• 조명전기설비학회논문지
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• 제16권2호
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• pp.9-17
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• 2002

본 연구에서는 250[W] MHD 램프용 전자식 안정기를 구성하고 안정기 효율 개선을 위한 설계법을 제안한다. 제안된 안정기는 PFC 및 half-bridge 공진 인버터로 구성되고 음향공명을 피하기 위해 구동주파수 25-35[kHz]에서 스펙트럼 확산법을 채택하였다. PFC 전단에 L-C 필터를 채택하여 고주파 전류가 입력 전원측으로 방출되는것을 억제하고 전해 커패시터에서 발생하는 고주파 충방전 전류를 인덕터를 사용하여 제한하였다. 공진부의 직류전압은 인버터 손실을 줄이기 위해 램프정격 전압의 침두치를 고려하여 결정하였다. 램프의 등가 저항과 공진회로의 특성곡선에서 인버터의 전달함수를 정의하고 램프의 전류를 제어하기 위한 제어기를 설계하였다. 실험으로 250[W] MHD 램프용 전자식 안정기를 제작하였고, 효율 96[%] 및 EMI 표준 EN50081-1을 만족하며 전도성 노이즈는 최대 57[dBuv]를 나타내었다.

• 한국레이저가공학회지
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• 제9권3호
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• pp.1-5
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• 2006

Diffraction grating is the optical device which has periodic pattern. Decorative logotypes is the one of application of diffraction grating. In this paper diffraction grating for decorative logotype is fabricated by dot pattern in stead of line pattern. A metallic mold for diffraction gratings is fabricated with a mode-locked 12 ps Nd:YVO4 laser. Laser pulses with a wavelength of 355nm are irradiated on the surface of NOK 80, a mold material, to generate dot patterns. In order to minimize the dot diameter, laser power is set just above the ablation threshold of NOK 80. Results show that the spectrum from the fabricated mold is good enough for some industrial application

• 한국레이저가공학회:학술대회논문집
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• 한국레이저가공학회 2006년도 추계학술발표대회 논문집
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• pp.114-117
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• 2006

Diffraction grating is the optical device which has periodic pattern. Decorative logotypes is the one of application of diffraction grating. In this paper diffraction grating for decorative logotype is fabricated by dot pattern in stead of line pattern. A metallic mold for diffraction gratings is fabricated with a mode-locked 12 ps $Nd:YVO_4$ laser. Laser pulses with a wavelength of 355nm are irradiated on the surface of NOK 80, a mold material, to generate dot patterns. In order to minimize the dot diameter, laser power is set just above the ablation threshold of NOK 80. Results show that the spectrum from the fabricated mold is good enough for some industrial application.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2007년도 춘계종합학술대회
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• pp.758-761
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• 2007

디지털 신호처리 기술은 음성 및 영상 처리와 스펙트럼 분석 등과 같은 폭넓은 분야에서 활용되고 있다. 이에 따라 디지털 필터가 아날로그 필터를 대신하여 주파수 선택적 연산을 수행하기 위해 사용되고 있으며, 급준한 필터특성을 실현할 수 있다. 비재귀형으로 구성되는 FIR 디지털 필터는 항상 안정하고 선형위상응답 특성을 나타내므로, 데이터 전송과 같이 파형정보를 중요시하는 분야에 사용된다. 그리고 불연속점 부근에서 발생하는 깁스현상을 감소시키기 위해, 창함수 기법을 통해 필터를 설계한다. 따라서 본 논문에서는 FIR 필터의 성능을 향상시키기 위해, 변형된 창함수를 적용하였으며, 시뮬레이션에서 최대부엽의 크기와 천이특성을 이용하여 기존의 방법과 비교하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권5호
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• pp.285-295
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• 1999

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays. They are attractive because of their capability of multi-color emission, and low operation voltage. An approach to realize such device characteristics is to use active layers of lanthanide complexes with their inherent extremely sharp emission bands in stead of commonly known organic dyes. In general, organic molecular compounds show emission due to their $\pi$-$\pi*$ transitions resulting in luminescence bandwidths of about 80 to 100nm. Spin statistic estimations lead to an internal quantum efficiency of dye-based EL devices limited to 25%. On the contrary, the fluorescence of lanthanide complexes is based on an intramolecular energy transfer from the triplet of the organic ligand to the 4f energy states of the ion. Therefore, theoretical internal quantum efficiency is principally not limited. In this study, Powders of TPD, $Eu(TTA)_3(phen) and AlQ_3$ in a boat were subsequently heated to their sublimation temperatures to obtain the growth rates of 0.2~0.3nm/s. Organic electrolumnescent devices(OELD) with a structure of $glass substrate/ITO/Eu(TTA)_3(phen)/AI, glass substrate/ITO/TPD/Eu(TTA)_3(phen)/AI and glass substrate/ITO/TPD/Eu(TTA)_3(phen)/AIQ_3AI$ structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, $Eu(TTA)_3(phen)$ as an emitting material, and Tris(8-hydroxyquinoline)Aluminum$(AlQ_3)$ as an electron transporting layer. Electroluminescent(EL) and current density-voltage(J-V) characteristics of these OELDs with various thickness of $Eu(TTA)_3(phen)$ layer were investigated. The triple-layer structure devices show the red EL spectrum at the wavelength of 613nm, which is almost the same as the photoluminescent(PL) spectrum of $Eu(TTA)_3(phen)$.It was found from the J-V characteristics of these devices that the current density is not dependent on the applied field, but on the electric field.