• Transactions of Materials Processing
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• v.24 no.3
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• pp.187-193
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• 2015

The objective of the current study is to determine cross-sectional profile of intermediate dies in order to improve the plastic strain homogeneity which directly affects not only the dimensional accuracy but also the mechanical properties of final product by redesigning the intermediate dies using the conventional electric field analysis (EFA) method. Initially, the multi-pass shape wire drawing was designed by using the equivalent potential lines from EFA. The area reduction ratio was calculated from the number of passes in multi-pass shape wire drawing but constrained by the capacity of the drawing machine and the drawing force. In order to compensate for a concentration of strain in a region of the cross section of the wire, the process for multi pass wire drawing from initial round material to an intermediate die was redesigned again using the electric field analysis. Both drawing process designs were simulated by the finite element method in which the strain distribution and standard deviation plastic strain of the cross section of drawn wires were examined.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.535-541
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• 1999

Low-dislocation-density large-diameter GaAs single crystals with low-residual-strain have been strongly required. We have developed dislocation-free 3-inch Si doped GaAs crystals for photonic devices, and low-dislocation-density low-residual-strain 4-inch to 6-inch semi-insulating GaAs crystals for electronic devices by Vertical Bridgman(VB) technique. We confirmed that VB substrates with low-residual-strain have higher resistance against slip-line generation during MBE process. VB-GaAs single crystals show uniform radial profile of resistivity reflecting to the flat solid-liquid interface during the crystal growth. Uniformity of micro-resistivity of VB-GaAs substrate is much better than of the LEC-GaAs substrate, which is due to the low-dislocation-density of VB-GaAs single crystals.

• Tribology and Lubricants
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• v.18 no.3
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• pp.187-193
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• 2002

The half-value breadth off-ray diffraction profile line is generally used for a factor in nondestructive hardness measuring method of steel. In this paper, the problem in using the half-value breadth for the hardness measuring method is evaluated in strain hardened steel. And new hardness measuring method using residual stress is proposed X-ray diffraction test after rolling contact fatigue test of ball bearing with inner race of various hardness are carried out to measure the distribution of residual stress and half-value breadth from surface. The result of this study shows that there is little correlation between half-value breadth and hardness in the higher strength region and in the region increasing the hardness by strain hardening. But the magnitude of residual stress on/under race after rolling contact fatigue test becomes clearly to be correlative with hardness. Thus, it is concluded that the hardness of strain hardened steel can be estimated by this relationship between residual stress and hardness.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.129-157
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• 1999

Low-dislocation-density large-diameter GaAs single crystals with low-residual-strain have been strongly required. We have developed dislocation-free 3-inch Si-doped GaAs crystals for photonic devices [1], and low-dislocation-density low-residual-strain 4-inch to 6-inch [2, 3] semi-insulating GaAs crystals for electronic devices by Vertical Boat (VB) technique. We confirmed that VB substrates with low-residual-strain have higher resistance against slip-line generation during MBE process. VB-GaAs single crystals show uniform radial profile of resistivity reflecting to the flat solid-liquid interface during the crystal growth. Uniformity of micro-resistivity of VB-GaAs substrate is much better than that of the LEC-GaAs substrate, which is due to the low-dislocation-density of VB-GaAs single crystals.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.178-178
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• 1999

Low temperature Si epitaxy can provide flexibility for a device designer to tailor or optimize the device performance. It is better method for controlling the doping thickness, concentration and profile than ion implantation and diffusion. But there is a limited growth thickness in this method. At a given temperature, the film grows epitaxially for a certain limiting thickness(hepi) and becomes amorphous. The transition from crystalline Si to amorphous Si is abrupt. In this study, Si film was deposited by ion beam sputter deposition on Si (0001) above a limiting thickness and measure the strain in the interface between crystalline Si and amorphous Si. The strain was compressive and the maximum value was about 2%.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1936-1938
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• 2002

A tunable fiber laser and the Quadrature Sampling technique are used to construct highly sensitive fiber-optic distributive Bragg grating strain sensor system. By using a wavelength-modulated fiber laser, the variations of strain-dependent Bragg wavelengths are transformed into the variations of time-domain reflection profiles. The locations of profile peaks that correspond to the applied strains are demodulated using a precise wavelength encoder that uses a fiber-optic Mach-Zehnder interferometer and Quadrature Sampling technique. With the extremely high sensitive optical encoder, we could obtain not only high sensitivity, but also very linear responses that was impossible with the conventional techniques. This paper is attempted to report the theoretical and experimental results.

