• Transactions of the Korean Society of Machine Tool Engineers
• /
• v.15 no.6
• /
• pp.71-75
• /
• 2006

The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its usage in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. The target of this paper is the analysis of FIB sputtering process according to tilt angle, dwell time and overlap for application of 3D micro and pattern fabrication and to find the effective beam scanning conditions using Taguchi method. Therefore we make the conclusions that tilt angle is dominant parameter for sputtering yield. Burr size is reduced as tilt angle is higher.

• Journal of the Semiconductor & Display Technology
• /
• v.15 no.3
• /
• pp.57-61
• /
• 2016

We have studied the structural, optical and electrical properties of IGZO thin films. The IGZO thin films were deposited on the silicon wafer by RF magnetron sputtering method. The RF power in sputtering process was varied as 15W, 30W, 45W, 60W, 75W, respectively. All of the thin films transmittance in the visible range was above 85%. XRD analysis showed that amorphous structure of the thin films without any peak. The Hall measurements in the low RF power is the high mobility above $10cm^2/V{\cdot}s$ and the low resistvity are obtained in the IGZO thin films.

• Journal of the Korean Magnetics Society
• /
• v.5 no.5
• /
• pp.461-464
• /
• 1995

We have investigated the effects of sputtering Ar gas pressure on magnetic anisotropy of Co/Pt multilayers, where sputtering Ar gas pressure was varied from 2 to 20 mTorr. The surface and volume anisotropies were found to be strongly dependent on sputtering Ar gas pressure. In particular, the surface anisotropy exhibited more than fourfold enhancement as Ar pressure was decreased from 20 to 5 mTorr. We have found that the surface anisotropy was closely correlated with the low-angle x-ray diffraction intensity. We believe that these results are mainly ascribed to the variation of microstructure in the Co/Pt multilayer thin films with sputtering Ar gas pressure.

• Applied Science and Convergence Technology
• /
• v.24 no.5
• /
• pp.162-166
• /
• 2015

Linear ion beams have been introduced for the ion beam treatments of flexible substrates in roll-to-roll web coating systems. Anode layer linear ion sources (300 mm width) were used to make the linear ion beams. Oxygen ion beams having an ion energy from 200 eV to 800 eV used for the adhesion improvement of Cu thin films on PET substrates. The Cu thin films deposited by a conventional magnetron sputtering on the oxygen ion beam treated PET substrates showed Class 5 adhesion defined by ASTM D3359-97 (tape test). Argon ion beams with 1~3 keV used for the ion beam sputtering deposition process, which aims to control the initial layer before the magnetron sputtering deposition. When the discharge power of the linear ion source is 1.2 kW, static deposition rate of Cu and Ni were 7.4 and $3.5{\AA}/sec$, respectively.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.13 no.3
• /
• pp.252-258
• /
• 2013

In this paper, a thermally stable nickel silicide technology using the co-sputtering of nickel and titanium atoms capped with TiN layer is proposed for nano-scale metal oxide semiconductor field effect transistor (MOSFET) applications. The effects of the incorporation of titanium ingredient in the co-sputtered Ni layer are characterized as a function of Ti sputtering power. The difference between the one-step rapid thermal process (RTP) and two-step RTP for the silicidation process has also been studied. It is shown that a certain proportion of titanium incorporation with two-step RTP has the best thermal stability for this structure.

• Journal of the Semiconductor & Display Technology
• /
• v.9 no.2
• /
• pp.111-116
• /
• 2010

In a large area magnetron sputtering system, which is under the influence of high heat load from the plasma, it is necessary to use the effective water cooling in order to maintain the proper deposition performance and the economic use of target materials. A series of three-dimensional numerical simulations are carried out on the simplified model of the large area magnetron sputtering system with the cooling plate that includes the U-shaped water channel. The analysis is focused on the effects of water channel geometry, cooling water flowrate, thermal conductivity of target material, and the degree of target erosion on the cooling performance of cooling plate, which is represented by the temperature distribution of target material.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
• /
• 1999.10a
• /
• pp.197-203
• /
• 1999

Stainless steels in general has passive film having strong corrosion resistance on surface. Therefore it must be necessarily removed by etching in mixing solution of sulfuric and chloric acid before Nitriding treatment. But in the ion nitriding, nitride layer was easily formed because passive film was removed without difficult by sputtering effect. The removal extent of these passive films was greatly effected by gas mixing ratios and pressure and holding times of pre sputtering factors in pre sputtering stage. As a results of experiment it has been known that pre sputtering pressure and holding time was not nearly effective on the formation behavior of nitride layer. But when A/H2 gas mixing ratios was 1/2 (vol%) was the most effective of the all pre sputtering conditions. It was resulted from the combination of mechanical reaction byArgon bombardment and chemical reaction by reduction of hydrogen on the passive film.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2008.12a
• /
• pp.51.2-51.2
• /
• 2008

• Journal of the Korean Society for Precision Engineering
• /
• v.25 no.3
• /
• pp.23-31
• /
• 2008

• Journal of Magnetics
• /
• v.8 no.4
• /
• pp.146-148
• /
• 2003

Multilayered films of Co/Pd have been studied as a candidate material for a high density perpendicular recording medium due to higher anisotropy energy. However, high exchange coupling among grains results in large transition noise. To reduce the exchange coupling and grain size, addition of 3rd elements and physical separation of grains have been attempted. In the present paper, effects of sputtering pressure, Co sublayer thickness and Pd underlayer thickness on magnetic properties and microstructures were studied. It was found that by increasing sputtering pressure from 5 mTorr to 25 mTorr, Ms decreased to one half and coercivity increased more than 5000 Oe. The increase of the coercivity is associated with physical separation of grains by high pressure sputtering. Ms per volume of Co for Co/Pd multilayered film deposited at 25 mTorr shows continuous decrease with increasing Co sublayer thickness. This was related to void formation and intermixing of Co/Pd interface. Also, effect of Pd underlayer thickness on magnetic properties will be discussed.