• Title/Summary/Keyword: source resistance

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The electrochemical properties of PVD-grown WC-( $Ti_{1-x}$A $I_{x}$)N multiplayer films in a 3.5% NaCl solution

  • Ahn, S.H.;Yoo, J.H.;Kim, J.G.;Lee, H.Y.;Han, J.G.
    • Journal of Surface Science and Engineering
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    • v.34 no.5
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    • pp.435-444
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    • 2001
  • WC-( $Ti_{1-x}$ A $l_{x}$) N coatings of constant changing Al concentration were deposited on S45C substrates by high-ionization sputtered PVD method. The Al concentration could be controlled by using evaporation source for Al and fixing the evaporation rate of the metals (i.e, WC- $Ti_{0.86}$A $l_{0.14}$N, WC- $Ti_{0.72}$A $l_{0.28}$N, and WC- $Ti_{0.58}$A $l_{0.42}$N). The corrosion behavior of WC-( $Ti_{1-x}$ A $l_{x}$)N coatings in a deaerated 3.5% NaCl solution was investigated by electrochemical corrosion tests and surface analyses. The measured galvanic corrosion currents between coating and substrate indicated that WC- $Ti_{0.72}$A $l_{0.28}$N coating showed the best resistance of the coating tested. The results of potentiodynamic polarization tests showed that the WC- $Ti_{0.72}$A $l_{0.28}$N coating deposited with 32W/c $m^2$ of Al target revealed higher corrosion resistance. This indicated that the WC- $Ti_{0.72}$A $l_{0.28}$N coating is effective in improving corrosion resistance. In EIS, the WC- $Ti_{0.72}$A $l_{0.28}$N coating showed one time constant loop and increased a polarization resistance of coating ( $R_{coat}$) relative to other samples. Compositional variations of WC-( $Ti_{1-x}$ A $l_{x}$)N coatings were analyzed by EDS and XRD analysis was performed to evaluate the crystal structure and compounds formation behavior. Surface morphologies of the films were observed using SEM and AFM. Scratch test was performed to measure film adhesion strength.strength. adhesion strength.strength.

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Whole genome sequencing analysis on antibiotic-resistant Escherichia coli isolated from pig farms in Banten Province, Indonesia

  • Hadri Latif;Debby Fadhilah Pazra;Chaerul Basri;I Wayan Teguh Wibawan;Puji Rahayu
    • Journal of Veterinary Science
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    • v.25 no.3
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    • pp.44.1-44.13
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    • 2024
  • Importance: The emergence and rapid increase in the incidence of multidrug-resistant (MDR) bacteria in pig farms has become a serious concern and reduced the choice of effective antibiotics. Objective: This study analyzed the phylogenetics and diversity of antibiotic resistance genes (ARGs) and molecularly identified the source of ARGs in antibiotic-resistant Escherichia coli isolated from pig farms in Banten Province, Indonesia. Methods: Forty-four antibiotic-resistant E. coli isolates from fecal samples from 44 pig farms in Banten Province, Indonesia, were used as samples. The samples were categorized into 14 clusters. Sequencing was performed using the Oxford Nanopore Technologies MinION platform, with barcoding before sequencing with Nanopore Rapid sequencing gDNA-barcoding (SQK-RBK110.96) according to manufacturing procedures. ARG detection was conducted using ResFinder, and the plasmid replicon was determined using PlasmidFinder. Results: Three phylogenetic leaves of E. coli were identified in the pig farming cluster in Banten Province. The E. coli isolates exhibited potential resistance to nine classes of antibiotics. Fifty-one ARGs were identified across all isolates, with each cluster carrying a minimum of 10 ARGs. The ant(3'')-Ia and qnrS1 genes were present in all isolates. ARGs in the E. coli pig farming cluster originated mainly from plasmids, accounting for an average of 89.4%. Conclusions and Relevance: The elevated potential for MDR events, coupled with the dominance of ARGs originating from plasmids, increases the risk of ARG spread among bacterial populations in animals, humans, and the environment.

