• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.6
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• pp.252-259
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• 2005

Single crystal $CuGaSe_2$ layers were grown on thoroughly etched semi-insulating CaAs(100) substrate at $450^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuGaSe_2$ source at $610^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuGaSe_2$ thin films measured with Hall effect by Van der Pauw method are $4.87{\times}10^{17}cm^{-3}$ and $129cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.7998eV-(8.7489{\times}10^{-4}eV/K)T^2/(T+335K)$. The voltage, current density of maxiumun power, fill factor, and conversion, efficiency of $n-CdS/p-CuGaSe_2$, heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.41 V, $21.8mA/cm^2$, 0.75 and 11.17%, respectively.

• Korean Journal of Digital Imaging in Medicine
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• v.11 no.2
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• pp.115-119
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• 2009

I think this will be valuable reference for assuring consistency and homogeneity of clarity and managing dental radiation equipment by experimentation of dental radiation equipment permanent which based on KS C IEC 61223-3-4 standard and KS C IEC 61223-2-7. Put a dental radiation generator and experiment equipment as source and film(sensor) length within 30 em, place the step-wedge above the film(sensor). Tie up tube voltage 60 kVp, tube current 7 mA and then get an each image through CCD sensor and film by changing the exposure time as 0.12sec, 0.25sec, 0.4sec. Repeat the test 5times as a same method. Measure the concentration of each stage of film image, which gained by experiment, using photometer. And the image that gained by CCD sensor, analyze the pixel value's change by using image J, which is analyzing image program provided by NIH(National Institutes of Health). In case of film, while 0.12sec and 0.25sec show regular rising pattern of density gap as exposure time's increase, 0.4sec shows low rather than 0.12sec and 0.25sec. In case of CCD sensor density test, the result shows opposite pattern of film. This makes me think that pixels of CCD's sensor can have 0~255 value but it becomes saturation if the value is over 255. The way that getting clear reception during decreasing human's exposed radiation is one of maintaining an equipment as a best condition. So we should keeping a dental radiation equipment's condition steadily through cyclic permanent test after factor examination. Even digital equipment doesn't maintain a permanent, it can maintain a clarity by post processing of image so that hard to set it as standard of permanent test. Therefore it would be more increase the accuracy that compare a film as standard image. Thus I consider it will be an important measurement to care for dental radiation equipment and warrant homogeneity, consistency of dental image's clarity through comparing pattern which is the result from factor test against cyclic permanent test.

• Journal of the Korean Solar Energy Society
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• v.25 no.4
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• pp.1-11
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• 2005

The stoichiometric mixture of evaporating materials for the $CuInSe_2$ single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuInSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.783\;{\AA}$ and $11.621\;{\AA}$, respectively. To obtain the $CuInSe_2$ single crystal thin film, $CuInSe_2$ mixed crystal was deposited on throughly etched GaAs(100) by the HWE(Hot Wall Epitaxy) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$ respectively. The crystalline structure of $CuInSe_2$ single crystal thin film was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.1851\;eV-(8.99{\times}10^{-4}\;eV/K)T^2/(T+153\;K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $n-CdS/p-CuGaSe_2$ heterojunction solar cells under $80\;mW/cm^2$ illumination were found to be 0.51V, $29.3\;mA/cm^2$, 0.76 and 14.3 %, respectively.

• Journal of the Korean Solar Energy Society
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• v.38 no.1
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• pp.25-36
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• 2018

The stoichiometric mixture of evaporating materials for the $CaAl_2Se_4$: Co single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CaAl_2Se_4$, it was found orthorhomic structure whose lattice constant $a_0$, $b_0$ and $c_0$ were 6.4818, $11.1310{\AA}$ and $11.2443{\AA}$, respectively. To obtain the $CaAl_2Se_4$: Co single crystal thin film, $CaAl_2Se_4$: Co mixed crystal was deposited on throughly etched Si (100) by the HWE (Hot Wall Epitaxy) system. The source and substrate temperature were $600^{\circ}C$ and $440^{\circ}C$ respectively. The crystalline structure of $CaAl_2Se_4$: Co single crystal thin film was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CaAl_2Se_4$: Co obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.8239eV-(4.9823{\times}10^{-3}eV/K)T_2/(T+559K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $p-Si/p-CaAl_2Se_4$: Co heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.42 V, $25.3mA/cm^2$, 0.75 and 9.96%, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• Journal of electromagnetic engineering and science
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• v.1 no.1
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• pp.73-77
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• 2001

We studied the fabrication of GaAs-based pseudomorphic high electron mobility transistors(PHEMT`s) for the purpose of millimeter- wave applications. To fabricate the high performance GaAs-based PHEMT`s, we performed the simulation to analyze the designed epitaxial-structures. Each unit processes, such as 0.1 m$\mu$$\Gamma$-gate lithography, silicon nitride passivation and air-bridge process were developed to achieve high performance device characteristics. The DC characteristics of the PHEMT`s were measured at a 70 $\mu$m unit gate width of 2 gate fingers, and showed a good pinch-off property ($V_p$= -1.75 V) and a drain-source saturation current density ($I_{dss}$) of 450 mA/mm. Maximum extrinsic transconductance $(g_m)$ was 363.6 mS/mm at $V_{gs}$ = -0.7 V, $V_{ds}$ = 1.5 V, and $I_{ds}$ =0.5 $I_{dss}$. The RF measurements were performed in the frequency range of 1.0~50 GHz. For this measurement, the drain and gate voltage were 1.5 V and -0.7 V, respectively. At 50 GHz, 9.2 dB of maximum stable gain (MSG) and 3.2 dB of $S_{21}$ gain were obtained, respectively. A current gain cut-off frequency $(f_T)$ of 106 GHz and a maximum frequency of oscillation $(f_{max})$ of 160 GHz were achieved from the fabricated PHEMT\\`s of 0.1 m$\mu$ gate length.h.

