• KSII Transactions on Internet and Information Systems (TIIS)
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• v.9 no.7
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• pp.2488-2511
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• 2015

Data redundancy has high impact on Wireless Sensor Network's (WSN) performance and reliability. Spatial and temporal similarity is an inherent property of sensory data. By reducing this spatio-temporal data redundancy, substantial amount of nodal energy and bandwidth can be conserved. Most of the data gathering approaches use either temporal correlation or spatial correlation to minimize data redundancy. In Collective Prediction exploiting Spatio Temporal correlation (CoPeST), we exploit both the spatial and temporal correlation between sensory data. In the proposed work, the spatial redundancy of sensor data is reduced by similarity based sub clustering, where closely correlated sensor nodes are represented by a single representative node. The temporal redundancy is reduced by model based prediction approach, where only a subset of sensor data is transmitted and the rest is predicted. The proposed work reduces substantial amount of energy expensive communication, while maintaining the data within user define error threshold. Being a distributed approach, the proposed work is highly scalable. The work achieves up to 65% data reduction in a periodical data gathering system with an error tolerance of 0.6℃ on collected data.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.1
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• pp.19-27
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• 2007

In this paper, we develope and implement a TFT-LCD cell defects detection algorithm using morphology. To detect the bright line or dark line defects and the bright pixel or dark pixel defects of the TFT-LCD cells, we determine the shape of the morphology operators considering the shape characteristics of the TFT-LCD sub pixels. Using dilation, erosion, and the subtraction operators, we extract gray level defects information. Then, we apply the optimal threshold method which shows the best results in terms of several criteria. Finally, we determine the defects using labelling method. From various experiments using TFT-LCD panels, the proposed algorithm shows superior results.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.9A
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• pp.710-716
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• 2003

OFDM is a very attractive technique for achieving high-bit-rate data transmission and high spectrum efficiency. However one of disadvantages of OFDM signal is the high PAPR characteristic when multicarriers are added up coherently. In this paper, we propose an adaptive PTS scheme using two threshold levels for PAPR reduction and reducing the amount of PAPR calculations with clipping scheme. Simulation results show that it is almost same between average bit error rate performance of the proposed scheme and that of a conventional scheme. Also, we obtain a great performance gain in the amount of calculations compared to the conventional scheme. Therefore, proposed system has a good performance in data processing time in OFDM wireless communication systems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.343-346
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• 1998

The generation of pretilt angle in nematic liquid crystal (NLC) and electro-optical (EO) characteristics of photo-aligned twisted nematic (TN)-LCD with oblique P-polarized ultraviolet (UV) light irradiation on the two kinds of the soluble polyimide (PI) surfaces containing trifluoromethyl moieties were investigated. The generated pretilt angle of NLC is about 2.5$^{\circ}$with P-polarized UV light irradiation of 20$^{\circ}$on PI-3 surface at 20 min.; However pretilt angle of about 0.5$^{\circ}$are observed on PI-1 and PI-2 surfaces. The generated pretilt angle of NLC on PI-3 surface may be attributed to the trifluoromethyl moieties attached to the lateral benzene rings. The voltage-transmittance and response time characteristics of photo-aligned TN-LCD with P-polarized UV light irradiation of 20$^{\circ}$on PI-1 surface at 20 min were almost same in comparison with the rubbing-aligned TN-LCD. However, the high threshold voltage and slow response are observed on PI-3 surface. Also, the decay time $\tau$$\sub$d/ of photo-aligned TN-LCD is attributed to the anchoring energy of NLC.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1466-1469
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• 2008

We have fabricated 2.5 inch QQCIF AM-OLED panel driven by ZnO-TFT on a plastic substrate for the first time. The number of photo mask for the whole panel process was 5 and the TFT structure was top gate with active protection layer as a first gate insulator. Optimizing the process for the substrate buffer layer, active layer, ZnO protection layer, and gate insulator was key factor to achieve the TFT performance enough to drive OLED. The ZnO TFT has mobility of $5.4\;cm^2/V.s$, turn on voltage of -6.8 V, sub-threshold swing of 0.39 V/decade, and on/off ratio of $1.7{\times}10^9$. Although whole process temperature is below $150^{\circ}C$ to be suitable for the plastic substrate, performance of ZnO TFT was comparable to that fabricated at higher temperature on the glass.

