• Journal of the Korean Graphic Arts Communication Society
• /
• v.29 no.2
• /
• pp.71-82
• /
• 2011

Electronic display markets has been developed. The cathode ray tube of brown form recently celebrated their 100th by first display. Also LCD of flat form recently celebrated their 25th by second display and it has advantage of small volume, lower consumption power. But FPD has problem that is property of brittle and noncarrying by glass substrate. Therefore the arrival of portable electronics devices has put an increasing premium on durable, lightweight and inexpensive display components. It is flexible display by third display. Also electronics field such as printed wiring board, RFID, membrane switch prefer flexible display. The conductive pattern can be used mostly in field of electronic displays and electronics. This manufacture of conductive pattern in present used is screen printing. The the conductive pattern. It has advantages of flexibility, high conductivity, drying in low temperature, good conductivity. screen printing has problem that is low productivity and use not flexible substrate because of high fire temperature. This study was developed novel method to form the conductive pattern. It has advantages of flexibility, high conductivity, drying in low temperature, good conductivity.

• Bulletin of the Korean Chemical Society
• /
• v.35 no.6
• /
• pp.1799-1805
• /
• 2014

In this article, we described about the preparation and electrochemical properties of a flexible energy storage system based on a plastic polyethylene terephthalate (PET) substrate. The PET treated with UV/ozone was fabricated with multilayer films composed of 30 polyaniline (PANi)/graphene oxide (GO) bilayers using layer-by-layer assembly of positively charged PANi and negatively charged GO. The conversion of GO to the reduced graphene oxide (RGO) in the multilayer film was achieved using hydroiodic acid vapor at $100^{\circ}C$, whereby PANi structure remained nearly unchanged except a little reduction of doping state. Cyclic voltammetry and charge/discharge curves of 30 PANi/RGO bilayers on PET substrate (shorten to PANi-$RGO_{30}$/PET) exhibited an excellent volumetric capacitance, good cycling stability, and rapid charge/discharge rates despite no use of any metal current collectors. The specific capacitance from charge/discharge curve of the PANi-$RGO_{30}$/PET electrode was found to be $529F/cm^3$ at a current density of $3A/cm^3$, which is one of the best values yet achieved among carbon-based materials including conducting polymers. Furthermore, the intrinsic electrical resistance of the PANi-$RGO_{30}$/PET electrodes varied within 20% range during 200 bending cycles at a fixed bend radius of 2.2 mm, indicating the increase in their flexibility by a factor of 225 compared with the ITO/PET electrode.

• Current Applied Physics
• /
• v.18 no.12
• /
• pp.1486-1491
• /
• 2018

In recent years, mica has been successfully used as a substrate for the growth of flexible epitaxial ferroelectric oxide thin films. Here, we systematically investigated the flexibility of mica in terms of its thickness, repeated bending/unbending, extremely hot/cold conditions, and successive thermal cycling. A $20-{\mu}m-thick$ sheet of mica is flexible even up to the bending radius of 5 mm, and it is durable for 20,000 cycles of up- and down-bending. In addition, the mica shows flexibility at 10 and 773 K, and thermal cycling stability for the temperature variation of ca. 400 K. Compared with the widely used flexible polyimide, mica has a significantly higher Young's modulus (ca. 5.4 GPa) and negligible hysteresis in the force-displacement curve. These results show that mica should be a suitable substrate for piezoelectric energy-harvesting applications of ferroelectric oxide thin films at extremely low and high temperatures.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2002.05a
• /
• pp.74-78
• /
• 2002

MEMS공정을 이용하여 폴리실리콘의 piezoresistivity를 이용한 스트레인 센서어레이를 제작하였고, 이 센서 어레이를 flexible substrate에 패키징하는 공정을 개발하였다. 실리콘 웨이퍼에 표면 가공(surface micromachining)된 센서는 폴리이미드 코팅, release-etch 방법을 통해 웨이퍼로부터 분리되어 폴리이미드를 기판으로 하는 flexible sensor array module을 완성할 수 있었다. 공정은 희생층과 절연층을 증착하고 폴리실리콘 0.5 $\mu\textrm{m}$을 증착, 도핑 및 패터닝하여 센서 어레이를 구성하였다. 이 센서어레이를 flexible substrate에 패키징 하기 위해서 폴리이미드를 코팅하여 15 $\mu\textrm{m}$의 막을 구성하였고, 100% $O_2$RIE를 이용한 선택적 식각 방법으로 via hole을 구성하였다. 이후 전기도금을 통해 회로를 구성하여 1단계 패키징(die to chip carrier)과 2단계 패키징(chip to substrate)을 웨이퍼 레벨에서 완성하였다. 희생층을 제거함으로서 웨이퍼로부터 센서어레이 모듈을 분리하였다. 제작되어진 센서 모듈은 임의의 곡면에 실장이 가능하도록 충분한 flexibility를 얻을 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.341-341
• /
• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• Proceedings of the KIEE Conference
• /
• 2008.07a
• /
• pp.1262-1263
• /
• 2008

Recently film-typed dye sensitized solar cell(DSC) attracts much attention with increasing applications for its flexibility and transparency. The ZnO:Al thin film, which serves mainly as transparent conducting electrode, Aluminium-doped zinc oxide(ZnO:Al) thin film has emerged as one of the most promising transparent conducting films since it is inexpensive, mechanically stable, and highly resistant to deoxidation. In this paper ZnO:Al thin film was deposited on the polyethylene terephthalate(PET) substrate by the capacitively coupled r. f. magnetron sputtering method. The effects of gas pressure and r. f. discharge power on the morphological, electrical and optical properties of ZnO:Al thin film were studied. Especially the variation in substrate thickness after sputtering and surface morphology of the substrate were investigated and clarified. The results showed that the film deposited on the PET substrate at r. f. discharge power of 180 W showed the minimum resistivity of about $1.5{\times}10^{-3}{\Omega}-cm$ and a transmittance of about 93%.

