• Korean Journal of Materials Research
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• v.29 no.5
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• pp.328-335
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• 2019

Nb-doped $TiO_2$(NTO) coated NiCrAl alloy foam for hydrogen production is prepared using ultrasonic spray pyrolysis deposition(USPD) method. To optimize the size and distribution of NTO particles based on good physical and chemical stability, we synthesize particles by adjusting the weight ratio of the Nb precursor solution(5 wt%, 10 wt% and 15 wt%). The morphological, chemical bonding, and structural properties of the NTO coated NiCrAl alloy foam are investigated by X-ray diffraction(XRD), X-ray photo-electron spectroscopy(XPS), and Field-Emission Scanning Electron Microscopy(FESEM). As a result, the samples of controlled Nb weight ratio exhibit a common diffraction pattern at ${\sim}25.3^{\circ}$, corresponding to the(101) plane, and have chemical bonding(O-Nb=O) at 534 eV. The NTO particles with the optimum weight ratio of N (10 wt%) show a uniform distribution with a size of ~18.2-21.0 nm. In addition, they exhibit the highest corrosion resistance even in the electrochemical stability estimation. As a result, the introduction of NTO coated NiCrAl alloy foam by USPD improves the chemical stability of the NiCrAl alloy foam by protecting the direct electrochemical reaction between the foam and the electrolyte. Thus, the optimized NTO coating can be proposed for excellent protection of NiCrAl alloy foam for hydrocarbon-based steam methane reforming(SMR).

• Journal of Powder Materials
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• v.24 no.1
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• pp.1-5
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• 2017

We have investigated the washing method of as-synthesized CdSe/ZnS core/shell structure quantum dots (QDs) and the effective surface passivation method of the washed QDs using PMMA. The quantum yield (QY%) of as-synthesized QDs decreases with time, from 79.3% to 21.1%, owing to surface reaction with residual organics. The decreased QY% is restored to the QY% of as-synthesized QDs by washing. However, the QY% of washed QDs also decreases with time, owing to the absence of surface passivation layer. On the other hand, the PMMA-treated QDs maintained a relatively higher QY% after washing than that of the washed QDs that were kept in toluene solution for 30 days. Formation of the PMMA coating layer on CdSe/ZnS QD surface is confirmed by HR-TEM and FT-IR. It is found that the PMMA surface coating, when combined with washing, is useful to be applied in the storage of QDs, owing to its long-term stability.

• Journal of the Korean Chemical Society
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• v.62 no.2
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• pp.118-123
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• 2018

The hexagonal tungsten bronze $Cs_xWO_3$ nanoparticle was synthesized by a chemical coprecipitation method of ammonium tungstate and $Cs_2CO_3$ in acidic condition. This synthetic method for cesium tungsten bronze is reported for the first time as far as we know. The synthesized $Cs_xWO_3$ as precipitated showed a weak crystallinity of hexagonal unit cell with a crystallite size of about 4 nm without annealing. When the synthesized $Cs_xWO_3$ was annealed in $N_2$ atmosphere, the crystallinity and crystallite size systematically increased maintaining the typical hexagonal tungsten bronze structure as the annealing temperature increased. The analyzed Cs content in the bronze was about 0.3 vs W, which is very close to the theoretical maximum value, 1/3 in cesium tungsten bronze. According to XPS analysis, the reduced tungsten ions existed as both the forms of $W^{5+}$ and $W^{4+}$ and the contents systematically increased as the annealing temperature increased up to $800^{\circ}C$. The $Cs_xWO_3$ thin films on PET substrate were also prepared by a wet-coating method using the ball-milled solution of the annealed $Cs_xWO_3$ nanoparticles at various temperatures. The near-infrared shielding property of these thin films increased systematically as the annealing temperature increased up to $800^{\circ}C$ as expected with the increased contents of reduced tungsten ions.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.190-190
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• 2010

Zinc oxide is the most attractive material due to the large direct band gap (3.37 eV), excellent chemical and thermal stability, and large exciton binding energy (60 meV). Recently, ZnO nanorods were used as the high efficient antireflection coating layer of solar cells based on silicon (Si). In this reports, we studied the effects of rapid thermal annealing (RTA) treatment on optical properties of ZnO nanorods. For fabrication of ZnO nanorods, there are many methods such as hydrothermal method, sol-gel method, and metal organic chemical vapor deposition method. Among of them, we used the conventional wet chemical method which is simple and low temperature growth. In order to synthesize the ZnO nanorods, the ZnO films were deposited on Si substrate by RF magnetron sputtering at room temperature and the samples were dipped to aqua solution containing the zinc nitrate and hexamethylentetramines (HMT). The synthesis process was achieved in keeping with temperature of $90-95^{\circ}C$ and under constant stirring. The morphology of ZnO nanorods on glass and Si was characterized by scanning electron microscopy. For the analysis of antireflection performance, the reflectance and transmittance were measured by spectrophotometer. And for analyzing the effects of RTA treatment on ZnO nanorods, crystalline properties were investigated by X-ray diffraction measurements and optical properties was estimated by photoluminescence spectra.

