• Journal of the Korean institute of surface engineering
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• v.31 no.3
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• pp.165-170
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• 1998

Deposition of diamond on silicon substrates has been performed by RF HPCVD (Helicon Plasma Chemical Vapor Deposition) from methane-hydrogen gas mixture. Growth properties and deposition condition conditions have been studies as functions of substrate temperature ($750^{\circ}C$~$850^{\circ}C$). Si p-type (100) wafers were used as a substrate. The chharecterizations of the gaind thin films by SEM, AFM and Raman seattring are diamond crystallites which include disordered graphit.

• Journal of Environmental Science International
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• v.21 no.12
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• pp.1455-1462
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• 2012

The vertical distributions of nitrifying bacteria in aerobic fixed biofilm were investigated to evaluate the relationship between nitrification performance and microbial community at different HRT. Fluorescent in situ hybridization (FISH) and portable ion selective microelectrode system were adopted to analyze microbial communities and ions profiles according to the biofilm depth. Cilia media packed MLE (Modified Ludzack-Ettinger) like reactor composed of anoxic, aerobic I/II was operated with synthetic wastewater having COD 200 mg/L and $NH_4{^+}$-N mg/L at HRT of 6 hrs and 4 hrs. Total biofilm thickness of aerobic I, II reactor at 4 hrs condition was over two times than that of 6 hrs condition due to the sufficient substrate supply at 4 hrs condition (6 hrs; aerobic I 380 ${\mu}m$ and II 400 ${\mu}m$, 4 hrs; aerobic I 830 ${\mu}m$ and II 1040 ${\mu}m$). As deepen the biofilm detection point, the ratio of ammonia oxidizing bacteria (AOB) was decreased while the ratio of nitrite oxidizing bacteria (NOB) was maintained similar distribution at both HRT condition. The ratio of AOB was higher at 4 hrs than 6 hrs condition and $NH_4{^+}$-N removal efficiency was also higher at 4 hrs with 89.2% than 65.4% of 6 hrs. However, the ratio of NOB was decreased when HRT was reduced from 6 hrs to 4 hrs and $NO_2{^-}$-N accumulation was observed at 4 hrs condition. Therefore, it is considered that insufficient HRT condition could supply sufficient substrate and enrichment of AOB in all depth of fixed biofilm but cause decrease of NOB and nitrite accumulation.

• Proceedings of the Korea Concrete Institute Conference
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• 1998.04b
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• pp.613-617
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• 1998

This study deals with the effect on adhesive strength properties of fiber sheet layer and maintenance position of coccrete structure reinforced using epoxy resin carbon and aramit fiber sheet. Properties of epoxy resin adhesive strength of the concrete bridge slab, tunnel and wall etc. reinforced using fiber sheet under many different environment change according to condition of concrete substrate, temperature, moisture, curing, cleaning, and chemical effects and so on. The purpose of this study is that it makes the estimation value of adhesive strength of concrete substrate and fiber sheet reinforcing layer penetrated epoxy resin under high temperature(9$0^{\circ}C$), chemical attack and condition of curing.

• Journal of Sensor Science and Technology
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• v.22 no.3
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• pp.175-180
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• 2013

This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, $Si_2(CH_3)_6$) as a safe organosilane single precursor in a nonflammable $H_2$/Ar ($H_2$ in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at $1280^{\circ}C$. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields.

• Korean Journal of Crystallography
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• v.3 no.1
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• pp.53-66
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• 1992

Extensive research has been perform성 on the property-microstructure-process condition relations of thin films. The various proposed models are mainly based on physical vapor deposition processes. Especially the study on the surface condition of substrates in Zone 1 with low surface mobility has not been sufficient. In this study, therefore, we discussed the mochological changes of TiN films deposited by plusma enhanced chemical vapor deposition process with substrates of different composition and micro-rorghness, and compared it with the Structure Zone Model. We could find out that the growth rate of films increased and micro-grain size decreased with the increase in micro-roughness, but it does not improve the mechanical properties because of many imperfections like voids, micro-cracks, stacking faults, etc. This means that, in these deposition conditions, the increase in shadowing diffect is more effective than the increase in nucleation sites on the growth of films due to the increase in substrate roughness.

