• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1631-1633
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• 2008

We demonstrate 4-in QVGA active-matrix electrophoretic display based on ink-jet printed organic transistors on glass substrates. Our TFT array had a bottom-gate, bottom-contact device architecture. The organic semiconductor and gate dielectric were solution processed. The field-effect mobility of the printed devices, calculated in the saturation region, was $0.1{\sim}0.3cm^2/Vs$ at Vg=-20 V.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.21 no.1
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• pp.115-147
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• 2023

The Fukushima accident in 2011 revealed some major flaws in traditional nuclear fuel materials under accidental conditions. Thus, the focus of research has shifted toward "accident tolerant fuel" (ATF). The aim of this approach is to develop fuel material solutions that lead to improved reactor safety. The application of protective coatings on the surface of nuclear fuel cladding has been proposed as a near-term solution within the ATF framework. Many coating materials are being developed and evaluated. In this article, an overview of different zirconium-based alloys currently in use in the nuclear industry is provided, and their performances in normal and accidental conditions are discussed. Coating materials proposed by different institutions and organizations, their performances under different conditions simulating nuclear reactor environments are reviewed. The strengths and weaknesses of these coatings are highlighted, and the challenges addressed by different studies are summarized, providing a basis for future research. Finally, technologies and methods used to synthesize thin-film coatings are outlined.

• Journal of computational fluids engineering
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• v.14 no.1
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• pp.78-85
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• 2009

A combined theoretical and numerical study is conducted to design a slit nozzle for large-area liquid coating. The objectives are to guarantee the uniformity in the injected flow and to provide the capability of explicit control of flow rate. The woking fluid is a dilute aqueous solution containing single-walled carbon nanotubes and its low viscosity and the presence of dispersed materials pose technical hurdles. A theoretical analysis leads to a guideline for the geometric design of a slit nozzle. The CFD-based numerical experiment is employed as a verification tool. A new flow passage unit, connected to the nozzle chamber, is proposed to permit the control of flow rate by using the commodity pressurizer. The numerical results confirm the feasibility of this idea. The optimal geometry of internal structure of the nozzle has been searched for numerically and the related issues are discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.2
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• pp.87-90
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• 2008

Co-Pt alloy thin films were galvanostatically electrodeposited on Ru (30 nm)/Ta (5 nm)/Si (100) substrates from a amino-citrate based electrolyte. We used Ru(0002)-oriented buffer layers to control the crystallinity and orientation of the Co-Pt alloy thin films. The effect of solution temperature on the microstructure and magnetic properties of the Co-Pt alloy thin film was investigated. The samples were characterized by EDS, FESEM, XRD diffractometer using Cu $K{\alpha}$ radiation. The magnetic properties of these films were analyzed by a VSM and torque magnetometer. The Co-Pt alloy thin films were exhibited very high out-of-plane coercivity and squareness of the multilayer were 6527 Oe and 0.93, respectively, without heat treatment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.484-490
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• 2017

We investigated the rewritable operation of a non-volatile memory device composed of Al (top)/$TiO_2$/indium-zinc-oxide (IZO)/Al (bottom). The oxygen-deficient IZO layer of the device was spin-coated with 0.1 M indium nitrate hydrate and 0.1 M zinc acetate dehydrate as precursor solutions, and the $TiO_2$ layer was fabricated by atomic layer deposition. The oxygen vacancies IZO layer of an active component annealed at $400^{\circ}C$ using thermal annealing and it was proven to be in oxygen vacancies and oxygen binding environments with OH species and heavy metal ions investigated by X-ray photoelectron spectroscopy. The device, which operates at low voltages (less than 3.5 V), exhibits non-volatile memory behavior consistent with resistive-switching properties and an ON/OFF ratio of approximately $3.6{\times}10^3$ at 2.5 V.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.7 no.4
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• pp.577-588
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• 1995

A numerical study is made on the melting process of an unconstrained ice inside an isothermal ice-ball capsule. The unmelted ice core is continuously ascending on account of buoyancy forces. Such a buoyancy-assisted melting is commonly characterized by the existence of a thin liquid film above the ice core. The present study is motivated to present a full-equation-based analysis of the influences of the initial subcooling and the natural convection on the fluid flow associated with the buoyancy-assisted melting. In the light of the solution strategy, the present study is substantially distinguished from the existing works in that the complete set of governing equations in both the melted and unmelted regions are resolved in one domain. Numerical results are obtained by varying the wall temperature and initial temperature. The present results reported the transition of the flow pattern in a spherical capsule, as the wall temperature was increased over the density inversion point. In addition, time wise variation of the shapes for the liquid film and the lower ice surface, the time rate of change in the melt volume fraction and the melting distance at symmetric line is analyzed and is presented.

