• Title/Summary/Keyword: stack-structure

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NEIGHBORHOOD SPACES AND P-STACK CONVERGENCE SPACES

  • Park, Sang-Ho
    • East Asian mathematical journal
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    • v.21 no.1
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    • pp.27-39
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    • 2005
  • We will define p-stack convergence spaces and show that each neighborhood structure is uniquely determined by p-stack convergence structure. Also, we will show that p-stack convergence spaces are a generalization of neighborhood spaces.

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Design of ESD Protection Circuit with improved Snapback characteristics Using Stack Structure (스텍 구조를 이용한 향상된 스냅백 특성을 갖는 ESD 보호회로 설계)

  • Song, Bo-Bae;Lee, Jea-Hack;Kim, Byung-Soo;Kim, Dong-Sun;Hwang, Tae-Ho
    • Journal of IKEEE
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    • v.25 no.2
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    • pp.280-284
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    • 2021
  • In this paper, a new ESD protection circuit is proposed to improve the snapback characteristics. The proposed a new structure ESD protection circuit applying the conventional SCR structural change and stack structure. The electrical characteristics of the structure using penta-well and double trigger were analyzed, and the trigger voltage and holding voltage were improved by applying the stack structure. The electron current and total current flow were analyzed through the TCAD simulation. The characteristics of the latch-up immunity and excellent snapback characteristics were confirmed. The electrical characteristics of the proposed ESD protection circuit were analyzed through HBM modeling after forming a structure through TCAD simulator.

A Case Study on Explosive Demolition of a the Industrial Stack (산업용 연돌 발파해체 시공사례)

  • Park, Hoon;Nam, Sung-Woo;Noh, You-Song;Kim, Suk-Weon;Suk, Chul-Gi
    • Explosives and Blasting
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    • v.40 no.2
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    • pp.15-24
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    • 2022
  • Recently, the demand of demolition for the unnecessary industrial structure is increasing due to deterioration tendency and the issue of demolition is becoming a major highlight. The restoration of the dismantled industrial site to its original natural state was currently underway. This execution case was intented to describe an application of the felling method one of the explosive demolition method to the demolition of the industrial stack. This stack was 150m high, a composite structure in which the outer wall of the stack was a reinforced concrete shell structure and internal stovepipe was a steel shell structure. As as result of the explosive demolition, the stack had collapsed precisely according to estimated direction. And the explosive demolition was completed without causing any damage to surrounding facilities.

Multi-stack Technique for a Compact and Wideband EBG Structure in High-Speed Multilayer Printed Circuit Boards

  • Kim, Myunghoi
    • ETRI Journal
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    • v.38 no.5
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    • pp.903-910
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    • 2016
  • We propose a novel multi-stack (MS) technique for a compact and wideband electromagnetic bandgap (EBG) structure in high-speed multilayer printed circuit boards. The proposed MS technique efficiently converts planar EBG arrays into a vertical structure, thus substantially miniaturizing the EBG area and reducing the distance between the noise source and the victim. A dispersion method is presented to examine the effects of the MS technique on the stopband characteristics. Enhanced features of the proposed MS-EBG structure were experimentally verified using test vehicles. It was experimentally demonstrated that the proposed MS-EBG structure efficiently suppresses the power/ground noise over a wideband frequency range with a shorter port-to-port spacing than the unit-cell length, thus overcoming a limitation of previous EBG structures.

Development of PEMFC stack for Fuelcell vehicle (자동차용 PEMFC 스택 개발)

  • Shin Hwansoo;Cho Gyutaek;Seong Yongjin;Kim Yungmin;Seo Jinsik;Kim Saehoon
    • 한국신재생에너지학회:학술대회논문집
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    • 2005.06a
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    • pp.374-377
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    • 2005
  • Hyundai motor company has designed a above 50kW-class PEMFC stack for Fuelcell vehicle based on SUV. Hyundai increased the power density of the stack through the optimized flowfield of bipolar plate, manifold structure, and improvement of sealing, etc. Also, Gas to Gas humidifier was adopted in fuelcell system to reduce the system humidification load, it had been proven by short stack test. Components of stack, bilpolar plate, manifold, were analyzed through the computer simulation, so temperature and pressure distribution in the components and system were improved. This stack tested in Bread Board which was organized similar to real vehicle system.

