• Journal of Power Electronics
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• v.16 no.1
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• pp.297-309
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• 2016

Grid-connected inverters (GCIs) with an LCL output filter have the ability of attenuating high-frequency (HF) switching ripples. However, by using only grid-current control, the system is prone to resonances if it is not properly damped, and the current distortion is amplified significantly under highly distorted grid conditions. This paper proposes a synchronous reference frame equivalent proportional-integral (SRF-EPI) controller in the αβ stationary frame using the parallel virtual resistance-based active damping (PVR-AD) strategy for grid-interfaced distributed generation (DG) systems to suppress LCL resonance. Although both a proportional-resonant (PR) controller in the αβ stationary frame and a PI controller in the dq synchronous frame achieve zero steady-state error, the amplitude- and phase-frequency characteristics differ greatly from each other except for the reference tracking at the fundamental frequency. Therefore, an accurate SRF-EPI controller in the αβ stationary frame is established to achieve precise tracking accuracy. Moreover, the robustness, the harmonic rejection capability, and the influence of the control delay are investigated by the Nyquist stability criterion when the PVR-based AD method is adopted. Furthermore, grid voltage feed-forward and multiple PR controllers are integrated into the current loop to mitigate the current distortion introduced by the grid background distortion. In addition, the parameters design guidelines are presented to show the effectiveness of the proposed strategy. Finally, simulation and experimental results are provided to validate the feasibility of the proposed control approach.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.101-106
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• 2022

In this paper, WBG semiconductor such as SiC and GaN were applied as power switches for LCL circuit that can be applied to satellite power systems and the test results of the LCL circuit are reported. P-channel MOSFET and N-channel MOSFET, which were generally used in the conventional LCL circuit, were applied together to expand the utility of the test results. The design and stability evaluation were performed using a Micro Cap circuit simulation program. For the test circuit, a module using each switch was manufactured, and a total of 5 modules were manufactured and the steady state and transient state characteristics were compared. From the experimental results, the LCL circuit for power supply of the satellite power system constructed in this paper satisfied the constant current and constant voltage conditions under various operating conditions. The P-channel MOSFET showed the lowest efficiency characteristics, and the three N-channel switches of Si, SiC and GaN showed relatively high efficiency characteristics of up to 99.05% or more. In conclusion, it was verified that the on-resistor of the switch had a direct effect on the efficiency and loss characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.406-406
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• 2016

To get high efficiency n-type crystalline silicon solar cells, passivation is one of the key factor. Tunnel oxide (SiO2) reduce surface recombination as a passivation layer and it does not constrict the majority carrier flow. In this work, the passivation quality enhanced by different chemical solution such as HNO3, H2SO4:H2O2 and DI-water to make thin tunnel oxide layer on n-type crystalline silicon wafer and changes of characteristics by subsequent annealing process and firing process after phosphorus doped amorphous silicon (a-Si:H) deposition. The tunneling of carrier through oxide layer is checked through I-V measurement when the voltage is from -1 V to 1 V and interface state density also be calculated about $1{\times}1012cm-2eV-1$ using MIS (Metal-Insulator-Semiconductor) structure . Tunnel oxide produced by 68 wt% HNO3 for 5 min on $100^{\circ}C$, H2SO4:H2O2 for 5 min on $100^{\circ}C$ and DI-water for 60 min on $95^{\circ}C$. The oxide layer is measured thickness about 1.4~2.2 nm by spectral ellipsometry (SE) and properties as passivation layer by QSSPC (Quasi-Steady-state Photo Conductance). Tunnel oxide layer is capped with phosphorus doped amorphous silicon on both sides and additional annealing process improve lifetime from $3.25{\mu}s$ to $397{\mu}s$ and implied Voc from 544 mV to 690 mV after P-doped a-Si deposition, respectively. It will be expected that amorphous silicon is changed to poly silicon phase. Furthermore, lifetime and implied Voc were recovered by forming gas annealing (FGA) after firing process from $192{\mu}s$ to $786{\mu}s$. It is shown that the tunnel oxide layer is thermally stable.