• Proceedings of the Korean Operations and Management Science Society Conference
• /
• 1991.10a
• /
• pp.468-468
• /
• 1991

• Proceedings of the Korean Operations and Management Science Society Conference
• /
• 1989.10a
• /
• pp.86-87
• /
• 1989

• The Science & Technology
• /
• v.10 no.12 s.103
• /
• pp.47-47
• /
• 1977

• Bulletin of the Korean Chemical Society
• /
• v.35 no.1
• /
• pp.293-296
• /
• 2014

• Proceedings of the Korean Magnestics Society Conference
• /
• 2001.10a
• /
• pp.24-25
• /
• 2001

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2006.11a
• /
• pp.9.2-9.2
• /
• 2006

• Proceedings of the KWS Conference
• /
• 1992.10a
• /
• pp.233-238
• /
• 1992

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.18 no.6
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• pp.895-906
• /
• 1993

In this paper, MTSVQ(Multirate Tree-Structured Vector Quantization) is introduced for subband image coding. Original images are decomposed into a number of subband components, and multiresolution codebook is designed by MTSVQ algorithm. Optimal bit allocation among the subband components becomes the problem selecting the particular pruned subtree of MTSVQ which has the desired rate and distortion.

• Journal of the Korean Society for information Management
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• v.9 no.2
• /
• pp.118-153
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• 1992

This study att.empts to conduct a system an;~lysis and dcsign for circt~lation control in a univcr~ity library. In this proccss, structured sysltcm analys15 tcrhn~clucs Iikr data flolv diagrnms. data dictiomiry, and entity - relationship analysis, arc. vmploycd to construct both concqitual and p h p c a l data models of current and new circulation systems. Thc whole design aims at an al~tomntctf c~r.culation system on thc [nlcro-compurcr --basis in a mid dle - sized library.

• Transactions on Electrical and Electronic Materials
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• v.7 no.5
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• pp.257-261
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• 2006

Nano-structured carbon nitride $(CN_x)$ films were prepared by reactive RF magnetron sputtering with a DC bias at various deposition conditions, and the physical and electrical properties were investigated. FTIR spectrum indicated an ${alpha}C_3N_4$ peak in the films. The carbon nitride film deposited on Si substrate had a nano-structured surface morphology. The grain size was about 20 nm and the deposition rate was $1.7{\mu}m/hr$. When the $N_2/Ar$ ratio was 3/7, the level of nitrogen incorporation was 34.3 at%. The film had a low dielectric constant. The metal-insulator-semiconductor (MIS) capacitors that the carbon nitride was deposited as insulators, exhibited a typical C-V characteristics.