• Title/Summary/Keyword: spin valve structure

Search Result 63, Processing Time 0.024 seconds

Fabrication and Characteristics of a Highly Sensitive GMR-SV Biosensor for Detecting of Micron Magnetic Beads (미크론 자성비드 검출용 바이오센서에 대한 고감도 GMR-SV 소자의 제작과 특성 연구)

  • Choi, Jong-Gu;Lee, Sang-Suk;Park, Young-Seok
    • Journal of the Korean Magnetics Society
    • /
    • v.22 no.5
    • /
    • pp.173-177
    • /
    • 2012
  • The multilayer structure of glass/Ta(5.8 nm)/NiFe(5 nm)/Cu(t nm)/NiFe(3 nm)/FeMn(12 nm)/Ta(5.8 nm) as typical GMR-SV (giant magnetoresistance-spin valve) films is prepared by ion beam sputtering deposition (IBD). The coercivity and magnetoresiatance ratio are increased and decreased for the decrease of Cu thickness when the thickness of nonmagnetic Cu layer from is varied 2.2 nm to 3.0 nm. It means that the decrease of non-magntic layer is effected to the interlayer exchange coupling of pinned layer and the spin configuration array of free layer. For experiment of detecting and dropping of magnetic beads we used the GMR-SV sensor with glass/Ta/NiFe/Cu/NiFe/FeMn/Ta structure. From the comparison of before and after for the dropping status of magnetic bead, the variations of MR ratio, $H_{ex}$, and $H_c$ are showed 0.9 %, 3 Oe, and 2 Oe, respectively. The fabrication of GMR-SV sensor was included in the process of film deposition, photo-lithography, ion milling, and MR measurement. Further, GMR-SV device can be easily integrated so that detecting biosensor on a single chip becomes possible.

Interlayer Coupling Field in Spin Valves with CoEe/Ru/CoFe/FeMn Synthetic Antiferromagnet (Synthetic antiferromagnet CoFe/Ru/CoFe/FeMn을 이용한 스핀 밸브 구조의 interlayer coupling field)

  • Kim, K.Y.;Shin, K.H.;Kim, H.J.;Jang, S.H.;Kang, T.
    • Journal of the Korean Magnetics Society
    • /
    • v.10 no.5
    • /
    • pp.203-209
    • /
    • 2000
  • Top synthetic spin valves with structure Ta/NiFe/CoFe/Cu/CoFe(P 1)/Ru/CoFe(P2)/FeMn/Ta on Si (100) substrate with natural oxide were prepared by dc magnetron sputtering system. We have changed only the thickness in free layers and the thickness difference (Pl-P2) in two ferromagnetic layers separated by Ru, and investigated the effect of magnetic film thickness on interlayer coupling field in spin valve with synthetic antiferromagnet. According to the decrease of free layer thickness, interlayer coupling field was increased due to the magnetostatic coupling(orange peel coupling). In case of t$\_$P1/>t$\^$P2/, interlayer coupling field agreed well with the modified Neel model suggested in conventional spin valve structures by Kools et al. However, in case of t$\_$P1/>t$\^$P2/, it was found that the interlayer coupling field was not explained by the Modified Neel Model and was confirmed the necessity of further remodeling. The dependence of Cu thickness on the interlayer coupling field was investigated and 10 Oe of interlayer coupling field was obtained when the Cu thickness is 32 $\AA$.

  • PDF

Post-annealing Effect of Giant Magnetoresistance-Spin Valve Device for Sensor (센서용 거대자기저항 스핀밸브소자의 열처리 효과)

  • Lee, Sang-Suk;Park, Sang-Hyun;Soh, Kwang-Sup;Joo, Ho-Wan;Kim, Gi-Wang;Hwang, D.G.
    • Journal of the Korean Magnetics Society
    • /
    • v.17 no.4
    • /
    • pp.172-177
    • /
    • 2007
  • In order to detect of the magnetic property in the cell unit, we studied the GMR-SV (giant magnetoresistance-spin valves) biosensor, which was depended on the micro patterned features according to two easy directions of longitudinal and transversal axes. Here, the multi layer structure was glass/NiO/NiFe/CoFe/Cu/CoFe/NiFe. The uniaxial anisotropy direction was applied to the patterned biosensor during the deposition and vacuum post-annealing at $200^{\circ}C$ under the magnitude of 300 Oe, respectively. Considering the magnetic shape anisotropy effect, the size of micro patterned biosensor was a $2{\times}5{\mu}m^2$ after the photo lithography process. By our experimental results, we confirmed that the best condition of GMR-SV biosensor should be the same direction of the axis sensing current and the easy axis of pinned NiO/NiFe/CoFe triple layer oriented to the width direction of device, and the direction of the easy axis of free CoFe/NiFe bilayer was according to the longitudinal direction of device.

