• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.291-291
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• 2010

Organic solar cells have attracted much interest due to the potential advantage of the lightness, simple solution processing and flexibility. Until recently, the focus of organic solar cells research has been on optimization of material processing to improve the power conversion efficiency. However, area scaling is an important position for alternative to the market dominating solar cells. Spray deposition technologies have advantage of less material wastage and possibility of large scale photoactive area coating when compared with spin coating process. We investigated the performance of organic solar cells as a function of active area using two types of deposition process. The commonly used process is spin coating which can be fabricated organic materials deposition for devices. Spray deposition process compare with spin coating for large-area organic solar cells. The spray deposition organic layer shows excellent performance up to the active area of $4\;cm^2$ with the PCE of ~3.0 % under AM.1.5 simulated illumination with an intensity of $100mW/cm^2$. This indicates that the spray deposition process can be used as a mass production process for evaluating large-area organic solar cells.

• Korean Chemical Engineering Research
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• v.43 no.4
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• pp.495-502
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• 2005

Copper was plated on the tungsten substrate by use of a direct copper electroless plating. The optimum deposition conditions were found to be with a concentration of $CuSO_4$ 7.615 g/L, EDTA of 10.258 g/L, and glyoxylic acid of 7 g/L, respectively. The solution temperature was maintained at $60^{\circ}C$. The pH was varied from 11.0 to 12.8. After the deposition, the properties of the copper film were investigated with X-ray diffractometer (XRD), Field emission secondary electron microscope (FESEM), Atomic force microscope (AFM), X-ray photoelectron spectroscope (XPS), and Rutherford backscattering spectroscope (RBS). The best deposition condition was founded to be the solution pH of 11.8. In the case of 10 min deposition at the pH of 11.8, the grain shape was spherical, Cu phase was pure without impurity peak ($Cu_2O$ peak), and the surface root mean square roughness was about 11 nm. The thickness of the film turned out to be 140 nm after deposition for 12 min and the deposition rate was found to be about 12 nm/min. Increase in pH induced a formation of $Cu_2O$ phase with a long rectangular grain shape. The pH control seems to play an important role for the orientation of Cu in electroless deposition. The deposited copper concentration was 99 atomic percent according to RBS. The resulting Cu/W film yielded a good adhesive strength, because Cu/W alloy forms during electroless deposition.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.262-262
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• 2016

최근 고해상도 디스플레이가 주목받으면서 기존 비정질 실리콘(a-Si)을 대체할 수 있는 재료에 관한 연구가 활발히 진행되고 있다. a-Si의 경우 간단한 공정 과정, 적은 생산비용, 대면적화가 가능하다는 장점이 있지만 전자 이동도가 매우 낮은 단점이 있다. 반면, 산화물 반도체는 비정질 상태에서 전자 이동도가 높으며 큰 밴드갭을 가지고 있어 투명한 특성을 나타낼 뿐만 아니라, 저온공정이 가능하여 기판의 제한이 없는 장점을 가지고 있다. 대표적으로 가장 널리 연구되고 있는 산화물 반도체는 a-IGZO(amorphous indium-gallium-zinc oxide)이다. 그러나 InZnO(IZO) 기반의 산화물 반도체에서 carrier suppressor 역할을 하는 Ga(gallium)은 수요에 대한 공급이 원활하지 못하여 비싸다는 단점이 있다. 그러므로 경제적이면서 a-IGZO와 유사한 전기적 특성을 나타낼 수 있는 suppressor 물질이 필요하다. 따라서 본 연구에서는 IZO 기반의 산화물 반도체에서 Ga을 Hf(hafnium), Zr(zirconium), Si(silicon)으로 대체하여 용액증착(solution-deposition) 공정으로 각각의 채널층을 형성한 back-gate type의 박막 트랜지스터(thin-film transistor, TFT) 소자를 제작하였다. 용액증착 공정은 물질의 비율을 자유롭게 조절할 수 있고, 대기압의 조건에서도 공정이 가능하기 때문에 짧은 공정시간과 저비용의 장점이 있다. 제작된 소자는 p-type Si 위에 게이트 절연막으로 100 nm의 열산화막이 성장된 기판을 사용하였다. 표준 RCA 클리닝 후에 각 solution 물질을 spin coating 방식으로 증착하였다. 이후, photolithography, develop, wet etching의 과정을 거쳐 채널층 패턴을 형성하였다. 또한, 산화물 반도체의 전기적 특성을 향상시키기 위해서 후속 열처리 과정(post deposition annealing, PDA)은 필수적이다. CTA 방식은 높은 열처리 온도와 긴 열처리 시간의 단점이 있다. 따라서, 본 연구에서는 $100^{\circ}C$ 이하의 낮은 온도와 짧은 열처리 시간의 장점을 가지는 MWI (microwave irradiation)를 후속 열처리로 진행하였다. 그 결과, 각 물질로 구현된 소자들은 기존 a-IGZO와 비교하여 적은 양의 carrier suppressor로도 우수한 전기적 특성 및 안정성을 얻을 수 있었다. 따라서, Si, Hf, Zr 기반의 산화물 반도체는 기존의 Ga을 대체하여 저비용으로 디스플레이를 구현할 수 있는 IZO 기반 재료로 기대된다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.194.1-194.1
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• 2016