• Journal of Industrial Convergence
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• v.20 no.10
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• pp.33-38
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• 2022

In this paper, a simple method of forming a solution-based carbon nanotube (CNT) for use as a conductive material for electronic devices was studied. The CNT thin film coating was performed on the glass by applying the spin coating method and the argon atmospheric pressure plasma process. In order to observe changes in electrical and physical properties according to the number of coatings, samples formed in the same manner from times 1 to 5 were prepared, and surface shape, reflectance, transmittance, absorbance, and sheet resistance were measured for each sample. As the number of coatings increased, the transmittance decreased, and the reflectance and absorptivity increased in the entire measurement wavelength range. Also, as the wavelength decreases, the transmittance decreases, and the reflectance and absorption increase. In the case of electrical properties, it was confirmed that the conductivity was significantly improved when the second coating was applied. In conclusion, in order to replace CNT with a transparent electrode, it is necessary to consider the number of coatings in consideration of reflectivity and electrical conductivity together, and it can be seen that 2 times is optimal.

• Journal of the Korean Ceramic Society
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• v.44 no.6 s.301
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• pp.325-330
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• 2007

High porous AlO(OH) gel is used in precursor of ceramic material, coating material and porous catalyst. For use of these, not only physiochemical control for particle morphology, pore characteristic and peptization but also studies of synthetic method for preparation of high porous AlO(OH) gel were required. In this study, high porous AlO(OH) gel was prepared through the aging and filtration process of aluminum hydroxides gel precipitated by the hydrolysis reaction of $Na_2CO_3$ solution and $Al_2(SO_4)_3$ and $Na_2SO_4$ mixed solution. In this process, optimum synthetic condition of AlO(OH) gel having excellent pore volume as studying the effect of hydrolysis pH on gel precipitates has been studied. Hydrolysis pH brought about numerous changes on crystal morphology, surface area, pore volume and pore size. Physiochemical properties of gel were investigated as using XRD, TEM, TG/DTA, FT-IR and $N_2$ BET method.

• Membrane Journal
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• v.32 no.3
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• pp.198-208
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• 2022

Membrane can selectively separate various substances such as organic substances, liquids, solutes, vapors, gases, ions or electrons according to the separation technology and various uses. Membranes are largely divided into symmetric membranes and asymmetric membranes, and classified into porous and nonporous structure depending on the presence or absence of pores. Also, the interface of the membrane may be molecularly uniform, or chemically or physically non-uniform. Preparation techniques include melt extrusion, stretching, template leaching, track-etching, solution casting, phase inversion, and solution coating method. The prepared membrane can be applied to various applications such as microfiltration, ultrafiltration, nanofiltration, reverse osmosis, gas separation and energy fields. This review provides a tutorial on how to prepare membranes according to the classification and types.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.588-593
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• 2023

The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a low-cost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (I_on/I_off) showed 0.15 cm²/V·s, -5.6 V, and 7.5×10⁴, respectively.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.74-79
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• 2022

In this study, the plasma corrosion resistance and the change in the number of contamination particles generated using the plasma etching process and cleaning process of coating parts for semiconductor plasma etching equipment were investigated. As the coating method, atmospheric plasma spray (APS) was used, and the powder materials were Y₂O₃ and Y₃Al₅O₁₂ (YAG). There was a clear difference in the densities of the coatings due to the difference in solubility due to the melting point of the powdered material. As a plasma environment, a mixed gas of CF₄, O₂, and Ar was used, and the etching process was performed at 200 W for 60 min. After the plasma etching process, a fluorinated film was formed on the surface, and it was confirmed that the plasma resistance was lowered and contaminant particles were generated. We performed a surface cleaning process using piranha solution(H₂SO₄(3):H₂O₂(1)) to remove the defect-causing surface fluorinated film. APS-Y₂O₃ and APS-YAG coatings commonly increased the number of defects (pores, cracks) on the coating surface by plasma etching and cleaning processes. As a result, it was confirmed that the generation of contamination particles increased and the breakdown voltage decreased. In particular, in the case of APS-YAG under the same cleaning process conditions, some of the fluorinated film remained and surface defects increased, which accelerated the increase in the number of contamination particles after cleaning. These results suggest that contaminating particles and the breakdown voltage that causes defects in semiconductor devices can be controlled through the optimization of the APS coating process and cleaning process.

• Applied Chemistry for Engineering
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• v.7 no.6
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• pp.1078-1086
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• 1996

The peroxo-polytungstic acid was formed by the direct reaction of tungsten powder with the hydrogen peroxide solution. Peroxo-polytungstic powder were prepared by rotary evaporator using the fabricated on to ITO coated glass as substrate by dip-coating method using $2g/10mL(W-IPA/H_2O)$ sol solution. A substrate was dipped into the sol solution and after a meniscus had settled, the substrate was withdrawn at a constant rate of the 3mm/sec. Thicker layer could be built up by repeated dipping/post-treatment 15 times cycles. The layers dried at the temperature of $65{\sim}70^{\circ}C$ during the withdrawn process, and then tungsten oxides thin film was formed by final heating treatment at the temperature of $230{\sim}240^{\circ}C$ for 30min. A linear rotation between the thickness of thin film and the number of dipping/post-treatment cycles for tungsten oxides thin films made by dip-coating was found. The thickness of thin film had $60{\AA}$ after one dipping. From the patterns of XRD, the structure of tungsten oxides thin film identified as amorphous one and from the photographs of SEM, the defects and the moderate cracks were observed on the tungsten oxides thin film, but the homogeneous surface of thin films were mostly appeared. The electrochemical characteristic of the $ITO/WO_3$ thin film electrode were confirmed by the cyclic voltammetry and the cathodic Tafel polaization method. The coloring bleaching processes were clearly repeated up to several hundreds cycles by multiple cyclic voltammetry, but the dissolved phenomenon of thin film revealed in $H_2SO_4$ solution was observed due to the decrease of the current densities. The diffusion coefficient was calculated from irreversible Randles-Sevick equation from the data obtained by the cyclic voltammetry with various scan rates.