The Properties of Spin Valves with a Partially Oxidized Fe or CoFe Ultra-Thin Layer Inserted in the Magnetic Layers

  • In, Jang-sik;Han,Yoon-sung;Kim, Sung-hoon;Shim, Jae-chul;Hong, Jong-ill
    • Journal of Magnetics
    • /
    • v.11 no.3
    • /
    • pp.115-118
    • /
    • 2006
  • Co-ferrite nanoparticles have been synthesized by the decomposition of iron(III) acetylacetonate, $Fe(acac)_3$ and Co acetylacetonate, $Co(acac)_2$ in benzyl/phenyl ether in the presence of oleic acid and oleyl amine at the refluxingtemperature of $295^{\circ}C$/$265^{\circ}C$ for 30 min. before cooling to room temperature. Particle diameter detected by PSA can be turned from 4 nm to 20 nm by seed-mediated growth and reaction conditions. Structural and magneticcharacterization of Co-ferrite were measured by use of HRTEM, SAED (selected area electron diffraction), XRD and SQUID. The as-synthesized Co-ferrite nanoparticles have a cubic spinel structure and coercivity of 20 nm $CoFe_{2}O_{4} nanoparticles reached 1 kOe at room temperature and 18 kOe at 10 K.

Analysis of Magnetic Isotropy Property using Magnetoresistance Curve of CoFe/Cu/CoFe/PtMn Multilayer Film (CoFe/Cu/CoFe/PtMn 다층박막의 자기저항 곡선을 이용한 자기 등방성 특성 분석)

  • Choi, Jong-Gu;Kim, Su-Hee;Choi, Sang-Heon;Lee, Sang-Suk;Rhee, Jang-Roh
    • Journal of the Korean Magnetics Society
    • /
    • v.27 no.4
    • /
    • pp.123-128
    • /
    • 2017
  • The magnetic isotropy property from the magnetoresistance (MR) curve and magnetization (MH) loop for the PtMn based spin valve (SV) multilayer films fabricated with different the bottom structure after post-annealing treatment was investigated. The exchange biased coupling field ($H_{ex}$), coercivity ($H_c$), and MR ratio of Glass/Ta(10 nm)/CoFe(6 nm)/Cu(2.5 nm)/CoFe(3 nm)/Ta(4 nm) SV multilayer film without antiferromagnetic PtMn layer are 0 Oe, 25 Oe, and 3.3 %, respectively. MR curve for the Glass/Ta(10 nm)/CoFe(6 nm)/Cu(2.5 nm)/CoFe(3 nm)/PtMn(6 nm)/Ta(4 nm) SV multilayer film showed $H_{ex}=2Oe$, $H_c=316Oe$, and MR (%) = 4.4 % with one butterfly MR curve having by the effect of antiferromagnetic PtMn layer. MR curve for the dualtype Glass/Ta(10 nm)/CoFe(6 nm)/Cu(2.5 nm)/CoFe(3 nm)/PtMn(6 nm)/CoFe(3 nm)/Cu(2.5 nm)/CoFe(6 nm)/Ta(4 nm) SV multilayer film showed $H_c=37.5Oe$ and 386 Oe, MR = 3.5 % and 6.5 % with two butterfly MR curves and square-like hysteresis MH loops. The anisotropy property in CoFe spin valve-PtMn multilayer is neglected by the effects of a very small value of $H_{ex}$ and a very slightly shape magnetic anisotropy. This result is possible to explain the effect of magnetization configuration spin array of the bottom SV film and the top SV film of PtMn layer.

Effect of sputtering conditions on the exchange bias and giant magnetoresistance in Si/Ta/NiFe/CoFe/Cu/CoFe/FeMn/Ta spin valves (스파터링 조건이 FeMn계 top 스핀 밸브의 exchange bias 및 자기적 특성에 미치는 영향)

  • Kim, K.Y.;Shin, K.S.;Han, S.H.;Lim, S.H.;Kim, H.J.;Jang, S.H.;Kang, T.
    • Journal of the Korean Magnetics Society
    • /
    • v.10 no.2
    • /
    • pp.67-73
    • /
    • 2000
  • Top spin valve samples with a structure Ta/NiFe/CoFe/Cu/CoFe/FeMn/Ta were deposited on a Si(100) substrate by changing d.c. magnetron sputtering conditions and the exchange-bias and magnetic properties of samples were investigated. The Exchange field, H$\_$ex/ increased with increase of sputtering power of FeMn from 30 to 150 W and CoFe from 30 to 100 W deposited on the Cu, the increase of H$\_$ex/ was found due to the improvement of preferred orientation of (111) FeMn phase from XRD results. In the case of Cu, H$\_$ex/ decreased with the increase of sputtering pressure ranging from 1 to 5 mTorr. The relationship between exchange field and resistance was investigated, spin valve samples with a large exchange field showed the lower resistance, which was strongly dependent on the good crystallinity and grain size increase as well as lower scattering effects. The Cu thickness was changed from 22 to 38 $\AA$ for Si/Ta/NiFe/CoFe/Cu(t), 30 W/CoFe, 100 W/FeMn, 100 W/Ta spin valve structures, MR ratio of 6.5 % and exchange field of about 190 Oe were obtained for the sample with Cu of 22 $\AA$ thickness. The increase of exchange field with decrease of Cu thickness was explained by FM/AFM spin-spin interaction.

