• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.2
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• pp.137-144
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• 2001

In this paper, a state assignment algorithm was proposed to reduce power consumption in control-flow oriented finite state machines. The Markov chain model is used to reduce the switching activities, which closely relate with dynamic power dissipation in VLSI circuits. Based on the Markov probabilistic description model of finite state machines, the hamming distance between the codes of neighbor states was minimized. To express the switching activities, the cost function, which also accounts for the structure of a machine, is used. The proposed state assignment algorithm is tested with Logic Synthesis Benchmarks, and reduced the cost up to 57.42% compared to the Lakshmikant's algorithm.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.4
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• pp.329-335
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• 2011

In this paper, a dual-band integer-N frequency divider is proposed for 2.4/5.2 GHz multi-standard wireless local area networks. It consists of a multi-modulus imbalance phase switching prescaler and two all-stage programmable counters. It is able to provide dual-band operation with high resolution while maintaining a low power consumption. This frequency divider is integrated with a 5 GHz VCO for multi-standard applications. Measurement results show that the VCO with frequency divider can work at 5.2 GHz with a total power consumption of 22 mW.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.48 no.9
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• pp.467-475
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• 1999

This paper presents an analysis method of a forward converter, using both the finite element method considering the external circuit and a state variables equation. The converter operates at 50kHz and its one period is divided into two modes for the simplicity of the analysis. In the first mode, the switching transistor turns on and an input power is transferred into the load by the electromagnetic conversion action of a ferrite transformer. In the second mode, the switching transistor turns off and the stored energy in an inductor is delivered to the load, and the transformer core is demagnetized by the reset winding current. In this paper, time-stepping finite element method taking into account the on-state electrical circuit of the converter in used to analyze both the electrical circuit and electromagnetic field of the magnetic device during the first mode and the demagnetization period of the transformer core. Then a state variables equation for the circuit which the inductor current flows is constituted and solved during the second mode. As a result, the simulation results have been good agreement with the results obtained form experiment.

• Journal of Power Electronics
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• v.15 no.1
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• pp.86-95
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• 2015

An active clamp high step-up boost converter with a coupled inductor is proposed in this paper. In the proposed strategy, a coupled inductor is adopted to achieve a high voltage gain. The clamp circuit is included to achieve the zero-voltage-switching (ZVS) condition for both the main and clamp switches. A rectifier composed of a capacitor and a diode is added to reduce the voltage stress of the output rectifier diode. As a result, diodes with a low reverse-recovery time and forward voltage-drop can be utilized. Since the voltage stresses of the main and clamp switches are far below the output voltage, low-voltage-rated MOSFETs can be adopted to reduce conduction losses. Moreover, the reverse-recovery losses of the diodes are reduced due to the inherent leakage inductance of the coupled inductor. Therefore, high efficiency can be expected. Firstly, the derivation of the proposed converter is given and the operation analysis is described. Then, a steady-state performance analysis of the proposed converter is analyzed in detail. Finally, a 250 W prototype is built to verify the analysis. The measured maximum efficiency of the prototype is 95%.

• The Transactions of the Korean Institute of Power Electronics
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• v.22 no.2
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• pp.102-108
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• 2017

Proper design guides are proposed for a practical dual-active bridge (DAB) converter based on the mathematical model on the steady state. The DAB converter is popular in bidirectional application due to its zero-voltage capability and easy bidirectional operation for seamless control, high efficiency, and performance. Some design considerations are taken to overcome the limitation of the DAB converter. The practical design methodology of power stage is discussed to minimize the conduction and switching losses of the DAB converter. Small-signal model and frequency response are derived and analyzed based on the generalized average method, which considers equivalent series resistance, to improve the dynamics, stability, and reliability with voltage regulation of the practical DAB converter. The design of closed-loop control is discussed by the derived small-signal model to obtain the pertinent gain and phase margin in steady-state operation. Experimental results of a 3.3 kW prototype of DAB converter demonstrate the validity and effectiveness of the proposed methods.

• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.1066-1074
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• 2015

This paper presents the reverse recovery characteristic according to the change of switching states when Si diode and SiC diode are used as clamp diode and proposes a method to minimize the switching loss containing the reverse recovery loss in the neutral-point-clamped inverter at low modulation index. The previous papers introduce many multiple circuits replacing Si diode with SiC diode to reduce the switching loss. In the neutral-point-clamped inverter, the switching loss can be also reduced by replacing device in the clamp diode. However, the switching loss in IGBT is large and the reduced switching loss cannot be still neglected. It is expected that the reverse recovery effect can be infrequent and the switching loss can be considerably reduced by the proposed method. Therefore, it is also possible to operate the inverter at the higher frequency with the better system efficiency and reduce the volume, weight and cost of filters and heatsink. The effectiveness of the proposed method is verified by numerical analysis and experiment results.

• Journal of Power Electronics
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• v.16 no.2
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• pp.490-497
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• 2016

The analysis of the switch status of each unit module of a cascaded multi-level inverter reveals that the working condition of the switch of a chopper arm causes unnecessary switching under the conventional unipolar sinusoidal pulse width modulation (SPWM). With an increase in the number of cascaded multilevel inverters, the superposition of unnecessary switching gradually occurs. In this work, we propose an improved SPWM strategy to reduce switching in cascaded multilevel inverters. Specifically, we analyze the switch state of the switch tube of a chopper arm of an H-bridge unit. The redundant switch is then removed, thereby reducing the switching frequency. Unlike the conventional unipolar SPWM technique, the improved SPWM method greatly reduces switching without altering the output quality of inverters. The conventional unipolar SPWM technique and the proposed method are applied to a five-level inverter. Simulation results show the superiority of the proposed strategy. Finally, a prototype is built in the laboratory. Experimental results verify the correctness of the proposed modulation strategy.

• Journal of Korea Multimedia Society
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• v.16 no.1
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• pp.75-86
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• 2013

This paper presents a technique to implement embedded systems using interrupts of the one-chip microcontroller with many peripherals based on a multiple finite state machines model. The multiple finite state machine model utilizes the structure of FSMD used for hardware design and the features of flow control by interrupts. The main finite state machine corresponds to the main program and the sub-state machines corresponds to the interrupt subroutines. Therefore, interrupts from the peripherals can be processed immediately in the sub-state machines. The request and reply variables are used to interface between the finite state machines. Additional operating system is not necessary for the context switching between the main state machine and the sub-state machine, because the flow-control caused by interrupt can be replaced with the switching. An embedded system modeled on multiple finite state machine with ASM charts can be easily implemented by the conversion of ASM charts into C-language programs. This implementation technique can be easily adopted to the hardware oriented embedded systems because of the detail description of the model and the fast response to the interrupt events in the sub-state machine.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.10.1-10.1
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• 2007