• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.05a
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• pp.349-352
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• 2001

In this paper, novel device structure in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA) for ultra pn junction formation. Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10~20 nm for arsenic dosage (2$\times$10$^{14}$ $\textrm{cm}^2$), excimer laser source(λ=248nm) is KrF, and sheet resistances are measured to 1k$\Omega$/$\square$ at junction depth of 15nm.

• Korean Journal of Materials Research
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• v.9 no.2
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• pp.124-131
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• 1999

Copper film, which is expected to be used as interconnection material for 1 giga DRAM integrated circuits was deposited on hole and trench patterns by Metal Organic Chemical Vapor Deposition(MOCVD) method. After a reflow process, contact and L/S patterns were filled by copper and the characteristics of the Cu reflow process were investigated. When deposited Cu films were reflowed, grain growth and agglomeration of Cu have occurred in surfaces and inner parts of patterns as well as complete filling in patterns. Also Cu thin oxide layers were formed on the surface of Cu films reflowed in $O_2$ambient. Agglomeration and oxidation of Cu had bad influence on the electrical properties of Cu films especially, therefore, their removal and prevention were studied simultaneously. As a pattern size is decreased, preferential reflow takes place inside the patterns and this makes advantages in filling patterns of deep submicron size completely. With Cu reflow process, we could fill the patterns with the size of deep sub-micron and it is expected that Cu reflow process could meet the conditions of excellent interconnection for 1 giga DRAM device when it is combined with Cu MOCVD and CMP process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.335-338
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• 2003

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-layer dielectrics (ILD). Especially, defects such as micro-scratch lead to severe circuit failure which affect yield. CMP slurries can contain particles exceeding $1\;{\mu}m$ in size, which could cause micro-scratch on the wafer surface. In this paper, we have studied aging effect the of CMP sin as a function of particle size. We prepared and compared the self-developed silica slurry by adding of abrasives before and after annealing. As our preliminary experiment results, we could be obtained the relatively stable slurry characteristics comparable to original silica slurry in the slurry aging effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.171-175
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• 2001

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectrics and metal, which can apply to employed in integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of free-defects in inter level dielectrics and metal. Especially, defects like (micro-scratch) lead to severe circuit failure, and affects yield. Current conditioning method - bladder type, orbital pad motion- usually provides unsuitable pad profile during ex-situ conditioning near the end of pad life. Since much of the pad wear occurs by the mechanism of bladder type conditioning and its orbital motion without rotation, we need to implement new ex-situ conditioner which can prevent abnormal regional force on pad caused by bladder-type and also need to rotate the pad during conditioning. Another important study of ADPC is related to the orbital scratch of which source is assumed as diamond grit dropped from the strip during ex-situ conditioning. Scratch from diamond grit damaged wafer severely so usually scraped. Figure 1 shows the typical shape of scratch damaged from diamond. e suspected that intensive forces to the edge area of bladder type stripper accelerated the drop of Diamond grit during conditioning. so new designed Flat stripper was introduced.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.816-823
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• 1996

Chlorine containing high density plasmas are widely used to etch various materials in the microelectronic device fabrication. In this study, the characteristics of inductively coupled $Cl_2(O_2/N_2$) plasmas and their effects on the formation of silicon etching have been investigated using a Langmuir probe, quadrupole mass spectrometry(QMS), X-ray photoelectron spectroscopy(XPS), and Scanning Electron Microscopy(SEM). The addition of oxygen for chlorine plasmas reduced ion current densities and chlorine radical densities compared to the nitrogen addition by the recombination of oxygen with chlorine. Also, when silicon is etched in $Cl_2/O_2$ plasmas, etch products recombined with oxygen such as $SiCl_xO_y$ emerged. However, when nitrogen is added to chlorine, etch products recombined with nitrogen or Si-N bondings on the etched silicon surface were not found. All the silicon etch characteristics were dependent on the plasma conditions such as ion density, radical density, etc. As a result sub micron vertical silicon trench etch profiles could be effectively formed using optimized etch conditions for $Cl_2/O_2\; and \;Cl_2/N_2$ gas combinations.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.739-744
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• 1996

Lanthanide diphthalocyanines have interesting properties on electrochemical and chemical redox reactions. It is however, difficult to use because of thier short device life. Plasma-polymerization attends to improvement thier device life. Yb-diphthalocyanine ($YbPc_2$) polymer film was deposited in a parallel plate electrodes-type RF plasma reactor. $YbPc_2$ was sublimed into the argon plasma, and polymer film was obtained on a substrate. Radio frequency was constant of 13.56MHz. Pressure of argon gas, sublimation rate of $YbPc_2$ and RF power were variable parameters depending on film quality. Surface of polymer films include a lot of sub-micron order lumps. It was indicated that size of lumps depends on polymerization degree controled by parameters. Size of lumps and polymerization degree are increased with RF power. However, by the high RF power over 40W, polymerization degree is decreased with RF power and surface of film is rough. In condition of RF power is high, polymerization will compete with etching of film. We obtained good films for electrochromic display with RF power of 20W, argon gas pressure of 8.0 Pa and sublimationrate of $1.2 \times 10$ mol/min, and good films for gas sensor with RF power of 30W, argon gas pressure of 10.6Pa and sublimation rate of $1.2 \times 10$ mol/min.

