• 한국재료학회지
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• 제32권1호
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• pp.14-22
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• 2022

To improve light absorption ability in the visible light region and the efficiency of the charge transfer reaction, Pd nanoparticles decorated with reduced TiO₂ nanotube photocatalyst were synthesized. The reduced TiO₂ nanotube photocatalyst was fabricated by anodic oxidation of Ti plate, followed by an electrochemical reduction process using applied cathodic potential. For TiO₂ photocatalyst electrochemically reduced using an applied voltage of -1.3 V for 10 min, 38% of Ti⁴⁺ ions on TiO₂ surface were converted to Ti³⁺ ion. The formation of Ti³⁺ species leads to the decrease in the band gap energy, resulting in an increase in the light absorption ability in the visible range. To obtain better photocatalytic efficiency, Pd nanoparticles were decorated through photoreduction process on the surface of reduced TiO₂ nanotube photocatalyst (r10-TNT). The Pd nanoparticles decorated with reduced TiO₂ nanotube photocatalyst exhibited enhanced photocurrent response, and high efficiency and rate constant for aniline blue degradation; these were ascribed to the synergistic effect of the new electronic state of the TiO₂ band gap energy induced by formation of Ti³⁺ species on TiO₂, and by improvement of the charge transfer reaction.

• 한국표면공학회지
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• 제56권3호
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• pp.201-207
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• 2023

Eu³⁺-doped SnO² (SnO²:Eu³⁺) phosphor thin films were grown on quartz substrates by radio-frequency magnetron sputtering. The deposition temperature was varied from 100 to 400 ℃. The X-ray diffraction patterns showed that all the thin films had two mixed phases of SnO₂ and Eu₂Sn₂O₇. The 880 nmthick SnO²:Eu³⁺ thin film grown at 100 ℃ exhibited numerous pebble-shaped particles. The excitation spectra of SnO²:Eu³⁺ thin films consisted of a strong and broad peak at 312 nm in the vicinity from 250 to 350 nm owing to the O^2--Eu3+ charge transfer band, irrespective of deposition temperature. Upon 312 nm excitation, the SnO²:Eu³⁺ thin films showed a main emission peak at 592 nm arising from the ⁵D₀→⁷F₁ transition and a weak 615 nm red band originating from the ⁵D₀→⁷F₂ transition of Eu³⁺. As the deposition temperature increased, the emission intensities of two bands increased rapidly, approached a maximum at 100 ℃, and then decreased slowly at 400 ℃. The thin film deposited at 200 ℃ exhibited a band gap energy of 3.81 eV and an average transmittance of 73.7% in the wavelength range of 500-1100 nm. These results indicate that the luminescent intensity of SnO²:Eu³⁺ thin films can be controlled by changing the deposition temperature.

• 대한기계학회논문집
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• 제5권2호
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• pp.131-138
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• 1981

The effect of axial stress on the plastic deformation of rigid-perfectly plastic cylindrical tube under the impulsive band pressure is investigated. It is assumed that the tube is constructed with the material of Tresca's yield criterion. A closed from sloution is obtained for a rectangular pulse shape of uniform band pressure by using the circumscribed yield surface. The analysis shows that the effect ot exial stress is negligible when the dimensionless axial stress(n$\sub$x/= N$\sub$x/.delta.$\sub$y/H) is less than 0.2 or the dimensionless whdth of band pressure(.xi.=C/.root.RH) is greater than 2, but the effect of axial stress is of considerable importance when the axial stress is greater than 0.3 and the width of band pressure is less than 1.

• Bulletin of the Korean Chemical Society
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• 제24권8호
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• pp.1215-1218
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• 2003

An analysis of the bonding situation in CaM₂P₂ (M=Fe, Ni) with ThCr₂Si₂ structure is made in terms of DOS and COOP plots. The main contributions to covalent bonding are due to M-P and P-P interactions in both compounds. Particularly, the interlayer P-P bonding by variation in the transition metal is examined in more detail. It turns out that the shorter P-P bonds in CaNi₂P₂ form as a result of the decreasing electron delocalization into ${{\sigma}_p}^*$ of P₂ due to the weaker bonding interaction between the metal d and ${{\sigma}_p}^*$ as the metal d band is falling from Fe to Ni.

