• Journal of Life Science
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• v.18 no.4
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• pp.585-589
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• 2008

Chronophin is a phosphatase responsible for the dephosphorylation of cofilin, which regulates the rearrangement of actin cytoskeleton. It is also known as a phosphatase for pyrodoxal 5'-phosphate (PLP), an active form of vitamin $B_6$, and maintains the level of PLP in the cytoplasm. Since this phosphatase belongs to a HAD subfamily containing a cap domain, it is expected to undergo a conformational change for the binding of a substrate. However, the crystal structure of chronophin has a disulfide bridge between the cap and core domains preventing a movement of the cap domain against the core domain. It is possible that the disulfide bond between C91 and C221 was formed by an oxidation during the crystallization. Here, we obtained chronophin crystals under a reduced condition and determined the crystal structure. This reduced chronophin does not contain a disulfide bridge and shows a closed conformation like the oxidized form. It implies that an active chronophin binds its substrate under the closed conformation without the disulfide bond and shows a high substrate specificity in the cell.

• Journal of the Korea institute for structural maintenance and inspection
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• v.12 no.2
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• pp.67-74
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• 2008

This paper provides the test results of bonding behavior of the interface between concrete substrate and carbon fiber in the rehabilitation method applying carbon fiber with epoxy based resin adhesive. The difference in each components was gradually increased subjected to the repetition of temperature variation, regardless of the strength of the substrate concrete, while the ultrasonic interface between each component occurred. An increase in difference of the temperature resulted in a decrease in bond strength of each component. Associated failure mode was shown to be interfacial failure and substrate concrete failure. No remarkable changes were found in the deformation and ultrasonic velocity of each component until the four cycles of the dry and moisture test. Hence, the moisture condition may not affect the bonding behavior of each component. After the repetition of dry and moisture test, corresponding bond strength was reduced to 40% of that before test. For the effect of freeze and thaw test, the cycle of freeze and thaw within 4 cycles resulted in debonding of each component.

• Transactions of the Korean hydrogen and new energy society
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• v.22 no.3
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• pp.326-332
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• 2011

The authors examined the effects of operating parameters on the $H_2$ production by dark fermentation of the wastewater generated from food waste recycling facilities, in short "food waste wastewater (FWW)". Central composite design based response surface methodology was applied to analyze the effect of initial pH (5.5-8.5) and substrate concentration (2-20 g Carbo. COD/L) on $H_2$ production. The experiment was conducted under mesophilic ($35^{\circ}C$) condition and a heat-treated ($90^{\circ}C$ for 20min)anaerobic digester sludge was used as a seeding source. Although there was a little difference in carbohydrate removal, $H_2$ yield was largely affected by the experimental conditions, from 0.38 to 1.77 mol $H_2$/mol $hexose_{added}$. By applying regression analysis, $H_2$ yield was well fitted based on the coded value to a second order polynomial equation (p = 0.0243): Y = $1.78-0.17X_1+0.30X_2+0.37X_1X_2-0.29X_1{^2}-0.35X_2{^2}$, where $X_1$, $X_2$, and Y are pH, substrate concentration (g Carbo. COD/L), and hydrogen yield (mol $H_2$/mol $hexose_{added}$), respectively. The 2-D response surface clearly showed a high inter-dependency between initial pH and substrate concentration, and the role of these two factors was to control the pH during fermentation. According to the statistical optimization, the optimum condition of initial pH and substrate concentration were 7.0 and 13.4 g Carbo. COD/L, respectively, under which predicted $H_2$ yield was 1.84 mol $H_2$/mol $hexose_{added}$. Microbial analysis using 16S rRNA PCR-DGGE showed that $Clostridium$ sp. such as $Clostridium$ $perfringens$, $Clostridium$ $sticklandii$, and $Clostridium$ $bifermentans$ were main $H_2$-producers.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.220-220
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• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

• Journal of Korean Ophthalmic Optics Society
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• v.9 no.2
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• pp.291-299
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• 2004

DLC films were deposited using the ECR-PECVD method with the fixed deposition condition, such as ECR power, methane and hydrogen gas-flow rates and deposition time, for various substrate bias voltage. We have investigated the ion bombardment effect induced by the substrate bias voltage on films during the deposition of film. The characteristic of the films were analyzed using the FTIR, Raman, and UV/Vis spectroscopy analysis shows that the amount of dehydrogenation in films was increased with the increase of substrate bias voltage and films thickness was decreased. Raman scattering analysis shows that integrated intensity ratio(ID/IG) of the D and G peak was increased as the substrate bias voltage increased and films hardness was increased. Optical transmittances of DLC film were decreased with increasing deposition time and substrate bias voltage. From these results, it can be concluded that films deposited at this experimental have the enhanced characteristics of DLC because of the ion bombardment effect on films during the deposition of film.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1425_1426
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• 2009

