• Title/Summary/Keyword: split peaks

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Effects of Organic Thin Films on Local Resonance of Metamaterials under Photoexcitation

  • Song, Myeong-Seong;Hwang, In-Wook;Lee, Chang-Lyoul;Kang, Chul;Kee, Chul-Sik;Park, Sae June;Ahn, Yeong Hwan;Park, Doo Jae;Lee, Joong Wook
    • Current Optics and Photonics
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    • v.1 no.4
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    • pp.372-377
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    • 2017
  • We demonstrate that the local resonance of metamaterials can be tuned by the effects of organic thin films under photoexcitation. Tris (8-hydroxyquinolinato) aluminum ($Alq_3$) layers are deposited on metamaterial/silicon hybrid structures. By varying the thickness of the $Alq_3$ layer on the subwavelength scale, the resonant peak of the metamaterial becomes very adjustable, due to the effect of a thin dielectric substrate. In addition, under photoexcitation all the spectral peaks of the resonance shift to higher frequencies. This originates from the reduction of the capacitive response generated inside the gaps of split-ring resonators. The adjustability of the electromagnetic spectrum may be useful for developing optical systems requiring refractive-index engineering and active optical devices.

A Novel Detection Scheme for Reducing the Effect of Residual Doppler Frequency Offset in Spread Spectrum Systems (나머지 도플러 주파수 오프셋이 있는 대역확산 시스템에서 새로운 검파기법)

  • Yoo Seung-Soo;Kim Sun-Yong;Song Iick-Ho
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.31 no.6A
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    • pp.586-592
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    • 2006
  • In this paper, a novel detection method called the joint multiple frequency cell (JMFC) detection is addressed for spread spectrum code acquisition in the presence of residual Doppler frequency offset (RDFO). When the RDFO exists, the correlation peak used for detection during the acquisition process is split into several lower neighboring peaks, resulting in severe degradation in the detection performance, and consequently, in the overall acquisition performance. In the JMFC detection, a decision variable for detection is formed by combining several consecutive correlator outputs, so that the reduction in the correlation value due to the RDFO can be alleviated. Numerical results show that the proposed scheme can offer better detection performance over the conventional scheme based on the cell-by-cell detection.

Study on the Efficiency in Silocin Solar Cell (실리콘 태양전지 셀 효율에 관한 연구)

  • Hyun, Il-Seoup;Oh, Teresa
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.11 no.7
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    • pp.2565-2569
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    • 2010
  • It was researched the correlation between the Solar cell and the effect of texturing. The samples were textured by using the IPA mixed solution with $HNO_3$, KOH and NaOH. The samples were analyzed by the X-ray Diffraction pattern and Fourier Transform Infrared spectroscopy. The FTIR spectra in the range of 950~1350 $cm^{-1}$ was related to the peak's formation as the bonding structure. The split of peaks means that the inter reaction between the molecular did not activate and then increased the efficiency because of low reflectance as shown the cell treated in NaOH mixed solution.

Optical Properties of Cdlnsub 2Ssub 4 and Cdlnsub 2Ssub 4 : $CdIn_2S_4$$CdIn_2S_4 : Co^{2+}$Single Crystals ($CdIn_2S_4$$CdIn_2S_4 : Co^{2+}$ 단결정의 광학적 특성)

  • Choe, Seong-Hyu;Bang, Tae-Hwan;Kim, Hyeong-Gon
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.5
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    • pp.296-302
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    • 1999
  • $CdIn_2S_4 and CdIn_2S_4 : Co^{2+}$ singlecrystals of thenormal spinel structure were grown by the C.T.R. method. The optical energy band structure of these compounds had a indirect band gap at the fundamental optical absorption band edge. The direct and the indirect energy gaps are found to be 2.325 and2.179eV for $Cdln_2S_4$ , and 2.303 and 2.169eV for $CdIn_2S_4 and CdIn_2S_4 : Co^{2+}$ at 5K, respectivly. The fundamental absorption band edge of these single crystals shift to a shorter wavelength region with decreasing temperature, and the temperature dependence of the optical energy gaps in these compounds satisfy Varshni equation. The Varshni constants$\alpha and \beta$ of the direct energy gap are given by $13.39{\times}10_{-4}eV/K$ and 509 K for $Cdln_2S_4$ and $29.73{\times}10_{-4} eV/K$ and 1398K for $CdIn_2S_4 and CdIn_2S_4 : Co^{2+}$. The Varshni constants ${\alpha}and {\beta}$ of the indirect energy gap are given by 9.68${\times}10^{-4}$ eV/K 308K for $Cdln_2S_4$ and $13.33{\times}10_{-4}eV/K$ and 440K for $CdIn_2S_4 : Co^{2+}$ respectivly. The impurity optical absorption peaks due to cobalt dopant are observed in $CdIn_2S_4 : Co^{2+}$ single crystal. These impurity optical absorption peaks can be attributed to the electronic transitions between the split energy levels of $Co_{2+}$ ions located at $T_d$ symmetry site of $Cdln_2S_4$ host lattece.

