• Transactions of the Korean Society of Pressure Vessels and Piping
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• v.16 no.1
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• pp.30-36
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• 2020

In SMART, the flow mixing header assembly (FMHA) is used to mix the coolant flowing into the reactor core to maintain a uniform temperature. The FMHA is designed to have enough stiffness so the resonance with reactor internal structures does not occurs during the pipe break and the seismic accidents. Since the gap between the FMHA and the core support barrel assembly is very narrow compared with the diameter of FMHA, the hydrodynamic mass effect acting on the FMHA is not negligible. Therefore the hydrodynamic mass characteristics on the FMHA are investigated to consider the fluid and structure interaction effects. The result of modal analysis for the dry and underwater conditions, the natural frequency of primary vibration mode for the horizontal direction is reduced from 136.67 Hz to 43.76 Hz. Also the result of frequency response spectrum seismic analysis for the dry and underwater conditions, the maximum equivalent stress are increased from 13.89 MPa to 40.23 MPa. Therefore, reactor internal structures located in underwater condition shall consider carefully the hydrodynamic mass effects even though they have sufficient stiffness required for performing its functions under the dry condition.

• Journal of Microbiology and Biotechnology
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• v.13 no.5
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• pp.773-777
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• 2003

The color of Congo red hinders the spectrometric measurements of a concentration of hydrogen peroxide and enzyme activity (Horseradish peroxidase; HRP) during enzymatic decoloring of Congo red. In this study, a method was developed to measure peroxidase activity and hydrogen peroxide concentration in the presence of Congo red. The oxidation product of HRP/hydrogen peroxide and ABTS(2,2'-azino-bis-(3-ethylbenzotriazoline-6-sulfonic acid)) formed a dark green color. The spectrum of this product showed absorption bands at 420 nm and 734 nm. When compared with the Congo red spectrum, the absorption at 734 nm of this product did not overlap with Congo red, thus making the hydrogen peroxide measurement possible even in the presence of Congo red. Kinetic study of decoloring of Congo red performed by this method showed that the decoloring reaction followed the Michaelis-Menten kinetics. Pulse feeding of hydrogen peroxide, upon depletion, significantly increased the decoloring of Congo red. This result shows that this newly developed technique can monitor, predict, and improve the enzymatic decoloring process.

• Bulletin of the Korean Chemical Society
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• v.25 no.5
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• pp.652-656
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• 2004

A new luminescent polymer, poly{1,4-phenylene-1,2-ethenediyl-2'-[2"-(4'"-octyloxyphenyl)-(5"-yl)-1",3",4"-oxadiazole]-1,4-phenylene-1,2-ethenediyl-2,5-bis-dodecyloxy-1,4-phenylene-1,2-ethenediyl} (Oxd-PPV), was synthesized by the Heck coupling reaction. Electron withdrawing pendant, conjugated 1,3,4-oxadiazole (Oxd), is on the vinylene unit. The band gap of the polymer figured out from the UV-visible spectrum was 2.23 eV and the polymer film shows bright yellow emission maximum at 552 nm. The electroluminescence (EL) maximum of double layer structured device (ITO/PEDOT:PSS/Oxd-PPV/Al) appeared at 553 nm. Relative PL quantum yield of Oxd-PPV film is 3.6 times higher than that of MEH-PPV film. The HOMO and LUMO energy levels of Oxd-PPV figured out from the cyclic voltammogram and the UV-visible spectrum are -5.32 and -3.09 eV, respectively, so that more balanced hole and electron injection efficiency can be expected compared to MEH-PPV. A double layer EL of Oxd-PPV has an maximum efficiency of 0.15 cd/A and maximum brightness of 464 cd/$m^2$.

• Korean Journal of Materials Research
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• v.25 no.2
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• pp.100-106
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• 2015

Plasma properties of dielectric barrier discharges (DBDs) at atmospheric pressure were measured and characterized using optical emission spectroscopy. Optical emissions were measured from argon, nitrogen, or air discharges generated at 5-9 kV using 20 kHz power supply. Emissions from nitrogen molecules were markedly measured, irrespective of discharge gases. The intensity of emission peaks was increased with applied voltage and electrode gap. The short wavelength peaks (315.9 nm and 337.1 nm) measured at the middle of DBDs were significantly increased with applied voltage. The optical emission from DBDs decreased with the addition of oxygen gas, which was especially significant in argon discharge. Emission from oxygen molecules cannot be measured from air discharge and argon discharge with 4.8% oxygen. The emission intensity at 337.1 nm and 357.7 nm related with nitrogen molecule was sensitively changed with electrode types and discharge voltages. However, the pattern of argon emission spectrum was nearly the same, irrespective of electrode type, oxygen content, and discharge voltage.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.209-210
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• 2006

