• Ceramist
• /
• v.23 no.2
• /
• pp.184-199
• /
• 2020

The solid oxide fuel cells (SOFCs) are the one of the most promising energy conversion devices which can directly convert chemical energy into electric power with high efficiency and low emission. The lowering operating temperature below 800 ℃ has been considered as the mostly considerable research and development for commercialization. The major issue is to maintain reasonably high performance of SOFCs at reduced temperatures due to increment of polarization resistance of electrodes and electrolyte. Thus, the alternative materials with high catalytic activities and fast oxygen ion conductivity are required. For recent advances in electrolyte materials and technology, newly designed, highly conductive electrolyte materials and structural engineering of them provide a new path for further reduction in ohmic polarization resistance from electrolytes. Here, a powerful strategy of the bilayer concept with various oxide electrolytes of SOFCs are briefly reviewed. These recent developments also highlight the need for electrolytes with greater conductivity to achieve a high performance, thus providing a useful guidance for the rational design of cell structures for SOFCs. Moreover, cell design, materials compatibility, processing methods, are discussed, along with their role in determining cell performance. Results from state-of-the-art SOFCs are presented, and future prospects are discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.05b
• /
• pp.261-264
• /
• 2000

The purpose of this study is to research and develop solid polymer electrolyte(SPE) for Li polymer battery. This paper describes temperature dependence of conductivity, impedance spectroscopy, electrochemical properties of PAN/PVDF electrolytes as a function of a mixed ratio. PAN/PVDF based polymer electrolyte films were prepared by thermal gellification method of preweighed PAN/PVDF, plasticizer and Li salt. By adding PVDF and as a function of plasticizer mixed ratio to PAN-LiClO4 electrolyte, its conductivity was higher than that of PAN-$LiClO4_4$ electrolyte. The conductivity of PAN/PVDF electrolytes was $10^{-3}S/cm$. $10PAN10PVDFLiClO_4PC_5EC_5$ electrolyte shows the better conductivity of the others. Steady state current method and ac impedance used for the determination of transference numbers in PAN/PVDF electrolyte film. The transference number of $10PAN10PVDFLiClO_4PC_5EC_5$ electrolyte is 0.45.

• Proceedings of the Korean Ceranic Society Conference
• /
• 2004.04b
• /
• pp.49.1-49.1
• /
• 2004

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1998.08a
• /
• pp.151.1-151
• /
• 1998

• 한국전기화학회:학술대회논문집
• /
• 2005.07a
• /
• pp.141-144
• /
• 2005

• Journal of Energy Engineering
• /
• v.3 no.1
• /
• pp.10-17
• /
• 1994

• Bulletin of the Korean Chemical Society
• /
• v.21 no.2
• /
• pp.241-244
• /
• 2000

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.343-344
• /
• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.326-326
• /
• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Polymer(Korea)
• /
• v.34 no.4
• /
• pp.357-362
• /
• 2010

Poly(ethyleneglycol diacrylate)(PEGDA) or 2-ethylhexyl acrylate(2EHA)-based gel polymer electrolytes(GPEs) which have a solid content in the range of 8～54 wt% were synthesized and their ionic conductivity and electrochemical properties were measured at room temperature. It was observed that the ionic conductivity over $1\times10^{-3}$ S/cm was obtained in a homogeneous PEGDA-based GPE with 21 wt% of solid content. However the electrochemical stability of the GPE was lower than that of a liquid electrolyte. The presence of AIBN initiator which can produce a N2 gas during polymerization process might be the reason of this low oxidation decomposition potential. As an alternative, benzoyl peroxide was used as an initiator and GPE with enhanced electrochemical stability was obtained. Finally, the formation of stable solid electrolyte interphase on a graphite anode was evidenced by cyclic voltammetry measurement.