• 한국산학기술학회논문지
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• 제13권2호
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• pp.492-497
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• 2012

본 논문에서는 $Cs_2NaCeBr_6$ 엘파소라이트 단결정의 섬광 및 열형광 특성에 대하여 조사하였다. $Cs_2NaCeBr_6$의 형광스펙트럼은 $Ce^{3+}$ 이온의 $4f{\rightarrow}5d$ 천이에 따라 파장범위가 300 ~ 450 nm, 피이크 파장은 377 nm 및 400 nm이었다. 형광감쇠시간 특성은 140 ns의 빠른 시간 특성 성분(94%)과 880 ns의 느린 성분(6%)의 2개로 구성된다. 잔광에 기여한 포획준위의 물리적 변수를 열형광측정법에서 측정한 결과, 포획준위의 활성화에너지, 발광차수 및 주파수 인자는 각각 0.67 eV, 1.71 및 $2.51{\times}10^8s^{-1}$이었으며, 이는 여기된 전자의 재포획율보다는 재결합율이 더 우세하기 때문인 것으로 사료된다.

• Bulletin of the Korean Chemical Society
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• 제33권2호
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• pp.541-548
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• 2012

New candidates composed of anthracene and 4-alkylethynylbenzene end-capped oligomers for OTFTs were synthesized under Sonogashira coupling reaction conditions. All oligomers were characterized by FT-IR, mass, UV-visible, and PL emission spectrum analyses, cyclic voltammetry (CV), differential scanning calorimetry (DSC), thermal gravimetric analysis (TGA), $^1H$-NMR, and $^{13}C$-NMR. Investigation of their physical properties showed that the oligomers had high oxidation potential and thermal stability. Thin films of DHPEAnt and DDPEAnt were characterized by spin coating them onto Si/$SiO_2$ to fabricate top-contact OTFTs. The devices prepared using DHPEAnt and DDPEAnt showed hole field-effect mobilities of $4.0{\times}10^{-3}cm^2$/Vs and $2.0{\times}10^{-3}cm^2$/Vs, respectively, for solution-processed OTFTs.

• Bulletin of the Korean Chemical Society
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• 제33권2호
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• pp.492-498
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• 2012

A hyper branched 10-butylphenothiazine with in-situ thermally curable methacrylate (1,3,5-tris-[$\{$10-Butyl-3-(4-(2-methyl-acryloyloxy)-phenyl)-7-yl-10H-phenothiazine$\}$]-benzene, (tris-PTMA)) was synthesized successfully. From the TGA thermogram of tris-PTMA was thermally stable up to $336^{\circ}C$. In the first heating scan of DSC thermogram, tris-PTMA showed glass transition temperature (Tg) at $140^{\circ}C$ and broad endothermic process in the region of $144-179^{\circ}C$, which is thermally curing temperature. In the second heating process, $T_g$ exhibited at $158.7^{\circ}C$ and endothermic process was not observed. Thermally cured tris-PTMA showed no big change in the UV-visible spectrum after washing with organic solvent such as methylene chloride, chloroform, toluene, indicating that thermally cured film was very good solvent resistance. Thermally cured tris-PTMA was electrochemically stable and the HOMO energy level of tris-PTMA was -5.54 eV. The maximum luminance efficiency of double layer structured polymer light-emitting diode based on in-situ thermally cured tris-PTMA was 0.685 cd/A at 16.0 V, which was higher than that of the device without thermally cured tris-PTMA (0.348 cd/A at 15.0 V).