In this study, commercially available polyethylene terephthalate(PET), which is widely used as a substrate of flexible electronic devices, was modified by dielectric barrier discharge(DBD) method in an air condition at atmospheric pressure, and aluminium - doped zinc oxide (ZnO:Al) transparent conducting film was deposited on PET substrate by r. f. magnetron sputtering method. Surface analysis and characterization of the plasma-treated PET substrate was carried out using contact angle measurements, X-ray Photoelectron Spectroscopy(XPS) and Atomic Force Microscopy (AFM). Especially the effect of surface state of PET substrate on some important properties of ZnO:Al transparent conducting film such as electrical and morphological properties and deposition rate of the film, was studied experimentally. The results showed that the contact angle of water on PET film was reduced significantly from $62^{\circ}$ to $43^{\circ}$ by DBD surface treatment at 20 min. of treatment time. The plasma treatment also improved the deposition rate and electrical properties. The deposition rate was increased almost linearly with surface treatment time. The lowest electrical resistivity as low as $4.97{\times}10^{-3}[\Omega-cm]$ and the highest deposition rate of 234[${\AA}m$/min] were obtained in ZnO:Al film with surface treatment time of 5min. and 20min., respectively.

• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.116-121
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• 1999

0.5 wt%Nb-doped SrTiO3(Nb: STO) thin film was prepared on MgO(100) single crystal substrates by Pulsed Laser Deposition (PLD). The Crystallinity and the orientation of Nb:STO thin films were characterized by XRD with changing the thin film processing condition-oxygen partial pressure, substrate temperature, deposition time and the distance between target and substrate. The orientation of Nb:STO thin film showed (100), (110) and (111) orientations at the substrate temperature of $700^{\circ}C$. The lattice parameter of Nb:STO decreased with increasing Po2 and showed 0.3905 nm at Po2=100 Pa, which was similar to that of the bulk. The thickness of Nb:STO thin film increased with increasing the deposition time and with decreasing the distance between target and substrate.

• Korean Journal of Ecology and Environment
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• v.50 no.3
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• pp.355-361
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• 2017

In this study, we investigated the response of freshwater oligochaete, Tubifex tubifex, to the water temperature changes and the differences of substrate composition in a laboratory condition. The changes of body shape were observed in a test cage according to the water temperature change ranging from $10^{\circ}C$ to $30^{\circ}C$ with $2^{\circ}C$ interval every 10 minutes. The substrate preference was observed with four different substrate composition from silt-clay to coarse sand. Our results displayed that T. tubifex preferred substrates with the smallest particle size (<0.063 mm). The water temperature influenced on the activity and body shape of T. tubifex, showing low activity with the coiled and constricted body shapes at lower temperature and high activity with relaxed linear body shapes at higher temperature.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.190-198
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• 2010

Asymmetric model for plasma uniformity by Ar and $CF_4$ was modeled by the antenna structure, the diameter of chamber, and the distance between source and substrate for the development of plasma equipment for 450 mm wafer. The aspect ratio of chamber was divided by diameter, distance from substrate, and pumping port area. And we found the condition with the optimized plasma uniformity by changing the antenna structure. The drift diffusion and quasi-neutrality for simplification were used, and the ion energy function was activated for the surface recombination and etching reaction. The uniformity of plasma density on substrate surface was improved by being far of the distance between substrate wall and chamber wall, and substrate and plasma source. And when the antenna of only 2 turns was used, the plasma uniformity can improve from 20~30% to 4.7%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.600-605
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• 2007

Process variables for manufacturing the $CuInSe_2$ thin film were established in order to clarify optimum conditions for growth of the thin film depending upon process conditions (substrate temperature, sputtering pressure, DC/RF Power), and then by changing a number of vapor deposition conditions and Annealing conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were vapor-deposited in the named order. Among them, Cu and In were vapor-deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1 : 1, while the surface temperature having an effect on the quality of the thin film was changed from $100^{\circ}C\;to\;300^{\circ}C$ at intervals of $50^{\circ}C$. The diffract fringe of X-ray, which depended upon the substrate temperature and the Annealing temperature of the manufactured $CuInSe_2$ thin film, was investigated. scanning electron microgaphs of represents a case that a sample manufactured at the substrate temperature of $100^{\circ}C$ was thermally treated at $200{\times}350^{\circ}C$. As a result, at $500^{\circ}C$ of the Annealing temperature, their chemical composition was measured in the proportion of 1 : 1 : 2. It could be known that under this condition, the most excellent thin film was formed, compared with the other conditions.