• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.609-612
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• 2002

In this study, the electrical properties were investigated for the deposited Ba,Sr)(Nb,Ti)$O_3$[BSNT] thin films grown on $Pt/TiO_2/SiO_2/Si$ substrate by RF sputtering method. The structural properties of the BSNT thin films affected by the $Ar/O_2$ rates were investigated. In the case of the BSNT thin films deposited with condition of 60/40$(Ar/O_2)$ ratio, the $BaTiO_3$, $SrTiO_3$ and $BaNbO_3$ phases were showed. The composition ratio of Nb and Ti in the BSNT thin films were nearly equivalent. Also, in the BSNT thin films deposited with condition of 60/40 and 80/20$(Ar/O_2)$ ratios, the composition of Ba, Sr, Nb and Ti were relatively uniform. The Ba, Sr, Nb and Ti in the BSTN thin films were not diffused into the Pt layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.193-197
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• 1996

BaTiO$_3$films in pure Ar atmosphere were prepared by RF sputtering method at low substrate temperature(100$^{\circ}C$). The structural and crystallographic properties were studied with deposition conditions and annealing methodes. Deposition rates and structural properties of BaTiO$_3$ thin filles were investigated by the SEM and X-ray diffraction. The chemical composition of BaTiO$_3$ thin films grown on Si(100) wafer was studied by tole EDS and EPHA. The optimised Ar pressure and RF power were 8[mtorr] and 180[W], respectively. The thickness of BaTiO$_3$ thin films deposited at optimised conditions was ∼3400[${\AA}$], and the dielectric constant of the thin films heat-treated at 750[$^{\circ}C$] for 1[hr] was 259.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권11호
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• pp.556-560
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• 2004

In this paper, thermal and structural properties of epoxy/elastomer blend were measured by DSC, TGA and FESEM. Specimens were made of dumbbell forms by the ratio of 5, 10, 15, and 20[phr] by changing elastomer content. The measuring temperature ranges of DSC were from -20[℃] to 150[℃] and heating rate was 4[℃/min]. And the measuring temperature ranges of TGA were from 0[℃] to 800[℃], and heating rate was 5[℃/min]. Also we observed structure of specimens through FESEM with magnification of 1000 times and voltage of 15[kV] by breaking quenched specimens. As experimental results, we could know that thermal and structural properties were improved according to decrease of elastomer content. Because it increased glass transition temperature, high temperature and structure of elastic epoxy.

• 한국전기전자재료학회논문지
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• 제18권7호
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• pp.600-604
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• 2005

We studied that structural and optical properties of ZnO films depend on oxygen contents. ZnO films were deposited on Si (111) substrates at room temperature by rf sputtering system and the thickness of films was 100 nm. The ZnO films were annealed in thermal furnace for 2 h at 800 and $900^{\circ}C$ in $H_2O,\;N_2$, and air ambient gases to control oxygen contents. We used AES, PL, XRD, AFM. As our result, crystal quality and luminescence improved until O/Zn is 1. However, when O/Zn ratio Is larger than 1, the structural and optical properties were getting worse.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.46-47
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• 2006

Ga-doped ZnO nanowires have been synthesized by pulsed laser deposition (PLD) in furnace on gold coated (0001) sapphire substrates. The effect of repetition rate on structural and optical properties of Ga-doped ZnO nanowires are investigated. By controlling repetition rate, the diameter of nanowires is varied between about 60 and 100 nm, and the length of nanowires is varied between about 2 and 4 um. The X-ray diffraction (XRD) reveals the structural defects induced by the Ga doping. The room temperature photoluminescence (PL) spectra of Ga-doped ZnO nanowires show strong UV emission between 382.394 and 385.279 nm with negligible visible emission.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.183-186
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• 1996

BaTiO$_3$thin films were deposited on Pt/SiO$_2$/Si substrates by RF sputtering technique. The structural and crystallographic properties were studied with deposition conditions and annealing temperatures. Deposition rates and structural properties of BaTiO$_3$thin films were investigated by the SEM, XRD and AFM. The thickness of BaTiO$_3$thin films deposited with optimized conditions was 5200[$\AA$]. The grain size was found to increase remarkably with increasing sputtering power and independent on the sputtering pressure.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1246_1247
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• 2009

Effects of hydrogen and oxygen additives on structural, optical, and electrical properties of ZnO films were extensively examined. ZnO films were deposited using RF sputtering by varying the gas mixing ratio of $H_2$ and $O_2$. Optical transmittances at visible region, electrical resistivities, and micro-structures of ZnO films were characterized in terms of the kind and amount of additive gases. It was observed that the material properties of ZnO films required for their use in transparent thin film transistors, such as approximately $10^3{\Omega}cm$ in resistivity and higher than 85% in transmittance, can be achieved by controlling the gas mixing ratio of $O_2/H_2$ (sccm) in the range of 2/2~2/8.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.304-307
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• 1999

The Mg($_{1-x}$ )S $r_{x}$Ti $O_3$(x=0.1,0.2,0.3) ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with calcining temperature and composition ratio by XRD and DT-TGA. Increasing the calcining temperature from 80$0^{\circ}C$ to 100$0^{\circ}C$, second phase was decreased and average particle size was increased. The SrTi $O_3$ ceramics of calcined at 100$0^{\circ}C$ had a structure of polycrystalline perovskite without the secondary phases. The average particle size of the $Mg_{0.9}$S $r_{0.1}$Ti $O_3$ ceramics calcined at 100$0^{\circ}C$ were 0.67${\mu}{\textrm}{m}$..>......

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.313-314
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• 2005

$PbTiO_3$ and PZT(52/48) powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PT/PZT(52/40) heterolayered thick films were fabricated by the screen-printing method on Pt/$Al_2O_3$ substrates. The structural properties such as DTA, X-ray diffraction and microstructure, were examined as a amount of the PbO-$PbF_2$ flux. In the X-ray diffraction analysis, PZT(52/48) thick films showed a perovskite polycrystalline structure without a pyrochlore phase.

• 대한전자공학회논문지
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• 제25권9호
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• pp.1060-1067
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• 1988

In this paper, we have investigated the effects of rapid thermal process on the electrical and structural properties of silicon films. It was shown that required times and temperature for the successful activation of dopants (Boron, Phosphorus:5E15atoms/cm\ulcorner were above 1000\ulcorner, 10sec, respectively. The typical resistivities of films deposited below 600\ulcorner were in the range of 1.0 E-3ohm-cm which was 20-30% lower than that of initially polycrystalline silicon depositd above 600\ulcorner. After rapid thermal process at high temperature above 1000\ulcorner, the films did not reveal any change in resistivity due to the dopant segregation, and better electrical conductivity could be obtained by increasing the process time. The grain growth by RTA treatment was more salient in the case of the doped amorphous than that of initially polycrystalline. The surface of the films also preserved the higher structural perfection and surface smoothness.