• Ocean and Polar Research
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• v.43 no.3
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• pp.99-111
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• 2021

Occurrence of epiphytic dinoflagellates (EPDs) in coastal waters off Jeju was first reported in 2011 based on 45 substrate samples from 24 macroalgal species. When re-analyzing, the extreme heterogeneous distribution of whole and genus-specific EPDs was reconfirmed across the sampling stations and substrate macroalgal species, as well as even across substrate samples of the same species. Abundance maximum of an EPD genus (cells g-wwt^-1) at a fixed surface-to-volume ratio (SA/V ratio) of the macroalgal species increased as the SA/V ratio increased up to 500 (cm² cm^-3). However, the abundance maximum of Ostreopsis further increased even in the MG2 (morphological group 2) macroalgae with the SA/V ratios over 500. The number of substrate macroalgal species on the plane of the MG and sampling station was more or less evenly scattered than the average EPD abundance, which was primarily driven by Gambierdiscus and Ostreopsis. Of the total EPD abundance of the five stations, 90.6% were represented by the two most common and abundant genera, Gambierdiscus and Ostreopsis, each accounting for 41.6% and 49.0%. Spatially, 95.9% of the total EPD abundance was found in St. 4 and St. 5, of which St. 4 with higher water temperature had more Ostreopsis spp. (31.8%), and St. 5 with higher salinity had more Gambierdiscus spp. (27.3%). Thus, the environmental transition to favorable T-S condition to MG2, the thin filamentous macroalgal group with very high SA/V ratios, is thus likely to support further success in EPD genera led by Ostreopsis in the coastal waters of Jeju.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.8
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• pp.565-571
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• 2003

We prepare the PVDF thin film using vacuum deposition method with the application of voltage and obtain the optimum deposition condition for $\beta$-PVDF thin film on the basis of the results of FT-IR, crystallinity of $\beta$ phase, surface roughness studies with varying the condition. The phase of PVDF thin film is analyzed by the FT-IR spectrum. When the substrate temperature and applied voltage increase from 3$0^{\circ}C$ to 9$0^{\circ}C$ and from 0kV to 9kV, respectively, the crystallinity of $\beta$ phase is introduced as large as 64%. It means that the substrate temperature and applied voltage allow the phase transition of $\beta$ phase to occur more easily. Also, the surface roughness of PVDF thin film decreases from 65.1nm to 36.6nm with the increase of substrate temperature. In results, we obtain the optimum deposition conditions for $\beta$-PVDF thin film from these experimental results and measure the Properties of the $\beta$-PVDF film deposited in the optimum condition. The dielectric properties such as dielectric constant and loss tangent decrease from 2.34 to 0.44 and from 0.27 to 0.04 with the increase of frequency, respectively.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.399-405
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• 2014

Porous alumina with different porosities, 5.2 - 47.5%, were coated with cover-glass having a thickness of $160{\mu}m$, using epoxy adhesive. We investigated the effect of the porosity of the substrate layer on the crack initiation load, and the size of cracks propagated in the coating layer. Hertzian indentations were used to evaluate the damage behavior under a constrained loading condition. Typically, two types of cracks, ring cracks and radial cracks, were observed on the surface of the glass/porous alumina structure. Indentation stress-strain curves, crack initiation loads, crack propagation sizes, and flexural strengths were investigated as a function of porosities. The results indicated that a porosity of less than 30% and a higher substrate elastic modulus were beneficial at suppressing cracks occurrence and propagation. We expect lightweight mechanical components with high strength can be successfully fabricated by coating and controlling porosities in the substrate layer.

• Journal of environmental and Sanitary engineering
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• v.8 no.1
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• pp.107-116
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• 1993

This study is conducted to investigate treatability by activated sludge process for wastewater from acetaldehyde manufacturing plant. The optimum hydraulic retention time in aeration tank for removal of high strength substrate were measured. The removal efficiency were checked out by hydraulic retention time : 35hr., 40hr. and 45hr., respectively. $COD_{Cr}$, like substances were removed in all hydraulic retention time zone directed for efficiency, but non-biodegradable substances were remained. $COD_{Cr}$ biomass loading was 0.81kg $COD_{Cr}/kgMLVSS$ . day at 35hr. of retention time, 0.34 kg$COD_{Cr}$/kg MLVSS . day at 40hr., and O.l9kg$COD_Cr$/kgMLVSS . day at 45hr. And the mean $COD_{Cr}$, removal efficiency was 65.5%, 81.6% and 83.0%, respectively. And also $COD_{Cr}$, volume loading was 1.01kg$COD_{Cr}/m^3$ day, 0.87kg$COD_{Cr}/m^3$ - day, and 0.79kg$COD_{Cr}/m^3{\cdot }$day, respectively. The basic design parameter obtained is as fallows. The value of Specific substrate removal rate coefficient (k), Yield coefficient(Y) and Decay coefficient($k_d$) was $0.0013day^{-1}$, $0.505kgMLVSS/kgCOD_{Cr}$ and $0.040day^{-1}$, respectively.

• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.6-11
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• 2004

YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) films were deposited on MgO(100) and SrTiO$_3$(100) single crystal substrates by cold-wall type MOCVD method using continuous source supplying system. Under the deposition temperature of 740∼76$0^{\circ}C$, c-axis oriented YBCO films were obtained. In case of the YBCO films deposited on MgO (100) single crystal substrate, the critical temperature (T$_{c}$) was under 81 K regardless of the deposition conditions, whereas T$_{c}$ of the YBCO films deposited on SrTiO$_3$(100) single crystal substrate was 83∼84 K. The critical current (I$_{c}$) of the YBCO film deposited on SrTiO$_3$(100) single crystal substrate for 30 min was 49 A/cm-width and the critical current density (J$_{c}$) was 0.82 MA/$\textrm{cm}^2$ to film thickness of 0.6 ${\mu}{\textrm}{m}$. I$_{c}$ increased to 84.4 A/cm-width as the deposition time increased to 50 min, but J$_{c}$ decreased to 0.53 MA/$\textrm{cm}^2$ to film thickness of 1.8 ${\mu}{\textrm}{m}$.rm}{m}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.549-554
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• 2009

Al thin films were synthesized on TiN/Si substrate by MOCVD using N-methylpyrrolidine alane (MPA) precursor. Effects of substrate temperature, reaction pressure on the deposition rate, surface roughness and electrical resistivity were investigated. The early stage of Al thin film formation was analyzed by in-situ surface reflectivity measurement with a laser and photometer apparatus. From the Arrhenius plot of deposition rate vs. substrate temperature, it was found that the activation energy of surface reaction was 91.1kJ/mole, and the transition temperature from surface-reaction-limited region to mass-transfer-limited region was about $150^{\circ}C$. The growth rate increased with the reaction pressure, and average growth rates of $200{\sim}1,200nm/min$ were observed at various experimental conditions. Surface roughness of the film increased with the film thickness. The electrical resistivity of Al film was about $4{\mu}{\Omega}{\cdot}cm$ in the case of optimum condition, and it was close to the value of the bulk Al, $2.7{\mu}{\Omega}{\cdot}cm$.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.2067_2068
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• 2009

Resistivity changes and intermetallic growth after thermal aging of Matter tin-plated copper sheet for current collector in fuel cell were investigated to survey the diffusion of Cu into Sn in interface and surface. The results show that the intermetallic growth and resistivity depended on thermal aging temperature and dwell time. In Sn plate on a Cu substrate, $Cu_6Sn_5({\mu})$ and $Cu_3Sn({\varepsilon})$ intermetallics layer were formed at plate/substrate interface. $Cu_6Sn_5({\mu})$ intermetallics layer gradually changed $Cu_3Sn({\varepsilon})$. Moreover Cu get through Sn layer and it was diffused in the surface at $200^{\circ}C$. On the other hand, only $Cu_3Sn({\varepsilon})$ intermetallics layer were formed at plate/substrate interface at $300^{\circ}C$. Consequently, the intermetallics formation, thermal condition and oxidation of surface, causes increase in the resistivity of Tin-plated copper sheet.

• Journal of Hydrogen and New Energy
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• v.17 no.3
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• pp.286-292
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• 2006

Chlamydomonas reinhardtii is a green algae that can use light energy and water to produce hydrogen under anaerobic condition. This work reports the effect of limiting factors on hydrogen production in sulfur deprived anaerobic C. reinhardtii culture. In order to confirm the relationship between hydrogen production and limiting factors such as residual PSII activity and endogenic substrate degradation, the increase in chlorophyll concentration and the decrease in starch concentration was investigated during sulfur deprivation. The overall hydrogen production increased depending on cell density in range of $0.4{\sim}0.96\;g$ DCW/l. At this time, the increase in chlorophyll concentration during 24 h after sulfur deprivation increased in proportion to hydrogen production, however, the decrease in starch concentration was not proportional to that. Therefore, hydrogen production under sulfur deprivation using green alga was closely associated with the residual PSII activity than the endogenic substrate degradation.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.278-284
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• 1995

Thin fihn SnO$_{2}$ Gas Sensor was fabricated by electron-beam evaporation system and the target made by general firing method for the purpose of detecting gas components in air, especially methane gas. SnO$_{2}$ thin film was prepared on the polished alumina substrate which Pt interdigital electrode was precoated. The effects of annealing temperature and substrate temperature on the structural properties of SnO$_{2}$ thin film on glass were investigated using the X-ray diffraction. The good crystalline structure is formed when substrate temperature is 150[.deg. C] and annealing condition is 550[.deg. C], 1[hour]. And the sensing properties at various thickness of the SnO$_{2}$ thin film and the effects of PdCI$_{2}$ addition were also investigated. The good result is showed when the thickness is below 1000[.angs.] and the quantity of PdCI$_{2}$ addition is 4[wt%]. The thickness of SnO$_{2}$ thin film was measured by .alpha.-step and Elliopsometer.

• The Korean Journal of Ceramics
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• v.4 no.1
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• pp.25-27
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• 1998

The effect of gas activation on the formation of SiC layer on Si substrate using methane as a carbon source was investigated. Tungsten filaments, heated above 200$0^{\circ}C$, were used to activate the methane-hydrogen mixed gas. The dissociation of methane gas by the heated filament was enough to form a SiC layer successfully, which was very difficult without any activation. The SiC layer formed on the Si substrate was crystalline and nearly epitaxial as measured by X-ray diffraction. The SiC layer formed on the Si substrate was crystalline and nearly epitaxial as measured by X-ray diffraction. The stoichiometry was also close to 1:1. However, the characteristic of the SiC layer was dependent on the heat-treatment condition. The general behavior of the layer growth with the variables was discussed.