• Journal of Advanced Marine Engineering and Technology
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• v.40 no.1
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• pp.28-33
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• 2016

Batteries are used for main power engine in the fields such as mobiles, electric vehicles and unmanned submarines, for starter and lamp driver in general automotive, for emergency electric source in ship. These days, lead-acid and the lithium ion batteries are increasingly used in the fields of the secondary battery, and the lead-acid battery has a low price and safety comparatively, The lithium ion battery has a high energy density, excellent output characteristics and long life, whereas it has the risk of explosion by reacting with moisture in the air. But Recently, due to the development of waterproof, fireproof, dustproof technology, lithium batteries are widely used, particularly, because their usages are getting wider enough to be used as a power source for hybrid ship and electric propulsion ship, it is necessary to manage more strictly. Hybrid ship has power supply units connected to the packets to produce more than 500kWh large power source, and therefore, A number of the communication modules and wires need to implement the wire inspection and monitor system(WIIMS) that allows monitoring server to transmit detecting voltage, current and temperature data, which is required for the management of the batteries. This paper implements a low price type wireless inspection and monitoring system(WILIMS) of the lithium ion battery for hybrid vessels using BLE wireless communication modules and power line modem( PLM), which have the advantages of low price, no electric lines compared to serial communication inspection systems(SCIS). There are state of charge(SOC), state of health(SOH) in inspection parts of batteries, and proposed system will be able to prevent safety accidents because it allows us to predict life time and make a preventive maintenance by checking them at regular intervals.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.6
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• pp.618-624
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• 2020

A portable power supply system for soldiers must be able to supply electric energy corresponding to the power consumption of combat support troops, and have a carrying load in a range that does not impair the combatant's ability to execute operations. In particular, as the total required power of combat equipment increases with the advances in the future soldier system, a portable, lightweight power supply system with high efficiency is essential. A fuel cell has a high energy-to-weight density compared to lithium batteries, which are used mainly as a military power source system. Therefore, it is capable of miniaturization and lightweight, making active R&D to a portable power supply system. In this paper, the characteristics of the fuel cell applied as a portable power supply system, and the R&D trends of domestic and foreign military portable fuel cell systems were investigated. The current status of domestic technology compared to the level of foreign development was analyzed. In addition, future technology development plans are presented based on the consideration factors when developing a portable fuel cell (power supply stability, portability, and cost reduction) so that it can be used when establishing a plan on the development of a portable fuel cell system for the future soldier system.

• Journal of the Korean Recycled Construction Resources Institute
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• v.6 no.4
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• pp.75-81
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• 2012

In case of crushing rock to produce materials for lean concrete subbase layer in concrete pavement, natural sand is used for the gradation adjustment of aggregates, and the percentage of natural sand used is 30%~40% of the weight ratio of aggregate mix. The supply of natural sand that is used in lean concrete as a fine aggregate is getting harder due to the current of exhaustion of source, and the cost for the purchase of natural sand is included in the cost of roadway construction. This study, therefore, was conducted in order to resolve the exhaustion of materials and economize in construction expenditure by the application of screenings, which is by-product of crushing rock in quarry, as an alternative to natural sand. As a result of a comparative analysis on the application of screenings and natural sand with typical types of rock that is produced in domestic, which was conducted in the first year, It is found out that the use of screenings as a fine aggregate showed better unconfined compression strength. Verification of actual application of screenings was conducted in the second year, after test construction and follow-up investigation. The compressive strength, compaction density, settlement of screenings applied case was higher than that of natural sand. Thus, it is expected that application of screenings to construction in field will contribute to the cost saving, material recycling and the protection of environment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.9
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• pp.535-540
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• 2017

The changes in the electrical characteristics of CMOS ICs due to coupling with a narrow-band electromagnetic wave were analyzed in this study. A magnetron (3 kW, 2.45 GHz) was used as the narrow-band electromagnetic source. The DUT was a CMOS logic IC and the gate output was in the ON state. The malfunction of the ICs was confirmed by monitoring the variation of the gate output voltage. It was observed that malfunction (self-reset) and destruction of the ICs occurred as the electric field increased. To confirm the variation of electrical characteristics of the ICs due to the narrow-band electromagnetic wave, the pin-to-pin resistances (Vcc-GND, Vcc-Input1, Input1-GND) and input capacitance of the ICs were measured. The pin-to-pin resistances and input capacitance of the ICs before exposure to the narrow-band electromagnetic waves were $8.57M{\Omega}$ (Vcc-GND), $14.14M{\Omega}$ (Vcc-Input1), $18.24M{\Omega}$ (Input1-GND), and 5 pF (input capacitance). The ICs exposed to narrow-band electromagnetic waves showed mostly similar values, but some error values were observed, such as $2.5{\Omega}$, $50M{\Omega}$, or 71 pF. This is attributed to the breakdown of the pn junction when latch-up in CMOS occurred. In order to confirm surface damage of the ICs, the epoxy molding compound was removed and then studied with an optical microscope. In general, there was severe deterioration in the PCB trace. It is considered that the current density of the trace increased due to the electromagnetic wave, resulting in the deterioration of the trace. The results of this study can be applied as basic data for the analysis of the effect of narrow-band high-power electromagnetic waves on ICs.