• Title/Summary/Keyword: spectrum gap

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A Time Domain Calculation for the TLP(Tension Leg Platform) (인장각 플랫폼(Tension Leg Platform)에 대한 시간 영역 계산)

  • Park, Tae-Hyun;Cho, Jin-Wook
    • Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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    • 2002.10a
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    • pp.256-260
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    • 2002
  • This report summarizes the results of global performance analysis of TLP(Tension Leg Platform) at in-place operation condition. The frequency and time domain analysis were performed to calculate the wave induced dynamic responses of TLP using the commercial 3-D diffraction program, MOSES. As results of the analysis, air-gap, excursion and tension on the tendons&risers were provided. For verifying, the existed numerical and experimental result were compared with the results of the present study.

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Optical proper of S solute CuInSe$_2$ thin film (S를 고용한 CuInSe$_2$ 박막의 광학 특성)

  • 김규호;이재춘;김민호;배인호
    • Journal of the Korean institute of surface engineering
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    • v.30 no.2
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    • pp.136-143
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    • 1997
  • The photvoltaic power system has received considerable attention as the petroleumalterative energies to the environmental problems in the wored scale. $CuLnSe_2$is one ofthe most promising materials for the fabrication of large-area modules and low cost photovoltaic devices. Sulfur solute CuInSe2 thin films were prepared by RF sputtering using powder targer which were previously compacted by powder of $Cu_2Se, \;In_2Se_3, \;Cu_2S, \;and\;In_2S_3$ in various ratios. The results induicated that the sulfur ratio, the(112) texture, and the energy band gap were increased by the increase of the S/(S+Se) that was controlled by stoichiometric compound. The energy band gap can be shifted from 1.04eV to 1.50eV by abjusting the S/(S+Se) ratio, which maich it possible to obtain perfect match to the solar spectrum.

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Depth-profiling of skin in the near infrared using fiber optic probes

  • Woo, Young-Ah;Ahn, Jhii-Weon;Suh, Eun-Jung;Kim, Hyo-Jin
    • Proceedings of the PSK Conference
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    • 2002.10a
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    • pp.235.1-235.1
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    • 2002
  • In previous study, we showed the feasibility of the in vivo use of portable near infrared system for the determination of human skin moisture. In order to optimize the acquiring condition of NIR spectrum of skin. skin depth profiling was investigated changing the distance and gap size between illumination and receiving of radiation in the terminal of fiber probe. The colleted light information could be controlled depending the distance and gap of fiber optic probe. (omitted)

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High-frequency Approximate Formulation for the Prediction of Broadband Noise of Airfoil Cascades with Inflow Turbulence (유입 난류에 의한 에어포일 캐스케이드 광대역 소음장의 고주파 근사 예측식의 개발)

  • Jung, Sung-Soo;Cheung, Wan-Sup;Lee, Soogab;Cheong, Cheolung
    • Transactions of the Korean Society for Noise and Vibration Engineering
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    • v.15 no.10 s.103
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    • pp.1177-1185
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    • 2005
  • This paper investigates the noise radiated by a cascade of flat-plate airfoils interacting with homogeneous, isotropic turbulence. At frequencies above the critical frequency, all wavenumber components of turbulence excite propagating cascade modes, and cascade effects are shown to be relatively weak. In this frequency range, acoustic power was shown to be approximately proportional to the number of blades. Based on this finding at high frequencies, an approximate expression is derived for the power spectrum that is valid above the critical frequency and which is in excellent agreement with the exact expression for the broadband power spectrum. The approximate expression shows explicitly that the acoustic Power above the critical frequency is proportional to the blade number, independent of the solidity, and varies with frequency as ${\phi}_{ww}(\omega/W$), where ${\phi}_{ww}$ is the wavenumber spectrum of the turbulence velocity and W is mean-flow speed. The formulation is used to perform a parametric study on the effects on the power spectrum of the blade number stagger angle, gap-chord ratio and Mach number. The theory is also shown to provide a close fit to the measured spectrum of rotor-stator interaction when the mean square turbulence velocity and length-scale are chosen appropriately.

