• Journal of the Semiconductor & Display Technology
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• v.11 no.1
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• pp.1-5
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• 2012

Al doped ZnO (AZO) thin film was deposited by using Facing Target Sputtering (FTS) system. This work examined the properties of AZO thin film as a function of the substrate temperature. The sputtering targets were 4 inch diameter disks of AZO (ZnO : $Al_2O_3$ = 98 : 2 wt.% ). The properties of electrical, structural and optical were investigated by 4-point probe, Hall effect measurement, x-ray diffractometer (XRD), field-emitting scanning electron microscopy (FE-SEM), and UV/VIS spectrometer. The lowest resistivity of films was $5.67{\times}10^{-4}{\Omega}.cm$ and the average optical transmittance of the films was above 85% in the visible range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.464-466
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• 2000

AIN thin films have been prepared by reactive sputtering method, using facing targets sputtering system with a DC power supply which can deposit a high quality thin film and control deposition condition in all range of nitrogen. The crystallographic characteristics of AIN thin films on N$_2$/Ar ratio was investigated by alpha-step and X-ray diffraction. As a result, the AIN film deposited at the pressure ratio of the nitrogen of 30% revealed strong X-ray diffraction intensity under substrate temperature 25$^{\circ}C$ and applied current 0.4A.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.257-264
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• 1999

Thin reflective films are synthesized by using PVD methods with a bright metal of Al or Ag. For purposes of improving the reflectance and adhesion of such films particularly, substrate bias was applied during sputtering (namely, ion-plating) to enhance the deposition process with higher energy. And we succeeded in fabricating a quality silver film which possesses an adhesion of $85{\;}Kg/\textrm{cm}^2$ and a high reflectivity of more than 96%. Both of reflectivity and adhesion are better in case of bias sputtering as controlled than nonbias sputtering, particularly the bias of 50-100 V showed most effective. The microstructures of sample films were examined by using various equipments and the XRD spectrum in particular showed that <111> direction is the preferred growth orientation.

• Progress in Superconductivity and Cryogenics
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• v.23 no.4
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• pp.1-5
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• 2021

Among elemental metals, niobium (Nb) has the highest superconducting transition temperature (T_c) at ambient pressure. Thus, Nb films have been used in superconducting electronics and radio frequency cavity applications. In this study, the depositional factors determining the crystallinity and T_c of Nb films were investigated. An Nb film grown at a sputtering temperature of 240℃ exhibited the maximum crystallinity of Nb and the minimum crystallinity of niobium oxide. X-ray photoelectron spectroscopy confirmed a maximum atomic percent of niobium and a minimum atomic percent of oxygen. A sputtering power of 210 W and a sputtering time of 50 min were the optimal conditions for Nb deposition, and the T_c of the optimized film (9.08 K) was close to that of bulk Nb (9.25 K). Transmission electron microscopy images of the thick film directly confirmed the removal of the typical in-plane compressive strain in the (110) plane caused by residual stress.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.281-282
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• 2005

The AZO thin film was prepared on flexible substrate by Facing Targets Sputtering method. The substrate used the Polycarbonate(PC), thickness 200$\mu$m. In particular, the AZO thin film was prepared at room temperature because the substrate is weak in heat. The structural, electrical, optical properties of the AZO thin film were investigated and the surface was observed by microscope.

• Journal of the Korean institute of surface engineering
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• v.33 no.1
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• pp.34-37
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• 2000

We prepared ZnO thin film with Facing Targets Sputtering system that can deposit thin film in plasma-free situation and change the deposition condition in wide range. And prepared thin film's c-axis orientation and grain size were analyzed by XRD (x-ray diffractometer). In the results, we suggest that FTS system is very suitable to preparing high quality ZnO thin film with good c-axis orientation.

• Korean Journal of Materials Research
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• v.26 no.12
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• pp.676-680
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• 2016

We have investigated the properties of thin film transistors(TFT) fabricated using zinc tin oxide(ZTO) thin films deposited via on-axis sputtering and FTS methods. ZTO thin films deposited by FTS showed lower root-mean-square(RMS) roughness and more uniformity than those deposited via on-axis sputtering. We observed enhanced electrical properties of ZTO TFT deposited via FTS. The ZTO films were deposited at room temperature via on-axis sputtering and FTS. The as-deposited ZTO films were annealed at $400^{\circ}C$. The TFT using the ZTO films deposited via FTS process exhibited a high mobility of $12.91cm^2/V.s$, a low swing of 0.80 V/decade, $V_{th}$ of 5.78 V, and a high $I_{on/off}$ ratio of $2.52{\times}10^6$.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.53-57
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• 2019

In this study, we prepared sputtering cathode for large sputtering thin film in the facing targets sputtering(FTS) system. Before fabrication of cathode equipment, we investigated optimal magnetic flux in the sputtering cathode by using magnetic field stimulation(Comsol). According to the result of magnetic field stimulation, we manufactured the cathode. After we mounted laboratory-designed cathode on FTS system, the discharge properties were observed in vacuum condition. In addition, ITO films were deposited on glass substrate and their electrical and optical properties were investigated by various measurements (four-point probe, UV-VIS spectrometer, field emission scanning electron microscopy(FE-SEM), Hall-effect measurement).

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.7
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• pp.3160-3164
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• 2012

To obtain available process at low temperature, SiOC thin film was prepared with various flow rates by using the rf magnetron sputtering, and AZO thin film was also deposited on SiOC film by rf magnetron sputtering system. The optical electrical properties of the SiOC film and SiOC/AZO were analyzed by the uv visible spectrometer and PL spectra. SiOC film on n type Si showed various type emission according to the deposition condition. The SiOC film showed the blue shift with increasing the thickness in PL spectra. AZO/SiOC/Si film had a broad emission characteristic, which is enhanced the efficiency in solar cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.575-578
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• 2000

In this work, all solid-state thin film supercapacitor(TFSC) was fabricated using tungsten trioxide (WO$_3$) with a structure WO$_3$/LiPON/WO$_3$/Pt/TiO$_2$/Si (substrate). After TiO$_2$ was deposited on Si(100) wafer by d.c. reactive sputtering, the Pt current collector films were grown on TiO$_2$glue layer without breaking vacuum by d.c. sputtering. Fabrication conditions of WO$_3$ thin film were such that substrate temperature, working pressure, gas ratio of $O_2$/Ar and r.f. power were room temperature, 5 mTorr, 20% (O$_2$(8sccm)/Ar(32sccm)) and 200W, respectively. LiPON electrolyte film were grown on the WO$_3$ film using r.f. magnetron sputtering at room temperature. The XRD pattern of the as-deposited WO$_3$ thin film were shown no crystalline peak (amorphous). The SEM image of as-deposited WO$_3$ thin film showed that the surface is smooth and uniform. The capacitiy of as-fabricated TFSC was 0$\times$10$^{-2}$ F/$\textrm{cm}^2$-${\mu}{\textrm}{m}$.