• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.969-973
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• 2012

AlN thin films were deposited on p-type Si(100) substrates by RF magnetron sputtering method. This study showed the change of the preferential orientation of AlN thin films deposition with the change of the deposition conditions such as sputtering pressure and Ar/N2 gas ratio in chamber. It was identified by X-ray diffraction patterns that AlN thin film deposited at low sputtering pressure has a (002) orientation, however its preferred orientation was changed from the (002) to the (100) orientation with increasing sputtering pressure. Also, it was observed that the properties of AlN thin films such as thickness, grain size and surface roughness were largely dependent on Ar/$N_2$ gas ratio and a high quality thin film could be prepared at lower nitrogen concentration. AlN thin films were investigated relationship between preferential orientation and deposition condition by using XRD, FE-SEM and PFM.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.248.2-248.2
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• 2014

In this study, the optical properties and structural characteristics of gallium nitride (GaN) thin films prepared by radio frequency (RF) magnetron sputtering were investigated. Auger electron and X-ray photoelectron spectra showed that the deposited films consisted mainly of gallium and nitrogen. The presence of oxygen was also observed. The optical bandgap of the GaN films was measured to be approximately 3.31 eV. The value of the refractive index of the GaN films was found to be 2.36 at a wavelength of 633 nm. X-ray diffraction data revealed that the crystalline phase of the deposited GaN films changed from wurtzite to zinc-blende phase upon decreasing the sputtering gas pressure. Along with the phase change, a strong dependence of the microstructure of the GaN films on the sputtering gas pressure was also observed. The microstructure of the GaN films changed from a voided columnar structure having a rough surface to an extremely condensed structure with a very smooth surface morphology as the sputtering gas pressure was reduced. The relationship between the phase and microstructure changes in the GaN films will be discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.846-851
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• 2004

Transparent conducting indium tin oxide (TC-ITO) thin films on polymeric substrates have been deposited by a dc reactive magnetron sputtering without heat treatments. The polymeric substrates are acryl (AC), poly carbornate (PC), and polyethlene terephthalate (PET) as well as soda lime glass is also used to compare with the polymeric substrates. Sputtering parameters are an important factor for high quality of TC-ITO thin films prepared on polymeric substrates. Furthermore, the material, electrical and optical properties of as-deposited ITO films are dominated by the ratio of oxygen partial pressure. As the experimental results, the surface roughness of ITO films becomes rough as the oxygen partial pressure increases. The electrical resistivity of as-deposited ITO films decreases initially, and then increases with the increase of oxygen partial pressure. The optical transmittance at visible wavelength for all polymeric substrates is above 82 %.

• Journal of the Korean Society for Heat Treatment
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• v.23 no.2
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• pp.69-74
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• 2010

AlN thin films were deposited by using a two-facing-targets type sputtering system (TFTS), and their deposition characteristics, microstructure and texture were investigated. Total gas pressure was kept constant at 0.4 Pa and the partial pressures of nitrogen, $PN_2$ (($N_2$ pressure)/($Ar+N_2$ pressure)) varied from 0 to 0.4 Pa. The texture of the film cross-sections and surface morphology were observed by field emission scanning electron microscope (FE-SEM). The crystallographic orientation of the films were analyzed by X-ray diffraction (XRD). Deposition of AlN film depends on $N_2$ partial pressure. The best preferred oriented AlN thin films can be deposited at a nitrogen partial pressure of $PN_2$ = 0.52. As-deposited AlN films show preferred orientation and columnar structure, and the grAlN size of AlN films increases with increasing sputtering current.

