• 마이크로전자및패키징학회지
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• 제29권4호
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• pp.49-53
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• 2022

본 연구는 최적화된 전기발광 성능을 가진 양자점 전계 발광 다이오드 소자를 제작하기 위해 RF sputtering 기법으로 Zn_0.85Mg_0.15O 박막을 전자수송층으로 적용하였다. 일반적으로 양자점 전계 발광 다이오드에서 ZnO 나노입자는 적절한 에너지 준위를 가지고 있어 전자 이동도가 빠르고 용액 처리가 용이하다는 장점으로 전자 수송층으로 널리 사용되는 재료이다. 그러나, 용액형 ZnO 나노입자의 불안정성 문제는 아직 해결되지 않고 있다. 이를 해결하기 위해 본 연구에서는 ZnO에 15 % Mg을 도핑한 ZnMgO 박막을 RF sputtering법으로 제작하고 전자수송층으로 적용한 소자를 최적화하였다. 최적화된 ZnMgO 박막을 이용한 소자는 최대 휘도 15,972 cd/m², 전류효율 7.9 cd/A를 보였다. Sputtering ZnMgO 박막 기반 양자점 전계 발광 다이오드 소자는 용액형 ZnO 나노입자의 문제를 해결하고 미래 디스플레이 소자 제작 기술의 적용 가능성을 확인하였다.

• 센서학회지
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• 제24권4호
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• pp.219-223
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• 2015

Indium free consisting of three alternating layers GTO/Ag/GTO has been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting electrodes and the structural, electrical and optical properties of the gallium tin oxide (GTO) films were carefully studied. The gallium tin oxide thin films deposited at room temperature are found to have an amorphous structure. Hall Effect measurements show a strong influence on the conductivity type where it changed from n-type to p-type at $700^{\circ}C$. GTO/Ag/GTO multilayer structured electrode with a few nm of Ag layer embedded is fabricated and show the optical transmittance of 86.48% in the visible range (${\lambda}$ = 380~770 nm) and quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$. The resultant power conversion efficiency of 2.60% of the multilayer based OPV (GAG) is lower than that of the reference commercial ITO. GTO/Ag/GTO multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

• 한국표면공학회지
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• 제47권4호
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• pp.174-180
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• 2014

In this study, TiAlSiN coatings have been successfully synthesized on stainless steel and tungsten carbide substrate by a hybrid coating method employing a cathodic arc and a magnetron sputtering source. TiAl and Si target were vaporized with the cathodic arc source and the magnetron sputtering source, respectively. Process gas was the mixture of nitrogen and argon gas. With the increase of Si content, the crystallinity and the grain size of TiAlSiN film was decreased. At the Si content of more than 8 at.%, grain size of TiAlSiN was saturated at around 2 nm. The hardness value of the TiAlSiN film increased with incorporation of Si, and had the maximum value of ~ 3,233 Hv at the Si content of 9.2 at.%. The oxidation resistance of TiAlSiN film was enhanced with the increase of Si content.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.92-92
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• 2011

IZTO and ITO thin films with a thickness of 200nm were deposited on Corning glass substrate to investigate the effects of substrate temperature on their electrical and optical properties by using pulsed DC magnetron sputtering with a sintered ceramic target of IZTO (In2O3 70 wt.%, ZnO 15 wt.%, SnO2 15 wt.%) and ITO (In2O3 90 wt.%, SnO2 10 wt.%). We investigated the structural, electrical, and optical properties of IZTO and ITO films. The structural and electrical properties of both films are sensitive on the substrate temperature. As the substrate temperature is increased, the electrical resistivity of ITO films is improved, but that of IZTO film increase over than $100^{\circ}C$. All IZTO and ITO thin films have good optical properties, which showed an average of transmittance over 80%. As a result, IZTO films can be a possible material for flexible display due to the low processing temperature.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.93-93
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• 2011

The Indium Zinc Tin Oxide (IZTO) and Indium Tin Oxide (ITO) thin films are grown on PI substrate at different substrate temperature by pulsed DC magnetron sputtering with a sintered ceramic target of IZTO (In2O3 70 wt.%, ZnO 15 wt.%, SnO2 15 wt.%) and ITO (In2O3 90wt.%, SnO2 10wt.%). The structural, electrical, and optical properties are investigated. The IZTO thin films deposited at low temperature showed relatively low electrical resistivity compared to ITO thin films deposited at low temperature. As a result, we could prepare the IZTO thin films with the resistivity as low as $5.6{\times}10^{-4}({\Omega}{\cdot}m)$. Both of the films deposited on PI substrate showed an average transmittance over 80% in visible range (400.800nm). Overall, IZTO thin film is a promising candidate as an alternative TCO material to ITO in flexible and OLED devices.