An Efficiency Improvement of the OLEDs due to the Thickness Variation on Hole-Injection Materials (정공주입물질 두께 변화에 따른 유기발광다이오드의 효율 개선)

  • Shin, Jong-Yeol;Guo, Yi-Wei;Kim, Tae-Wan;Hong, Jin-Woong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.5
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    • pp.344-349
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    • 2015
  • A new information society of late has arrived by the rapid development of various information & communications technologies. Accordingly, mobile devices which are light and thin, easy and convenient to carry on the market. Also, the requirements for the larger television sets such as fast response speed, low-cost electric power, wider visual angle display are sufficiently satisfied. The currently most widely studied display material, the Organic Light-emitting Diodes(OLEDs) overwhelms the Liquid Crystal Display(LCD), the main occupier of the market. This new material features a response speed of more than a thousand times faster, no need of backlight, a low driving voltage, and no limit of view angle. And the OLEDs has high luminance efficiency and excellent durability and environment resistance, quite different from the inorganic LED light source. The OLEDs with simple device structure and easy produce can be manufactured in various shapes such as a point light source, a linear light source, a surface light source. This will surely dominate the market for the next generation lighting and display device. The new display utilizes not the glass substrate but the plastic one, resulting in the thin and flexible substrate that can be curved and flattened out as needed. In this paper, OLEDs device was produced by changing thickness of Teflon-AF of hole injection material layer. And as for the electrical properties, the four layer device of ITO/TPD/$Alq_3$/BCP/LiF/Al and the five layer device of ITO/Teflon AF/TPD/$Alq_3$/BCP/Lif/Al were studied experimentally.

Dynamic Voltage Restorer (DVR) for 6.6[kV]/60[Hz] Power Distribution System Using Two Quasi Z-Source AC-AC Converters (두 개의 Quasi Z-소스 AC-AC 컨버터에 의한 6.6[kV]/60[Hz] 배전계통의 동적 전압 보상기(DVR))

  • Oum, Jun-Hyun;Jung, Young-Gook;Lim, Young-Cheol;Choi, Joon-Ho
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.61 no.2
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    • pp.199-208
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    • 2012
  • This paper proposes a quasi Z-source DVR(Dynamic Voltage Restorer) system with a series connection of the output terminals, to compensate the voltage variations in the 6.6[kV]/60[Hz] power distribution system. The conventional DVR using one quasi Z-source AC-AC converter has the advantage which it can compensate the voltage variations without the need for the additional energy storage device such as a battery, but it is impossible to compensate for the 50[%] under voltage sags. To solve this problem, a DVR system using two quasi Z-source AC-AC converters with the series connection of the output terminals is proposed. By controlling the duty ratio D in the buck-boost mode, the proposed system can control the compensation voltage. For case verification of the proposed system, PSIM simulation is achieved. As a result, in case that the voltage sags-swells occur 10[%], 20[%], 60[%] in power distribution system, and, in case that the 50[%] under voltage sags-swells continuously occur, all case could compensate by the proposed system. Especially, the compensated voltage THD was examined under the condition of the 10[%]~50[%] voltage sags and the 20[${\Omega}$]~100[${\Omega}$] load changes. The compensated voltage THD was worse for the higher load resistances and more severe voltage sags. Finally, In case of the voltage swells compensation, the compensation factor has approached nearly 1 regardless of the load resistance changes, while the compensation factor of voltage sags was related to the load variations.

