• Journal of information and communication convergence engineering
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• 제11권4호
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• pp.288-292
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• 2013

In this paper, a carbon implant is investigated in detail from the perspectives of performance advantages and side effects for the thick n-type metal-oxide-semiconductor field-effect transistor (n-MOSFET). Threshold voltage ($V_{th}$) adjustment using a carbon implant significantly improves the $V_{th}$ mismatch performance in a thick (3.3-V) n-MOS transistor. It has been reported that a bad mismatch occurs particularly in the case of 0.11-${\mu}m$ $V_{th}$ node technology. This paper investigates a carbon implant process as a promising candidate for the optimal $V_{th}$ roll-off curve. The carbon implant makes the $V_{th}$ roll-off curve perfectly flat, which is explained in detail. Further, the mechanism of hot carrier injection lifetime degradation by the carbon implant is investigated, and new process integration involving the addition of a nitrogen implant in the lightly doped drain process is offered as its solution. This paper presents the critical side effects, such as Isub increases and device performance shifts caused by the carbon implant and suggests an efficient method to avoid these issues.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.243.1-243.1
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• 2013

본 연구에서는 산소 분압과 열처리 온도에 따른 ITZO 박막 트랜지스터의 전기적 특성 향상을 목적으로 실험을 진행하였다. 1) ITZO 박막 증착 시 산소 분압 가변($O_2/(Ar+O_2)$ 30~40%), 열처리 온도 고정($350^{\circ}C$)과 2) ITZO 박막 증착 시 산소 분압 고정(30%), 열처리 온도($200{\sim}400^{\circ}C$)를 가변하여 실험을 진행하였다. 두 실험 모두 특성향상을 위해 산소 분위기에서 열처리를 진행하였다. 산소의 분압이 증가할수록 산소 빈자리를 채우면서 전자 농도가 감소하여 채널 전도 효과가 줄어들면서 Hump 현상이 발생하였고, 스윙이 증가, 문턱 전압이 음의 방향으로 이동하였다. 이에 $O_2/(Ar+O_2)$)의 30%에서 30%일때, 문턱전압은 1.98 V, 전계 효과 이동도는 28.97 $cm2/V{\cdot}s$, sub-threshold swing은 280 mv/dec, on-off 비율은 ~107로 가장 우수한 전기적 특성을 보였다. 또한 열처리 온도 가변 시 $400^{\circ}C$에서 전계 효과 이동도는 28.97 $cm^2/V{\cdot}s$로 $200^{\circ}C$의 전계 효과 이동도는 11.59 $cm^2/V{\cdot}s$에 비해 약 3배 증가하였고, 소자의 스위칭 척도인 sub-threshold swing은 약 180 mv/dec 감소하였다. 문턱 전압은 0.97V, on-off ratio는 약 107을 보였다. 동일한 산소 분압의 분위기에서 $400^{\circ}C$ 열처리 시 가장 우수한 전기적 특성을 보였고, 저온 공정으로 인한 플렉서블 디스플레이 투명 디스플레이 적용 가능성을 확인하였다.

• Nuclear Engineering and Technology
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• 제54권4호
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• pp.1301-1311
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• 2022

Global climate change brings environmental quality sensitivity, especially in developed countries. Developed countries use non-renewable energy sources intensively both in their own countries and in other countries, they make productions that cause an enormous rate of increase in CO₂ emissions and unsustainable environmental costs. This has increased the interest in environmentally friendly alternative energy sources. The aim of this study is to investigate the impact of nuclear energy consumption and technological innovation on environmental quality in G7 countries using annual data over the period 1970-2015. The Panel Threshold Regression Model was used for the analysis. Empirical findings have indicated that the relationship between nuclear energy consumption and carbon emissions differs according to innovation for nuclear power plants. It was also concluded that nuclear energy consumption reduces carbon emissions more after a certain level of innovation. This result shows that the increase in innovative technologies for nuclear power plants not only increases energy efficiency but also contributes positively to environmental quality.