• 반도체디스플레이기술학회지
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• 제9권1호
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• pp.29-33
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• 2010

Recently, the growth of ZnO thin film on glass substrate has been investigated extensively for transparent thin film transistor. We have studied the phase transition of ZnO thin films from metal to semiconductor by changing RF power in the deposition process by RF magnetron sputtering system. The structural, electric, and optical properties of the ZnO thin films were investigated. The film deposited with 75 watt of RF power showed n-type semiconductor characteristic having suitable resistivity $-3.56\;{\times}\;10^{+1}\;{\Omega}cm$, carrier concentration $-2.8\;{\times}\;10^{17}\;cm^{-3}$, and mobility $-0.613\;cm^2V^{-1}s^{-1}$ while other films by 25, 50, 100 watt of RF power closed to metallic films. From the surface analysis (AFM), the number of crystal grain of ZnO thin film increased as RF power increased. The transmittance of the film was over 88% in the visible region regardless of the change in RF power.

• 열처리공학회지
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• 제25권1호
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• pp.1-5
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• 2012

The purpose of this study is to prepare a high strength fiberglass reinforced metal. Aluminum covering was carried out over carbon materials such as carbon fiber in order to increase their wettability to molten metals such as aluminum. A sputtering apparatus with a cylindrical target was fabricated to carry out the covering. Sputtering was caused by glow discharge between the target and the two anode plates attached to its top and bottom. As the substrate for preliminary test, a thin carbon wire was used instead of carbon fiber, and the wire was placed at the central axis of the target. Aluminium coating was formed on the whole surface of the substrate. The formation rate and structure of coating were varied by controlling the electrical potential of substrate. When the substrate was electrically isolated, coating with columnar structure was formed with a formation rate of $15{\mu}m/hr$. In case of grounded substrate, coating with amorphous structure was formed with a formation rate of $7{\mu}m/hr$.

• 한국표면공학회지
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• 제38권2호
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• pp.49-54
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• 2005

Flexible copper clad laminates (FCCL) fabricated by sputtering has advantages in fine pitch etching and dimensional accuracy than previous casting or laminating type FCCL, But its lower adhesion is inevitable technical challenge to solve for commercializing it. Chromium (Cr) which strongly reacts with O moiety was used as tie-coating layer in order to improve low adhesion between copper (Cu) and polyimide (PI). Sputtering raw polyimide (SRPI) and casting raw polyimide (CRPI) were used as substrates at this research. PI was pretreated by plasma before sputtering, and each sample was varied with RF power and Cr thickness on sputtering. Peel strength of the FCCL on SRPI was higher than that on CRPI. Adhesion had maximum value when 10 nm of Cr was deposited on SRPI by RF power of 50 W. It seems to be by the formation of Cu-Cr-O solid solution at the metal-PI interface.

• 반도체디스플레이기술학회지
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• 제15권4호
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• pp.41-45
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• 2016

ITO/GZO double layered thin films were prepared on transparent glass substrates. Ga-doped ZnO(GZO) films were deposited by RF magnetron sputtering using an ZnO:Ga (98: 2 wt%) target. The post deposition annealing process was conducted for 30 minutes at different temperature of 100, 200, 300 and $400^{\circ}C$, respectively. As increase annealing temperature, ITO/GZO double layered thin films show the increment of the prefer orientation of ZnO diffraction peak (002) in the XRD patterns. We obtained Ga-doped ZnO thin films with a lowest resistivity of $1.84{\times}10^{-4}{\Omega}-cm$ at $400^{\circ}C$ and transparency above 80% in visible ranges. The figure of merit obtained in this study means that ITO/GZO double layered thin films which annealed at $400^{\circ}C$ have the highest optoelectrical performance in this study.

• 반도체디스플레이기술학회지
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• 제9권4호
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• pp.77-81
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• 2010

The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering and effects of working pressure and oxygen contents on the electrical properties were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM for the 70mTorr. From the surface analysis (AFM), the number of crystal grain of AZO thin film increased as working pressure increased. The film deposited with 70mTorr of working pressure showed n-type semiconductor characteristic having suitable resistivity $-1.59{\times}10^{-2}{\Omega}cm$, carrier concentration $-10.1{\times}10^{19}cm^{-3}$, and mobility $-4.35cm^2V^{-1}s^{-1}$ while other films by 7 mTorr, 20 mTorr of working pressure closed to metallic films. The films including the oxygen represent stoichiometric composition similar to the oxide. The transmittance of the film was over 85% in the visible light range regardless of the changes in working pressure and oxygen contents.