• Transactions of Materials Processing
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• v.1 no.1
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• pp.95-103
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• 1992

The plane strain analysis for simulating the stretch/draw forming operation with an arbitrarily-shaped tool profile is introduced. An implicit, incremental, updated Lagrangian formulation with a rigid-viscoplastic constitutive equation is employed. Contact and friction are considered through the mesh-normal, which compatibly describes arbitrary tool surfaces and FEM meshes without depending on the explicit spatial derivatives of tool surfaces. The linear line elements are used for depicting the formed sheet, based on membrane approximation. The FEM formulation is tested in the sections of automotive inner panel and two-side draw-in. Not only the excellent agreement between measured and computed strains is obtained in the stretched section, but also the numerical stability of formulation is verified in the draw-in section.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.31 no.6 s.261
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• pp.659-664
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• 2007

$Moire\'{e}$ interferometry is a useful technique to assess the reliability of electronic package because $Moire\'{e}$ interferometry can measure the whole-field and real-time deformations. The shear strain of a small crack site is important to the reliability assessment of electronic package. The optical limitation of $Moire\'{e}$ interferometry makes ambiguous the shear strain of a small area. An atomic force microscope (AFM) is used to measure the profile of a micro site. High resolution of AFM can apply to the $Moire\'{e}$ technique. AFM $Moire\'{e}$ technique is useful to measure the shear strain of a small area. In this research, the method to accurately measure the deformation of a small area by using AFM $Moire\'{e}$ is proposed. A phase-shifting method is applied to improve the resolution of AFM $Moire\'{e}$.

• International Journal of Railway
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• v.8 no.1
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• pp.1-4
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• 2015

An accurate measurement of the train-track interaction forces is important for track performance evaluation. In the field calibration test as a wheel load measurement process, the calibration system creates a different boundary condition in comparison with that in the train wheel passage. This study aims to evaluate a reliability of the field calibration test in the process of wheel load measurement. Finite element models were developed to compare the deformed shapes, bending moment and shear force profiles on the rail section. The analysis results revealed that the deformed shapes and their associated bending moment profiles on the rail are significantly different in two numerical simulations of the calibration test and the train wheel load passage. However, the shear stress profile on the rail section of the strain gauge installation in the field was almost identical, which may imply that the current calibration test is sufficiently reliable.

• Applied Microscopy
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• v.25 no.2
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• pp.73-79
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• 1995

The oxidation of silicon wafers is an essential step in the fabrication of semiconductor devices. It is known to induce degradation of electrical properties and lattice strain of Si substrate from thermal oxidation process due to charged interface and thermal expansion mismatch from thermally grown SiO, film. In this study, convergent beam electron diffraction technique is employed to directly measure the lattice strains in Si(100) and $4^{\circ}$ - off Si(100) substrates with thermally grown oxide layer at $1200^{\circ}C$ for three hours. The ratios of {773}-{973}/{773}-{953} Higher Order Laue Zone lines were used at [012] zone axis orientation. Lattice parameters of the Si substrate as a function of distance from the interface were determined from the computer simulation of diffraction patterns. Correction value for the accelerating voltage was 0.2kV for the kinematic simulation of the [012]. HOLZ patterns. The change in the lattice strain profile before and after removal of oxide films revealed the magnitudes of intrinsic strain and thermal strain components. It was shown that $4^{\circ}$ -off Si(100) had much lower intrinsic strain as surface steps provide effective sinks for the free Si atoms produced during thermal oxidation. Thermal strain in the Si substrate was in compression very close to the interface and high concentration of Si interstitials appeared to modify the thermal expansion coefficient of Si.