• Title/Summary/Keyword: stopper device

Search Result 10, Processing Time 0.026 seconds

Low Frequency Vibration Energy Harvester Using Stopper-Engaged Dynamic Magnifier for Increased Power and Wide Bandwidth

  • Halim, Miah Abdul;Kim, Dae Heum;Park, Jae Yeong
    • Journal of Electrical Engineering and Technology
    • /
    • v.11 no.3
    • /
    • pp.707-714
    • /
    • 2016
  • We present a piezoelectric energy harvester with stopper-engaged dynamic magnifier which is capable of significantly increasing the operating bandwidth and the energy (power) harvested from a broad range of low frequency vibrations (<30 Hz). It uses a mass-loaded polymer beam (primary spring-mass system) that works as a dynamic magnifier for another mass-loaded piezoelectric beam (secondary spring-mass system) clamped on primary mass, constituting a two-degree-of-freedom (2-DOF) system. Use of polymer (polycarbonate) as the primary beam allows the harvester not only to respond to low frequency vibrations but also generates high impulsive force while the primary mass engages the base stopper. Upon excitation, the dynamic magnifier causes mechanical impact on the base stopper and transfers a secondary shock (in the form of impulsive force) to the energy harvesting element resulting in an increased strain in it and triggers nonlinear frequency up-conversion mechanism. Therefore, it generates almost four times larger average power and exhibits over 250% wider half-power bandwidth than those of its conventional 2-DOF counterpart (without stopper). Experimental results indicate that the proposed device is highly applicable to vibration energy harvesting in automobiles.

Structure Analysis for Damper stopper of Lock-up Clutch (록업 클러치의 댐퍼 스토퍼에 대한 구조해석)

  • Oh, Myung-Seok;Nam, Sang-Heon;Lee, Bong-Gu
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.15 no.4
    • /
    • pp.1865-1870
    • /
    • 2014
  • Torque converter is a complex turbomachine used to transfer power smoothly from an engine to a transmission by lock-up clutch. A torque converter consists of the hydrodynamic clutch device and the lock-up clutch device. The retaining plate and driven plate are part of the lock-up clutch. The lock-up clutch connects directly to achieve the improvement of efficiency and fuel consumption. In this paper, using structure analysis of stress distribution on the shape of the mechanical stopper on retaining plate. The shape of mechanical stopper has effect on the stress distribution of lock-up clutch.

Smart Parking Guidance System based on IoT Car-stoppers (IoT 카스토퍼 기반 스마트 주차안내 시스템)

  • Shim, Dongha;Yang, Ji-Hoon;Son, Jeungki;Han, Seung-Han;Lee, Hyounmin
    • The Journal of the Institute of Internet, Broadcasting and Communication
    • /
    • v.17 no.3
    • /
    • pp.137-143
    • /
    • 2017
  • This paper presents a smart parking guidance system based on IoT car-stoppers. The car-stopper embedding an IoT sensor module has the advantage of easy installation compared to conventional parking sensors buried in ground. The parking status data are transferred to the IoT gateway by the sequential point-to-point communication between the car-stoppers. The data transferred from the IoT gateway are stored in the web server, and parking spaces can be monitored remotely through the Android app in a smart device. An active/sleep cycle method using a watch dog timer is employed to reduce the power consumption of the battery powered car-stopper. The power consumption of the car-stopper is measured to be 80 and 25 mW at the active and sleep mode, respectively. A configuration of ultra-low-power IoT sensor module is proposed to minimize the power consumption in the sleep mode. The operation of the implemented system has been verified in a real-world parking lot.

An Experimental Study on the Performance of Liquid Spill Stopper to Prevent Flood through the Hull Punctures (선박파공으로 인한 선박침수 방지를 위한 파공봉쇄장치 성능의 실험적 연구)

  • Moon, Jung-Hwan;Kim, Jin-Kyeong;Kwon, Ki-Seng;Jung, Kyung-Tae;Yun, Jong-Huwi
    • Journal of Navigation and Port Research
    • /
    • v.37 no.2
    • /
    • pp.149-154
    • /
    • 2013
  • This paper considers the issue of LSS(Liquid Spill Stopper)'s performance verification testing against external resisting force. The importance of the test is to ascertain the possibility of liquid spill stop quickly and efficiently by LSS. The method adopted in this research is the experimental device for puncture's inflow pressure and test the adhesive (magnetic) force on shell plates during the sailing. The major results of the paper are the followings : (a) The performance of LSS against 40 and 100mm diameter puncture was confirmed under 1.0bar. (b) LSS near bow detached first at 20.2 knots. This indicates that LSS can recover the damaged movability needed to naval warships' operation as well as merchant ships.