• Macromolecular Research
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• 제17권5호
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• pp.319-324
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• 2009

A new $\pi$-conjugated polymer, poly[(2-methoxy-(5-(2-(4-oxyphenyl)-5-phenyl-1,3,4-oxadiazole)-hexyloxy))-1,4-pheny1ene-1,2-etheny1ene-alt-(10-hexyl-3,7-phenothiazine )-1,2-ethenylene] (PTOXDPPV), was synthesized by the Heck coupling reaction. The electron transporting unit, conjugated 1,3,4-oxadiazo1e (OXD), is attached on the main chain via linear 1,6-hexamethylenedioxy chain. The band gap and photoluminescence (PL) maximum of PTOXDPPV are 2.35 eV and 565 nm, respectively. These values are very close to those of po1y[(2,5-didecyloxy-1,4-phenylene-1,2-etheny1ene )-alt-(l0-hexyl-3,7-phenothiazine)-1,2-ethenylene] (PTPPV), which does not have OXD pendant. The estimated HOMO energy level of PTOXDPPV was -4.98 eV, which is very close to that of PTPPV (-4.91 eV). The maximum wavelength of EL device based on PTOXDPPV and PTPPV appeared at 587 and 577 nm, respectively. In the PL and EL spectrum, the emission from OXD pendant was not observed. This indicates that the energy transfer from OXD pendants to main chain is occurred completely. The EL device based on PTOXD-PPV (ITO/PEDOT/PTOXDPPV/AI) has an efficiency of 0.033 cd/A, which is significantly higher than the device based on PTPPV (ITO/PEDOT/PTPPV/AI) ($4.28{\times}10^{-3}\;cd/A$). From the results, we confirm that the OXD pendants in PTOXDPPV facilitate hole-electron recombination processes in the emissive layer effectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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• pp.27-28
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• 2008

We have studied an organic layer-thickness dependent electrical and optical properties of organic light-emitting diodes in a device structure of ITO/TPD/$Alq_3$/LiF/Al. While a hole-transport layer thickness of TPD was varied from 35 to 65nm, an emissive layer thickness of $Alq_3$ was varied from 50 to 100nm. A ratio of those two layers was kept to about 2:3. Variation of the layer thickness changes a traverse time of injected carriers across the organic layer, so that it may affect on the chance of probability of exciton formation. Current-voltage-luminance characteristics of the devices show that there are typical rectifying behaviors, and the luminance reaches about $30,000cd/m^2$. Thickness-dependent current efficiency shows that there is a gradual increase of the efficiency as the total layer thickness increases. The efficiency becomes saturated to be about 10cd/A when the total thickness is above 140nm. They show that emission was from the $Alq_3$ layer, because the peak wavelength is about 525nm. View angle-dependent emission spectra show that the emission intensity decreases as the angle increases.

• 조명전기설비학회논문지
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• 제19권6호
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• pp.36-45
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• 2005

이 논문은 다른 종류의 유도전동기 구름베어링 손상을 유도전동기 고정자 전류신호해석을 통하여 검출하고 실시간으로 손상을 진단하는 알고리즘을 개발하였다. 유도전동기 구름베어링의 손상을 검출하기 위하여 정상적인 베어링을 갖는 유도전동기, 측정열에 불량을 가지고 있는 전동기와 베어링 외륜에 구멍을 가지고 있는 2가지 종류의 비정상 베어링을 갖는 유도전동기 3set를 실험시스템을 구축하였다. 또한 유도전동기의 구름베어링시스템의 비정상적인 상태에서 고정자전류을 검출하기 위하여 TMS320F2407 DSP 칩을 이용하여 데이터 획득보드를 개발하였다. 이 고정자전류신호를 해석을 통하여 베어링 손상을 검출하기 위한 방법으로 FFT, 웨이브렛 분석 및 내적에 의한 평균 신호패던에 의한 분석결과를 제시하였다. 특히 내적에 의한 신호분석 온 통하여 베어링 손상 여부를 실시간으로 진단할 수 있는 새로운 알고리즘과 분석방법을 제시하였다.

• Transactions on Electrical and Electronic Materials
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• 제5권3호
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• pp.89-92
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• 2004

For improving solar efficiencies, down conversion of high-energy photons to visible lights is discussed. The losses due to thermalization of charge carriers generated by the absorption of high-energy photons, can largely be reduced in a solar cell if more than one electron-hole pair can be generated per incident photon. The solar cell was constructed of dye-sensitized anatase-based TiO$_2$, approximately 30nm particle size, 6$\mu\textrm{m}$thickness, and 6${\times}$6$\textrm{mm}^2$ active area, Pt counter electrode and I$_3$$\^$-/I$_2$$\^$-/ electrolyte. After correction for losses due to light reflection and absorption by the conducting glass, the conversion of photons to electric current is practically quantitative in the plateau region of the curves. The incident photon to current conversion efficiency(IPCE) of N3 used as a dye in this work is about 80% at around 590nm and 610nm which is the emission spectrum of Eu doped LGF. The Eu doped LGF powder was prepared by conventional ceramic process, and used as a down converter for DSC after spin coated on the slide glass and fired.