We have successfully termed brown colored patterns inside of a transparent borosilicate glass generally known as BK7, laying the focus of near infrared Ti: sapphire femtosecond laser beam in the bulk BK7 glass. It is important to keep the laser power well below the damage threshold of BK7 in forming the color center. Thanks to the low laser power, there was no laser induced mechanical damage such as cracks or threads in the color formed area. From the absorbance spectrum and its gaussian fitting, we found the band gap of BK7, 4.21eV, and three absorption edges.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.481-484
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• 1999

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. These crystals were obtained by lowering the quartz ampoule for growth in the furnace and growth rate at optimum condition is 0.4mm/hr. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes together with their overtones and combinations were observed. Optical properties were investigated by photoluminescence at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undoped-lnSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution.

• Journal of Electrical Engineering and Technology
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• v.7 no.6
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• pp.965-970
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• 2012

Structure and optical properties of cadmium sulphide-zinc oxide composite nanorods have been evaluated by suitable characterization techniques. The X-ray diffraction spectrum contains a series of peaks corresponding to reflections from various sets of lattice planes of hexagonal ZnO as well as CdS. The above observation is supported by the Micro-Raman spectroscopy result. The optical reflectance spectra of CdS-ZnO is compared with that of ZnO where we observe an enhanced absorption and hence diminished reflection from CdS-ZnO compared to that from only ZnO. A very small intensity of the visible photoluminescence peak observed at 550 nm proves that the ZnO nanorods have very low concentrations of point defects such as oxygen vacancies and zinc interstitials. The photocurrent in the visible region has been significantly enhanced due to deposition of CdS on the surface of the ZnO nanorods. CdS acts as a visible sensitizer because of its lower band gap compared to ZnO.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.464-467
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• 1999

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes and together with their overtones and combinations were observed. Optical properties were inves ated by PL at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undo&-InSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution. The Zn diffusion mechanism in InSe could be explained by interstitial-substitutional and vacancy complex models and the activation energy of 1.15-3.01eV were needed for diffusion.fusion.

• Journal of the Korean Institute of Telematics and Electronics
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• v.19 no.5
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• pp.1-4
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• 1982

Single crystals of InSe were obtained by the Bridgman method. The crystal structure was hombohedral(R3m) with lattice paramete. a=4.02A, c=24.96A. At 300$^{\circ}$K the electrical conductivity was about ~10-2($\Omega$.cm)-1, reslpectively. The electrical conductivity type was n- type. The donor level located at 0.072eV below the conduction band. The Photosensitivity was observed in range from 840nm to 1120nm. The energy gap of InSe single crystal measured from the photoconductivity and the optical transmittance spectrum was 1.20eV, 1.21eV, respectively.

• Laser Solutions
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• v.8 no.3
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• pp.5-10
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• 2005

[ $InxGa_{1-x}P/GaAs$ ] structures were grown by chemical beam epitaxy(CBE), Pure phosphine($PH_3$) gases were used as group V sources. for the group III sources, TEGa, TmIn were used. $InxGa_{1-x}P$ epilayer was grown on SI-GaAs substrate and has a 1-${\mu}m$ thick. We have investigated the characteristics of $InxGa_{1-x}P$ by the photoreflectance(PR) spectroscopy, The PR spectrum of $InxGa_{1-x}P$ shows third-derivative feature whose Peaks Provide energy gap. The energy gap of $InxGa_{1-x}P$ has deduced composition x. From temperature dependance of PR spectra, temperature coefficient is $dEg/dT=-3.773{\times}10^{-4}$ eV/K, and Varshni coefficients $\alpha$ and $\beta$ values obtained $4{\times}10^4$ eV/K and 267 K respectively. Also, interaction $\alpha$B was 19.4 meV using the Bose-Einstein temperature relation, and $\Theta$ value related the average phonon frequency were 101.4 K. In particular, shoulder peak related to defects observed in PR signal that measured in temperature 82 K.