• 제목/요약/키워드: source current density

검색결과 309건 처리시간 0.04초

LCC 컨버터 기반의 제논 플래시 램프 구동장치를 위한 시머회로 설계 (Design of a Simmer Circuit for Xenon Flash Lamp Driver Based on a LCC Converter)

  • 송승호;조찬기;박수미;박현일;배정수;장성록;류홍제
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2017년도 전력전자학술대회
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    • pp.231-232
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    • 2017
  • This paper describes the design and implementation of a 2.5kW (500V, 5A) simmer circuit that maintains the ionization of xenon gas inside the lamp. The design is based on a LCC resonant converter in continuous conduction mode (CCM) with above resonant frequency to take advantage of high power density from using parasitic elements such as the leakage inductance in a power transformer. In addition, since the converter has current source output characteristics, it is suitable for maintaining ionization of the lamp having the negative resistance load characteristic. To verify this converter design, PSpice modeling was performed. Finally, the developed simmer circuit is verified by a resistive load of rated performance and the Ionization maintenance operation of the xenon flash lamp.

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Impact of Interface Charges on the Transient Characteristics of 4H-SiC DMOSFETs

  • Kang, Min-Seok;Bahng, Wook;Kim, Nam-Kyun;Ha, Jae-Geun;Koh, Jung-Hyuk;Koo, Sang-Mo
    • Journal of Electrical Engineering and Technology
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    • 제7권2호
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    • pp.236-239
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    • 2012
  • In this paper, we study the transient characteristics of 4H-SiC DMOSFETs with different interface charges to improve the turn-on rising time. A physics-based two-dimensional mixed device and circuit simulator was used to understand the relationship between the switching characteristics and the physical device structures. As the $SiO_2$/SiC interface charge increases, the current density is reduced and the switching time is increased, which is due primarily to the lowered channel mobility. The result of the switching performance is shown as a function of the gate-to-source capacitance and the channel resistance. The results show that the switching performance of the 4H-SiC DMOSFET is sensitive to the channel resistance that is affected by the interface charge variations, which suggests that it is essential to reduce the interface charge densities in order to improve the switching speed in 4H-SiC DMOSFETs.

나노카본을 이용한 조명용 신광원에 관한 연구 (Study of New Light Source with Nano Carbon Material)

  • 김광복;김용원;정한기;송윤호
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 2006년도 춘계학술대회 논문집
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    • pp.31-34
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    • 2006
  • The characteristic of carbon nano fiber (CNF) as electron emitters was described. Carbon nano fiber (CNF) of herringbone was prepared by thermal chemical vapor deposition(CVD), mixed with binders and conductive materials, and then were formed by screen-printing process. In order to increase effectively field emissions, the surface treatment of rubbing & peel-off was applied to the printed CNF emitters on cathode electrode. The measurements of field emission properties were carried out by using a diode structure inline vacuum chamber. CNF of herringbone type showed good emission properties that a turn on field was as low as $2.5V/{\mu}m$ and current density was as large as $0.15mA/cm^2$ of $4.5V/{\mu}m$ with electric field. After the vacuum packaged panel of 5-inch in diagonal, the measured white brightness was as high as $7000cd/m^2$ at 1900V of anode and 700V of gate voltage.

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$Zn(HPB)_2$와 Zn(HPB)q를 이용한 White OLED의 색순도 향상에 관한 연구 (Improvements of Color Purity in White OLED using $Zn(HPB)_2$ and Zn(HPB)q)

  • 장수현;백선진;최규채;이학대;권영수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 제38회 하계학술대회
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    • pp.2018-2019
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    • 2007
  • Organic light emitting diodes (OLEDs) show a lot of advantages for display purposes. Because OLEDs provide white light emission with a high efficiency and stability, it is desirable to apply OLEDs as an illumination light source and back light in LCD displays. We synthesized new emissive materials, namely $Zn(HPB)_2$ and Zn(HPB)q, which have a low molecular compound and thermal stability. We studied white OLEDs using $Zn(HPB)_2$ and Zn(HPB)q. The fundamental structures of the white OLEDs were ITO / NPB (40 nm) / $Zn(HPB)_2$ (40 nm) / Zn(HPB)q (20 nm) / LiAl (120nm). As a result, we obtained a maximum luminance of $15325cd/m^2$ at a current density of $997\;mA/cm^2$. The CIE (Commission International de l'Eclairage) coordinates are (0.28, 0.35) at an applied voltage of 9.75 V.

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Growth and Photoconductive Characteristics of $ZnGa_2Se_4$ Epilayers by the Hot Wall Epitaxy

  • Park, Chang-Sun;Hong, Kwang-Joon
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.263-266
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    • 2004
  • The stochiometric mix of evaporating materials for the $ZnGa_2Se_4$ single crystal thin films were prepared from horizental furnace. The polycrystal structure obtaind from the power x-ray diffraction was defect chalcopyrite. The lattice costants $a_0\;and\;c_0\;were\;a_0=5.51\;A,\;c_0=10.98\;A$. To obtains the single crystal thin films, $ZnGa_2Se_4$ mixed crystal were deposited on throughly etched Si(100) by the Hot Wall Epitaxy (HWE) system. The temperates of the source and the substrate were $590^{\circ}C\;and\;450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to dark current(pc/dc), maximum allowable rower dissipation(MAPD), spectral response and response time.