Study of an innovative two-stage control system: Chevron knee bracing & shear panel in series connection

  • Vosooq, Amir Koorosh;Zahrai, Seyed Mehdi
    • Structural Engineering and Mechanics
    • /
    • v.47 no.6
    • /
    • pp.881-898
    • /
    • 2013
  • This paper describes analytical investigation into a new dual function system including a couple of shear links which are connected in series using chevron bracing capable to correlate its performance with magnitude of earthquakes. In this proposed system, called Chevron Knee-Vertical Link Beam braced system (CK-VLB), the inherent hysteretic damping of vertical link beam placed above chevron bracing is exclusively utilized to dissipate the energy of moderate earthquakes through web plastic shear distortion while the rest of the structural elements are in elastic range. Under strong earthquakes, plastic deformation of VLB will be halted via restraining it by Stopper Device (SD) and further imposed displacement subsequently causes yielding of the knee elements located at the bottom of chevron bracing to significantly increase the energy dissipation capacity level. In this paper first by studying the knee yielding mode, a suitable shape and angle for diagonal-knee bracing is proposed. Then finite elements models are developed. Monotonic and cyclic analyses have been conducted to compare dissipation capacities on three individual models of passive systems (CK-VLB, knee braced system and SPS system) by General-purpose finite element program ABAQUS in which a bilinear kinematic hardening model is incorporated to trace the material nonlinearity. Also quasi-static cyclic loading based on the guidelines presented in ATC-24 has been imposed to different models of CK-VLB with changing of vertical link beam section in order to find prime effectiveness on structural frames. Results show that CK-VLB system exhibits stable behavior and is capable of dissipating a significant amount of energy in two separate levels of lateral forces due to different probable earthquakes.

The Wet and Dry Etching Process of Thin Film Transistor (박막트랜지스터의 습식 및 건식 식각 공정)

  • Park, Choon-Sik;Hur, Chang-Wu
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.13 no.7
    • /
    • pp.1393-1398
    • /
    • 2009
  • Conventionally, etching is first considered for microelectronics fabrication process and is specially important in process of a-Si:H thin film transistor for LCD. In this paper, we stabilize properties of device by development of wet and dry etching process. The a-Si:H TFTs of this paper is inverted staggered type. The gate electrode is lower part. The gate electrode is formed by patterning with length of 8 ${\mu}$m${\sim}$16 ${\mu}$m and width of 80${\sim}$200 ${\mu}$m after depositing with gate electrode (Cr) 1500 ${\AA}$under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photo resistor on gate electrode in sequence, respectively. The thickness of these thin films is formed with a-SiN:H (2000 ${\mu}$m), a-Si:H(2000 ${\mu}$m) and n+a-Si:H (500 ${\mu}$m), We have deposited n-a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. In the fabricated TFT, the most frequent problems are over and under etching in etching process. We were able to improve properties of device by strict criterion on wet, dry etching and cleaning process.

Recent Progress in Organic Thin Film Transistor on the Plastic Substrates

  • Suh, Kyung-Soo;Kang, Seung-Youl;Ahn, Seong-Deok;Oh, Ji-Young;You, In-Kyu;Kim, Gi-Hyun;Baek, Kyu-Ha;Kim, Chul-Am;Hwang, Chi-Sun;KoPark, Sang-Hee;Yang, Yong-Suk;Chung, Sung-Mook;Lee, Jeong-Ik;Do, Lee-Mi;Chu, Hye-Yong;Kang, Kwang-Yong
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2005.07a
    • /
    • pp.61-63
    • /
    • 2005
  • Pentacene based OTFT on PC and PES plastic substrates have been fabricated in a scale of 5 inches. We could get a small OTFT device enough to be applicable for AMOLED by acquiring the at least misalignment margin through a contact aligner. And also we could find out the degradation of device parameter through the integration processes and improve the properties by using a buffer layer as an etch stopper in an active patterning. Through these, the mobility of device is more than about $0.2cm^2/Vs$ and $I_{on}/I_{off}$ is higher than $10^5$.

