• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.159-159
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• 2011

Among the semiconductor ternary compounds in the I-III-$VI_2$ series, $CulnS_2$ ($CulnSe_2$) are one of the promising materials for photovoltaic applications because of the suitability of their electrical and optical properties. The $CuInS_2$ thin film is one of I-III-$VI_2$ type semiconductors, which crystallizes in the chalcopyrite structure. Its direct band gap of 1.5 eV, high absorption coefficient and environmental viewpoint that $CuInS_2$ does not contain any toxic constituents make it suitable for terrestrial photovoltaic applications. A variety of techniques have been applied to deposit $CuInS_2$ thin films, such as single/double source evaporation, coevaporation, rf sputtering, chemical vapor deposition and chemical spray pyrolysis. This is the first report that $CuInS_2$ thin films have been prepared by Aerosol Jet Deposition (AJD) technique which is a novel and attractive method because thin films with high deposition rate can be grown at very low cost. In this study, $CuInS_2$ thin films have been prepared by Aerosol Jet Deposition (AJD) method which employs a nozzle expansion. The mixed fluid is expanded through the nozzle into the chamber evacuated in a lower pressure to deposit $CuInS_2$ films on Mo coated glass substrate. In this AJD system, the characteristics of $CuInS_2$ films are dependent on various deposition parameters, such as compositional ratio of precursor solution, flow rate of carrier gas, stagnation pressure, substrate temperature, nozzle shape, nozzle size and chamber pressure, etc. In this report, $CuInS_2$ thin films are deposited using the deposition parameters such as the compositional ratio of the precursor solution and the substrate temperature. The deposited $CuInS_2$ thin films will be analyzed in terms of deposition rate, crystal structure, and optical properties.

• 한국초전도학회:학술대회논문집
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• v.11
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• pp.28-28
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• 2001

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.288-291
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• 2001

It is very important to select suspension solution for forming electrophoretic deposited YBCO thick mm, because it is heavily affected to its superconducting properties. In this paper, high-temperature superconductor films of $YBa_{2}Cu_{3}O_{7-x}$ were fabricated by electrophoretic deposition (EPD) from alcohol-based suspension such as iso-propanol, iso-butanol, and their mixture. For the formation of YBCO dense and adherent coating on a silver wire by EPD, 1 % PEG(1000) 2 ml, as a additive for making their surface crack-free, was used for electrophoresis. As a results, the cracks were considerably decreased and the superconducting critical current density $(J_e)$ without/with PEG was $1200A/cm^2$ and $2020A/cm^2$, which films deposited in mix iso-propanol and iso-butanol suspension.

• Journal of Surface Science and Engineering
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• v.36 no.3
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• pp.263-271
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• 2003

Optimal conditions of electroless nickel plating in acid baths has been studied for industrial applications of a developed EN solution. The phosphorus content in the deposition ranges from 8 to $12\;wt.\%$. The investigated EN plating parameters are ion concentrations of nickel and hypophosphite, concentration of reducing and complexing agent, temperature, and pH. The average plating rate of Ni-P deposition was ca. $14{\mu}m/h$. The EN solution used shows a deposition rate of $10{\mu}m/h$ up to seven metal turnovers.

• Journal of Surface Science and Engineering
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• v.41 no.1
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• pp.28-32
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• 2008

In this paper CdS thin films, which were widely used window layer of the CdS/CdTe and the CdS/$CuInSe_2$ heterojunction solar cell, were grown by chemical bath deposition, which is a very attractive method for low-cost and large-area solar cells, and the structural, optical and electrical properties of the films was studied. As the thiourea/$CdAc_2$ mole ratio was increased, the deposition rate of CdS films prepared by CBD was increased due to increasing reaction velocity in solution and the optical bandgap was increased at higher thiourea/$CdAc_2$ mole ratio due to larger grain size and continuous microstructure. The minimum resistivity of the films was at thiourea/$CdAc_2$ mole ratio of 3.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.288-291
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• 2001

It is very important to select suspension solution for forming electrophoretic deposited YBCO thick film, because it is heavily affected to its superconducting properties. In this paper, high-temperature superconductor films of YBa$_2$Cu$_3$$O_{7-x}$ were fabricated by electrophoretic deposition (EPD) from alcohol-based suspension such as iso-propanol, iso-butanol, and their mixture. For the formation of YBCO dense and adherent coating on a silver wire by EPD, 1% PEG(1000) 2 $m\ell$, as a additive for making their surface crack-free, was used for electrophoresis. As a results, the cracks were considerably decreased and the superconducting critical current density (J$_{c}$) without/with PEG was 1200 A/$\textrm{cm}^2$ and 2020 A/$\textrm{cm}^2$, which films deposited in mix ism-propanol and iso-butanol suspension.ion.

• Journal of Surface Science and Engineering
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• v.22 no.4
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• pp.161-167
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• 1989

Effects of bath composition on electroless deposition of Ni-W-B from sulphate solution were invesrigated in terms of deposition kinetics, electro resistivity and composition of deposit film. The microstruigated and crystataine structure of the films were also studied using a scanning electron microscope and X-ray diffractometer. The deposition rate increased linearly with increasing the concentration of nickel sulphate in bath solution, wheras the rate decreasing with sodium citrate. The rate was also affected by sodium tungstate, which was maaximum at the concentration of 0.06 M/1 in sodium tungstate, The content of W in the deposit increased with increased with increasing the sodium citrate had on opposite effect on the composition of W and B in the deposit. The crystal change film from armorphous to cryatallicne nature by heat treatments was proved by the reduction of specific resistance and X-ray diffration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.621-624
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• 1999

Metalization technology of the fine patterns by electroless plating is required in place of electrodeposition as high-density printed boards(PCR) become indispensable with the miniaturization of electronic components. Electroless nickel plating is a suitable diffusion barrier between conductor meta1s, such as Al and Cu and solder is essetional in electronic packaging in order to sustain a long period of service. Moreover, Electroless nickel has particular characteristics including non-magnetic property, amorphous structure. wear resistance, corrosion protection and thermal stability In this study fundamental aspects of electroless nickel deposition were studied with effort of complexeing agents of different kinds. Then the property of electroless deposit are controlled by the composition of the deposition solution the deposition condition such as temperature and pH value and so on. the characteristics of the deposits has been carried out.

• Journal of Surface Science and Engineering
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• v.22 no.3
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• pp.128-134
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• 1989

Mechanism of cobalt deposition was investigated using the potentiodynamic potentiostatic methods in solution of pH 4 and pH6.4 In all experimental conditions, polarization curves showed two regions with different Tafel slopes and the reaction order of cobalt ion was varied with the pH. It is belived that the deposition mechanism depends not only on the portential but also on the ph.

• YAKHAK HOEJI
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• v.27 no.1
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• pp.1-10
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• 1983

Voltammetric deposition and differential pulse anodic stripping (DPASV) of Ge(IV)at a gold electrode was investigated. Germanium (IV) exhibits two stripping peaks by DPASV in sodium borate solution, the first peak at about -1.1v. vs SCE and the second one, in the range of -0.6 to -0.2v. vs SCE. Factors affecting the sensitivity and precision included the nature of working electrode, supporting electrolytes, deposition potential, deposition time, pH, pulse height, voltage scan rate. The relative standard deviation of the measurements of the peak currents, for 100ng/ml Ge(IV), was less than ${\pm}3%$. The detection limit of Ge(IV) was 0.01ng/ml. Percent recovery in the extraction procedure of Ge(IV) from matrices by benzene in c-HCl, followed by back extraction with saturated borax solution, ranged from 96 to 104%.