• 한국전자파학회논문지
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• 제15권7호
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• pp.692-697
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• 2004

OFDM(orthogonal frequency division multiplexing)통신 시스템은 다중 경로 간섭에 효과적이며, 대역효율이 우수한 통신 방식이다. 하지만, OFDM 신호는 높은 PAPR(peak to average power ratio)이 나타나므로 HPA(high power amplifier)에 의해 비선형 왜곡이 발생하게 된다. 본 연구는 HPA의 비선형을 보상하기 위해 predisotertor를 사용했을 때, IBO(input back off)에 따른 비선형 특성 변화를 연구하였다. SSPA(solid state power amplifier)에서 IBO=0 ㏈일 경우인 포화점 동작에서는 오히려 predistorter를 사용하지 않는 것이 시스템 성능이 더 좋았다. 하지만, IBO=3 ㏈일 때는 predistorter를 사용하는 시스템이 좋은 성능을 보인다. 즉, 적절한 back-off를 해야만 predistorter의 성능이 발휘된다. 결과적으로 본 연구에서는 predistorter의 이득이 발생되기 시작하는 threshold IBO를 OFDM 시스템의 sub-carrier 수와 SSPA의 비선형 파라메터 p 값에 따라 구하였다.

• 천문학회지
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• 제41권6호
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• pp.157-161
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• 2008

We have estimated the fractal dimension of the molecular clouds associated with the Hii region Sh 156 in the Outer Galaxy. We selected the $^{12}CO$ cube data from the FCRAO CO Survey of the Outer Galaxy. Using a developed code within IRAF, we identified slice-clouds (2-dimensional clouds in velocity-channel maps) with two threshold temperatures to estimate the fractal dimension. With the threshold temperatures of 1.8 K, and 3 K, we identified 317 slice-clouds and 217 slice-clouds, respectively. There seems to be a turn-over location in fractional dimension slope around NP (area; number of pixel) = 40. The fractal dimensions was estimated to be D = $1.5\;{\sim}\;1.53$ for $NP\;{\geq}\;40$, where $P\;{\propto}\;A^{D/2}$ (P is perimeter and A is area), which is slightly larger than other results. The sampling rate (spatial resolution) of observed data must be an important parameter when estimating fractal dimension. Fractal dimension is apparently invariant when varying the threshold temperatures applied to slice-clouds identification.

• 대한금속재료학회지
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• 제48권3호
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• pp.256-261
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• 2010

In this work, high-k dielectric stacks of $HfO_2$ and $HfO_2$/$Al_2O_3$/$HfO_2$ (HAH) were deposited on $SiO_2/Si$ substrates by atomic layer deposition as charge trapping layers in charge trapping devices. The structural stability and the charge trapping characteristics of such stacks were investigated using Metal-Alumina-Hafnia-Oxide-Silicon (MAHOS) structure. The surface roughness of $HfO_2$ was stable up to 11 nm with the insertion of 0.2 nm thick $Al_2O_3$. The effect of the thickness of the HAH stack and the thickness of intermediate $Al_2O_3$ on charge trapping characteristics were investigated for MAHOS structure under various gate bias pulse with duration of 100 ms. The threshold voltage shift after programming and erase showed that the memory window was increased with increasing bias on gate. However, the programming window was independent of the thickness of HAH charge trapping layers. When the thickness of $Al_2O_3$insertion increased from 0.2 nm to 1 nm, the erase window was decreased without change in the programming window.

• 한국산업보건학회지
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• 제8권1호
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• pp.76-87
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• 1998

The concentration of welding fume was measured by 221 welders themselves in chassis frame workplace of the manufactory from February, 1, 1996 to May, 31, 1997. Welding parameters were the welding current and the distance between helmet and arc. Those two optimum conditions were proposed by excess probability analysis using logistic regression, so the best position in the workplace was proposed considering two factors to control the welding fume. The results are as followings; 1) The excess proability of welding fume TLV was over 99% in above 260 Amperes of welding current and also in below 30cm of distanced between helmet and arc. 2) The equation from logistic regression analysis using SPSS/PC+5.02 had the welding current as a independent variable and the excess of welding fume TLV as a dependent variable (p<0.05). Logit(welding fume TLV) = 0.1296 ${\times}$ wlding currnet - 28.8750 3) The equation from logistic regression analysis using SPSS/PC+5.02 had the distance between helmet and arc as a independent variable and the excess of welding fume threshold limit value a, a dependent variable (p<0.05). Logit (welding fume TLV) = -0.6809 ${\times}$ distance between helmet and arc +25.1665 4) Considering both cases or 2) and 3). the result equation is following. (p<0.05). Logit (welding fume TLV) = 0.1346 ${\times}$ welding current -0.3859 ${\times}$ distance between helmet and arc -15.7382 5) The excess probability of welding fume threshold limit value was 100% in above 240 Ampere of welding current. Thus, below 220 Ampere can be suggested to reduce the 40% number of welders who have a excess welding fume threshold limit value. 6) The excess probability of welding fume TLV was 100% in below 34cm of distance between helmet and arc. Thus, over 38cm can be suggested to reduce the 33% number of welders who have a excess welding fume TLV. 7) Considering both 5) and 6) cases, first of all, the best welding current can be 200 Ampere to have a below 15% of welding fume excess probability for the welders who works in distance of 34-37cm. Secondly, to have a below 30% excess probability of welding fume TLV, the working distance must be over 38cm in 220 Ampere and 32cm in 200 Ampere. 8) To reduce the average exposure concentration of welding fume ($8.21{\pm}5.83mg/m^3$), the movable local exhaust system equipped with flexible hoods can be used.