• Journal of Power Electronics
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• v.2 no.3
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• pp.171-180
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• 2002

New 42-volt automotive electrical systems can provide significant improvements in vehicle performance and fuel economy. It is crucial to provide protection against load dump and other overvoltage transients in 42-volt systems. While advanced active control techniques are generally considered capable of providing such protection, the use of passive transient voltage suppression (TVS) devices as a secondary or supplementary protection means can significantly improve design flexibility and reduce system costs. This paper examines the needs and options for passive TVS devices for 42-volt applications. The limitations of the commonly available automotive TVS devices, such as Zener diodes and metal oxide varistors (MOV), are analyzed and reviewed. A new TVS device concept, based on power MOSFET and thin-film polycrystalline silicon back-to-back diode technology, is proposed to provide a better control on the clamp voltage and meet the new 42-volt specification. Both experimental and modeling results are presented. Issues related to the temperature dependence and energy absorbing capability of the new TVS device are discussed in detail. It is concluded that the proposed TVS device provides a cost-effective solution for load dump protection in 42-volt systems.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.1-5
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• 2021

Field-effect transistors based on solution-processed metal oxide semiconductors has attracted huge attention due to their intrinsic characteristics of optical and electrical characteristics with benefits of simple and low-cost process. Especially, spray-pyrolysis has shown excellent device performance which compatible to vacuum-processed Field-effect transistors. However, the high annealing temperature for crystallization of MOS and narrow range of precursors has impeded the progress of the technology. Here, we demonstrated the nc-ZnO/ZnO films performed by spray-pyrolysis with incorporating ZnO nanoparticles into typical ZnO precursor. The films exhibit preserving morphological properties of poly-crystalline ZnO and enhanced electrical characteristics with potential for low-temperature processability. The influence of nanoparticles within the film was also researched for realizing ZnO films providing good quality of performance.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.208-208
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• 2013

Graphene has emerged as a fascinating material for next-generation nanoelectronics due to its outstanding electronic properties. In particular, graphene-based field effect transistors (GFETs) have been a promising research subject due to their superior response times, which are due to extremely high electron mobility at room temperature. The biggest challenges in GFET applications are control of carrier concentration and opening the bandgap of graphene. To overcome these problems, three approaches to doping graphene have been developed. Here we demonstrate the decoration of Ni nanoparticles (NPs) on graphene films by simple annealing for p-type doping of graphene. Ni NPs/graphene films were fabricated by coating a $NiCl2{\cdot}6H2O$ solution onto graphene followedby annealing. Scanning electron microscopy and atomic force microscopy revealed that high-density, uniformly sized Ni NPs were formed on the graphene films and the density of the Ni NPs increased gradually with increasing $NiCl2{\cdot}6H2O$ concentration. The formation of Ni NPs on graphene films was explained by heat-driven dechlorination and subsequent particlization, as investigated by X-ray photoelectron spectroscopy. The doping effect of Ni NPs onto graphene films was verified by Raman spectroscopy and electrical transport measurements.

• Journal of Information Display
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• v.13 no.3
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• pp.113-118
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• 2012

Metal oxide semiconductors were considered promising materials as backplanes of future displays. Moreover, the adoption of carrier-suppressing metal into indium-zinc oxide (IZO) has become one of the most important themes in the metal oxide research field. In this paper, efforts to realize and optimize IZO with diverse types of carrier suppressors are summarized. Properties such as the band gap of metal in the oxidized form and its electronegativity were examined to confirm their relationship with the metal's carrier-suppressing ability. It was concluded that those two properties could be used as indicators of the carrier-suppressing ability of a material. As predicted by the properties, the alkali earth metals and early transition metals used in the research effectively suppressed the carrier and optimized the electrical properties of the metal oxide semiconductors. With the carrier-suppressing metals, IZO-based thin-film transistors with high (above $1cm^2/V{\cdot}s$) mobility, a lower than 0.6V/dec sub-threshold gate swing, and an over $3{\times}10^6$ on-to-off current ratio could be achieved.