• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.289-292
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• 1997

BaTiO$_3$thin film capacitor were prepared on Pt(100)/SiO$_2$/Si(100)wafer by RF sputtering technique. Dielectric and electrical characteristics of the thin film capacitor are investigated. The Dielectric constant and loss were about 683 and 5[%], respectively. We found that the leakage current of thin film capacitor is depend on RF power during deposition. Because of increase of activation energy, leakage current inclosed at high RF power and sheet resistivity of the films was decreased. Swithching voltage of thin film capacitor was 4.4[V]

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.98-101
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• 2004

AZO(ZnO:Al) thin film were prepared by FTS(Facing Target Sputtering) system. Change the sputtering conditions, AZO thin film deposited the lower resistivity(<$10-4{\Omega}cm$) so it can use to be a display application electrode. In this study, the electrical and crystallographic effects of target type have been investigated. The crystal structure was studied by XRD and the resistivity of AZO thin film was obtained by the four-point probe.

• ETRI Journal
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• v.34 no.5
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• pp.779-782
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• 2012

$CuIn_{1-x}Ga_xSe_2$ (CIGS) thin films are grown on Mo/soda lime glass using a reactive sputtering process in which a Se cracker is used to deliver reactive Se molecules. The Cu and $(In_{0.7}Ga_{0.3})_2Se_3$ targets are simultaneously sputtered under the delivery of reactive Se. The effects of Se flux on film composition are investigated. The Cu/(In+Ga) composition ratio increases as the Se flux increases at a plasma power of less than 30 W for the Cu target. The (112) crystal orientation becomes dominant, and crystal grain size is larger with Se flux. The power conversion efficiency of a solar cell fabricated using an 800-nm CIGS film is 8.5%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.4
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• pp.328-335
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• 2001

In this work, we made the precision thin film resistors of NiCr alloy (74wt%Ni-f18wt%Cr-4wt%Al-4wt%Cu) using DC/RF magnetron sputtering method and studied the sheet resistance and TCR(Temperature Coefficient of Resistance) etc... of the Ni-Cr-Al-Cu alloy thin film according to the change by annealing treatment to 400$\^{C}$ in air and nitrogen atmosphere and the change(power, pressure, substrate temperature) of sputtering process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.419-422
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• 1999

We prepared CoCr thin film for perpendicular magnetic recording media by facing targets sputtering system(FTS system) which can deposit a high quality thin films in plasma-free state and wide range of working pressure. In this study, we investigated that the effect of sputtering condition , that Argon gas pressure and substrate temperature, on magnetic and crystallographic characteristic of CoCr thin film as well as the variation perpendicular coercivity in changing of film's thickness. Crystallographic and magnetic characteristic of prepared thin films were evaluated by x-ray fractometry(XRD), vibrating sample magnetometer(VSM) and kerr hysteresis loop measurement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-(ibm for high precision resistors, which were deposited oni substrate by DC reactive magnetorn sputtering in an argon-nitrogen atmosphere(Ar-(4∼16%)N$_2$). Sturcutural properties sutided using X-ray diffraction (XRD) indicate the presence of TaN, Ta$_3$N$\sub$5/ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % N$_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho$=305.7 ${\mu}$Ωcm, a low temperature coefficient of resistance, TCR=-36 ppm/$^{\circ}C$.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.212-214
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• 1994

At recent time, superconducting technology makes it possible to develop various devices using strong magnetic fields. As increasing with devices using high magnetic fields, magnetic shielding technology is essential in order to get high efficiency. Therefore it is necessary to establish production method and clear characteristics of suitable shielding materials. Usually, ferromagnetic metal has been used for shielding of high magnetic fields up to the present time. Instead of heavy ferromagnetic metal, we can acquire better upgraded shielding system by using of very light superconducting thin film that has a perfect diamagnetism. We would like to study basic characteristics of NbTi thin film produced by RF sputtering, investigated morphology and crystal structure of NbTi thin film by SEM and XRD, identified superconductivity measuring by critical current.

• Journal of the Korean Physical Society
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• v.73 no.12
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• pp.1867-1872
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• 2018

This study proposes a route for surface modification for p-type cobalt oxide-based gas sensors. We deposit a thin layer of Ni on the Co oxide film by sputtering process and annealed at $350^{\circ}C$ for 15 min in air, which changes a typical sputtered film surface into one interlaced with a high density of hemispherical nanoparticles. Our in-depth materials characterization using transmission electron microscopy discloses that the microstructure evolution is the result of an extensive inter-diffusion of Co and Ni, and that the nanoparticles are nickel oxide dissolving some Co. Sensor performance measurement unfolds that the surface modification results in a significant sensitivity enhancement, nearly 200% increase for toluene (at $250^{\circ}C$) and CO (at $200^{\circ}C$) gases in comparison with the undoped samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.846-850
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• 2003

Thin film $SnO_2$ Gas Sensor was fabricated by using ion beam sputtering and ultra thin film Pt catalyst of $45{\AA}$ was deposited on $SnO_2$ thin film. The effects of annealing temperature on the structural properies of $SnO_2$ were investigated using the X-ray diffraction. Using SEM, microstructures of thin film were investigated. The good gas sensitivity is shown when annealing condition is $650^{\circ}C$, 5hr and ultra thin film Pt catalyst thickness is $45{\AA}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.920-923
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• 2000

All solid-state thin film supercapacitor(TFSC) based on $RuO_2$ electrode was fabricated. Ruthenium oxide$(RuO_2)$ thin film was deposited on Pt/Ti/Si subsrate by d.c. magnetron sputtering. LiPON(lithium phosphorus oxynitride) thin film were deposited by r.f. reactive sputtering. X-ray diffraction patterns of $RuO_2$ and LiPON films revealed that crystal structures of both films were amorphous. To decrease resistivity of $RuO_2$ thin film, $RuO_2$ thin film was deposited with $H_2O$ vapor. In order to decide the maximum ionic conductivity, the LiPON films were prepared by various sputtering condition. The maximum ionic conductivity was $9.5\times{10}^7S/cm$. A charge-discharge measurements showed the capacity of $3\times{10-2}\;F/cm^2-\mu{m}$ for the as-fabricated TFSC. The discharging efficiency was decreased after 500 cycles by 40 %.