Development & Reliability Verification of Ultra-high Color Rendering White Artificial Sunlight LED Device using Deep Blue LED Light Source and Phosphor (Deep Blue LED 광원과 형광체를 이용한 초고연색 백색 인공태양광 LED 소자의 개발)

  • Jong-Uk An;Tae-Kyu Kwon
    • Journal of Korean Society of Industrial and Systems Engineering
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    • v.46 no.3
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    • pp.59-68
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    • 2023
  • Currently, yellow phosphor of Y3Al5O12:Ce3+ (YAG:Ce) fluorescent material is applied to a 450~480nm blue LED light source to implement a white LED device and it has a simple structure, can obtain sufficient luminance, and is economical. However, in this method, in terms of spectrum analysis, it is difficult to mass-produce white LEDs having the same color coordinates due to color separation cause by the wide wavelength gap between blue and yellow band. There is a disadvantage that it is difficult to control optical properties such as color stability and color rendering. In addition, this method does not emit purple light in the range of 380 to 420nm, so it is white without purple color that can not implement the spectrum of the entire visible light spectrum as like sunlight. Because of this, it is difficult to implement a color rendering index(CRI) of 90 or higher, and natural light characteristics such as sunlight can not be expected. For this, need for a method of implementing sunlight with one LED by using a method of combining phosphors with one light source, rather than a method of combining red, blue, and yellow LEDs. Using this method, the characteristics of an artificial sunlight LED device with a spectrum similar to that of sunlight were demonstrated by implementing LED devices of various color temperatures with high color rendering by injecting phosphors into a 405nm deep blue LED light source. In order to find the spectrum closest to sunlight, different combinations of phosphors were repeatedly fabricated and tested. In addition, reliability and mass productivity were verified through temperature and humidity tests and ink penetration tests.

Computer-simulation with Different Types of Bandgap Profiling for Amorphous Silicon Germanium Thin Films Solar Cells

  • Jo, Jae-Hyeon;Lee, Jun-Sin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.320-320
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    • 2014
  • Amorphous silicon alloy (a-Si) solar cells and modules have been receiving a great deal of attention as a low-cost alternate energy source for large-scale terrestrial applications. Key to the achievement of high-efficiency solar cells using the multi-junction approach is the development of high quality, low band-gap materials which can capture the low-energy photons of the solar spectrum. Several cell designs have been reported in the past where grading or buffer layers have been incorporated at the junction interface to reduce carrier recombination near the junction. We have investigated profiling the composition of the a-SiGe alloy throughout the bulk of the intrinsic material so as to have a built-in electrical field in a substantial portion of the intrinsic material. As a result, the band gap mismatch between a-Si:H and $a-Si_{1-x}Ge_x:H$ creates a barrier for carrier transport. Previous reports have proposed a graded band gap structure in the absorber layer not only effectively increases the short wavelength absorption near the p/i interface, but also enhances the hole transport near the i-n interface. Here, we modulated the GeH4 flow rate to control the band gap to be graded from 1.75 eV (a-Si:H) to 1.55 eV ($a-Si_{1-x}Ge_x:H$). The band structure in the absorber layer thus became like a U-shape in which the lowest band gap was located in the middle of the i-layer. Incorporation of this structure in the middle and top cell of the triple-cell configuration is expected to increase the conversion efficiency further.

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Fabrication of Semiconductor Devices and Its Characteristics for $MgGa_{2-x}In_xSe_4$ Single Crystals ($MgGa_{2-x}In_xSe_4$ 단결정을 이용한 광전반도체소자 제작과 그 특성 연구)

  • 김형곤;김화택
    • Journal of the Korean Vacuum Society
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    • v.2 no.1
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    • pp.65-72
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    • 1993
  • MgGa2-xInxSe4 single crystal을 bridgman technique로 성장시켰다. 성장된 단결정은 rhombohedral 구조를 가지고 있었으며, lattice constant는 a=3.950~4.070$\AA$, c=38.89~39.50$\AA$으로 주어졌고, 높은 photoconductivity를 가지고 있었다. 이 단결정의 energy gap은 2.20~1.90eV이었고, photoconductivity spectrum에 peak의 energy는 2.31~2.01eV로 주어졌으며, photoconductivity의 time constant는 0.24~0.34sec로 주어졌다.