The present study investigated the effect of zincate treatment time on the dissolution behavior and the deposition of copper by immersion process and electroplating process on AZ31 Mg alloy substrate in a copper pyrophosphate bath. Without zincate pretreatment, the AZ31 Mg substrate quickly dissolved in the copper pyrophosphate solution although an external cathodic current was applied. The copper layers deposited on non-zincate treated AZ31 Mg alloy substrate by both immersion and electroplating processes showed very porous structure and very poor adhesion. With increasing zincate treatment time up to 2 min, the dissolution of AZ31 substrate in pyrophosphate solution rapidly decreased and the deposited copper layer was less porous and exhibited stronger adhesion. The immersion of AZ31 Mg sample in zincate solution for 5 min was found as a critical time for producing a non-porous and adherent electrodeposited copper layer on AZ31 Mg alloy. The optimum zincating time can be determined by observing the open circuit potential (OCP) of AZ31 Mg alloy samples in a copper pyrophosphate electroplating bath. The OCP reached a stable value of about -0.10 V (vs. SCE) after 5 min of immersion in the copper pyrophosphate electroplating solution.

• Korean Journal of Materials Research
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• v.9 no.4
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• pp.414-418
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• 1999

Typical metal oxide thin films having optical and electrical properties are widely used as inorganic functional materials. Liquid phase deposition(LPD) method, a new low temperature process, has been developed for the several advantages of no vacuum system, low cost, high throughput, and low processing temperature(<$50^{\circ}C$). Silica powder was added to 40wt% hydrofluoro-silicic acid($H_2$SiF\ulcorner) to obtain an immersing solution of silica-saturated hydrofluorosilicic acid solution. Boric acid solution was continuously added in the range from 0 to 0.05M to prepare supersaturated hydrofluorosilicic acid solution. LPD $SiL_2$film was formed with the variation of added amount of $H_2$O. The SiO$_2$thin film could be prepared from hydrofluorosilicic acid by LPD method. The thickness of LPD $_SiO2$film was influenced by the boric acid concentration and added amount of $H_2$O. Silicon in thin film existed as SiF\ulcorner by Raman spectrum.

• Journal of the Korean institute of surface engineering
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• v.29 no.2
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• pp.140-145
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• 1996

Silver deposits formed on copper substrates by replacement reactions show poor adhesion, and a silver film plated on such a deposit does not adhere. Silver ion makes a highly stable complex with cyanide ion, so that in a silver cyanide solution, the activity of silver ion is very small. This is one of the reasons for the universal use of cyanide baths in the industrial silver plating. However, the consideration of the difference between the values of the stability constants for bath the silver-iodide complex and the copper-iodide complex suggest that the rate of replacement deposition of silver on the copper substrate in si]ver-potassium iodide solution, could be comparatively low. To confirm this, the rate of replacement deposition of silver in both a silver-potassium iodide solution ($AgNO_3$0.10 mol/L, KI 2.00 mol/L ) and a strike silver plating bath (AgCN 0.028 mol/L, KCN 1.15 mol/L ) was estimated from the current density corresponding to the point of intersection of the anodic and the cathodic polarization curves. These estimated values were almost the same, and it is suggested that the silver-potassium iodide solution is not only a cyanide free silver plating bath capable of employing a copper substrate but a silver plating bath which requires no strike plating.

• International Journal of Precision Engineering and Manufacturing
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• v.7 no.1
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• pp.42-46
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• 2006

This paper presents a method for deposition an individual carbon nanotube (CNT). The alignment of a single CNT is very useful to perform studies related to applications in FET (Field Emitted Transistor), SET (Single Electron Transistor) and to make chemical sensor as well as bio sensors. In this study, we developed the deposition method of a CNT individualized in a solution. Using the electrokinetic method, we found the optimum conditions to assemble the nanotube and discussed about plausible explanation for the assembling mechanism. These results will be available to use for making the CNT sensor device.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.120-123
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• 2000

This paper reports a newly developed sol-gel process to synthesize dense YBCO thick films with BaTiO$_3$additives using electrophoretic deposition and metal alkoxide sol/particle suspension, which we successfully produce dense $YBCO+BaTiO_3$ ceramics at a rather low temperature, compared with the sintering temperature used in conventional methods. The thick films of HTS were prepared by electrophoretic deposition, using pre-sintered powder with barium titanate addition in the form of $BaTi(OR)_6$ solution in suspension for electrophoresis. The conditions for applied voltage and deposition times for electrophoretic deposition of HTS thick films were studied in detail.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.531-534
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• 2002

NiO buffer layers for YBCO coated conductors were deposited on hi-axially textured Ni substrates by MOCVD(metal organic chemical vapor deposition) method, using single solution source. To establish the processing condition, oxygen partial pressure and deposition temperature were changed. The surface orientation and degree of texture were estimated by X-ray diffraction, X-ray pole figure and atomic force microscopy. The FWHMs of in-plane and out-of-plane of the NiO films were about 10$^{\circ}$. The surface roughness was a function of deposition temperature. The AFM surface roughness of NiO films is in the range of 3∼10 nm, when NiO films was grown at 450∼530$^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.264-266
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• 2005

Manufacture of OLED device used thermal evaporation method. However thermal evaporation method has many defect as thermal damage of substrate, difficult of dopant rate control and low utilization of organic materials. so we suggest PLD(Pulsed Laser Deposition) method that solution of these problems. PLD method has many advantage as without thermal damage, easy indicate of deposition rate per one pulse and good utilization of organic materials. In this paper we apply the PLD method for manufacture of device so we present high efficiency device manufacture using PLD method that has good deposition uniformity, surface rough and deposition rate.