• Journal of Microbiology and Biotechnology
• /
• v.26 no.12
• /
• pp.2087-2097
• /
• 2016

Most cold-adapted enzymes possess higher $K_m$ and $k_{cat}$ values than those of their mesophilic counterparts to maximize the reaction rate. This characteristic is often ascribed to a high structural flexibility and improved dynamics in the active site. However, this may be less convincing to cold-adapted metabolic enzymes, which work at substrate concentrations near $K_m$. In this respect, cold adaptation of a shikimate kinase (SK) in the shikimate pathway from psychrophilic Colwellia psychrerythraea (CpSK) was characterized by comparing it with a mesophilic Escherichia coli homolog (EcSK). The optimum temperatures for CpSK and EcSK activity were approximately $30^{\circ}C$ and $40^{\circ}C$, respectively. The melting points were $33^{\circ}C$ and $45^{\circ}C$ for CpSK and EcSK, respectively. The ${\Delta}G_{H_2O}$ (denaturation in the absence of denaturing agent) values were 3.94 and 5.74 kcal/mol for CpSK and EcSK, respectively. These results indicated that CpSK was a cold-adapted enzyme. However, contrary to typical kinetic data, CpSK had a lower $K_m$ for its substrate shikimate than most mesophilic SKs, and the $k_{cat}$ was not increased. This observation suggested that CpSK may have evolved to exhibit increased substrate affinity at low intracellular concentrations of shikimate in the cold environment. Sequence analysis and homology modeling also showed that some important salt bridges were lost in CpSK, and higher Arg residues around critical Arg 140 seemed to increase flexibility for catalysis. Taken together, these data demonstrate that CpSK exhibits characteristics of cold adaptation with unusual kinetic parameters, which may provide important insights into the cold adaptation of metabolic enzymes.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.389.2-389.2
• /
• 2014

Polydimethylsiloxane (PDMS) based electronic devices are widely used for various applications in large area electronics, biomedical wearable interfaces and implantable circuitry where flexibility and/or stretchability are required. A few fabrication methods of electronic devices directly on PDMS substrate have been reported. However, it is well known that micro-cracks appear in the metal layer and in the lithography pattern on a PDMS substrate. To solve the above problems, a few studies for fabrication of stiff platform on PDMS substrate have been reported. Thin-film islands of a stiff region are fabricated on an elastomeric substrate, and electronic devices are fabricated on these stiff islands. When the substrate is stretched, the deformation is mainly accommodated by the substrate, and the stiff islands and electronic devices experience relatively small strains. Here, we report a new method to achieve stiff islands structures on an elastomeric substrate at a various thickness, as the platform for stretchable electronic devices. The stiff islands were defined by conventional photolithography on a stress-free elastomeric substrate. This technique can provide a practical strategy for realizing large-area stretchable electronic circuits, for various applications such as stretchable display or wearable electronic systems.

• Journal of Powder Materials
• /
• v.22 no.5
• /
• pp.331-336
• /
• 2015

We report on the succesful fabrication of ZnO nanorod (NR)-based robust piezoelectric nanogenerators (PNGs) by using Cu foil substrate. The ZnO NRs are successfully grown on the Cu foil substrate by using all solution based method, a two step hydrothermal synthesis. The ZnO NRs are grown along c-axis well with an average diameter of 75~80 nm and length of $1{\sim}1.5{\mu}m$. The ZnO NRs showed abnormal photoluminescence specrta which is attributed from surface plasmon resonance assistant enhancement at specific wavelength. The PNGs on the SUS substrates show typical piezoelectric output performance which showing a frequency dependent voltage enhancement and polarity dependent charging and discharging characteristics. The output voltage range is 0.79~2.28 V with variation of input strain frequency of 1.8~3.9 Hz. The PNG on Cu foil shows reliable output performance even at the operation over 200 times without showing degradation of output voltage. The current output from the PNG is $0.7{\mu}A/cm^2$ which is a typical out-put range from the ZnO NR-based PNGs. These performance enhancement is attributed from the high flexibility, high electrical conductivity and excellent heat dissipation properties of the Cu foil as a substrate.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.20 no.9
• /
• pp.104-109
• /
• 2021

Tactile sensors and integrated circuits that detect external stimuli have been developed for use in various industries. Most tactile sensors have been developed using the MEMS(micro electro-mechanical systems) process in which metal electrodes and strain sensors are applied to a silicon substrate. However, tactile sensors made of highly brittle silicon lack flexibility and are prone to damage by external forces. Flexible tactile sensors based on polydimethylsiloxane and using a multi-walled carbon nano-tube mixture as a pressure-sensitive material are currently being developed as an alternative to overcome these limitations. In this study, a manufacturing process of pressure-sensitive materials with low initial electrical resistance is developed and applied to the fabrication of flexible tactile sensors. In addition, flexible tactile sensors are developed with pressure-sensitive materials dispensed on a substrate with flexible mechanical properties. Finally, a study is conducted on the change in electrical resistance of pressure-sensitive materials according to the modulus of elasticity of the substrate.