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An Experimental Study of Short Stack on the Performance of the Proton Exchange Membrane Fuel Cell for the Residential Power generation (소형 모듈 스택을 이용한 가정용 연료전지 성능의 실험적 고찰)

  • Choi, Won-Seok;Kim, Yong-Mo;Yu, Sang-Seok;Lee, Young-Duk;Hong, Dong-Jin;Ahn, Kook-Young
    • 한국신재생에너지학회:학술대회논문집
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    • 2008.05a
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    • pp.21-24
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    • 2008
  • Proton Exchange Membrane Fuel Cell (PEMFC) is an attractive candidate for residential power generator due to fast start-up and stop, high efficiency, low emission, and high power density. In this study, we employ short module stack to understand the performance of the unit cell of the stack in terms of operating temperatures. To simulate the practical fuel cell stack of residential power generator, the structure and active area of the short module stack is kept the same as that of the practical fuel cell. The results shows that the electric potential of short module stack is different from the number of cells times the potential of unit cell because of cell-to-cell variation.

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A Study on PMOS Embedded ESD Protection circuit with Improved Robustness for High Voltage Applications. (향상된 감내특성을 갖는 PMOS 삽입형 고전압용 ESD 보호회로에 관한 연구)

  • Park, Jong-Joon
    • Journal of IKEEE
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    • v.21 no.3
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    • pp.234-239
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    • 2017
  • In this paper, we propose an ESD (Electrostatic Discharge) protection circuit based on a new structure of SCR (Silicon Controlled Rectifier) embedded with PMOS structure. The proposed ESD protection circuit has a built-in PMOS structure and has a latch-up immunity characteristic and an improved tolerance characteristic. To verify the characteristics of the proposed ESD protection circuit and to analyze its operating characteristics, we compared and analyzed the characteristics of the existing ESD protection circuit using TCAD simulation. Simulation results show that the proposed protection ESD protection circuit has superior latch-up immunity characteristics like the existing SCR-based ESD protection device HHVSCR (High Holding Voltage SCR). Also, according to the results of the HBM (Human Body Model) maximum temperature test, the proposed ESD protection circuit has a maximum temperature value of 355K, which is about 20K lower than the existing HHVSCR 373K. In addition, the proposed ESD protection circuit with improved electrical characteristics is designed by applying N-STACK technology. As a result of the simulation, the proposed ESD protection circuit has a holding voltage characteristic of 2.5V in a single structure, and the holding voltage increased to 2-STACK 4.2V, 3-STACK 6.3V, 4-STACK 9.1V.

A study on the run-time storage management for recursice and nested structure (Recursive nested 구조를 위한 run-time 기억장소 운영에 관한 연구)

  • 김영택;차윤경
    • 전기의세계
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    • v.31 no.4
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    • pp.281-287
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    • 1982
  • PASCAL has a recursive nested structure and uses deep binding of identifiers. This paper studies the problems and techniques in storage management for PASCAL on the IBM 370 system, and presents run-time storage administration algorithms which use stack scheme and heap efficiently on the view of storage. The stack-scheme was used to implement the feature of recursive nested structure and the heap was used to implement the feature of the dynamic allocation procedure and pointer variable, allowing an additional dynamic storage recovery procedure.

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Nonvolatile memory devices with oxide-nitride-oxynitride stack structure for system on panel of mobile flat panel display

  • Jung, Sung-Wook;Choi, Byeong-Deog;Yi, Jun-Sin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.911-913
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    • 2008
  • In this work, nonvolatile memory (NVM) devices for system on panel of flat panel display (FPD) were fabricated using low temperature polycrystalline silicon (LTPS) thin film transistor (TFT) technology with an oxide-nitride-oxynitride (ONOn) stack structure on glass. The results demonstrate that the NVM devices fabricated using the ONOn stack structure on glass have suitable switching characteristics for data storage with a low operating voltage, a threshold voltage window of more than 1.8 V between the programming and erasing (P/E) states after 10 years and its initial threshold voltage window (${\Delta}V_{TH}$) after $10^5$ P/E cycles.

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A Study on LVTSCR-Based N-Stack ESD Protection Device with Improved Electrical Characteristics (향상된 전기적 특성을 지닌 LVTSCR 기반의 N-Stack ESD 보호소자에 관한 연구)

  • Jin, Seung-Hoo;Woo, Je-Wook;Joung, Jang-Han;Koo, Yong-Seo
    • Journal of IKEEE
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    • v.25 no.1
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    • pp.168-173
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    • 2021
  • In this paper, we propose a new structure of ESD protection device that achieves improved electrical characteristics through structural change of LVTSCR, which is a general ESD protection device. In addition, it applies N-Stack technology for optimized design in the ESD Design Window according to the required voltage application. The N-Well area additionally inserted in the existing LVTSCR structure provides an additional ESD discharge path by electrically connecting to the anode, which improves on-resistance and temperature characteristics. In addition, the short trigger path has a lower trigger voltage than the existing LVTSCR, so it has excellent snapback characteristics. In addition, Synopsys' T-CAD Simulator was used to verify the electrical characteristics of the proposed ESD protection device.