  • PDF

Reliability Design of MEMS based on the Physics of Failures by Stress & Surface Force (응력 및 표면 고장물리를 고려한 MEMS 신뢰성 설계 기술)

  • Lee, Hak-Joo;Kim, Jung-Yup;Lee, Sang-Joo;Choi, Hyun-Ju;Kim, Kyung-Shik;Kim, J.H.
    • Proceedings of the KSME Conference
    • /
    • 2007.05a
    • /
    • pp.1730-1733
    • /
    • 2007
  • As semiconductor and MEMS devices become smaller, testing process during their production should follow such a high density trend. A circuit inspection tool "probe card" makes contact with electrode pads of the device under test (DUT). Nowadays, electrode pads are irregularly arranged and have height difference. In order to absorb variations in the heights of electrode pads and to generate contact loads, contact probes must have some levels of mechanical spring properties. Contact probes must also yield a force to break the surface native oxide layer or contamination layer on the electrodes to make electric contact. In this research, new vertical micro contact probe with bellows shape is developed to overcome shortage of prior work. Especially, novel bellows shape is used to reduce stress concentration in this design and stopper is used to change the stiffness of micro contact probe. Variable stiffness can be one solution to overcome the height difference of electrode pads.

  • PDF

Feasibility Test of Flat-Type Faraday Cup for Ultrahigh-Dose-Rate Transmission Proton Beam Therapy

  • Sang-il Pak;Sungkoo Cho;Seohyeon An;Seonghoon Jeong;Dongho Shin;Youngkyung Lim;Jong Hwi Jeong;Haksoo Kim;Se Byeong Lee
    • Progress in Medical Physics
    • /
    • v.33 no.4
    • /
    • pp.108-113
    • /
    • 2022
  • Purpose: Proton therapy has been used for optimal cancer treatment by adapting its Bragg-peak characteristics. Recently, a tissue-sparing effect was introduced in ultrahigh-dose-rate (FLASH) radiation; the high-energy transmission proton beam is considered in proton FLASH therapy. In measuring high-energy/ultrahigh-dose-rate proton beam, Faraday Cup is considered as a dose-rate-independent measurement device, which has been widely studied. In this paper, the feasibility of the simply designed Faraday Cup (Poor Man's Faraday Cup, PMFC) for transmission proton FLASH therapy is investigated. Methods: In general, Faraday cups were used in the measurement of charged particles. The simply designed Faraday Cup and Advanced Markus ion chamber were used for high-energy proton beam measurement in this study. Results: The PMFC shows an acceptable performance, including accuracy in general dosimetric tests. The PMFC has a linear response to the dose and dose rate. The proton fluence was decreased with the increase of depth until the depth was near the proton beam range. Regarding secondary particles backscatter from PMFC, the effect was negligible. Conclusions: In this study, we performed an experiment to investigate the feasibility of PMFC for measuring high-energy proton beams. The PMFC can be used as a beam stopper and secondary monitoring system for transmission proton beam FLASH therapy.

The Improvement of Fabrication Process for a-Si:H TFT's Yield (a-Si:H TFT의 수율 향상을 위한 공정 개선)

  • Hur, Chang-Wu
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.11 no.6
    • /
    • pp.1099-1103
    • /
    • 2007
  • TFT's have been intensively researched for possible electronic and display applications. Through tremendous engineering and scientific efforts, a-Si:H TFT fabrication process was greatly improved. In this paper, the reason on defects occurring at a-Si:H TFT fabrication process is analyzed and solved, so a-Si:H TFT's yield is increased and reliability is improved. The a-Si:H TFT of this paper is inverted staggered type TFT. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr). We have fabricated a-SiN:H, conductor, etch-stopper and photo-resistor on gate electrode in sequence, respectively. We have deposited n+a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-slower pattern. The NPR layer by inverting pattern of upper Sate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFT made like this has problems at photo-lithography process caused by remains of PR. When sample is cleaned, this remains of PR makes thin chemical film on surface and damages device. Therefor, in order to improve this problem we added ashing process and cleaning process was enforced strictly. We can estimate that this method stabilizes fabrication process and makes to increase a-Si:H TFT's yield.