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Measurement of CO Q-branch Raman Spectrum by using High Resolution Inverse Raman Spectrometer (고분해능 Inverse 라만 분광기를 이용한 CO Q-branch 라만 분광 측정)

  • 한재원
    • Proceedings of the Optical Society of Korea Conference
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    • 1989.02a
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    • pp.59-64
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    • 1989
  • Raman vibrational Q0branch spectra of pure CO are measured by using the technique of quasicw inverse Raman spectroscopy utilizing a pulsed single-frequency laser source. This approach gives enhanced sensitivity compared to earlier work which employed CW lasers, allowing extension of that work to higher accuracy, higher J states, and higher pressure. Fitting laws with pertubation theory and modified energy gap(MEG) theory are described, and the line broadening and shifting coefficients of J=0 to 24 are determined with both fitting laws.

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Phase Behaviors of the GAP/PTMG Polyurethanes Chain Extended with 3-Azidopropane-1,2-Diol (3-Azidopropane-1,2-diol로 쇄연장된 GAP/PTMG 폴리우레탄의 상거동)

  • Kim, Hyoung-Sug;You, Jong-Sung;Kweon, Jung-Ohk;Kim, Jung-Su;Lee, Tong-Sun;Noh, Si-Tae;Jang, Young-Ok;Kim, Dong-Kuk;Kwon, Sun-Kil
    • Applied Chemistry for Engineering
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    • v.21 no.4
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    • pp.377-384
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    • 2010
  • We perform a comparative study to investigate the properties of the new energetic chain extender (AzPD). A series of poly(glycidyl azide)/poly(tetramethylene oxide)-based energetic segmented polyurethane (GAP/PTMG ESPU) with different chain extender, which is 3-azidopropane-1,2-diol (AzPD), 1,4-butane diol (1,4-BD), or 1,5 pentane diol (1,5-PD), was synthesized by solution polymerization in dimethyl formamide (DMF) and their phase behaviors were investigated. The ESPUs were characterized with Fourier transform infrared-attenuated total reflection spectroscopy (ATR FT-IR), differential scanning calorimetry (DSC), and dynamic mechanical analysis (DMA). The results of the ATR FT-IR analysis of the urethane carbonyl group region showed that the 'free' C=O fraction was higher in GAP/PTMG AzESPU (0.5) than GAP/PTMG BDESPU (0.44) and GAP/PTMG PDESPU (0.41) for 7 days samples after preparation and that it was similar in the range of 0.26~0.29 for three 60 days ESPU samples. DMA curves of the GAP/PTMG AzESPU for 7 days samples showed amorphous polymers, but GAP/PTMG BDESPU and GAP/PTMG PDESPU showed viscoelastic behaviors with rubbery plateau and the flow region. However, DMA curves of the GAP/PTMG AzESPU for 60 days samples showed viscoelastic behaviors with rubbery plateau and the flow region like GAP/PTMG PDESPU, but GAP/PTMG BDESPU did not show the flow region. From phase behaviors with ATR FT-IR, DSC and DMA analysis, GAP/PTMG AzESPU showed good phase-mixing between components. However, it represented viscoelastic behavior of TPE similar to GAP/PTMG PDESPM according to phase equilibrium progress with aging time.

Temperature dependence of photocurrent for the AgInS2 epilayers grown by hot wall epitaxy (Hot Wall Epitaxy 방법에 의해 성장된 AgInS2 박막의 광전류 온도 의존성)

  • Park, Chang-Sun;Hong, Kwang-Joon;Lee, Sang-Youl;You, Sang-Ha;Lee, Bong-Ju
    • Journal of Sensor Science and Technology
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    • v.16 no.1
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    • pp.1-6
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    • 2007
  • A silver indium sulfide ($AgInS_{2}$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_{2}$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_{2}$ was investigated by means of the photocurrent measurement. The crystal field splitting, ${\Delta}cr$, and the spin orbit splitting, ${\Delta}so$, have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_{g}$(T), was determined.