Schottky Barrier Tunnel Field-Effect Transistor using Spacer Technique

  • Kim, Hyun Woo;Kim, Jong Pil;Kim, Sang Wan;Sun, Min-Chul;Kim, Garam;Kim, Jang Hyun;Park, Euyhwan;Kim, Hyungjin;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.5
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    • pp.572-578
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    • 2014
  • In order to overcome small current drivability of a tunneling field-effect transistor (TFET), a TFET using Schottky barrier (SBTFET) is proposed. The proposed device has a metal source region unlike the conventional TFET. In addition, dopant segregation technology between the source and channel region is applied to reduce tunneling resistance. For TFET fabrication, spacer technique is adopted to enable self-aligned process because the SBTFET consists of source and drain with different types. Also the control device which has a doped source region is made to compare the electrical characteristics with those of the SBTFET. From the measured results, the SBTFET shows better on/off switching property than the control device. The observed drive current is larger than those of the previously reported TFET. Also, short-channel effects (SCEs) are investigated through the comparison of electrical characteristics between the long- and short-channel SBTFET.

Molecular epidemiologic analysis of pathogenic Escherichia coli isolated from poultry in Korea (국내 가금 유래 병원성 대장균의 분자역학적 분석)

  • Sung, Myung-Suk;Kim, Jin-Hyun;Kim, Ki-Seuk
    • Korean Journal of Veterinary Research
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    • v.50 no.3
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    • pp.239-246
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    • 2010
  • Among 203 avian pathogenic Escherichia coli (APEC) isolated from poultry with colibacillosis in korea, 14 isolates were selected from total 68 isolates transferred R plasmid and classified into 5 groups on the basis of antimicrobial minimal inhibitory concentration (MIC) pattern, farm source and O serotype. An association between clonal origin and R plasmid of them was investigated by R plasmid profile, restriction endonuclease analysis and pulsed-field gel electrophoresis (PFGE). The strains that showed the same or very similar antimicrobial MIC pattern, but different farm source and O serotype, revealed different PFGE pattern, which seemed to be different clonal origin. And the strains that showed the same MIC pattern and O serotype, revealed different PFGE pattern, seemed to be originated from different clone. Also the strains showing the same MIC pattern and farm source, but different O serotype, revealed to be different clonal origin. The strains that showed the same or similar MIC pattern, farm source, and O serotype, revealed identical or similar PFGE pattern, which seemed to belong to be one clone. Meanwhile, horizontal transfer of R plasmid seems to be common in APEC with regardless of O serotype and clone of the strains. These results indicate that rapid and accurate epidemiological survey of APEC can be possible by the combination of O serotyping, plasmid profiling and PFGE analysis following the classification of them into groups of antimicrobial drug resistance pattern.

Numerical Calculation of the Flow around a Ship by Means of Rankine Source Distribution (Rankine Source 분포를 이용한 선체주위 자유표면류의 수치계산)

  • Jae-Shin,Kim;Kwi-Joo,Lee;Soon-Won,Joa
    • Bulletin of the Society of Naval Architects of Korea
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    • v.27 no.4
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    • pp.32-42
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    • 1990
  • The method using Rankine Soure distribution over the hull surface and undisturbed free surface was applied to calculate the free surface flow around a ship. The ship hull as well as a local portion of the undisturbed free surface arc geometrically represented by quadrilateral panels and the source density is determined so as to satisfy the linearized free surface condition based on the double model flow. The pressure distribution, wave resistance, wave profile and hydrodynamic sinkage force and trim moment for the Wigley hull and the Series 60 hull with $C_B=0.60$ were calculated in the fixed condition. The calculated results were compared with the measured values. The dependance of the solution on the panel arrangement, particularly on the free suraface, was also studied through 11 numerical test cases for the Wigley hull.