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Dual-Cell Combining Detection Method for Reduction of Residual Frequency Offset Influence on Code Acquisition Systems (나머자 옵셋이 부호획득 시스템에 미치는 영향을 줄이기 위한 듀얼셀 결합 검파 알고리즘)

  • Chong, Da-Hae;Lee, Young-Yoon;Yoon, Tae-Ung;Lee, Young-Po;Lee, Myung-Soo;Yoon, Seok-Ho
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.34 no.7C
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    • pp.715-723
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    • 2009
  • In this paper, we propose a new detection method called dual-cell combining (DCC) detection for the acquisition in time of spread spectrum codes in the presence of residual frequency offset (RFO). When the RFO exists, the correlation peak used for detection during the acquisition process is split into two neighboring peaks with smaller amplitudes, resulting in considerable degradation in the overall acquisition performance of conventional methods. In the DCC detection method, the decision variable for detection is formed by combining two consecutive correlator outputs so that the influence of the reduction in the correlation peak due to the RFO can be alleviated. Numerical results show that the DCC detection method can offer better mean-time-to-synchrouization performance than the conventional method based on the cell-by-cell detection.

Fixation Method of Prestressed Fiber Optic Sensor (광섬유센서의 프리스트레인 부가 고정방식)

  • Kim, Ki-Soo
    • Composites Research
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    • v.25 no.6
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    • pp.211-216
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    • 2012
  • FBG sensor peaks could be split due to polarization by shear strain, when the fiber optic sensors embedded or attached to the structure. For the fiber optic sensor packages, sensor grating has to be protected from shear strains. Also, pretension has to be applied to the sensor because compressive strain must be measured. Without pretension of sensor, the sensor does not show any change of signal until it is stretched. In order to mesure compressive and tensile strains, two fixing point and prestressed sensor need. In the fixing point, just holding the optical fiber cause slip between core and cladding in the fiber. A Fixation method of prestressed FBG sensors fixed with partially stripped fibers was developed. The sensor package has the prestress controllable fixtures at the fixing points. Prestress to the sensor imposed by controlling the two fixed points with bolts and nuts make it easy to measure compressive strain as well as tensile strain. The fiber optic sensor packages applied to the actual structure and the structural monitoring system using the package can be applied to safety through surveillance.

The Magnetic and Thermal Properties of a Heavy Fermion CeNi2Ge2 (헤비페르미온계 CeNi2Ge2의 자기 및 열적 특성)

  • Jeong, Tae Seong
    • Korean Journal of Materials Research
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    • v.29 no.7
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    • pp.451-455
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    • 2019
  • The electromagnetic and thermal properties of a heavy fermion $CeNi_2Ge_2$ are investigated using first-principle methods with local density approximation (LDA) and fully relativistic approaches. The Ce f-bands are located near the Fermi energy $E_F$ and hybridized with the Ni-3d states. This hybridization plays important roles in the characteristics of this material. The fully relativistic approach shows that the 4f states split into $4f_{7/2}$ and $4f_{5/2}$ states due to spin-orbit coupling effects. It can be found that within the LDA calculation, the density of states near the Fermi level are mainly of Ce-derived 4f states. The Ni-derived 3d states have high peaks around -1.7eV and spreaded over wide range around the Fermi level. The calculated magnetic of $CeNi_2Ge_2$ with LDA method does not match with that of experimental result because of strong correlation interaction between electrons in f orbitals. The calculations show that the specific heat coefficient underestimates the experimental value by a factor of 19.1. The discrepancy between the band calculation and experiment for specific heat coefficient is attributed to the formation of a quasiparticle. Because of the volume contraction, the exchange interaction between the f states and the conduction electrons is large in $CeNi_2Ge_2$, which increases the quasiparticle mass. This will result in the enhancement of the specific hear coefficient.

Optical Properties of Photoferroelectic Semiconductors IV.(Optical Properties of SbSI:V, SbSeI:V, BiSI:V, BiSeI:V, SbSI:Cr, SbSeI:Cr, BiSI:Cr, BiSeI:Cr, SbSI:Ni, SbSeI:Ni, BiSI:Ni and BiSeI:Ni Single Crystals) (Photoferroelectric 반도체의 광학적 특성 연구 IV. (SbSI:V, SbSeI:V, BiSI:V, BiSeI:V, SbSI:Cr, SbSeI:Cr, BiSI:Cr, BiSeI:Cr, SbSI:Ni, SbSeI:Ni, BiSI:Ni 및 BiSeI:Ni 단결정의 광학적 특성에 관한 연구))