• 한국세라믹학회지
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• 제39권2호
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• pp.210-215
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• 2002

본 연구에서는 $CO_2$ 흡수단이 있는 4.3${\mu}m$ 파장대역의 광학 필터를 전자빔 증발 장치를 이용하여 Ge와 $SiO_2$ 박막을 다층으로 설계, 제작하였다. 제작된 Ge/$SiO_2$ 다층박막 필터는 기준파장에 대하여 반가폭(FWHM) 204nm, 투과율 58.2%, 금지대역에 대하여 5% 이하의 차단특성을 나타내는 협대역 투과필터 (narrow band-pass filter: BPF)특성을 나타내었다. 광학적 대역투과필터를 사용하여, FT-IR내에 감지실을 설치하여 단식 필터(KBr+BPF)와 복식필터(BPF+BPF)의 $CO_2$ 농도별 감도특성을 비교측정 하였다. 측정시 $CO_2$의 농도는 500ppm을 단위로 500∼5000ppm의 범위까지 관찰하였는데, 복식 필터는 단식 필터에 비해 투과율이 낮았지만, 우수한 감도 특성을 보였다.

• 한국전기전자재료학회논문지
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• 제36권5호
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• pp.488-493
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• 2023

The effect of sputtering power on the amorphous Ga₂O₃ thin film deposited using the radio frequency sputtering system was evaluated. Amorphous Ga₂O₃ is cheaper and more efficiently fabricated than crystalline Ga₂O₃, and is studied in various fields such as RRAM, photodetector, and flexible devices. In this study, amorphous Ga₂O₃ was deposited by radio frequency sputtering system and represented a transmittance of over 80% in the visible light region and a homogeneous and dense surface. The optical band gap energy decreased as the sputtering power increased owing to the quantum size effect. Thus, the specific band gap of amorphous Ga₂O₃ can be obtained by adjusting the sputtering power, it indicates amorphous Ga₂O₃ can be used in various fields.

• 전자공학회논문지 IE
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• 제47권2호
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• pp.60-65
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• 2010

본 논문은 저대역과 고대역 신호를 번갈아 전송하는 DBO-CSS 시스템에 최적화된 이중 대역 필터링 방법을 제안한다. 전체 신호 대역을 통과시키는 기존의 채널 필터링은 이웃하는 부대역 (sub-band)의 초과 잡음이 수신되는 다른 부대역의 신호에 더해지는 문제를 발생시킨다. 본 논문에서 제안하는 이중 대역 필터링 방법은 하드웨어 복잡도의 증가 없이 기존 채널 필터링 방법에서의 성능 저하를 극복할 수 있다. 제안된 방법은 저대역과 고대역 신호가 번갈아 수신되는 DBO-CSS 신호에 대응되는 두 개의 필터에 기반하므로 이웃하는 부 대역에서의 잡음 신호를 배제할 수 있다. 시뮬레이션 결과, 제안된 방법은 기존 필터링 방법보다 약 2.5 dB의 성능 향상을 가질 수 있음을 볼 수 있었다.

• 한국기계가공학회지
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• 제16권6호
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• pp.1-6
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• 2017

Recently, the brittle materials such as ceramics, glass, sapphire and textile material have been widely used in semiconductors, aerospace and automobile owing to high functional characteristics. On the other hand, it has the characteristics of difficult-to-cut material relative to all materials. In this study, diamond electro-deposited band-saw machine was developed to operate stably using water-coolant type through relative motion between band-saw tool and $Al_2O_3$ material. High densified $Al_2O_3$ material was manufactured by spark plasma sintering method. The bulk density was observed by the Archimedes law and the theoretical density was estimated to be $3.88g/cm^3$ and its hardness 14.7 MPa. From the dicing sawing test of $Al_2O_3$ specimen, behavior of surface roughness and band-saw wear are dominantly affected by the increase of the band-saw linear velocity. Additionally, an continuous pattern type of diamond band-saw was a very effective due to entry impact as a one-off for brittle material.

• 한국재료학회지
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• 제12권7호
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• pp.587-590
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• 2002

A silver indium sulfide ($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The crystal field splitting, $\Delta_{cr}$ , and the spin orbit splitting, $\Delta_{so}$ , have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_{g}$(T), was determined.d.

• Coupled systems mechanics
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• 제5권4호
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• pp.305-314
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• 2016

We utilize first-principles calculations within density-functional theory to investigate the possibility of strain engineering in the tuning of the band structure of two-dimensional $MoS_2$. We find that the band structure of $MoS_2$ monolayers transits from direct to indirect when mechanical strain is applied. In addition, we discuss the change in the band gap energy and the critical stains for the direct-to-indirect transition under various strains such as uniaxial, biaxial, and pure shear. Biaxial strain causes a larger change, and the pure shear stain causes a small change in the electronic band structure of the $MoS_2$ monolayer. We observe that the change in the interaction between molecular orbitals due to the mechanical strain alters the band gap type and energy.