• 한국음향학회지
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• 제14권1호
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• pp.73-80
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• 1995

본 논문에서는 Polarity Thresholding(PT) 알고리즘을 원자력 발전소의 중요 배관 재료인 스테인레스강(SUS-304) 탐상에 응용하여 초음파 수신신호를 개선시키는 방법을 연구하였다. PT 알고리즘은 수신신호의 스펙트럼을 분할하여 얻은 각각의 주파수분할 신호들이 갖는, 결정립에 의한 간섭패턴의 분산적 신호와 결함에 의한 비분산적 신호를 구분하여 S/N 비를 개선시키는 것이다. 실험을 위하여, 실제 검사부위의 특성과 유사하게 스테인레스강을 각각 1125, 1150, 1175, $1200^\circ{C}$로 열처리하였고, 시료의 배면에 원통형 결함을 인공 가공하였다. 중심주파수가 5MHz인 초음파변환기를 사용하여, 펄스-반사법에 의해 데이터를 획득한 후 PT 알고리즘을 적용한 결과 개선된 S/N 비는 평균 14.2 dB로 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.320-320
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• 2014

Amorphous silicon alloy (a-Si) solar cells and modules have been receiving a great deal of attention as a low-cost alternate energy source for large-scale terrestrial applications. Key to the achievement of high-efficiency solar cells using the multi-junction approach is the development of high quality, low band-gap materials which can capture the low-energy photons of the solar spectrum. Several cell designs have been reported in the past where grading or buffer layers have been incorporated at the junction interface to reduce carrier recombination near the junction. We have investigated profiling the composition of the a-SiGe alloy throughout the bulk of the intrinsic material so as to have a built-in electrical field in a substantial portion of the intrinsic material. As a result, the band gap mismatch between a-Si:H and $a-Si_{1-x}Ge_x:H$ creates a barrier for carrier transport. Previous reports have proposed a graded band gap structure in the absorber layer not only effectively increases the short wavelength absorption near the p/i interface, but also enhances the hole transport near the i-n interface. Here, we modulated the GeH4 flow rate to control the band gap to be graded from 1.75 eV (a-Si:H) to 1.55 eV ($a-Si_{1-x}Ge_x:H$). The band structure in the absorber layer thus became like a U-shape in which the lowest band gap was located in the middle of the i-layer. Incorporation of this structure in the middle and top cell of the triple-cell configuration is expected to increase the conversion efficiency further.

• 한국통신학회논문지
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• 제34권8C호
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• pp.822-829
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• 2009

본 논문은 선형예측 전처리기을 이용하여 저 전송률 환경에 적합한 HE-AAC의 구조를 제안한다. 저 전송률 환경에서는 HE-AAC의 적절하지 못한 비트 할당 알고리즘 때문에 많은 스펙트럴 홀(스펙트럼 홀)들이 발생을 하고 있으며, 그로 인해서 심각한 음질의 열화가 발생하고 있다. 이를 해결하기 위해서 선형예측 전처리기을 사용하여 저 전송률에서 비트가 적절하게 할당되도록 하였다. HE-AAC로 들어오는 입력신호는 선형예측 전처리기에 의해서 LP 계수와 레지듀얼 신호로 나눠지게 되며, AAC 부분은 분리된 레지듀얼 신호를 부호화하게 된다. 제안된 방법의 성능 평가를 위해서 지각적 잡음(Perceptual noise)의 측정을 통한 객관적인 실험과 MUSHRA 테스트를 통한 주관적인 실험을 하였고, 그 결과 저 전송률 환경에서 제안된 방법을 사용함으로써 성능을 향상시킬 수 있음을 확인하였다.