• 자원ㆍ환경경제연구
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• 제29권2호
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• pp.219-246
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• 2020

배출권거래제 2차 계획기간(2018~2020년)부터 '국내기업 등이 외국에서 직접 시행한 CDM 사업'의 감축실적을 할당대상업체가 사용할 수 있게 되었다. 이에 시장의 이해관계자들은 한계비용이 낮으면서 많은 양의 배출권을 확보할 수 있는 '고효율 쿡스토브 보급사업'과 같은 해외 CDM 사업을 적극 추진하고 있다. 본 논문은 실물옵션 방법론을 활용하여 '고효율 쿡스토브 보급사업' 대한 외부사업자의 투자의사결정 모형을 개발하였다. 그리고 배출권 가격 불확실성하에서 '고효율 쿡스토브 보급사업'의 최적투자분기점(p^⁎) 도출 및 민감도 분석을 시행하였다. 그 결과 기준시나리오(PoA-S)에서의 최적투자분기점은 29,054원/톤으로 현재 배출권 현물 가격(p^⁎_spot)보다 낮아 고효율 쿡스토브 보급사업은 경제성이 있는 것으로 나타났다. 그러나 할당대상업체는 CDM 사업 추진 시 경제성뿐 아니라, 본 논문에서 분석한 투자유치국의 비재생 바이오매스 비율, 쿡스토브 교체 비율, 지분율, 사업기간 및 해외 외부사업 배출권의 사용 한도와 같은 위험요소도 고려하여 의사결정을 해야 한다. 그리고 외부사업자는 외부사업자의 고유 파라미터로 사업단계별 최적투자분기점을 도출하여 경제성 점검에 활용할 수 있을 것이다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 춘계학술대회 논문집
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• pp.719-723
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• 1997

The welding automation in ship manufacturing process,especially in the sub-assembly line is considered to be a difficult job because the welding part is too huge, various, unstructured for a welding robot to weld fully automatically. The weld orocess at the sub-assembly line for ship manufacturing is to joint the various stiffener on the base panel. In order to realize automatic robot weld in sub-assembly line, robot have to equip with the sensing system to recognize the position of the parts. In this research,we developed a vision system to detect the position of base panle for sub-assembly line is shipbuilding process. The vision system is composed of one CCD camera attached on the base of robot, 2-500W halogen lamps for active illumination. In the image processing algorithm,the base panel is represented by two set of lines located at its two corner through hough transform. However, the various noise line caused by highlight,scratches and stiffener,roller in conveyor, and so on is contained in the captured image, this nosie can be eliminated by region segmentation and threshold in hough transform domain. The matching process to recognize the position of weld panel is executed by finding patterns in the Hough transformed domain. The sets of experiments performed in the sub-assembly line show the effectiveness of the proposed algorithm.

• 센서학회지
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• 제29권4호
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• pp.275-278
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• 2020

In this study, we evaluated the temperature-dependent characteristics of homojunction InGaAs vertical Fin-shaped Tunnel Field-Effect Transistors (Fin TFETs), which were fabricated using a novel nano-fin patterning technique in which the Au electroplating and the high-temperature InGaAs dry-etching processes were combined. The fabricated homojunction InGaAs vertical Fin TFETs, with a fin width and gate length of 60 nm and 100 nm, respectively, exhibited excellent device characteristics, such as a minimum subthreshold swing of 80 mV/decade for drain voltage (V_DS) = 0.3 V at 300 K. We also analyzed the temperature-dependent characteristics of the fabricated TFETs and confirmed that the on-state characteristics were insensitive to temperature variations. From 77 K to 300 K, the subthreshold swing at gate voltage (V_GS) = threshold voltage (V_T), and it was constant at 115 mV/decade, thereby indicating that the conduction mechanism through band-to-band tunneling influenced the on-state characteristics of the devices.