• Journal of the Korean Graphic Arts Communication Society
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• v.22 no.2
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• pp.151-162
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• 2004

MnSb layers were grown on GaAs(100), (111)A and (111)B substrates by hot wall epitaxy under various growth conditions. Growth condition dependence of structural properties of the layers was examined. The growth direction and structural properties of MnSb/GaAs(100) depend on Sb source and substrate temperatures. The smooth MnSb(10.1)/GaAs(100) interface was obtained under the appropriate growth condition. On the other hand, MnSb(00.1) layers were grown on GaAs(111) substrates. The quality of the layers on (111)B was superior to that on GaAs(111)A, but degraded as in increasing Sb source temperature during the growth. The $Mn_2Sb$ domain was generated in the layers grown under conditions of low Sb source temperature and high substrate temperature on GaAs(111) substrates.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.257-262
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• 1997

Aluminum nitride(AIN) thin films were deposited on SiO$_2$/Si substrates by reactive sputtering for the application of SAW devices. The major deposition parameters such as pressure, nitrogen fraction, rf power, substrate distance were changed to find out the optimal condition for c-axis oriented thin films on an amorphous substrate. The effects of deposition parameters on the crystal structure, residual stress, and growth morphology of thin films were characterized by XRD, SEM, and TEM. The FWHM of (002) rocking curve of the films deposited at the proper condition was lower than 2.2$^{\circ}$(C=0.93$^{\circ}$). Cross-sectional TEM showed that self-aligned structure was developed just after slightly random growth at the initial stage. The frequency characteristics of test device fabricated from AIN thin films confirmed their piezoelectric property and applicability for SAW devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.133-135
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• 2006

SBN60 and SBN60/30 thin films were deposited by ion beam sputtering technique. Using the ceramic target of the same composition and Pt(100)/$TiO_2$/$SiO_2$/Si or Pt(111)/Ti/$SiO_2$/Si substrate, crystallization and orientation behavior as well as electric properties of the films were examined, Thickness was controlled to $3000{\AA}$ and the films were heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation and crystallization behavior were observed which showed the dependence on processing condition($O_2$/Ar ratio, substrate temp, annealing temp...).

• Journal of the Korean Ceramic Society
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• v.36 no.4
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• pp.444-450
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• 1999

Hydroxyapatite(HA) was spray-coated to alloy substrate(Ti-6Al-4V) using plasma-spray process for bioceramic application The coating morphology composition and crystallinity were influenced by following process parameters ; stand-off distance spray power level and auxiliary gas pressure. These parameters have been systematically varied in the present study to evaluate their relative influence on the coating qual-ity and to seek an optimum spraying condition. Amorphicity and decomposition of HA increased with stand-off distance and the imperfect coating layer was obtained at the short stant-off distance (55mm). The cry-stallinity of HA coating decreased with spray power level and auxiliary gas pressure but the bond strength between the HA coated layer and Ti alloy substrate increased with the spray power level.

• Journal of the Korean institute of surface engineering
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• v.39 no.4
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• pp.153-159
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• 2006

Nanodiamond films were deposited on Si substrate by introducing a time dependent on/off modulation of $CH_4\;and\;O_2$ flows in a vertical-type microwave plasma enhanced chemical vapor deposition system. Surface morphology and diamond quality of the film were investigated as a function of the on/off modulation time interval. The diamond nucleation density on the substrate was enhanced under low temperature and low pressure condition. In addition, the diamond nucleation density was enhanced by increasing the on/off modulation time interval. Enhanced diamond quality was noticeable under the condition of a longer on/off modulation time interval. It was suggested that the nanodiamond nuclei formed the cluster formation.