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Growth and Photoconductive Characteristics of $AgInS_2$ Single Crystal Thin Films by the Hot Wall Epitaxy

  • Hong, Kwang-Joon
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.381-384
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    • 2004
  • The stochiometric nix of evaporating materials for the $AgInS_2$ single crystal thin films were prepared from horizontal furnace. The polycrystal structure obtaind from the power x-ray diffraction was chalcopyrite. The lattice costants $a_0\;and\;c_0$ were $a_0=5.86(5.82)\;A,\;c_0=11.355(11.17)\;A$. To obtains the single crystal thin films, $AgInS_2$ mixed crystal were deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The temperates of the source and the substrate were $590^{\circ}C\;and\;450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time.

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$Zn(HPB)_2$와 Zn(HPB)q를 이용한 White OLEDs의 전기적 특성 (Electrical Properties of White OLEDs used such as $Zn(HPB)_2$ and Zn(HPB)q)

  • 장윤기;김병상;김두석;이범종;권영수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.416-417
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    • 2006
  • Organic light emitting diodes (OLEDs) show a lot of advantages for display purposes. Because OLEDs provide white light emission with a high efficiency and stability, it is desirable to apply OLEDs as an illumination light source and back light in LCD displays. We synthesized new emissive materials, namely [2-(2-hydroxyphenyl)benzoxazole] ($Zn(HPB)_2$) and [(2-(2-hydroxyphenyl)benzoxazole)(8-hydoxyquinoline)] (Zn(HPB)q), which have a low molecular compound and thermal stability. We studied white OLEDs using $Zn(HPB)_2$ and Zn(HPB)q. The fundamental structures of the white OLEDs were ITO/PEDOT:PSS (23 nm)/NPB (40 nm)/$Zn(HPB)_2$ (40 nm)/Zn(HPB)q (20 nm)/$Alq_3$ (10 nm)/LiAl (120 nm). As a result, we obtained a maximum luminance of $15325\;cd/m^2$ at a current density of $997\;mA/cm^2$. The CIE(Commission International de l'Eclairage) coordinates are (0.28, 0.35) at an applied voltage of 9.75 V.

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Recyled Concrete Aggregate (RCA) in Structural Concrete of Developing Nation: A Cace Study of Ethiopian Construction Industry

  • Damtie, Mitiku;Woldesenbet, Asregedew
    • 국제학술발표논문집
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    • The 6th International Conference on Construction Engineering and Project Management
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    • pp.405-410
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    • 2015
  • Today, the booming construction in Ethiopia is leading to an increased demolition of concrete structures whereby these demolished structures are disposed at landfills. The current practice is creating a huge amount of waste which is environmentally unfriendly and is becoming the main source of pollution in communities. This paper discusses the potential use of demolished concrete from site tested specimens as a recycled aggregate material for new structural concrete. The mechanical, physical and chemical properties of RCA are studied to understand the suitability in the production of recycled concrete. Tests including gradation, unit weight, soundness, density, and abrasion will be conducted to assess RCA properties. Since the percentage of RCA govern the strength of concrete, a C25 concrete is mixed by the ratio of 25%, 50% & 100% RCA with and without water reducing admixture and a control mixture composed of natural aggregate. The output of this study will highly impact the growing construction industry and communities in Ethiopia thereby reducing waste, saving cost, conserving natural aggregates, building capacity and setting quality standards.

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Fabrication of carbon nanotube fibers with nanoscale tips and their field emission properties

  • Shin, Dong-Hoon;Song, Ye-Nan;Sun, Yu-Ning;Shin, Ji-Hong;Lee, Cheol-Jin
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.468-468
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    • 2011
  • Carbon nanotubes (CNTs) have been considered as one of the promising candidate for next-generation field emitters because of their unique properties, such as high field enhancement factor, good mechanical strength, and excellent chemical stability. So far, a lot of researchers have been interested in field emission properties of CNT itself. However, it is necessary to study proper field emitter shapes, as well as the fundamental properties of CNTs, to apply CNTs to real devices. For example, specific applications, such as x-ray sources, e-beam sources, and microwave amplifiers, need to get a focused electron beam from the field emitters. If we use planar-typed CNT emitters, it will need several focal lenses to reduce a size of electron beam. On the other hand, the point-typed CNT emitters can be an effective way to get a focused electron beam using a simple technique. Here, we introduce a fabrication of CNT fibers with nanoscale point tips which can be used as a point-typed emitter. The emitter made by the CNT fibers showed very low turn-on electric field, high current density, and large enhancement factor. In addition, it showed stable emission current during long operation period. The high performance of CNT point emitter indicated the potential e-beam source candidate for the applications requiring small electron beam size.

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원추형 금속 기판의 팁 각도에 따른 탄소 나노튜브 이미터의 전계방출 특성 (Field-emission characteristics of carbon nanotube emitters in terms of tip angles of conical-type metal substrates)

  • 김종필;노영록;장한빛;박진석
    • 반도체디스플레이기술학회지
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    • 제10권2호
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    • pp.115-119
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    • 2011
  • A tip-type carbon nanotube(CNT)-based field emitter was studied to consider it as electron source for micro-focused x-ray tube. The CNT was grown directly on a metal (tungsten) substrate by using an inductively coupled plasma-chemical vapor deposition (ICP-CVD) method. Prior to CNT growth, the metal substrate was etched to have various tip angles from $10^{\circ}$ to $180^{\circ}C$ (flat-type). The morphologies and microstructures of all the grown CNTs were analyzed via field-emission SEM. Furthermore, the effects of substrate tip-angles on the emission properties of CNT-based field emitters were characterized to estimate the maximum current density, the turn-on voltage, and the spatial distribution of electron beams. Prolonged long-term stability testing of the CNT emitters was also performed. All the experiment results obtained from this study indicated why a tip-type CNT emitter, compared with a flat-type CNT emitter, would be more desirable for a micro-focused x-ray system, in terms of the emission current level, the focused beam area, and the emission stability.