• Journal of the Korea Institute of Military Science and Technology
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• v.12 no.4
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• pp.446-451
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• 2009

In this paper, we described the design and test results of a high output power amplifier MMIC developed by using 0.5um power pHEMT processes on a 6-inch GaAs wafer for the X-band T/R module application. In the MMIC design, we have used a simple on-chip gate active bias technology to compensate the threshold-voltage variation of pHEMT during the fabrication process and 16-to-1 power combining method to achieve the output power over 10watt. The fabricated chip has an output power over 12watts and maximum PAE of 32% over the frequency range of fo +/-750MHz.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.525-526
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• 2008

This paper proposes a new high-speed level shifter using a special high voltage device with low threshold voltage. Also, novel low voltage swing method is proposed. The high voltage device is a standard LDMOS(Laterally Diffused MOS) device in a $0.18{\mu}m$ CMOS process without adding extra mask or process step to realize it. A level shifter uses 5V LDMOSs as voltage clamps to protect 1.8V NMOS switches from high voltage stress the gate oxide. Also, level-up transition from 1.8V to 5V takes only 1.5ns in time. These circuits do not consume static DC power, therefore they are very suitable for low-power and high-speed interfaces in the deep sub-quarter-micron CMOS technologies.

• ETRI Journal
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• v.28 no.1
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• pp.51-58
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• 2006

In this paper, we propose a method of applying a lifting-based wavelet domain e-median filter (LBWDEMF) for image restoration. LBWDEMF helps in reducing the number of computations. An e-median filter is a type of modified median filter that processes each pixel of the output of a standard median filter in a binary manner, keeping the output of the median filter unchanged or replacing it with the original pixel value. Binary decision-making is controlled by comparing the absolute difference of the median filter output and the original image to a preset threshold. In addition, the advantage of LBWDEMF is that probabilities of encountering root images are spread over sub-band images, and therefore the e-median filter is unlikely to encounter root images at an early stage of iterations and generates a better result as iteration increases. The proposed method transforms an image into the wavelet domain using lifting-based wavelet filters, then applies an e-median filter in the wavelet domain, transforms the result into the spatial domain, and finally goes through one spatial domain e-median filter to produce the final restored image. Moreover, in order to validate the effectiveness of the proposed method we compare the result obtained using the proposed method to those using a spatial domain median filter (SDMF), spatial domain e-median filter (SDEMF), and wavelet thresholding method. Experimental results show that the proposed method is superior to SDMF, SDEMF, and wavelet thresholding in terms of image restoration.

• Atmosphere
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• v.25 no.3
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• pp.461-472
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• 2015

The sudden stratospheric warming (SSW), which is characterized by an abrupt increase of polar stratospheric temperature by several tens of degrees in a week, has been known to affect tropospheric weather and climate on sub-seasonal time scale in the boreal winter. Such downward coupling has been often examined in North Atlantic and Europe, but rarely examined in East Asia. In this study, by applying the two definitions of SSW to the reanalysis data, the possible impacts of the SSW events on the surface air temperature (SAT) and tropospheric circulation in East Asia are analyzed. It is found that Eurasian continent, including Siberia and the Northeast Asia, tends to experience anomalously cold SAT for up to sixty days after the SSW events. The resulting SAT anomalies largely resemble those associated with negative Artic Oscillation. However, over East Asia, SSW-related SAT change is weak and not statistically significant. Only during the extreme SSW events when the downward coupling between the stratosphere and troposphere is strong, East Asia exhibits significantly cold SAT anomalies. This relationship is presented by grouping SSW events into those followed by cold SAT anomalies over East Asia and those by warm anomalies for varying threshold values of the SSW events.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.9
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• pp.89-95
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• 1994

BaTiO$_{x}$ thin film as insulator and ZnS:Mn film as phosphour layer for thin film electrouminescent device have been deposited by thermal evalporation and dependence of electrical and opeical characeristics have been studied. The optimum deposition conditions for the BaTiO$_{x}$ thin film are such that BaTiO$_{3}$/TiO$_{2}$ mixing ratio was 0.7, sub strate temperature was 100 $^{\circ}C$ and annealing time was 1 hour at 300 $^{\circ}C$. In this case, the dielectric constant of BaTiO$_{x}$ thin film fabricated under those optimum conditions was 26, and for AnS:Mn thin films, the crystallization was done well and the deposition rate was 1300 $\AA$/min when substrate temperature was 200$^{\circ}C$. Thin film Electroluminescent devices were fabricated using BaTiO$_{x}$ and AnS:Mn thin films. The luminescence threshold voltage of device was 41.5 V and brightness was 1.2${\mu}W/cm^{2}$ at appied voltage of 50 V.