• Korea-Australia Rheology Journal
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• v.20 no.4
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• pp.235-243
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• 2008

The aim of this study is to explore the possibility of incorporating supercritical carbon dioxide ($scCO_2$) into twin screw extrusion process for the production of polypropylene-clay nanocomposite (PPCN). The $CO_2$ is used as a reversible plasticizer which is expected to rapidly transport polymeric chains into the galleries of clay layers in its supercritical condition inside the extruder barrel and to expand the gallery spacings in its sub-critical state upon emerging from die. The structure and properties of the resulting PPCNs are characterized using wide-angle X-ray diffraction (WAXD), transmission electron microscopy (TEM), rheometry, thermogravimetry and mechanical testing. In the processing of the PPCNs with $scCO_2$, optimum $scCO_2$ concentration and screw speed which maximized the degree of intercalation of clay layers were observed. The WAXD result reveals that the PP/PP-g-MA/clay system treated with $scCO_2$ has more exfoliated structure than that without $scCO_2$ treatment, which is supported by TEM result. $scCO_2$ processing enhanced the thermal stability of PPCN hybrids. From the measurement of linear viscoelastic property, a solid-like behavior at low frequency was observed for the PPCNs with high concentration of PP-g-MA. The use of $scCO_2$ generally increased Young's modulus and tensile strength of PPCN hybrids.

• Proceedings of the KSRS Conference
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• 2007.10a
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• pp.57-60
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• 2007

Monthly mean data of ${\AA}ngstr{\ddot{o}}m$ exponent and Aerosol optical thickness (AOT) from Sea-viewing Wide Field-of-view Sensor (SeaWiFS) measurements over the East Asian waters were analyzed. Increasing trend of the satellite-derived ${\AA}ngstr{\ddot{o}}m$ exponent from 1998 to 2004 was found while AOT mean was observed stable during the same period. The trend of ${\AA}ngstr{\ddot{o}}m$ exponent is then interpreted as increase in fraction of small aerosol particles to give quantitative estimates on the variability of aerosols. The mean increase is evaluated to be $4{\sim}5%$ over the 7-year period in terms of the contribution of small particles to the total AOT, or sub-micron fraction (SMF). Possibilities of the observed trend arising from the sensor calibration or algorithm performance are carefully checked, which confirm our belief that this observed trend is rather a real fact than an artifact due to data processing. Another time series of SMF data (2000-2005) estimated from the fine-mode fraction (FMF) of Moderate Resolution Imaging Spectroradiometer (MODIS) supports this observation yet with different calibration system and retrieval algorithms.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1991.04a
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• pp.176-194
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• 1991

A study on the Manufactiring of High-Precision Linear Scale by the Use of He-Ne Laser Interference Of late, along with the advancement of procision machining technology, the reauirement of super-precision measurement increases as time goes on, and the precision and accuracy of standard scale which is a basis of procision measurement has been cognized as a oriterion of industrial development in a nation. Up to now, mechanical and chemical methods have been widely employed to carve scale lines on linear scale, and it is impossible for the linear scale manufactured by means of those methods to guarantee the measurement with sub-micron level owing to errors attended with various problems. And the measuring length also bears errors subjected to the influence of surroundings condition, and shows inefficient circumstances in measurement on the ground of the complexity of measuring procedure as well as massive measuring apparatus. Hence in this paper, we described on technology by which we can carve scale lines thru optical method under the condition of laboratory by using rhcoherence of He-Ne two-mode stabilized laser and in turn, put it to practical use as linear scale for the measurment of lengrh. In this researchin the case of setting scale interval to 20 .mu. m, we employed super-precision scale-carving device associated by Ar larser and acoustic optical modulator in lieu of flsahing lamp scale-carving device, and we consequently obtained superior linear scales carved with precision and accuracy of .+-. 0.3 .mu. m.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.10a
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• pp.536-539
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• 2002

In this paper, we developed the automatic optical fiber aligner by image processing and automatic loading system. Optical fiber is indispensable for optical communication systems that transmit large volumes of data at high speed, but super-precision technology in sub-micron units is required for optical axis adjustment, we have developed 6-axis micro stage system for I/O optical fiber arrays, the initial automatic aligning system/software for a input optical array by the image processing technique, fast I/O-synchronous aligning strategy, the automatic loading/unloading system and the automatic UV bonding mechanism. In order to adjust the alignment it used on PC based motion controller, a $10\mu\textrm{mm}$ repeat-detailed drawing of automatic loading system is developed by a primary line up for high detailed drawing. Also, at this researches used the image processing system and algorithm instead of the existing a primary hand-line up. and fiber input array and waveguide chip formed in line by automatic. Therefore, the developed and manufactured optical aligning system in this research fulfills the great role of support industry for major electronics manufacturers, telecommunications companies, universities, government agencies and other research institutions.