electron temperature and density distribution was modeled with drift diffusion approximation. Effect of an electrically conducting substrate was analyzed and showed confined plasma below the substrate. Part of the plasma was leaked around the substrate edge. Comparison between the quasi-neutrality based compact model and Poisson equation resolved model showed more broadened profile in inductively coupled plasma power absorption than quasi-neutrality case, but very similar Ar ion number density profile. Electric potential was calculated to be in the range of 50 V between a Cr rod source and a conductive substrate. A new model including Cr sputtering by Ar+was developed and used in simulating Cr deposition process. Cr was modeled to be ionized by direct electron impact and showed narrower distribution than Ar ions.

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2248-2252
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• 2007

SOMT-9 is an O-methyltransferase that utilizes quercetin to produce 3'-methoxy quercetin. In order to determine which amino acids of SOMT-9 are important for this reaction and its regioselectivity, molecular docking experiments followed by site directed mutagenesis were performed. Molecular modeling and molecular docking experiments identified several amino acid residues involved in metal binding, AdoMet binding, and substrate binding. Site-directed mutagenesis showed that Asp188 is critical for metal binding and that Lys165 assists other metal binding residues in maintaining quercetin in the proper position during the reaction. In addition, Tyr207 was shown to play an important role in the determination of the regioselectivity and Met60 was shown to be involved in formation of the hydrophobic pocket necessary for substrate binding. The molecular modeling and docking experiments discussed in this study could be applicable to future research including prediction of substrate binding and regioselectivity of an enzyme.