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.441-447
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• 1996

Sb doped SnO2(ATO:Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using oxide target and the deposition characteristics were investigated. The experimental conditions are as follows :Ar flow rate : 100 sccm oxygen flow rates ; 0-100 sccm deposition temperature ; 250 -40$0^{\circ}C$ DC sputter powder ; 150~550 W and sputtering pressure ; ; 2~7 mTorr. Deposition rate greatly depends not on the deposition temperature but on the reaction pressure oxygen flow rate and sputter power,. when the sputter powder is low ATO thin films with (110) preferred orientation are deposited. And when the sputter power is high (110) prefered orientation appeares with decreasing of oxygen flow rate and increasing of suputte-ring pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.61-62
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• 2005

The present article deals with in situ post annealing of ZnO in sputtering system. The ZnO thin films were grown at low temperature of $100^{\circ}C$ and at working pressure of 15 mTorr with RF magnetron sputtering. Having been gown, ZnO thin films were annealed in situ at different temperatures, at annealing ambient pressure of 15 mTorr and in ambients of oxygen and argon respectively. Through analyses of XRDs, it is can be concluded that the crystallinity of annealed ZnO thin films becomes much better than that of as-grown ZnO thin film.

• Journal of the Korean Magnetics Society
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• v.4 no.1
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• pp.32-38
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• 1994

We have investigated the effects of sputtering Ar gas pressure on magnetic and magneto-optical properties in compositionally modulated Co/Pt superlattice thin films. The samples were prepared by dc magnetron sputtering. Sputtrering Ar gas pressure was varied from 2 to 30 mTorr. The microstructure of the samples was examined by scanning electron microscope and the x-ray diffractometry. The magnetization, the Kerr rotation angle, and the reflectivity of the samples were measured. The columnar structure was developed, and the coercivity was drasti- cally increased, when the sputtering Ar gas pressure was higher than 20 mTorr. We explained that the variation of the magnetization, the Kerr rotation angle, and the reflectivity was related with the microstructure influenced by the variation of the Ar gas pressure.

• Transactions on Electrical and Electronic Materials
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• v.4 no.4
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• pp.10-12
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• 2003

NBCO thin films have been fabricated by magnetron sputtering technique on heated $SrTiO_3$ substrates. The oxidation and crystallization of the films were strongly dependent on the distance between the targets and the substrate, as well as on the oxygen partial pressure. The critical temperatures were above 80K for the films prepared under the condition of a small target to substrate gap, in spite of a very low oxygen pressure of 0.2Pa. The results suggest the importance of the activated oxygen uptake into the films during sputtering.

• Journal of the Korean Magnetics Society
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• v.2 no.2
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• pp.119-124
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• 1992

We have investigated the effects of sputtering Ar gas pressure on magnetic and magneto-optical properties in compositionally modulated Co/Pd superlattice thin films. The samples were prepared by dc magnetron sputtering from 2-in.-diam Co and Pd targets by alternately exposing the substrates to targets. Sputtering Ar gas pressure was varied from 2 to 30 mTorr. All samples had same bilayer thicknesses composed of 2-$\AA$-thick Co and 9-$\AA$-thick Pd sublayers. It was observed that the colum-nar structure was more distinctively developed with increasing Ar gas pressure. We observed that the intrinsic uniaxial anisotropy energy, magnetization and polar Kerr rotation were decreased with increasing Ar gas pressures. Large coercivity and perfect squareness were attained by the deposition at the high Ar gas pressure. We believe that the results are mainly ascribed the variation of micro-structure with sputtering Ar gas pressure.

• Journal of Electrical Engineering and Technology
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• v.2 no.4
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• pp.525-531
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• 2007

Ni(75 wt.%)-Cr(20 wt.%)-Al(3 wt.%)-Mn(4 wt.%)-Si(1 wt.%) alloy thin films were prepared using the DC magnetron sputtering process by varying the sputtering conditions such as power, pressure, substrate temperature, and post-deposition annealing temperature in order to fabricate a precision thin film resistor. For all the thin film resistors, sheet resistance, temperature coefficient of resistance (TCR), and crystallinity were analyzed and the effects of sputtering conditions on their properties were also investigated. The oxygen content and TCR of Ni-Cr-Al-Mn-Si resistors were decreased by increasing the sputtering pressure. Their sheet resistance, TCR, and crystallinity were enhanced by elevating the substrate temperature. In addition, the annealing of the resistor thin films in air at a temperature higher than $300^{\circ}C$ lead to a remarkable rise in their sheet resistance and TCR. This may be attributed to the improved formation of NiO layer on the surface of the resistor thin film at an elevated temperature.