• Transactions on Electrical and Electronic Materials
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• v.5 no.1
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• pp.11-14
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• 2004

An rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of E${\times}$B field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.787-790
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• 2003

A rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of $E{\times}B$ field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

• Electrical & Electronic Materials
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• v.7 no.6
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• pp.511-519
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• 1994

The effect of the deposition conditions, such as the base pressure, working pressure, sputtering power, pre-sputtering, and deposition thickness in facing targets sputtering system(FTS), on the oxidation of the TbFeCo thin films was studied by investigating the magneto-optical properties as well as oxygen analysis by the AES depth profiles. The results showed that the base pressure did not affect the magnetic properties so much, probably due to the short flight distance of the sputtered particles. At the higher sputtering power and lower working pressure with pre-sputtering the oxidation of TbFeCo thin films was decreased. As the film thickness increased the TbFeCo thin films showed the perpendicular anisotropy from in-plane anisotropy overcoming the oxidation effect at the beginning of the sputtering.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.165-169
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• 2008

It is very important to decompose uniformly the metal film in semiconductor devices process. The thickness uniformity of the ITO film by standard magnetron sputtering system are about $\pm4%\sim\pm5%$ and the center of the wafer is more thick than the edge of the wafer. We designed and made the discharge electrode structure and controlled the direction of sputtering materials in magnetron sputtering system. The thickness uniformity are increased to $\pm0.8\sim1.3%$ in 4" wafer using the new sputtering gun in magnetron sputtering system. In wafer to wafer thickness uniformity, $\pm$5.3% are increased to $\pm$1.5% using the new sputtering gun. The thickness uniformity of the Al film are about $\pm$1.0% using the new sputtering gun in magnetron sputtering system.

• Applied Science and Convergence Technology
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• v.27 no.1
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• pp.1-4
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• 2018

A sputtering-assisted magnetic field system was successfully developed for depositing crystalline Cu thin films at room temperature. This system employs a plasma source and an ion-beam gun with two magnetic field generators, which is covered with sputtering target and the ion-beam gun, simultaneously serving as sputtering plasma and a magnetic field generator. The formation of crystalline Cu thin films at room temperature was dominated by magnetic fields, which was revealed by preliminary experiments. This system can be employed for producing crystalline metal thin films at room temperature.

• Journal of the Semiconductor & Display Technology
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• v.9 no.3
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• pp.23-27
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• 2010

We prepared Al doped ZnO thin film as a top electrode on a glass substrate with a deposited $Alq_3$ for the top emission organic Light emitting device (TEOLED) with facing target sputtering (FTS) method and radio-frequency (RF) sputtering method, respectively. Before the deposition of AZO thin film, we evaporated the $Alq_3$ on glass substrate by thermal evaporation. And we evaluated the damage of organic layer. As a result, PL intensity of $Alq_3$ on grown by FTS method showed higher than that of grown by RF sputtering method, so we found that the FTS showed the lower damage sputtering than RF sputtering. Therefore, we can expect the FTS method is promising the low-damage sputtering system that can be used as a direct sputtering on the organic layer.

• Journal of Information Display
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• v.8 no.3
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• pp.5-10
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• 2007

Twin target sputtering (TTS) system with a configuration of vertically parallel facing Al targets and a substrate holder perpendicular to the Al target plane has been designed to realize a direct Al cathode sputtering on organic light emitting diodes (OLEDs). The TTS system has a linear twin target gun with ladder type magnet array for effective and uniform confinement of high density plasma. It is shown that OLEDs with Al cathode deposited by the TTS show a relatvely lower leakage current density $({\sim}1{\times}10^{-5}mA/cm^2)$ at reverse bias of -6V, compared to that ($1{\times}10^{-2}{\sim}10^{-3}$ $mA/cm^2$ at -6V) of OLEDs with Al cathodes grown by conventional DC magnetron sputtering. In addition, it was found that Al cathode films prepared by TTS were amorphous structure with nanocrystallines due to low substrate temperature. This demonstrates that there is no plasma damage caused by the bombardment of energetic particles. This indicates that the TTS system with ladder type magnet array could be useful plasma damage free deposition technique for direct Al cathode sputtering on OLEDs or flexible OLEDs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.5
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• pp.488-493
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• 2023

The effect of sputtering power on the amorphous Ga₂O₃ thin film deposited using the radio frequency sputtering system was evaluated. Amorphous Ga₂O₃ is cheaper and more efficiently fabricated than crystalline Ga₂O₃, and is studied in various fields such as RRAM, photodetector, and flexible devices. In this study, amorphous Ga₂O₃ was deposited by radio frequency sputtering system and represented a transmittance of over 80% in the visible light region and a homogeneous and dense surface. The optical band gap energy decreased as the sputtering power increased owing to the quantum size effect. Thus, the specific band gap of amorphous Ga₂O₃ can be obtained by adjusting the sputtering power, it indicates amorphous Ga₂O₃ can be used in various fields.

• Journal of the Korean Vacuum Society
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• v.2 no.4
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• pp.480-485
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• 1993

Factros considered building the magnetron sputtering system for TFT LCD (thin film transistor liquid crystal display0 metallization were thin film thichnes uniformity, temperature uniformity and the pressure gradient of sputtering gas flow in vacuum chamber, base pressure, and the stability fo the carrier moving . The system was consisted of a deposition chamber, a pre-heating chamber, a RF-precleaning chamber and a load/unload lock chamber. The system was designed to handle a substrate with dimension of 400$\times$400mm. The temperautre uniformity of a heater table developed showed $250 ^{\circ}C\pm$5% accuracyon the substrate glass. A base pressure of 1.8 $\times$10-7 torr was obtained after 24 hours pumping with a cryo pump. After an aluminum target was installed in a sputtering source and the film wa sdeposited on the glass, the uniformity, reflectivity and sheet resistance of the deposited film were measured.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.30-30
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• 2000

당사는 각종 진공 장비를 개발/제작한 경험을 바탕으로 25년 동안 진공 산업 발전에 기여하여 왔으며 자체 기술로 HIGH VACUUM 응용시스템 설계 및 제작하고 있다. 이와 함께 3D CAD를 이용한 consulting 및 Modeling 분석을 수행하여, 자체 기술로 설계 및 제작 판매하고 있다. Vacuum System은 In-line System (ITO, SiO2, Cr Tio2, Ag, Al 등), Roll to Roll(Web) Sputtering system (ITO, SiO2, Ar, Metal 등), 유기 EL 박막 진공 증착 장치, PECVD System, Evaporator 시스템 등을 제작 공급하고 있다. 현재 Roll to Roll(Web) Sputtering System은 Dual Cathode를 사용하는 방식으로 개발중에 있으며, 평판 디스플레이용 대면적 Glass를 위한 In-line Sputtering System을 같이 개발하고 있다.