• Title/Summary/Keyword: spiking neural networks

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Tempo-oriented music recommendation system based on human activity recognition using accelerometer and gyroscope data (가속도계와 자이로스코프 데이터를 사용한 인간 행동 인식 기반의 템포 지향 음악 추천 시스템)

  • Shin, Seung-Su;Lee, Gi Yong;Kim, Hyoung-Gook
    • The Journal of the Acoustical Society of Korea
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    • v.39 no.4
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    • pp.286-291
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    • 2020
  • In this paper, we propose a system that recommends music through tempo-oriented music classification and sensor-based human activity recognition. The proposed method indexes music files using tempo-oriented music classification and recommends suitable music according to the recognized user's activity. For accurate music classification, a dynamic classification based on a modulation spectrum and a sequence classification based on a Mel-spectrogram are used in combination. In addition, simple accelerometer and gyroscope sensor data of the smartphone are applied to deep spiking neural networks to improve activity recognition performance. Finally, music recommendation is performed through a mapping table considering the relationship between the recognized activity and the indexed music file. The experimental results show that the proposed system is suitable for use in any practical mobile device with a music player.

Antidepressant drug paroxetine blocks the open pore of Kv3.1 potassium channel

  • Lee, Hyang Mi;Chai, Ok Hee;Hahn, Sang June;Choi, Bok Hee
    • The Korean Journal of Physiology and Pharmacology
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    • v.22 no.1
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    • pp.71-80
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    • 2018
  • In patients with epilepsy, depression is a common comorbidity but difficult to be treated because many antidepressants cause pro-convulsive effects. Thus, it is important to identify the risk of seizures associated with antidepressants. To determine whether paroxetine, a very potent selective serotonin reuptake inhibitor (SSRI), interacts with ion channels that modulate neuronal excitability, we examined the effects of paroxetine on Kv3.1 potassium channels, which contribute to high-frequency firing of interneurons, using the whole-cell patch-clamp technique. Kv3.1 channels were cloned from rat neurons and expressed in Chinese hamster ovary cells. Paroxetine reversibly reduced the amplitude of Kv3.1 current, with an $IC_{50}$ value of $9.43{\mu}M$ and a Hill coefficient of 1.43, and also accelerated the decay of Kv3.1 current. The paroxetine-induced inhibition of Kv3.1 channels was voltage-dependent even when the channels were fully open. The binding ($k_{+1}$) and unbinding ($k_{-1}$) rate constants for the paroxetine effect were $4.5{\mu}M^{-1}s^{-1}$ and $35.8s^{-1}$, respectively, yielding a calculated $K_D$ value of $7.9{\mu}M$. The analyses of Kv3.1 tail current indicated that paroxetine did not affect ion selectivity and slowed its deactivation time course, resulting in a tail crossover phenomenon. Paroxetine inhibited Kv3.1 channels in a use-dependent manner. Taken together, these results suggest that paroxetine blocks the open state of Kv3.1 channels. Given the role of Kv3.1 in fast spiking of interneurons, our data imply that the blockade of Kv3.1 by paroxetine might elevate epileptic activity of neural networks by interfering with repetitive firing of inhibitory neurons.

Memristors based on Al2O3/HfOx for Switching Layer Using Single-Walled Carbon Nanotubes (단일 벽 탄소 나노 튜브를 이용한 스위칭 레이어 Al2O3/HfOx 기반의 멤리스터)

  • DongJun, Jang;Min-Woo, Kwon
    • Journal of IKEEE
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    • v.26 no.4
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    • pp.633-638
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    • 2022
  • Rencently, neuromorphic systems of spiking neural networks (SNNs) that imitate the human brain have attracted attention. Neuromorphic technology has the advantage of high speed and low power consumption in cognitive applications and processing. Resistive random-access memory (RRAM) for SNNs are the most efficient structure for parallel calculation and perform the gradual switching operation of spike-timing-dependent plasticity (STDP). RRAM as synaptic device operation has low-power processing and expresses various memory states. However, the integration of RRAM device causes high switching voltage and current, resulting in high power consumption. To reduce the operation voltage of the RRAM, it is important to develop new materials of the switching layer and metal electrode. This study suggested a optimized new structure that is the Metal/Al2O3/HfOx/SWCNTs/N+silicon (MOCS) with single-walled carbon nanotubes (SWCNTs), which have excellent electrical and mechanical properties in order to lower the switching voltage. Therefore, we show an improvement in the gradual switching behavior and low-power I/V curve of SWCNTs-based memristors.