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A Low Power Source Driver of Small Chip Area for QVGA TFT-LCD Applications

  • Hung, Nan-Xiong;Jiang, Wei-Shan;Wu, Bo-Cang;Tsao, Ming-Yuan;Liu, Han-Wen;Chang, Chen-Hao;Shiau, Miin-Shyue;Wu, Hong-Chong;Cheng, Ching-Hwa;Liu, Don-Gey
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.1005-1008
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    • 2007
  • In this study, an architecture for 262K-color TFT-LCD source driver. In this paper proposed the chip consumes smaller area and static current which is suitable for QVGA resolutions. In the conventional structures, all of them need large number of OPAMP buffers to drive the pixels, Therefore, highly resistive R-DACs are needed to generate gamma voltages to reduce the static current. In this study, our design only used two OPAMPs and low resistance RDACs without increasing the quiescent current. Thus, it was experted that chip would be more in consuming lower static power for longer battery lifetime. The source driver were implemented by the 3.3 V $0.35\;{\mu}m$ CMOS technology provided by TSMC. The area of the core OPAMP circuit was about $110\;{\mu}m\;{\times}\;150\;{\mu}m$ and that of the source driver was $880\;{\mu}m\;{\times}\;430\;{\mu}m$. As compared to the conventional structure, approximately 64.48 % in area was achieved.

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The study of plasma source ion implantation process for ultra shallow junctions (Ulra shallow Junctions을 위한 플라즈마 이온주입 공정 연구)

  • Lee, S.W.;Jeong, J.Y.;Park, C.S.;Hwang, I.W.;Kim, J.H.;Ji, J.Y.;Choi, J.Y.;Lee, Y.J.;Han, S.H.;Kim, K.M.;Lee, W.J.;Rha, S.K.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.111-111
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    • 2007
  • Further scaling the semiconductor devices down to low dozens of nanometer needs the extremely shallow depth in junction and the intentional counter-doping in the silicon gate. Conventional ion beam ion implantation has some disadvantages and limitations for the future applications. In order to solve them, therefore, plasma source ion implantation technique has been considered as a promising new method for the high throughputs at low energy and the fabrication of the ultra-shallow junctions. In this paper, we study about the effects of DC bias and base pressure as a process parameter. The diluted mixture gas (5% $PH_3/H_2$) was used as a precursor source and chamber is used for vacuum pressure conditions. After ion doping into the Si wafer(100), the samples were annealed via rapid thermal annealing, of which annealed temperature ranges above the $950^{\circ}C$. The junction depth, calculated at dose level of $1{\times}10^{18}/cm^3$, was measured by secondary ion mass spectroscopy(SIMS) and sheet resistance by contact and non-contact mode. Surface morphology of samples was analyzed by scanning electron microscopy. As a result, we could accomplish the process conditions better than in advance.

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Dynamic Simulation of Ground Source Heat Pump with a Vertical U-tube Ground Heat Exchanger (수직형 U자 관 지중 열교환기를 갖는 지열원 열펌프의 동적 시뮬레이션)

  • Lee, Myung-Taek;Kim, Young-Il;Kang, Byung-Ha
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.19 no.5
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    • pp.372-378
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    • 2007
  • GHX (Geothermal Heat Exchanger) design which determines the performance and initial cost is the most important factor in ground source heat pump system. Performance of GHX is strongly dependent on the thermal resistance of soil, grout and pipe. In general, GHX design is based on the static simulation program. In this study, dynamic simulation has been peformed to analyze the variation of system performance for various GHX parameters. Line-source theory has been applied to calculate the variation of ground temperature. The averaged weather data measured during a 10-year period $(1991\sim2000)$ in Seoul is used to calculate cooling and heating loads of a building with a floor area of $100m^2$. The simulation results indicate that thermal properties of borehole play significant effect on the overall performance. Change of grout thermal conductivity from 0.4 to $3.0W/(m^{\circ}C)$ increases COP of heating by 9.4% and cooling by 17%. Change of soil thermal conductivity from 1.5 to $4.0W/(m^{\circ}C)$ increases COP of heating by 13.3% and cooling by 4.4%. Change of GHX(length from 100 to 200 m increases COP of heating by 10.6% and cooling by 10.2%. To study long term performance, dynamic simulation has been conducted for a 20-year period and the result showed that soil temperature decreases by $1^{\circ}C$, heating COP decreases by 2.7% and cooling COP decreases by 1.4%.