  • PDF

MAGNETIC PROPERTIES OF CoCrPt NANODOTS ARRAY MADE BY PS-PMMA BLOCK COPOLYMER TEMPLATE (블록 공중합체를 이용한 CoCrPt 나노점 배열의 자기적 성질 연구)

  • Jeong, Jong-Ryul;Im, Mi-Young;Shin, Sung-Chul;Park, Dae-Geun;Kwon, Ki-Young;Jung, Hee-Tae;Yang, Seung-Man
    • Proceedings of the Korean Magnestics Society Conference
    • /
    • 2002.12a
    • /
    • pp.34-35
    • /
    • 2002
  • CoCrPt alloy films are attracting wide attention for applications to high-density magnetic recording media and hard magnetic layer in spin valve structure due to their high coercivity and strong magnetocrystalline anisotropy. Diblock copolymer templates are one of the most promising candidates for nanoscale patterning otherwise inaccessible by lithographic procedures [1]. In this study, we have investigated magnetic properties of Co$\sub$68/Cr$\sub$18/Pt$\sub$14/ nanodot arrays made by self-assembling polystyrene-block-methyl methacrylate ((PS-b-PMMA), (Mn = 82.5 Kg/mol, with a 1.12 polydispersity)) diblock copolymer. (omitted)

  • PDF

Soft Magnetic Property Depending on thickness of Free Layer in CoFe/Cu/CoFe/IrMn Spin Valve Film (CoFe/Cu/CoFe/IrMn 스핀밸브 박막의 자유층 두께 감소에 따른 연자성 자기저항 특성 연구)

  • Choi, Jong-Gu;Go, In-Suk;Gong, Yu-Mi;Kim, Min-Ho;Park, Young-Suk;Hwang, Do-Guwn;Lee, Sang-Suk
    • Journal of the Korean Magnetics Society
    • /
    • v.19 no.2
    • /
    • pp.52-56
    • /
    • 2009
  • Interlayer coupling field, coercivity, magnetoresitance ratio, and magnetic sensitivity depending on the thickness of free CoFe layer for the CoFe/Cu/CoFe/IrMn multilayer are investigated. In case of CoFe layer of $30\;{\AA}$ thickness for the CoFe(t)/Cu($25\;{\AA}$)/CoFe($60\;{\AA}$)/IrMn($80\;{\AA}$) multilayer with ferromagnet/non-magnet/ferromagnet structure induced by IrMn layer, the lowest coercivity and the highest magnetic sensitivity, which is contained soft magnetic property, are observed. On the other side, in case of CoFe layer of $90\;{\AA}$ thickness, there are the highest coercivity and the lowest magnetic sensitivity. The fabricated CoFe($30\;{\AA}$)/Cu($25\;{\AA}$)/CoFe($60\;{\AA}$)]/IrMn($80\;{\AA}$) spin valve device with $2{\times}8{\mu}m^2$ patterning size are measured by two probe method, which is selected the sensing current as the longitudinal direction and the easy axis as the transversal direction. The measuring magntoresistance ratio and magnetic sensitivity of GMR-SV device having the soft magnetic property are 3.0% and 0.3%/Oe, respectively.

Soft Magnetoresistive Properties of Conetic Thin Film Depending on Ta Buffer Layer (버퍼층 Ta에 의존하는 코네틱 박막의 연자성 자기저항 특성)

  • Choi, Jong-Gu;Hwang, Do-Guwn;Lee, Sang-Suk;Choi, Jin-Hyub;Lee, Ky-Am;Rhee, Jang-Rho
    • Journal of the Korean Magnetics Society
    • /
    • v.19 no.6
    • /
    • pp.197-202
    • /
    • 2009
  • The property of soft magnetism for the Corning glass/non-buffer or buffer Ta/Conetic(NiFeCuMo)/Ta prepared by the ion beam deposition sputtering was studied. The effect of crystal property and post annealing treatment depending on the thickness of Conetic thin films was investigated. The coercivities of Conetic thin films with easy and hard direction along to the applying magnetic field during deposition were compared with each other. The coercivity and magnetic susceptibility of Ta(5 nm)/Conetic(50 nm) thin film were 0.12 Oe and 1.2 ${\times}\;10^4$, respectively. From these results, firstly, the Conetic thin film was more soft magnetism thin film than other one such as permalloy NiFe. Secondly, the usage of soft magnetism Conetic thin film for GMR-SV (giant magneoresistance-spin valve) or MTJ (Megnetic Tunnel Junction) structure in a low magnetic field can be possible.