  • Oh, Seok-Kyun;Hyun, Seung-Cheol;Yun, Sang-Hyun;Kim, Wha-Tek;Kim, Hyung-Gon;Choe, Sung-Hyu;Yoon, Chang-Sun;Kwun, Sook-Il
    • Journal of the Korean Vacuum Society
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    • v.2 no.2
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    • pp.236-245
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    • 1993
  • Single crystals, SbSI : V, SbSeI : V, BiSI : V, BiSeI : V, SbSI : Cr, SbSeI : Cr, BiSI : Cr, BiSeI : Cr, SbSI : Ni, SbSeI : Ni, BiSI : Ni, and BiSeI : Ni were grown by the vertical Bridgman method. It is found that the grown single crystals have an orthorhombic structure and the indirect optical transitions. The temperature dependence of energy gap shows the two reflection point related with the phase transitions and is well fitted with Varshni equation in the continuous region. The optical absorption peaks due to the doped impurities (V, Cr and Ni) are respectively attributed to the electron transitions between the split energy levels of $V^{+2}$, $Cr^{+2}$ and $Ni^{+2}$ ions sited at $T_d$ symmetry of the host lattice.

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Optical Properties of Photoferroelectric Semiconductors III.(Optical Properties of $SbS_{1-x}Se_xI,\;BiS_{1-x}Se_xI,\;Sb_{1-x}Bi_xSI,\;Sb_{1-x}Bi_xSeI,\;SbS_{1-x}Se_xI:Co,\;BiS_{1-x}Se_xI:Co,\;Sb_{1-x}Bi_xSI:Co\;and\;Sb_{1-x}Bi_xSeI:Co$ Single Crystals) (Photoferroelectric 반도체의 광학적 특성 연구 III.($SbS_{1-x}Se_xI,\;BiS_{1-x}Se_xI,\;Sb_{1-x}Bi_xSI,\;Sb_{1-x}Bi_xSeI,\;SbS_{1-x}Se_xI:Co,\;BiS_{1-x}Se_xI:Co,\;Sb_{1-x}Bi_xSI:Co$, 및 $Sb_{1-x}Bi_xSeI:Co$ 단결정의 광학적 특성에 관한 연구))

  • Hyun, Seung-Cheol;Oh, Seok-Kyun;Yun, Sang-Hyun;Kim, Wha-Tek;Kim, Hyung-Gon;Choe, Sung-Hyu;Kim, Chang-Dae;Yoon, Chang-Sun;Kwun, Sook-Il
    • Journal of the Korean Vacuum Society
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    • v.2 no.2
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    • pp.227-235
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    • 1993
  • $SbS_{1-x}Se_xI,\;BiS_{1-x}Se_xI,\;Sb_{1-x}Bi_xSI,\;Sb_{1-x}Bi_xSeI,\;SbS_{1-x}Se_xI:Co,\;BiS_{1-x}Se_xI:Co,\;Sb_{1-x}Bi_xSI:Co$, and $Sb_{1-x}Bi_xSeI:Co$ single crystals were grown by the vertical Bridgman method using the ingots. It has been found that these single crystals have an orthorhombic structure and indirect optical transition. The composition dependences of energy gaps are given by $E_g(x)=E_g(0)-Ax+Bx^2$. The impurity optical absorption peaks due to cobalt deped with impurity are attributed to the electron transitions between the split energy levels of $Co^{2+}$ and $Co^{3+}$ ions sited at $T_d$symmetry of the host lattice.

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Optical properties of $ZnIn_2Se$ and $ZnIn_2Se_4$:Co single crystals ($ZnIn_2Se_4$$ZnIn_2Se_4$:Co 단결정의 광학적 특성)

  • 최성휴;방태환;박복남
    • Journal of the Korean Vacuum Society
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    • v.6 no.2
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    • pp.129-135
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    • 1997
  • Undoped and Co-doped $ZnIn_2Se_4$ single crystals crystallized in the tetragonal space group 142m, with lattice constants a=5.748 $\AA$ and c=11.475 $\AA$, and a=5.567 $\AA$ and c=11.401 $\AA$. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of these compounds had an indirect band gap, the direct and the indirect energy gaps of these compounds decreased as temperature changed from 10 to 300 K. The temperature coefficients of the direct energy gaps were found to be $\alpha=3.71\times10^{-4}$eV/K and $\beta$=519 K for $\alpha=3.71\times10^{-4}$eV/K and $\beta$=421K for $ZnIn_2Se_4$: Co. The temperature coefficients of the indirect energy gaps were also found to be $\alpha=2.31\times10^{-4}$ eV/K and $\beta$=285 K for $ZnIn_2Se_4$, and $\alpha=3.71\times10^{-4}$eV/K and $\beta$=609 K for $ZnIn_2Se_4$:Co, respectively. Six impurity optical absorption peaks due to cobalt are observed in $ZnIn_2Se_4$:Co single crystal. These impurity optical absorption peaks can be attibuted to the electronic transitions between the split energy levels of$CO^{2+}$ ions located at Td symmetry site of $ZnIn_2Se_4$ host lattice. The 1st order spin-orbit coupling constant ($\lambda$), Racah parameter (B), and crystal field parameter (Dq) ARE GIVEN AS -$243\textrm{cm}^{-1}, 587\textrm{cm}^{-1}, \;and\;327\textrm{cm}^{-1}$, respectively.

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